KR100651148B1 - 반절연성 탄화규소 기판 상의 질화물 기반 트랜지스터 - Google Patents
반절연성 탄화규소 기판 상의 질화물 기반 트랜지스터 Download PDFInfo
- Publication number
- KR100651148B1 KR100651148B1 KR1020007014069A KR20007014069A KR100651148B1 KR 100651148 B1 KR100651148 B1 KR 100651148B1 KR 1020007014069 A KR1020007014069 A KR 1020007014069A KR 20007014069 A KR20007014069 A KR 20007014069A KR 100651148 B1 KR100651148 B1 KR 100651148B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- gallium nitride
- aluminum
- algan
- nitride layer
- Prior art date
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 title claims abstract description 25
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 23
- 150000004767 nitrides Chemical class 0.000 title claims description 14
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 54
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 22
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000002161 passivation Methods 0.000 claims abstract description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910021339 platinum silicide Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 3
- -1 titanium-aluminum-nickel Chemical compound 0.000 claims description 3
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- BTOSBOYSGWNSHM-UHFFFAOYSA-N [Si].[Ni].[Ti] Chemical compound [Si].[Ni].[Ti] BTOSBOYSGWNSHM-UHFFFAOYSA-N 0.000 claims 2
- 230000005611 electricity Effects 0.000 claims 1
- 229910002704 AlGaN Inorganic materials 0.000 description 28
- 150000001875 compounds Chemical class 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 108091006149 Electron carriers Proteins 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000012669 compression test Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
도 3은 2개의 상이한 변수, 즉 1 내지 100 ㎓의 주파수에 대한 단락 회로 전류 이득의 절대값(|h21|) 및 최대 이용 가능한 이득(데시벨 단위의 MAG)의 플로트도이다. 도 3의 주파수 눈금은 로그(log)이다. 트랜지스터 치수가 도 3에 나열되어 있고, 도 3에는 본 발명에 따른 0.125 ㎜의 HEMT의 특성이 도시되어 있다. 도 3에 도시한 바와 같이, 동작의 단위 이득 주파수(fT)는 h12의 절대값이 0 ㏈인 지점에서 정해진다. -6 ㏈/옥타브의 선에 의한 외삽(extrapolation)을 이용함으로써, fT는 보수적인 평가에서 약 28 ㎓가 된다.
도 2는 LG= 0.45, LGS= 1.0 및 LGD= 1.5 ㎛인 1㎜ 폭의 HEMT의 대표적인 출력 특성을 도시한다. VGS= +2V에서 달성되는 피크 전류는 680 ㎃/㎜이고, 200 mS/mm의 VGS=-0.5 V 부근에서의 최대 외인성 상호컨덕턴스는 이러한 소자의 전류 취급 용량이 우수하다는 것을 보여준다. 상기 소자의 동작은 125 ㎛ 내지 2 ㎜의 범위의 모든 게이트 폭에 대하여 충분하게 평가되었다. 도 3은 VDS= 20 V 및 Vgs= -1 V에서 0.35 ㎛ 소자의 소신호 이득 측정(small signal gain measurements)(Δ=|h21| 및 0= MAG)을 나타낸다. 외삽된 단위 이득 주파수(fT)는 28 ㎓였다. 최대 이용 가능한 이득(Maximum A Vailabe Gain; MAG)은 네트워크 분석기의 최대 주파수까지 높게 유지되었다. 35 ㎓ 이하의 데이터로부터 추출한 소신호 파라미터는 전력 이득(도 3의 점선)을 모델링하는데 사용되고, fMAX의 측정값은 114 ㎓이다. 최대 이용 가능한 이득(MAG)은 10 ㎓에서 13.8dB이었다.
Claims (19)
- 반절연성 기판(11);상기 기판 상의 질화알루미늄 버퍼층(12);상기 버퍼층 상의 절연성 질화갈륨층(13)을 포함하는 고전자이동도 트랜지스터(HEMT)로서,상기 질화갈륨(13)층 상의 질화알루미늄갈륨의 활성 구조(14);상기 질화알루미늄갈륨 활성 구조(14)에 접촉하는 각각의 소스, 드레인 및 게이트 접촉부(20, 21, 22); 및질화규소 및 이산화규소로 이루어지는 군에서 선택된 물질로 구성되어 상기 질화알루미늄갈륨 활성 구조(14) 상에 위치되고, 상기 소스, 드레인 및 게이트 접촉부의 접촉 부위를 덮고, 상기 소스, 드레인 및 게이트 접촉부에의 전기 접속을 허용하는 윈도우를 갖는 패시베이션층(23)을 포함하는 것을 특징으로 하는 고전자이동도 트랜지스터.
- 제1항에 있어서,상기 질화알루미늄갈륨 활성 구조(14)가,상기 절연성 질화갈륨층(13) 상의 비도핑 상태의 제1 질화알루미늄갈륨층(15);상기 비도핑 상태의 제1 질화알루미늄층(15) 상의 도전 가능하게 도핑된 상태의 질화알루미늄갈륨층(16); 및상기 도전 가능하게 도핑된 상태의 질화알루미늄갈륨층(16) 상의 비도핑 상태의 제2 질화알루미늄갈륨층(17)을 포함하는 것을 특징으로 하는 고전자이동도 트랜지스터.
- 제2항에 있어서,상기 패시베이션층(23)이 상기 비도핑 상태의 제2 질화알루미늄층(17) 상에 있고;상기 도전 가능하게 도핑된 상태의 질화알루미늄갈륨층(16)이 비도핑 상태의 질화알루미늄갈륨층으로 대체되는 것을 특징으로 하는 고전자이동도 트랜지스터.
- 제1항에 있어서,상기 기판이 4H 폴리타입 탄화규소를 포함하고, 105 Ω㎝ 이상의 벌크 저항률(bulk resistivity)을 갖는 것을 특징으로 하는 고전자이동도 트랜지스터.
- 제1항에 있어서,상기 소스 및 드레인 접촉부가, 티타늄-알루미늄-니켈의 합금과, 티타늄-실리콘-니켈의 합금으로 이루어진 군에서 선택된 물질로 구성되며;상기 게이트 접촉부가, 티타늄, 플라티늄, 크롬, 티타늄-텅스텐의 합금 및 규화플라티늄(platinum silicide)으로 이루어진 군에서 선택된 물질로 구성되는 것을 특징으로 하는 고전자이동도 트랜지스터.
- 반절연성 기판(11)을 포함하는 고전자이동도 트랜지스터(HEMT)에 있어서,서로 인접한 질화갈륨층(GaN)(13)과 질화알루미늄갈륨층(AlGaN)(14)을 포함하는 2개의 상이한 3족 질화물 반도체 재료의 헤테로 접합 구조;상기 헤테로 접합 구조에 접촉하여 상기 트랜지스터의 소스부, 게이트부 및 드레인부를 형성하는 저항성 접촉부(20, 22, 21); 및질화규소 및 이산화규소로 이루어진 군에서 선택된 물질로 형성되고, 상기 헤테로 접합 구조의 상표면을 덮으며, 상기 저항성 접촉부의 적어도 일부분을 덮는 패시베이션층(23)을 포함하는 것을 특징으로 하는 고전자이동도 트랜지스터.
