KR100691620B1 - 액정표시장치 - Google Patents

액정표시장치 Download PDF

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Publication number
KR100691620B1
KR100691620B1 KR1019990011675A KR19990011675A KR100691620B1 KR 100691620 B1 KR100691620 B1 KR 100691620B1 KR 1019990011675 A KR1019990011675 A KR 1019990011675A KR 19990011675 A KR19990011675 A KR 19990011675A KR 100691620 B1 KR100691620 B1 KR 100691620B1
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KR
South Korea
Prior art keywords
liquid crystal
gate electrode
crystal display
substrate
signal line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019990011675A
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English (en)
Korean (ko)
Other versions
KR19990082905A (ko
Inventor
모리이쿠코
카이토우타쿠오
아베히로노부
에토마시히로
사토우토시히로
이시다카즈히로
쿠도우하지메
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR19990082905A publication Critical patent/KR19990082905A/ko
Application granted granted Critical
Publication of KR100691620B1 publication Critical patent/KR100691620B1/ko
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1019990011675A 1998-04-07 1999-03-30 액정표시장치 Expired - Fee Related KR100691620B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP98-94268 1998-04-07
JP09426898A JP3980167B2 (ja) 1998-04-07 1998-04-07 Ｔｆｔ電極基板

Publications (2)

Publication Number Publication Date
KR19990082905A KR19990082905A (ko) 1999-11-25
KR100691620B1 true KR100691620B1 (ko) 2007-03-09

Family

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Family Applications (1)

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KR1019990011675A Expired - Fee Related KR100691620B1 (ko) 1998-04-07 1999-03-30 액정표시장치

Country Status (4)

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US (2) US6344885B1 (enExample)
JP (1) JP3980167B2 (enExample)
KR (1) KR100691620B1 (enExample)
TW (1) TW505798B (enExample)

