KR100653624B1 - 폴리실록산 및 포지티브 포토레지스트 조성물 - Google Patents
폴리실록산 및 포지티브 포토레지스트 조성물 Download PDFInfo
- Publication number
- KR100653624B1 KR100653624B1 KR1020000004602A KR20000004602A KR100653624B1 KR 100653624 B1 KR100653624 B1 KR 100653624B1 KR 1020000004602 A KR1020000004602 A KR 1020000004602A KR 20000004602 A KR20000004602 A KR 20000004602A KR 100653624 B1 KR100653624 B1 KR 100653624B1
- Authority
- KR
- South Korea
- Prior art keywords
- group
- acid
- integer
- compound
- polysiloxane
- Prior art date
Links
- 0 C*c1ccccc1 Chemical compound C*c1ccccc1 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Cc1ccccc1 Chemical compound Cc1ccccc1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- YTZKOQUCBOVLHL-UHFFFAOYSA-N CC(C)(C)c1ccccc1 Chemical compound CC(C)(C)c1ccccc1 YTZKOQUCBOVLHL-UHFFFAOYSA-N 0.000 description 1
- RWGFKTVRMDUZSP-UHFFFAOYSA-N CC(C)c1ccccc1 Chemical compound CC(C)c1ccccc1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
- C08G77/26—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen nitrogen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/10—Esters; Ether-esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/13—Phenols; Phenolates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP99-24236 | 1999-02-01 | ||
JP02423699A JP4557328B2 (ja) | 1999-02-01 | 1999-02-01 | ポジ型フォトレジスト組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000076572A KR20000076572A (ko) | 2000-12-26 |
KR100653624B1 true KR100653624B1 (ko) | 2006-12-05 |
Family
ID=12132632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000004602A KR100653624B1 (ko) | 1999-02-01 | 2000-01-31 | 폴리실록산 및 포지티브 포토레지스트 조성물 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6296985B1 (US07494231-20090224-C00006.png) |
JP (1) | JP4557328B2 (US07494231-20090224-C00006.png) |
KR (1) | KR100653624B1 (US07494231-20090224-C00006.png) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000336267A (ja) * | 1999-05-31 | 2000-12-05 | Jsr Corp | 膜形成用組成物および絶縁膜形成用材料 |
JP4187879B2 (ja) * | 1999-08-06 | 2008-11-26 | 東京応化工業株式会社 | 感放射線レジスト組成物 |
US6346363B2 (en) * | 1999-12-06 | 2002-02-12 | Fuji Photo Film Co., Ltd. | Positive photoresist composition |
US6531260B2 (en) * | 2000-04-07 | 2003-03-11 | Jsr Corporation | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition |
JP4141625B2 (ja) * | 2000-08-09 | 2008-08-27 | 東京応化工業株式会社 | ポジ型レジスト組成物およびそのレジスト層を設けた基材 |
JP4295937B2 (ja) * | 2000-12-05 | 2009-07-15 | 株式会社Kri | 活性成分及びそれを用いた感光性樹脂組成物 |
DE10137109A1 (de) * | 2001-07-30 | 2003-02-27 | Infineon Technologies Ag | Siliziumhaltiger Resist für die Fotolithografie |
TWI273352B (en) * | 2002-01-24 | 2007-02-11 | Jsr Corp | Radiation sensitive composition for forming an insulating film, insulating film and display device |
JP4262516B2 (ja) | 2003-05-12 | 2009-05-13 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
KR101247545B1 (ko) * | 2004-11-02 | 2013-03-26 | 다우 코닝 코포레이션 | 레지스트 조성물 |
JP4601056B2 (ja) * | 2005-02-21 | 2010-12-22 | 株式会社資生堂 | シロキサンエステル化合物、皮膚外用剤油分又は毛髪化粧料油分及びこれを配合した皮膚外用剤又は毛髪化粧料 |
KR101293937B1 (ko) * | 2006-06-28 | 2013-08-09 | 다우 코닝 코포레이션 | 전자 유인성 관능 그룹을 갖는 염기 첨가제를 함유한 실세스퀴옥산 수지 시스템 |
KR101216060B1 (ko) | 2006-06-28 | 2012-12-28 | 도쿄 오카 고교 가부시키가이샤 | 전자 유인성 관능 그룹을 갖는 염기 첨가제를 함유한 실세스퀴옥산 수지 시스템 |
CN110095941B (zh) * | 2011-12-26 | 2023-02-17 | 东丽株式会社 | 感光性树脂组合物和半导体元件的制造方法 |
KR101354538B1 (ko) * | 2012-04-20 | 2014-01-23 | 주식회사 아이에스엠 | 크산텐 구조를 포함하는 바인더 수지 및 이를 포함하는 유기절연막 조성물 |