- 제6항에 있어서,상기 기판과 상기 헤테로 접합 구조 사이에 질화알루미늄 버퍼층(12)을 더 포함하는 것을 특징으로 하는 고전자이동도 트랜지스터.
- 제7항에 있어서,상기 질화갈륨층(13)이 비도핑 상태이며;상기 AlGaN층(14)이 상기 질화갈륨층(13) 상의 비도핑 상태의 제1 AlGaN층(15); 상기 비도핑 상태의 제1 AlGaN층(15) 상의 도우너-도핑된 AlGaN층(16); 및 상기 도우너-도핑된 AlGaN층(16) 상의 비도핑 상태의 제2 AlGaN층(17)으로 형성되는 것을 특징으로 하는 고전자이동도 트랜지스터.
- 제8항에 있어서,상기 3개의 AlGaN층 모두가 동일한 Al 및 Ga 몰분율을 갖는 것을 특징으로 하는 고전자이동도 트랜지스터.
- 제8항에 있어서,상기 3개의 AlGaN층 중 적어도 두 개가 상이한 Al 및 Ga 몰분율을 갖는 것을 특징으로 하는 고전자이동도 트랜지스터.
- 제7항에 있어서,상기 질화알루미늄 버퍼층(12)이 상기 기판(11) 상에 있고, 상기 질화갈륨층(13)이 상기 질화알루미늄 버퍼층(12) 상에 있는 것을 특징으로 하는 고전자이동도 트랜지스터.
- 제6항에 있어서,상기 저항성 접촉부가 티타늄-알루미늄-니켈의 합금을 포함하며, 상기 정류 게이트 접촉부가 티타늄, 플라티늄, 크롬, 티타늄-텅스텐의 합금, 및 규화 플라티늄으로 이루어진 군에서 선택되는 물질을 포함하며;상기 소스부 및 드레인부가 티타늄-실리콘-니켈의 합금을 포함하는 것을 특징으로 하는 고전자이동도 트랜지스터.
- 제6항에 있어서,상기 반절연성 기판이 탄화규소를 포함하는 것을 특징으로 하는 고전자이동도 트랜지스터.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/096,967 US6316793B1 (en) | 1998-06-12 | 1998-06-12 | Nitride based transistors on semi-insulating silicon carbide substrates |
US09/096,967 | 1998-06-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010052773A KR20010052773A (ko) | 2001-06-25 |
KR100651148B1 true KR100651148B1 (ko) | 2006-11-28 |
Family
ID=22259999
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020007014069A KR100651148B1 (ko) | 1998-06-12 | 1999-06-02 | 반절연성 탄화규소 기판 상의 질화물 기반 트랜지스터 |
Country Status (9)
Country | Link |
---|---|
US (3) | US6316793B1 (ko) |
EP (1) | EP1086496A2 (ko) |
JP (1) | JP2002520880A (ko) |
KR (1) | KR100651148B1 (ko) |
CN (1) | CN100356578C (ko) |
AU (1) | AU1196000A (ko) |
CA (1) | CA2334823C (ko) |
TW (1) | TW417251B (ko) |
WO (1) | WO2000004587A2 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100815422B1 (ko) * | 2002-02-26 | 2008-03-20 | 주식회사 엘지이아이 | 이종구조 전계효과 트랜지스터 제조방법 |
Families Citing this family (314)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW474024B (en) * | 1999-08-16 | 2002-01-21 | Cornell Res Foundation Inc | Passivation of GaN based FETs |
US6774449B1 (en) * | 1999-09-16 | 2004-08-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
US6639255B2 (en) * | 1999-12-08 | 2003-10-28 | Matsushita Electric Industrial Co., Ltd. | GaN-based HFET having a surface-leakage reducing cap layer |
US6586781B2 (en) * | 2000-02-04 | 2003-07-01 | Cree Lighting Company | Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same |
JP3751791B2 (ja) * | 2000-03-28 | 2006-03-01 | 日本電気株式会社 | ヘテロ接合電界効果トランジスタ |
US7125786B2 (en) | 2000-04-11 | 2006-10-24 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
US7892974B2 (en) * | 2000-04-11 | 2011-02-22 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
US6686616B1 (en) * | 2000-05-10 | 2004-02-03 | Cree, Inc. | Silicon carbide metal-semiconductor field effect transistors |
JP4022708B2 (ja) * | 2000-06-29 | 2007-12-19 | 日本電気株式会社 | 半導体装置 |
US6764888B2 (en) * | 2000-09-27 | 2004-07-20 | Sensor Electronic Technology, Inc. | Method of producing nitride-based heterostructure devices |
US6690042B2 (en) * | 2000-09-27 | 2004-02-10 | Sensor Electronic Technology, Inc. | Metal oxide semiconductor heterostructure field effect transistor |
US6548333B2 (en) * | 2000-12-01 | 2003-04-15 | Cree, Inc. | Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment |
US6649287B2 (en) * | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
US6956250B2 (en) * | 2001-02-23 | 2005-10-18 | Nitronex Corporation | Gallium nitride materials including thermally conductive regions |
US20030201459A1 (en) * | 2001-03-29 | 2003-10-30 | Sheppard Scott Thomas | Nitride based transistors on semi-insulating silicon carbide substrates |
US6849882B2 (en) * | 2001-05-11 | 2005-02-01 | Cree Inc. | Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer |
CN1557024B (zh) | 2001-07-24 | 2010-04-07 | 美商克立股份有限公司 | 绝缘栅铝镓氮化物/氮化钾高电子迁移率晶体管(hemt) |
CA2456662A1 (en) * | 2001-08-07 | 2003-02-20 | Jan Kuzmik | High electron mobility devices |
JP4906023B2 (ja) * | 2001-08-14 | 2012-03-28 | 古河電気工業株式会社 | GaN系半導体装置 |
US6906350B2 (en) * | 2001-10-24 | 2005-06-14 | Cree, Inc. | Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure |
US6897495B2 (en) * | 2001-10-31 | 2005-05-24 | The Furukawa Electric Co., Ltd | Field effect transistor and manufacturing method therefor |
US7030428B2 (en) | 2001-12-03 | 2006-04-18 | Cree, Inc. | Strain balanced nitride heterojunction transistors |
WO2003050849A2 (en) * | 2001-12-06 | 2003-06-19 | Hrl Laboratories, Llc | High power-low noise microwave gan heterojunction field effet transistor |
KR100811492B1 (ko) * | 2002-02-26 | 2008-03-07 | 주식회사 엘지이아이 | GaN계 전자소자 제조방법 |
US7919791B2 (en) * | 2002-03-25 | 2011-04-05 | Cree, Inc. | Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same |
AU2003228736A1 (en) | 2002-04-30 | 2003-11-17 | Advanced Technology Materials, Inc. | High voltage switching devices and process for forming same |
US6982204B2 (en) * | 2002-07-16 | 2006-01-03 | Cree, Inc. | Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses |
US6841001B2 (en) | 2002-07-19 | 2005-01-11 | Cree, Inc. | Strain compensated semiconductor structures and methods of fabricating strain compensated semiconductor structures |
US20050189651A1 (en) * | 2002-07-25 | 2005-09-01 | Matsushita Elec. Ind. Co. Ltd. | Contact formation method and semiconductor device |
US6884704B2 (en) * | 2002-08-05 | 2005-04-26 | Hrl Laboratories, Llc | Ohmic metal contact and channel protection in GaN devices using an encapsulation layer |
US6897137B2 (en) * | 2002-08-05 | 2005-05-24 | Hrl Laboratories, Llc | Process for fabricating ultra-low contact resistances in GaN-based devices |
US7112830B2 (en) * | 2002-11-25 | 2006-09-26 | Apa Enterprises, Inc. | Super lattice modification of overlying transistor |
US6956239B2 (en) * | 2002-11-26 | 2005-10-18 | Cree, Inc. | Transistors having buried p-type layers beneath the source region |