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KR100288772B1 (ko) * 1998-11-12 2001-05-02 윤종용 액정 표시 장치 및 그 제조 방법
US7595771B1 (en) * 1998-12-31 2009-09-29 Texas Instruments Incorporated Electro-optical, tunable, broadband color modulator
EP1020920B1 (en) * 1999-01-11 2010-06-02 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a driver TFT and a pixel TFT on a common substrate
JP4372943B2 (ja) * 1999-02-23 2009-11-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP4403329B2 (ja) * 1999-08-30 2010-01-27 ソニー株式会社 液晶表示装置の製造方法
JP3889533B2 (ja) * 1999-09-22 2007-03-07 シャープ株式会社 液晶表示装置及びその製造方法
JP2001188217A (ja) * 1999-10-20 2001-07-10 Sharp Corp アクティブマトリクス型液晶表示装置およびその駆動方法ならびに製造方法
JP3414343B2 (ja) * 1999-11-26 2003-06-09 日本電気株式会社 イメージセンサ及びその製造方法
JP4599655B2 (ja) * 2000-04-24 2010-12-15 セイコーエプソン株式会社 電気光学装置及びプロジェクタ
JP4896314B2 (ja) * 2000-08-04 2012-03-14 株式会社半導体エネルギー研究所 表示装置
JP3918412B2 (ja) * 2000-08-10 2007-05-23 ソニー株式会社 薄膜半導体装置及び液晶表示装置とこれらの製造方法
US6509616B2 (en) * 2000-09-29 2003-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP4974427B2 (ja) * 2000-09-29 2012-07-11 株式会社半導体エネルギー研究所 半導体装置及び電子装置
TW525216B (en) 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
JP4801262B2 (ja) * 2001-01-30 2011-10-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2002353245A (ja) * 2001-03-23 2002-12-06 Seiko Epson Corp 電気光学基板装置及びその製造方法、電気光学装置、電子機器、並びに基板装置の製造方法
JP4831885B2 (ja) 2001-04-27 2011-12-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3933422B2 (ja) * 2001-08-10 2007-06-20 シャープ株式会社 反射膜および反射膜の製造方法
JP4634673B2 (ja) * 2001-09-26 2011-02-16 シャープ株式会社 液晶表示装置及びその製造方法
JP4798907B2 (ja) * 2001-09-26 2011-10-19 株式会社半導体エネルギー研究所 半導体装置
JP4031291B2 (ja) * 2001-11-14 2008-01-09 東芝松下ディスプレイテクノロジー株式会社 液晶表示装置
EP1343058A1 (en) * 2002-03-08 2003-09-10 Belal Establishments Prayer clock
JP2004096079A (ja) * 2002-07-11 2004-03-25 Sharp Corp 光電変換装置、画像読取装置および光電変換装置の製造方法
JP4631255B2 (ja) * 2003-07-16 2011-02-16 セイコーエプソン株式会社 アクティブマトリクス基板、表示装置、及び電子機器
JP2006178356A (ja) * 2004-12-24 2006-07-06 Nec Electronics Corp 表示装置の駆動回路
JP4350106B2 (ja) * 2005-06-29 2009-10-21 三星モバイルディスプレイ株式會社 平板表示装置及びその駆動方法
JP2007109868A (ja) * 2005-10-13 2007-04-26 Sanyo Electric Co Ltd 薄膜トランジスタ及び有機エレクトロルミネッセンス表示装置
JP4007412B2 (ja) * 2007-01-12 2007-11-14 ソニー株式会社 薄膜半導体装置及び液晶表示装置とこれらの製造方法
JP2009049080A (ja) * 2007-08-15 2009-03-05 Hitachi Displays Ltd 表示装置
WO2010113229A1 (ja) * 2009-04-03 2010-10-07 シャープ株式会社 半導体装置及びその製造方法
US20120033146A1 (en) * 2010-08-03 2012-02-09 Chimei Innolux Corporation Liquid crystal display device and electronic device using the same
US9305939B2 (en) 2012-06-08 2016-04-05 Sharp Kabushiki Kaisha Semiconductor device with oxide layer as transparent electrode
KR101614398B1 (ko) * 2012-08-13 2016-05-02 엘지디스플레이 주식회사 박막 트랜지스터 기판과 그 제조방법 및 그를 이용한 유기 발광장치
JP2014149429A (ja) 2013-02-01 2014-08-21 Japan Display Inc 液晶表示装置および液晶表示装置の製造方法
JP2015206819A (ja) * 2014-04-17 2015-11-19 株式会社ジャパンディスプレイ 表示装置
CN104538456B (zh) * 2014-12-31 2018-07-17 深圳市华星光电技术有限公司 低温多晶硅薄膜晶体管及薄膜晶体管基板
JP2015122538A (ja) * 2015-03-09 2015-07-02 株式会社半導体エネルギー研究所 半導体装置
KR102316458B1 (ko) * 2015-03-24 2021-10-25 삼성디스플레이 주식회사 액정 표시장치
TWI777164B (zh) 2015-03-30 2022-09-11 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
JP2016200645A (ja) * 2015-04-07 2016-12-01 株式会社ジャパンディスプレイ 表示装置
US9935127B2 (en) 2015-07-29 2018-04-03 Wuhan China Star Optoelectronics Technology Co., Ltd. Control circuit of thin film transistor
CN105093738B (zh) * 2015-07-29 2018-09-04 武汉华星光电技术有限公司 一种薄膜晶体管的控制电路
KR102374537B1 (ko) 2015-08-21 2022-03-15 삼성디스플레이 주식회사 표시 장치
JP6776060B2 (ja) * 2016-08-29 2020-10-28 株式会社ジャパンディスプレイ 表示装置
CN106526992A (zh) * 2016-12-30 2017-03-22 深圳市华星光电技术有限公司 一种coa基板及液晶面板
CN106920804B (zh) 2017-04-28 2020-03-24 厦门天马微电子有限公司 一种阵列基板、其驱动方法、显示面板及显示装置
CN108767016B (zh) * 2018-05-21 2021-09-21 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板、显示装置

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EP0782035A1 (en) * 1995-12-29 1997-07-02 Xerox Corporation Method of forming array of light active cells and array
JPH09258266A (ja) * 1996-03-22 1997-10-03 Nec Corp 液晶表示装置
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Also Published As

Publication number Publication date
KR19990082905A (ko) 1999-11-25
TW505798B (en) 2002-10-11
US6255131B1 (en) 2001-07-03
JPH11298002A (ja) 1999-10-29
JP3980167B2 (ja) 2007-09-26
US6344885B1 (en) 2002-02-05

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