KR100729021B1 - 고성능 유기 반도체 소자의 제조 방법 - Google Patents

고성능 유기 반도체 소자의 제조 방법 Download PDF

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KR100729021B1
KR100729021B1 KR1020037015980A KR20037015980A KR100729021B1 KR 100729021 B1 KR100729021 B1 KR 100729021B1 KR 1020037015980 A KR1020037015980 A KR 1020037015980A KR 20037015980 A KR20037015980 A KR 20037015980A KR 100729021 B1 KR100729021 B1 KR 100729021B1
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organic
semiconductor device
organic semiconductor
substrate
metal
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KR20050026844A (ko
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양 양
리핑 마
마이클 엘. 비겔
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프리시젼 다이나믹스 코포레이션
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
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    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
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    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
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    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
KR1020037015980A 2002-08-12 2003-04-10 고성능 유기 반도체 소자의 제조 방법 Expired - Fee Related KR100729021B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/218,141 2002-08-12
US10/218,141 US6784017B2 (en) 2002-08-12 2002-08-12 Method of creating a high performance organic semiconductor device

Publications (2)

Publication Number Publication Date
KR20050026844A KR20050026844A (ko) 2005-03-16
KR100729021B1 true KR100729021B1 (ko) 2007-06-14

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US (2) US6784017B2 (enExample)
EP (1) EP1529312A4 (enExample)
JP (1) JP2005520356A (enExample)
KR (1) KR100729021B1 (enExample)
CN (1) CN100459147C (enExample)
AU (1) AU2003226074A1 (enExample)
BR (1) BR0303025A (enExample)
CA (1) CA2450611A1 (enExample)
IL (1) IL158321A0 (enExample)
MX (1) MXPA04010019A (enExample)
TW (1) TWI244760B (enExample)
WO (1) WO2004015779A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR102306947B1 (ko) * 2020-05-21 2021-09-30 한국과학기술원 쇼트키 접합 기반 광 검출소자 및 이를 이용한 광 검출방법

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