JP4385205B2 (ja) * | 2002-12-16 | 2009-12-16 | 日本電気株式会社 | 電界効果トランジスタ |
JP4077731B2 (ja) * | 2003-01-27 | 2008-04-23 | 富士通株式会社 | 化合物半導体装置およびその製造方法 |
US7898047B2 (en) | 2003-03-03 | 2011-03-01 | Samsung Electronics Co., Ltd. | Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices |
US7112860B2 (en) * | 2003-03-03 | 2006-09-26 | Cree, Inc. | Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices |
RU2222845C1 (ru) * | 2003-04-01 | 2004-01-27 | Закрытое акционерное общество "Научное и технологическое оборудование" | Полевой транзистор |
US6841809B2 (en) * | 2003-04-08 | 2005-01-11 | Sensor Electronic Technology, Inc. | Heterostructure semiconductor device |
JP4469139B2 (ja) * | 2003-04-28 | 2010-05-26 | シャープ株式会社 | 化合物半導体fet |
US7135720B2 (en) * | 2003-08-05 | 2006-11-14 | Nitronex Corporation | Gallium nitride material transistors and methods associated with the same |
US7501669B2 (en) | 2003-09-09 | 2009-03-10 | Cree, Inc. | Wide bandgap transistor devices with field plates |
TWI560783B (en) | 2003-09-09 | 2016-12-01 | Univ California | Fabrication of single or multiple gate field plates |
JP4417677B2 (ja) * | 2003-09-19 | 2010-02-17 | 株式会社東芝 | 電力用半導体装置 |
US7279697B2 (en) | 2003-12-05 | 2007-10-09 | International Rectifier Corporation | Field effect transistor with enhanced insulator structure |
US7649215B2 (en) * | 2003-12-05 | 2010-01-19 | International Rectifier Corporation | III-nitride device passivation and method |
US7071498B2 (en) * | 2003-12-17 | 2006-07-04 | Nitronex Corporation | Gallium nitride material devices including an electrode-defining layer and methods of forming the same |
US20050145851A1 (en) * | 2003-12-17 | 2005-07-07 | Nitronex Corporation | Gallium nitride material structures including isolation regions and methods |
US20050133816A1 (en) * | 2003-12-19 | 2005-06-23 | Zhaoyang Fan | III-nitride quantum-well field effect transistors |
US7901994B2 (en) * | 2004-01-16 | 2011-03-08 | Cree, Inc. | Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers |
US7045404B2 (en) * | 2004-01-16 | 2006-05-16 | Cree, Inc. | Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |
US7033912B2 (en) * | 2004-01-22 | 2006-04-25 | Cree, Inc. | Silicon carbide on diamond substrates and related devices and methods |
JP4449467B2 (ja) * | 2004-01-28 | 2010-04-14 | サンケン電気株式会社 | 半導体装置 |
CN1314081C (zh) * | 2004-02-04 | 2007-05-02 | 中国科学院半导体研究所 | 在硅衬底上生长无裂纹三族氮化物薄膜的方法 |
US7170111B2 (en) * | 2004-02-05 | 2007-01-30 | Cree, Inc. | Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same |
US7612390B2 (en) | 2004-02-05 | 2009-11-03 | Cree, Inc. | Heterojunction transistors including energy barriers |
US7439609B2 (en) * | 2004-03-29 | 2008-10-21 | Cree, Inc. | Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures |
US7514759B1 (en) * | 2004-04-19 | 2009-04-07 | Hrl Laboratories, Llc | Piezoelectric MEMS integration with GaN technology |
US7573078B2 (en) | 2004-05-11 | 2009-08-11 | Cree, Inc. | Wide bandgap transistors with multiple field plates |
US7550783B2 (en) * | 2004-05-11 | 2009-06-23 | Cree, Inc. | Wide bandgap HEMTs with source connected field plates |
US7432142B2 (en) * | 2004-05-20 | 2008-10-07 | Cree, Inc. | Methods of fabricating nitride-based transistors having regrown ohmic contact regions |
US7084441B2 (en) * | 2004-05-20 | 2006-08-01 | Cree, Inc. | Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same |
US7332795B2 (en) * | 2004-05-22 | 2008-02-19 | Cree, Inc. | Dielectric passivation for semiconductor devices |
CN1326208C (zh) * | 2004-06-02 | 2007-07-11 | 中国科学院半导体研究所 | 氮化镓高电子迁移率晶体管的结构及制作方法 |
US7339205B2 (en) | 2004-06-28 | 2008-03-04 | Nitronex Corporation | Gallium nitride materials and methods associated with the same |
US7361946B2 (en) * | 2004-06-28 | 2008-04-22 | Nitronex Corporation | Semiconductor device-based sensors |
US7687827B2 (en) * | 2004-07-07 | 2010-03-30 | Nitronex Corporation | III-nitride materials including low dislocation densities and methods associated with the same |
US7238560B2 (en) * | 2004-07-23 | 2007-07-03 | Cree, Inc. | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
US20060017064A1 (en) | 2004-07-26 | 2006-01-26 | Saxler Adam W | Nitride-based transistors having laterally grown active region and methods of fabricating same |
KR100616619B1 (ko) * | 2004-09-08 | 2006-08-28 | 삼성전기주식회사 | 질화물계 이종접합 전계효과 트랜지스터 |
US7294324B2 (en) * | 2004-09-21 | 2007-11-13 | Cree, Inc. | Low basal plane dislocation bulk grown SiC wafers |
US8441030B2 (en) * | 2004-09-30 | 2013-05-14 | International Rectifier Corporation | III-nitride multi-channel heterojunction interdigitated rectifier |
US20060073621A1 (en) * | 2004-10-01 | 2006-04-06 | Palo Alto Research Center Incorporated | Group III-nitride based HEMT device with insulating GaN/AlGaN buffer layer |
JP2006114652A (ja) * | 2004-10-14 | 2006-04-27 | Hitachi Cable Ltd | 半導体エピタキシャルウェハ及び電界効果トランジスタ |
US20060091606A1 (en) * | 2004-10-28 | 2006-05-04 | Gary Paugh | Magnetic building game |
EP1831919A2 (en) * | 2004-10-28 | 2007-09-12 | Nitronex Corporation | Gallium nitride/silicon based monolithic microwave integrated circuit |
US7348612B2 (en) * | 2004-10-29 | 2008-03-25 | Cree, Inc. | Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same |
US7265399B2 (en) * | 2004-10-29 | 2007-09-04 | Cree, Inc. | Asymetric layout structures for transistors and methods of fabricating the same |
US7456443B2 (en) * | 2004-11-23 | 2008-11-25 | Cree, Inc. | Transistors having buried n-type and p-type regions beneath the source region |
US7709859B2 (en) | 2004-11-23 | 2010-05-04 | Cree, Inc. | Cap layers including aluminum nitride for nitride-based transistors |
US7247889B2 (en) | 2004-12-03 | 2007-07-24 | Nitronex Corporation | III-nitride material structures including silicon substrates |