US9618848B2 (en) * | 2014-02-24 | 2017-04-11 | Tokyo Electron Limited | Methods and techniques to use with photosensitized chemically amplified resist chemicals and processes |
CN106687506A (zh) * | 2014-07-03 | 2017-05-17 | 莫门蒂夫性能材料股份有限公司 | 酯官能的聚硅氧烷和由其制成的共聚物 |
WO2016208300A1 (ja) | 2015-06-24 | 2016-12-29 | 富士フイルム株式会社 | パターン形成方法、積層体、及び、有機溶剤現像用レジスト組成物 |
US10048594B2 (en) | 2016-02-19 | 2018-08-14 | Tokyo Electron Limited | Photo-sensitized chemically amplified resist (PS-CAR) model calibration |
US10429745B2 (en) | 2016-02-19 | 2019-10-01 | Osaka University | Photo-sensitized chemically amplified resist (PS-CAR) simulation |
KR102177192B1 (ko) | 2016-05-13 | 2020-11-10 | 도쿄엘렉트론가부시키가이샤 | 광 작용제의 사용에 의한 임계 치수 제어 |
CN109313394B (zh) | 2016-05-13 | 2021-07-02 | 东京毅力科创株式会社 | 使用光敏化学品或光敏化学放大抗蚀剂的临界尺寸控制 |
WO2021034567A1 (en) | 2019-08-16 | 2021-02-25 | Tokyo Electron Limited | Method and process for stochastic driven defectivity healing |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5798501A (en) * | 1980-12-11 | 1982-06-18 | Fujisawa Pharmaceut Co Ltd | Polymer, manufacturing thereof and product therefrom |
JPS63261255A (ja) * | 1987-04-20 | 1988-10-27 | Hitachi Ltd | 感光性樹脂組成物 |
JP2646241B2 (ja) * | 1988-07-20 | 1997-08-27 | 富士写真フイルム株式会社 | フォトレジスト組成物 |
JPH0413725A (ja) * | 1990-05-01 | 1992-01-17 | Kanegafuchi Chem Ind Co Ltd | 感光性ポリシロキサンおよびその製造法 |
JP2646289B2 (ja) * | 1990-06-01 | 1997-08-27 | 富士写真フイルム株式会社 | レジスト組成物 |
JPH04107562A (ja) * | 1990-08-29 | 1992-04-09 | Fujitsu Ltd | 有機ケイ素重合体およびレジスト組成物 |
IT1251572B (it) * | 1991-09-11 | 1995-05-17 | Enichem Sintesi | Stabilizzanti polisilossanici contenenti gruppi fenolici stericamente impediti e gruppi reattivi |
IT1254931B (it) * | 1992-04-27 | 1995-10-11 | Enichem Sintesi | Stabilizzanti polisilossanici contenenti gruppi fenolici stericamente impediti e gruppi ossammidici. |
US5338818A (en) * | 1992-09-10 | 1994-08-16 | International Business Machines Corporation | Silicon containing positive resist for DUV lithography |
JP2657740B2 (ja) * | 1992-10-08 | 1997-09-24 | 日本電信電話株式会社 | ポジ型レジスト材料 |
TW397936B (en) | 1994-12-09 | 2000-07-11 | Shinetsu Chemical Co | Positive resist comosition based on a silicone polymer containing a photo acid generator |
JP3324360B2 (ja) * | 1995-09-25 | 2002-09-17 | 信越化学工業株式会社 | ポリシロキサン化合物及びポジ型レジスト材料 |
KR0179115B1 (ko) * | 1995-11-20 | 1999-05-01 | 구자홍 | 액정배향용 감광성물질 및 이를 이용한 액정표시장치 |
JP3518158B2 (ja) * | 1996-04-02 | 2004-04-12 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
JPH10204179A (ja) * | 1997-01-21 | 1998-08-04 | Toray Dow Corning Silicone Co Ltd | ポリオルガノシロキサンおよびその製造方法 |
JP3666550B2 (ja) * | 1997-03-10 | 2005-06-29 | 信越化学工業株式会社 | 新規高分子シリコーン化合物、化学増幅ポジ型レジスト材料及びパターン形成方法 |
JP3533951B2 (ja) * | 1997-08-06 | 2004-06-07 | 信越化学工業株式会社 | 高分子シリコーン化合物、レジスト材料及びパターン形成方法 |
US6087064A (en) * | 1998-09-03 | 2000-07-11 | International Business Machines Corporation | Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method |
JP2000235264A (ja) * | 1998-12-14 | 2000-08-29 | Fuji Photo Film Co Ltd | ポジ型シリコーン含有感光性組成物 |
JP4361164B2 (ja) * | 1999-04-28 | 2009-11-11 | 新日鐵化学株式会社 | ケイ素含有感光性樹脂及びこれを含有する組成物 |
-
1999
- 1999-02-01 JP JP02423699A patent/JP4557328B2/ja not_active Expired - Fee Related
-
2000
- 2000-01-31 KR KR1020000004602A patent/KR100653624B1/ko not_active IP Right Cessation
- 2000-02-01 US US09/496,259 patent/US6296985B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2000219743A (ja) | 2000-08-08 |
JP4557328B2 (ja) | 2010-10-06 |
KR20000076572A (ko) | 2000-12-26 |
US6296985B1 (en) | 2001-10-02 |
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