TW505798B - A liquid crystal display device - Google Patents

A liquid crystal display device Download PDF

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Publication number
TW505798B
TW505798B TW088103479A TW88103479A TW505798B TW 505798 B TW505798 B TW 505798B TW 088103479 A TW088103479 A TW 088103479A TW 88103479 A TW88103479 A TW 88103479A TW 505798 B TW505798 B TW 505798B
Authority
TW
Taiwan
Prior art keywords
liquid crystal
substrate
crystal display
display device
signal line
Prior art date
Application number
TW088103479A
Other languages
English (en)
Chinese (zh)
Inventor
Ikuko Mori
Takuo Kaito
Hironobu Abe
Masayasu Eto
Toshihiro Sato
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW505798B publication Critical patent/TW505798B/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW088103479A 1998-04-07 1999-03-06 A liquid crystal display device TW505798B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09426898A JP3980167B2 (ja) 1998-04-07 1998-04-07 Ｔｆｔ電極基板

Publications (1)

Publication Number Publication Date
TW505798B true TW505798B (en) 2002-10-11

Family

ID=14105540

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088103479A TW505798B (en) 1998-04-07 1999-03-06 A liquid crystal display device

Country Status (4)

Country Link
US (2) US6344885B1 (enExample)
JP (1) JP3980167B2 (enExample)
KR (1) KR100691620B1 (enExample)
TW (1) TW505798B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104538456A (zh) * 2014-12-31 2015-04-22 深圳市华星光电技术有限公司 低温多晶硅薄膜晶体管及薄膜晶体管基板
WO2017016009A1 (zh) * 2015-07-29 2017-02-02 武汉华星光电技术有限公司 一种薄膜晶体管的控制电路
CN107797350A (zh) * 2016-08-29 2018-03-13 株式会社日本显示器 显示装置
US9935127B2 (en) 2015-07-29 2018-04-03 Wuhan China Star Optoelectronics Technology Co., Ltd. Control circuit of thin film transistor
US11004882B2 (en) 2015-03-30 2021-05-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

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JP4403329B2 (ja) * 1999-08-30 2010-01-27 ソニー株式会社 液晶表示装置の製造方法
JP3889533B2 (ja) * 1999-09-22 2007-03-07 シャープ株式会社 液晶表示装置及びその製造方法
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JP4896314B2 (ja) * 2000-08-04 2012-03-14 株式会社半導体エネルギー研究所 表示装置
JP3918412B2 (ja) * 2000-08-10 2007-05-23 ソニー株式会社 薄膜半導体装置及び液晶表示装置とこれらの製造方法
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JP4634673B2 (ja) * 2001-09-26 2011-02-16 シャープ株式会社 液晶表示装置及びその製造方法
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JP4631255B2 (ja) * 2003-07-16 2011-02-16 セイコーエプソン株式会社 アクティブマトリクス基板、表示装置、及び電子機器
JP2006178356A (ja) * 2004-12-24 2006-07-06 Nec Electronics Corp 表示装置の駆動回路
JP4350106B2 (ja) 2005-06-29 2009-10-21 三星モバイルディスプレイ株式會社 平板表示装置及びその駆動方法
JP2007109868A (ja) * 2005-10-13 2007-04-26 Sanyo Electric Co Ltd 薄膜トランジスタ及び有機エレクトロルミネッセンス表示装置
JP4007412B2 (ja) * 2007-01-12 2007-11-14 ソニー株式会社 薄膜半導体装置及び液晶表示装置とこれらの製造方法
JP2009049080A (ja) * 2007-08-15 2009-03-05 Hitachi Displays Ltd 表示装置
US8420458B2 (en) * 2009-04-03 2013-04-16 Sharp Kabushiki Kaisha Semiconductor device and method of producing same
US20120033146A1 (en) * 2010-08-03 2012-02-09 Chimei Innolux Corporation Liquid crystal display device and electronic device using the same
WO2013183495A1 (ja) * 2012-06-08 2013-12-12 シャープ株式会社 半導体装置およびその製造方法
KR101614398B1 (ko) * 2012-08-13 2016-05-02 엘지디스플레이 주식회사 박막 트랜지스터 기판과 그 제조방법 및 그를 이용한 유기 발광장치
JP2014149429A (ja) 2013-02-01 2014-08-21 Japan Display Inc 液晶表示装置および液晶表示装置の製造方法
JP2015206819A (ja) * 2014-04-17 2015-11-19 株式会社ジャパンディスプレイ 表示装置
JP2015122538A (ja) * 2015-03-09 2015-07-02 株式会社半導体エネルギー研究所 半導体装置
KR102316458B1 (ko) * 2015-03-24 2021-10-25 삼성디스플레이 주식회사 액정 표시장치
JP2016200645A (ja) * 2015-04-07 2016-12-01 株式会社ジャパンディスプレイ 表示装置
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CN106920804B (zh) 2017-04-28 2020-03-24 厦门天马微电子有限公司 一种阵列基板、其驱动方法、显示面板及显示装置
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CN104538456A (zh) * 2014-12-31 2015-04-22 深圳市华星光电技术有限公司 低温多晶硅薄膜晶体管及薄膜晶体管基板
CN104538456B (zh) * 2014-12-31 2018-07-17 深圳市华星光电技术有限公司 低温多晶硅薄膜晶体管及薄膜晶体管基板
US11004882B2 (en) 2015-03-30 2021-05-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI777164B (zh) * 2015-03-30 2022-09-11 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
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WO2017016009A1 (zh) * 2015-07-29 2017-02-02 武汉华星光电技术有限公司 一种薄膜晶体管的控制电路
US9935127B2 (en) 2015-07-29 2018-04-03 Wuhan China Star Optoelectronics Technology Co., Ltd. Control circuit of thin film transistor
CN105093738B (zh) * 2015-07-29 2018-09-04 武汉华星光电技术有限公司 一种薄膜晶体管的控制电路
CN107797350A (zh) * 2016-08-29 2018-03-13 株式会社日本显示器 显示装置

Also Published As

Publication number Publication date
KR100691620B1 (ko) 2007-03-09
JPH11298002A (ja) 1999-10-29
KR19990082905A (ko) 1999-11-25
US6255131B1 (en) 2001-07-03
US6344885B1 (en) 2002-02-05
JP3980167B2 (ja) 2007-09-26

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