US7355215B2 (en) * | 2004-12-06 | 2008-04-08 | Cree, Inc. | Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies |
US7161194B2 (en) * | 2004-12-06 | 2007-01-09 | Cree, Inc. | High power density and/or linearity transistors |
US7326962B2 (en) * | 2004-12-15 | 2008-02-05 | Cree, Inc. | Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same |
US7236053B2 (en) | 2004-12-31 | 2007-06-26 | Cree, Inc. | High efficiency switch-mode power amplifier |
US7531849B2 (en) * | 2005-01-25 | 2009-05-12 | Moxtronics, Inc. | High performance FET devices |
WO2006080109A1 (ja) * | 2005-01-25 | 2006-08-03 | Fujitsu Limited | Mis構造を有する半導体装置及びその製造方法 |
US7525248B1 (en) | 2005-01-26 | 2009-04-28 | Ac Led Lighting, L.L.C. | Light emitting diode lamp |
US7465967B2 (en) | 2005-03-15 | 2008-12-16 | Cree, Inc. | Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions |
JP2006286741A (ja) * | 2005-03-31 | 2006-10-19 | Eudyna Devices Inc | 半導体装置およびその製造方法並びにその半導体装置製造用基板 |
US7422634B2 (en) * | 2005-04-07 | 2008-09-09 | Cree, Inc. | Three inch silicon carbide wafer with low warp, bow, and TTV |
US20060226442A1 (en) * | 2005-04-07 | 2006-10-12 | An-Ping Zhang | GaN-based high electron mobility transistor and method for making the same |
US7626217B2 (en) * | 2005-04-11 | 2009-12-01 | Cree, Inc. | Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices |
US8575651B2 (en) | 2005-04-11 | 2013-11-05 | Cree, Inc. | Devices having thick semi-insulating epitaxial gallium nitride layer |
US7615774B2 (en) | 2005-04-29 | 2009-11-10 | Cree.Inc. | Aluminum free group III-nitride based high electron mobility transistors |
US7544963B2 (en) | 2005-04-29 | 2009-06-09 | Cree, Inc. | Binary group III-nitride based high electron mobility transistors |
KR100609117B1 (ko) * | 2005-05-03 | 2006-08-08 | 삼성전기주식회사 | 질화물계 반도체 발광소자 및 그 제조방법 |
US7365374B2 (en) | 2005-05-03 | 2008-04-29 | Nitronex Corporation | Gallium nitride material structures including substrates and methods associated with the same |
US20060267043A1 (en) * | 2005-05-27 | 2006-11-30 | Emerson David T | Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices |
US8272757B1 (en) | 2005-06-03 | 2012-09-25 | Ac Led Lighting, L.L.C. | Light emitting diode lamp capable of high AC/DC voltage operation |
US7405430B2 (en) * | 2005-06-10 | 2008-07-29 | Cree, Inc. | Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates |
US8203185B2 (en) * | 2005-06-21 | 2012-06-19 | Cree, Inc. | Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods |
US9331192B2 (en) | 2005-06-29 | 2016-05-03 | Cree, Inc. | Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same |
US20070018198A1 (en) * | 2005-07-20 | 2007-01-25 | Brandes George R | High electron mobility electronic device structures comprising native substrates and methods for making the same |
US20070018199A1 (en) | 2005-07-20 | 2007-01-25 | Cree, Inc. | Nitride-based transistors and fabrication methods with an etch stop layer |
EP2312635B1 (en) | 2005-09-07 | 2020-04-01 | Cree, Inc. | Transistors with fluorine treatment |
US7399692B2 (en) * | 2005-10-03 | 2008-07-15 | International Rectifier Corporation | III-nitride semiconductor fabrication |
WO2007041710A2 (en) * | 2005-10-04 | 2007-04-12 | Nitronex Corporation | Gallium nitride material transistors and methods for wideband applications |
US7972915B2 (en) * | 2005-11-29 | 2011-07-05 | The Hong Kong University Of Science And Technology | Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HFETs |
US8044432B2 (en) * | 2005-11-29 | 2011-10-25 | The Hong Kong University Of Science And Technology | Low density drain HEMTs |
US7402844B2 (en) * | 2005-11-29 | 2008-07-22 | Cree, Inc. | Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods |
CN101405868A (zh) * | 2005-11-29 | 2009-04-08 | 香港科技大学 | 增强型和耗尽型AlGaN/GaN HFET的单片集成 |
US7932539B2 (en) * | 2005-11-29 | 2011-04-26 | The Hong Kong University Of Science And Technology | Enhancement-mode III-N devices, circuits, and methods |
TWI406413B (zh) * | 2005-11-29 | 2013-08-21 | Univ Hong Kong Science & Techn | 低密度吸極HEMTs |
JP2007157829A (ja) * | 2005-12-01 | 2007-06-21 | Matsushita Electric Ind Co Ltd | 半導体装置 |
US7566913B2 (en) | 2005-12-02 | 2009-07-28 | Nitronex Corporation | Gallium nitride material devices including conductive regions and methods associated with the same |
EP1969635B1 (en) | 2005-12-02 | 2017-07-19 | Infineon Technologies Americas Corp. | Gallium nitride material devices and associated methods |
US7368971B2 (en) * | 2005-12-06 | 2008-05-06 | Cree, Inc. | High power, high frequency switch circuits using strings of power transistors |
US7419892B2 (en) * | 2005-12-13 | 2008-09-02 | Cree, Inc. | Semiconductor devices including implanted regions and protective layers and methods of forming the same |
EP1978550A4 (en) * | 2005-12-28 | 2009-07-22 | Nec Corp | FIELD EFFECT TRANSISTOR AND MULTILAYER EPITAXIAL FILM FOR USE IN THE MANUFACTURE OF A FIELD EFFECT TRANSISTOR |
US7592211B2 (en) * | 2006-01-17 | 2009-09-22 | Cree, Inc. | Methods of fabricating transistors including supported gate electrodes |
US7709269B2 (en) | 2006-01-17 | 2010-05-04 | Cree, Inc. | Methods of fabricating transistors including dielectrically-supported gate electrodes |
US7566918B2 (en) | 2006-02-23 | 2009-07-28 | Cree, Inc. | Nitride based transistors for millimeter wave operation |
US7388236B2 (en) * | 2006-03-29 | 2008-06-17 | Cree, Inc. | High efficiency and/or high power density wide bandgap transistors |
JP2007273640A (ja) * | 2006-03-30 | 2007-10-18 | Sanken Electric Co Ltd | 半導体装置 |
JP5362187B2 (ja) * | 2006-03-30 | 2013-12-11 | 日本碍子株式会社 | 半導体素子 |
US8372697B2 (en) | 2006-05-08 | 2013-02-12 | University Of South Carolina | Digital oxide deposition of SiO2 layers on wafers |
US9040398B2 (en) * | 2006-05-16 | 2015-05-26 | Cree, Inc. | Method of fabricating seminconductor devices including self aligned refractory contacts |
US8980445B2 (en) * | 2006-07-06 | 2015-03-17 | Cree, Inc. | One hundred millimeter SiC crystal grown on off-axis seed |
US7586156B2 (en) * | 2006-07-26 | 2009-09-08 | Fairchild Semiconductor Corporation | Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device |
US7728402B2 (en) | 2006-08-01 | 2010-06-01 | Cree, Inc. | Semiconductor devices including schottky diodes with controlled breakdown |
US8432012B2 (en) | 2006-08-01 | 2013-04-30 | Cree, Inc. | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
US20080035143A1 (en) * | 2006-08-14 | 2008-02-14 | Sievers Robert E | Human-powered dry powder inhaler and dry powder inhaler compositions |
CN101501859B (zh) | 2006-08-17 | 2011-05-25 | 克里公司 | 高功率绝缘栅双极晶体管 |
TW200830550A (en) * | 2006-08-18 | 2008-07-16 | Univ California | High breakdown enhancement mode gallium nitride based high electron mobility transistors with integrated slant field plate |
US7646043B2 (en) * | 2006-09-28 | 2010-01-12 | Cree, Inc. | Transistors having buried p-type layers coupled to the gate |
US8823057B2 (en) | 2006-11-06 | 2014-09-02 | Cree, Inc. | Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices |
EP1921669B1 (en) | 2006-11-13 | 2015-09-02 | Cree, Inc. | GaN based HEMTs with buried field plates |
US7692263B2 (en) | 2006-11-21 | 2010-04-06 | Cree, Inc. | High voltage GaN transistors |
US8878245B2 (en) | 2006-11-30 | 2014-11-04 | Cree, Inc. | Transistors and method for making ohmic contact to transistors |
US8021904B2 (en) | 2007-02-01 | 2011-09-20 | Cree, Inc. | Ohmic contacts to nitrogen polarity GaN |
US7737476B2 (en) * | 2007-02-15 | 2010-06-15 | Cree, Inc. | Metal-semiconductor field effect transistors (MESFETs) having self-aligned structures |
US8835987B2 (en) | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
US8212290B2 (en) | 2007-03-23 | 2012-07-03 | Cree, Inc. | High temperature performance capable gallium nitride transistor |
US8318562B2 (en) | 2007-04-02 | 2012-11-27 | University Of South Carolina | Method to increase breakdown voltage of semiconductor devices |
US8111001B2 (en) | 2007-07-17 | 2012-02-07 | Cree, Inc. | LED with integrated constant current driver |
US8502323B2 (en) * | 2007-08-03 | 2013-08-06 | The Hong Kong University Of Science And Technology | Reliable normally-off III-nitride active device structures, and related methods and systems |
US7745848B1 (en) | 2007-08-15 | 2010-06-29 | Nitronex Corporation | Gallium nitride material devices and thermal designs thereof |
US7875537B2 (en) * | 2007-08-29 | 2011-01-25 | Cree, Inc. | High temperature ion implantation of nitride based HEMTs |
JP4584293B2 (ja) * | 2007-08-31 | 2010-11-17 | 富士通株式会社 | 窒化物半導体装置、ドハティ増幅器、ドレイン電圧制御増幅器 |
US20090072269A1 (en) * | 2007-09-17 | 2009-03-19 | Chang Soo Suh | Gallium nitride diodes and integrated components |
US7915643B2 (en) | 2007-09-17 | 2011-03-29 | Transphorm Inc. | Enhancement mode gallium nitride power devices |
US7851825B2 (en) * | 2007-12-10 | 2010-12-14 | Transphorm Inc. | Insulated gate e-mode transistors |
JP2009176804A (ja) * | 2008-01-22 | 2009-08-06 | Nippon Steel Corp | 電力変換素子 |
US8026581B2 (en) * | 2008-02-05 | 2011-09-27 | International Rectifier Corporation | Gallium nitride material devices including diamond regions and methods associated with the same |
US8076699B2 (en) * | 2008-04-02 | 2011-12-13 | The Hong Kong Univ. Of Science And Technology | Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems |
US8519438B2 (en) | 2008-04-23 | 2013-08-27 | Transphorm Inc. | Enhancement mode III-N HEMTs |
US8343824B2 (en) * | 2008-04-29 | 2013-01-01 | International Rectifier Corporation | Gallium nitride material processing and related device structures |
EP2117039B1 (en) | 2008-05-09 | 2015-03-18 | Cree, Inc. | Semiconductor devices including shallow inplanted regions and methods of forming the same |
US9711633B2 (en) * | 2008-05-09 | 2017-07-18 | Cree, Inc. | Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions |
US7936212B2 (en) | 2008-05-09 | 2011-05-03 | Cree, Inc. | Progressive power generating amplifiers |
US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
US7985986B2 (en) | 2008-07-31 | 2011-07-26 | Cree, Inc. | Normally-off semiconductor devices |
US8384115B2 (en) * | 2008-08-01 | 2013-02-26 | Cree, Inc. | Bond pad design for enhancing light extraction from LED chips |
US7764120B2 (en) * | 2008-08-19 | 2010-07-27 | Cree, Inc. | Integrated circuit with parallel sets of transistor amplifiers having different turn on power levels |
JP5465469B2 (ja) | 2008-09-04 | 2014-04-09 | 日本碍子株式会社 | エピタキシャル基板、半導体デバイス基板、およびhemt素子 |
KR101681483B1 (ko) | 2008-09-12 | 2016-12-02 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
US8289065B2 (en) | 2008-09-23 | 2012-10-16 | Transphorm Inc. | Inductive load power switching circuits |
US20100084687A1 (en) * | 2008-10-03 | 2010-04-08 | The Hong Kong University Of Science And Technology | Aluminum gallium nitride/gallium nitride high electron mobility transistors |
US7898004B2 (en) | 2008-12-10 | 2011-03-01 | Transphorm Inc. | Semiconductor heterostructure diodes |
JP4968747B2 (ja) * | 2009-02-03 | 2012-07-04 | シャープ株式会社 | Iii−v族化合物半導体素子 |
US20100276730A1 (en) * | 2009-04-29 | 2010-11-04 | University Of Seoul Industry Cooperation Foundation | Semiconductor device |
US20100270547A1 (en) * | 2009-04-27 | 2010-10-28 | University Of Seoul Industry Cooperation Foundation | Semiconductor device |
US8253145B2 (en) * | 2009-04-29 | 2012-08-28 | University Of Seoul Industry Cooperation Foundation | Semiconductor device having strong excitonic binding |
US8097999B2 (en) * | 2009-04-27 | 2012-01-17 | University Of Seoul Industry Cooperation Foundation | Piezoelectric actuator |
US20100270592A1 (en) * | 2009-04-27 | 2010-10-28 | University Of Seoul Industry Cooperation Foundation | Semiconductor device |
US20100270591A1 (en) * | 2009-04-27 | 2010-10-28 | University Of Seoul Industry Cooperation Foundation | High-electron mobility transistor |
US8741715B2 (en) * | 2009-04-29 | 2014-06-03 | Cree, Inc. | Gate electrodes for millimeter-wave operation and methods of fabrication |
US8294507B2 (en) | 2009-05-08 | 2012-10-23 | Cree, Inc. | Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits |
US8742459B2 (en) | 2009-05-14 | 2014-06-03 | Transphorm Inc. | High voltage III-nitride semiconductor devices |
JP2010272689A (ja) * | 2009-05-21 | 2010-12-02 | Renesas Electronics Corp | 電界効果トランジスタ |
US8629509B2 (en) | 2009-06-02 | 2014-01-14 | Cree, Inc. | High voltage insulated gate bipolar transistors with minority carrier diverter |
US8193848B2 (en) | 2009-06-02 | 2012-06-05 | Cree, Inc. | Power switching devices having controllable surge current capabilities |
US20100327278A1 (en) * | 2009-06-29 | 2010-12-30 | University Of Seoul Industry Cooperation Foundation | Laminated structures |
US8541787B2 (en) | 2009-07-15 | 2013-09-24 | Cree, Inc. | High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability |
US8105889B2 (en) | 2009-07-27 | 2012-01-31 | Cree, Inc. | Methods of fabricating transistors including self-aligned gate electrodes and source/drain regions |
US8390000B2 (en) | 2009-08-28 | 2013-03-05 | Transphorm Inc. | Semiconductor devices with field plates |
US8354690B2 (en) | 2009-08-31 | 2013-01-15 | Cree, Inc. | Solid-state pinch off thyristor circuits |
US9312343B2 (en) | 2009-10-13 | 2016-04-12 | Cree, Inc. | Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials |
US8216924B2 (en) * | 2009-10-16 | 2012-07-10 | Cree, Inc. | Methods of fabricating transistors using laser annealing of source/drain regions |
US8389977B2 (en) | 2009-12-10 | 2013-03-05 | Transphorm Inc. | Reverse side engineered III-nitride devices |
US8936976B2 (en) * | 2009-12-23 | 2015-01-20 | Intel Corporation | Conductivity improvements for III-V semiconductor devices |
JP4985760B2 (ja) * | 2009-12-28 | 2012-07-25 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
US8563372B2 (en) * | 2010-02-11 | 2013-10-22 | Cree, Inc. | Methods of forming contact structures including alternating metal and silicon layers and related devices |
US9548206B2 (en) | 2010-02-11 | 2017-01-17 | Cree, Inc. | Ohmic contact structure for group III nitride semiconductor device having improved surface morphology and well-defined edge features |
US9214352B2 (en) | 2010-02-11 | 2015-12-15 | Cree, Inc. | Ohmic contact to semiconductor device |
US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
US8415671B2 (en) | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
US8829999B2 (en) | 2010-05-20 | 2014-09-09 | Cree, Inc. | Low noise amplifiers including group III nitride based high electron mobility transistors |
JP5730505B2 (ja) * | 2010-06-23 | 2015-06-10 | 富士通株式会社 | 化合物半導体装置 |
US8847563B2 (en) | 2010-07-15 | 2014-09-30 | Cree, Inc. | Power converter circuits including high electron mobility transistors for switching and rectifcation |
US8357571B2 (en) * | 2010-09-10 | 2013-01-22 | Cree, Inc. | Methods of forming semiconductor contacts |
US8742460B2 (en) | 2010-12-15 | 2014-06-03 | Transphorm Inc. | Transistors with isolation regions |
JP2011097102A (ja) * | 2011-01-31 | 2011-05-12 | Fujitsu Ltd | 化合物半導体装置 |
US8643062B2 (en) | 2011-02-02 | 2014-02-04 | Transphorm Inc. | III-N device structures and methods |
US8716141B2 (en) | 2011-03-04 | 2014-05-06 | Transphorm Inc. | Electrode configurations for semiconductor devices |
US8772842B2 (en) | 2011-03-04 | 2014-07-08 | Transphorm, Inc. | Semiconductor diodes with low reverse bias currents |
US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
US9142662B2 (en) | 2011-05-06 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with low source resistance |
US8710511B2 (en) | 2011-07-29 | 2014-04-29 | Northrop Grumman Systems Corporation | AIN buffer N-polar GaN HEMT profile |
JP5751074B2 (ja) * | 2011-08-01 | 2015-07-22 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
US8901604B2 (en) | 2011-09-06 | 2014-12-02 | Transphorm Inc. | Semiconductor devices with guard rings |
US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
JP2014531752A (ja) | 2011-09-11 | 2014-11-27 | クリー インコーポレイテッドCree Inc. | 改善したレイアウトを有するトランジスタを備える高電流密度電力モジュール |
US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
US9257547B2 (en) | 2011-09-13 | 2016-02-09 | Transphorm Inc. | III-N device structures having a non-insulating substrate |
US8598937B2 (en) | 2011-10-07 | 2013-12-03 | Transphorm Inc. | High power semiconductor electronic components with increased reliability |
JP2013131650A (ja) * | 2011-12-21 | 2013-07-04 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP5883331B2 (ja) * | 2012-01-25 | 2016-03-15 | 住友化学株式会社 | 窒化物半導体エピタキシャルウェハの製造方法及び電界効果型窒化物トランジスタの製造方法 |
US9165766B2 (en) | 2012-02-03 | 2015-10-20 | Transphorm Inc. | Buffer layer structures suited for III-nitride devices with foreign substrates |
WO2013155108A1 (en) | 2012-04-09 | 2013-10-17 | Transphorm Inc. | N-polar iii-nitride transistors |
EP2662884B1 (en) * | 2012-05-09 | 2015-04-01 | Nxp B.V. | Group 13 nitride semiconductor device and method of its manufacture |
US9184275B2 (en) | 2012-06-27 | 2015-11-10 | Transphorm Inc. | Semiconductor devices with integrated hole collectors |
US9099490B2 (en) * | 2012-09-28 | 2015-08-04 | Intel Corporation | Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation |
CN105164811B (zh) | 2013-02-15 | 2018-08-31 | 创世舫电子有限公司 | 半导体器件的电极及其形成方法 |
US8969927B2 (en) | 2013-03-13 | 2015-03-03 | Cree, Inc. | Gate contact for a semiconductor device and methods of fabrication thereof |
US9343561B2 (en) | 2013-03-13 | 2016-05-17 | Cree, Inc. | Semiconductor device with self-aligned ohmic contacts |
US9087718B2 (en) | 2013-03-13 | 2015-07-21 | Transphorm Inc. | Enhancement-mode III-nitride devices |
US9245993B2 (en) | 2013-03-15 | 2016-01-26 | Transphorm Inc. | Carbon doping semiconductor devices |
KR101439281B1 (ko) * | 2013-04-24 | 2014-09-15 | 순천대학교 산학협력단 | 이종접합 전계효과 트랜지스터 및 그 제조방법 |
US9530708B1 (en) | 2013-05-31 | 2016-12-27 | Hrl Laboratories, Llc | Flexible electronic circuit and method for manufacturing same |
US9847411B2 (en) | 2013-06-09 | 2017-12-19 | Cree, Inc. | Recessed field plate transistor structures |
US9679981B2 (en) | 2013-06-09 | 2017-06-13 | Cree, Inc. | Cascode structures for GaN HEMTs |
US9755059B2 (en) | 2013-06-09 | 2017-09-05 | Cree, Inc. | Cascode structures with GaN cap layers |
US9407214B2 (en) | 2013-06-28 | 2016-08-02 | Cree, Inc. | MMIC power amplifier |
WO2015009514A1 (en) | 2013-07-19 | 2015-01-22 | Transphorm Inc. | Iii-nitride transistor including a p-type depleting layer |
US9093394B1 (en) * | 2013-12-16 | 2015-07-28 | Hrl Laboratories, Llc | Method and structure for encapsulation and interconnection of transistors |
JP5773035B2 (ja) * | 2014-06-04 | 2015-09-02 | 富士通株式会社 | 化合物半導体装置 |
US9646839B2 (en) * | 2014-06-11 | 2017-05-09 | Hrl Laboratories, Llc | Ta based ohmic contact |
US9318593B2 (en) | 2014-07-21 | 2016-04-19 | Transphorm Inc. | Forming enhancement mode III-nitride devices |
WO2016051935A1 (ja) | 2014-10-03 | 2016-04-07 | 日本碍子株式会社 | 半導体素子用のエピタキシャル基板およびその製造方法 |
US9536966B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Gate structures for III-N devices |
US9536967B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Recessed ohmic contacts in a III-N device |
JP6604036B2 (ja) * | 2015-06-03 | 2019-11-13 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
US9704705B2 (en) | 2015-09-08 | 2017-07-11 | Macom Technology Solutions Holdings, Inc. | Parasitic channel mitigation via reaction with active species |
US9673281B2 (en) | 2015-09-08 | 2017-06-06 | Macom Technology Solutions Holdings, Inc. | Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions |
US20170069742A1 (en) * | 2015-09-08 | 2017-03-09 | M/A-Com Technology Solutions Holdings, Inc. | Parasitic channel mitigation via implantation of low atomic mass species |
US20170069721A1 (en) | 2015-09-08 | 2017-03-09 | M/A-Com Technology Solutions Holdings, Inc. | Parasitic channel mitigation using silicon carbide diffusion barrier regions |
US9627473B2 (en) | 2015-09-08 | 2017-04-18 | Macom Technology Solutions Holdings, Inc. | Parasitic channel mitigation in III-nitride material semiconductor structures |
US9806182B2 (en) | 2015-09-08 | 2017-10-31 | Macom Technology Solutions Holdings, Inc. | Parasitic channel mitigation using elemental diboride diffusion barrier regions |
US9799520B2 (en) | 2015-09-08 | 2017-10-24 | Macom Technology Solutions Holdings, Inc. | Parasitic channel mitigation via back side implantation |
US10211294B2 (en) | 2015-09-08 | 2019-02-19 | Macom Technology Solutions Holdings, Inc. | III-nitride semiconductor structures comprising low atomic mass species |
US9773898B2 (en) | 2015-09-08 | 2017-09-26 | Macom Technology Solutions Holdings, Inc. | III-nitride semiconductor structures comprising spatially patterned implanted species |
EP3179515A1 (en) * | 2015-12-10 | 2017-06-14 | Nexperia B.V. | Semiconductor device and method of making a semiconductor device |
JP6888013B2 (ja) | 2016-01-15 | 2021-06-16 | トランスフォーム テクノロジー,インコーポレーテッド | AL(1−x)Si(x)Oゲート絶縁体を有するエンハンスメントモードIII族窒化物デバイス |
US9960262B2 (en) | 2016-02-25 | 2018-05-01 | Raytheon Company | Group III—nitride double-heterojunction field effect transistor |
US9947616B2 (en) | 2016-03-17 | 2018-04-17 | Cree, Inc. | High power MMIC devices having bypassed gate transistors |
US10128365B2 (en) | 2016-03-17 | 2018-11-13 | Cree, Inc. | Bypassed gate transistors having improved stability |
US9786660B1 (en) | 2016-03-17 | 2017-10-10 | Cree, Inc. | Transistor with bypassed gate structure field |
US9960127B2 (en) | 2016-05-18 | 2018-05-01 | Macom Technology Solutions Holdings, Inc. | High-power amplifier package |
TWI813243B (zh) | 2016-05-31 | 2023-08-21 | 美商創世舫科技有限公司 | 包含漸變空乏層的三族氮化物裝置 |
US10354879B2 (en) | 2016-06-24 | 2019-07-16 | Cree, Inc. | Depletion mode semiconductor devices including current dependent resistance |
DE102017210711A1 (de) * | 2016-06-27 | 2017-12-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterbauelement |
US10134658B2 (en) | 2016-08-10 | 2018-11-20 | Macom Technology Solutions Holdings, Inc. | High power transistors |
US10411125B2 (en) | 2016-11-23 | 2019-09-10 | Mitsubishi Electric Research Laboratories, Inc. | Semiconductor device having high linearity-transconductance |
US10204995B2 (en) * | 2016-11-28 | 2019-02-12 | Infineon Technologies Austria Ag | Normally off HEMT with self aligned gate structure |
US10615273B2 (en) | 2017-06-21 | 2020-04-07 | Cree, Inc. | Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity |
US10268789B1 (en) | 2017-10-03 | 2019-04-23 | Cree, Inc. | Transistor amplifiers having node splitting for loop stability and related methods |
CN107895740A (zh) * | 2017-12-18 | 2018-04-10 | 山东聚芯光电科技有限公司 | 一种带有钝化层的GaN‑HEMT芯片的制作工艺 |
US10483352B1 (en) | 2018-07-11 | 2019-11-19 | Cree, Inc. | High power transistor with interior-fed gate fingers |
US10763334B2 (en) | 2018-07-11 | 2020-09-01 | Cree, Inc. | Drain and/or gate interconnect and finger structure |
US11038023B2 (en) | 2018-07-19 | 2021-06-15 | Macom Technology Solutions Holdings, Inc. | III-nitride material semiconductor structures on conductive silicon substrates |
US10600746B2 (en) | 2018-07-19 | 2020-03-24 | Cree, Inc. | Radio frequency transistor amplifiers and other multi-cell transistors having gaps and/or isolation structures between groups of unit cell transistors |
WO2020106537A1 (en) | 2018-11-19 | 2020-05-28 | Cree, Inc. | Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity |
US10770415B2 (en) | 2018-12-04 | 2020-09-08 | Cree, Inc. | Packaged transistor devices with input-output isolation and methods of forming packaged transistor devices with input-output isolation |
US11417746B2 (en) | 2019-04-24 | 2022-08-16 | Wolfspeed, Inc. | High power transistor with interior-fed fingers |
US10923585B2 (en) | 2019-06-13 | 2021-02-16 | Cree, Inc. | High electron mobility transistors having improved contact spacing and/or improved contact vias |
US10971612B2 (en) | 2019-06-13 | 2021-04-06 | Cree, Inc. | High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability |
US11239802B2 (en) | 2019-10-02 | 2022-02-01 | Wolfspeed, Inc. | Radio frequency transistor amplifiers having engineered instrinsic capacitances for improved performance |
US11145735B2 (en) | 2019-10-11 | 2021-10-12 | Raytheon Company | Ohmic alloy contact region sealing layer |
US11075271B2 (en) | 2019-10-14 | 2021-07-27 | Cree, Inc. | Stepped field plates with proximity to conduction channel and related fabrication methods |
US11569182B2 (en) | 2019-10-22 | 2023-01-31 | Analog Devices, Inc. | Aluminum-based gallium nitride integrated circuits |
WO2021120143A1 (zh) * | 2019-12-20 | 2021-06-24 | 电子科技大学 | 一种柔性微波功率晶体管及其制备方法 |
US11347001B2 (en) * | 2020-04-01 | 2022-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and method of fabricating the same |
US11670605B2 (en) | 2020-04-03 | 2023-06-06 | Wolfspeed, Inc. | RF amplifier devices including interconnect structures and methods of manufacturing |
CN115699326A (zh) | 2020-04-03 | 2023-02-03 | 沃孚半导体公司 | 具有源极、栅极和/或漏极导电通孔的基于iii族氮化物的射频晶体管放大器 |
US11837457B2 (en) | 2020-09-11 | 2023-12-05 | Wolfspeed, Inc. | Packaging for RF transistor amplifiers |
EP4128333A1 (en) | 2020-04-03 | 2023-02-08 | Wolfspeed, Inc. | Group iii nitride-based radio frequency amplifiers having back side source, gate and/or drain terminals |
US11356070B2 (en) | 2020-06-01 | 2022-06-07 | Wolfspeed, Inc. | RF amplifiers having shielded transmission line structures |
US20210313293A1 (en) | 2020-04-03 | 2021-10-07 | Cree, Inc. | Rf amplifier devices and methods of manufacturing |
US11340512B2 (en) | 2020-04-27 | 2022-05-24 | Raytheon Bbn Technologies Corp. | Integration of electronics with Lithium Niobate photonics |
US11769768B2 (en) | 2020-06-01 | 2023-09-26 | Wolfspeed, Inc. | Methods for pillar connection on frontside and passive device integration on backside of die |
US11228287B2 (en) | 2020-06-17 | 2022-01-18 | Cree, Inc. | Multi-stage decoupling networks integrated with on-package impedance matching networks for RF power amplifiers |
US11533025B2 (en) | 2020-06-18 | 2022-12-20 | Wolfspeed, Inc. | Integrated doherty amplifier with added isolation between the carrier and the peaking transistors |
US11533024B2 (en) | 2020-06-25 | 2022-12-20 | Wolfspeed, Inc. | Multi-zone radio frequency transistor amplifiers |
US11581859B2 (en) | 2020-06-26 | 2023-02-14 | Wolfspeed, Inc. | Radio frequency (RF) transistor amplifier packages with improved isolation and lead configurations |
US11887945B2 (en) | 2020-09-30 | 2024-01-30 | Wolfspeed, Inc. | Semiconductor device with isolation and/or protection structures |
US11742302B2 (en) | 2020-10-23 | 2023-08-29 | Wolfspeed, Inc. | Electronic device packages with internal moisture barriers |
US20220139852A1 (en) | 2020-10-30 | 2022-05-05 | Cree, Inc. | Transistor packages with improved die attach |
US20220157671A1 (en) | 2020-11-13 | 2022-05-19 | Cree, Inc. | Packaged rf power device with pcb routing |
US11791389B2 (en) | 2021-01-08 | 2023-10-17 | Wolfspeed, Inc. | Radio frequency transistor amplifiers having widened and/or asymmetric source/drain regions for improved on-resistance performance |
US12009417B2 (en) | 2021-05-20 | 2024-06-11 | Macom Technology Solutions Holdings, Inc. | High electron mobility transistors having improved performance |
US12015075B2 (en) | 2021-05-20 | 2024-06-18 | Macom Technology Solutions Holdings, Inc. | Methods of manufacturing high electron mobility transistors having a modified interface region |
US11842937B2 (en) | 2021-07-30 | 2023-12-12 | Wolfspeed, Inc. | Encapsulation stack for improved humidity performance and related fabrication methods |
US20230075505A1 (en) | 2021-09-03 | 2023-03-09 | Wolfspeed, Inc. | Metal pillar connection topologies for heterogeneous packaging |
US20230078017A1 (en) | 2021-09-16 | 2023-03-16 | Wolfspeed, Inc. | Semiconductor device incorporating a substrate recess |
EP4393009A1 (en) | 2021-10-01 | 2024-07-03 | MACOM Technology Solutions Holdings, Inc. | Bypassed gate transistors having improved stability |
US20230291367A1 (en) | 2022-03-08 | 2023-09-14 | Wolfspeed, Inc. | Group iii nitride-based monolithic microwave integrated circuits having multi-layer metal-insulator-metal capacitors |
US20240105823A1 (en) | 2022-09-23 | 2024-03-28 | Wolfspeed, Inc. | Barrier Structure for Dispersion Reduction in Transistor Devices |
US20240105824A1 (en) | 2022-09-23 | 2024-03-28 | Wolfspeed, Inc. | Barrier Structure for Sub-100 Nanometer Gate Length Devices |
US20240106397A1 (en) | 2022-09-23 | 2024-03-28 | Wolfspeed, Inc. | Transistor amplifier with pcb routing and surface mounted transistor die |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09172199A (ja) * | 1995-12-20 | 1997-06-30 | Mitsubishi Cable Ind Ltd | 窒化ガリウム系化合物半導体素子 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2465317A2 (fr) | 1979-03-28 | 1981-03-20 | Thomson Csf | Transistor a effet de champ a frequence de coupure elevee |
US4426656A (en) * | 1981-01-29 | 1984-01-17 | Bell Telephone Laboratories, Incorporated | GaAs FETs Having long-term stability |
NL8701497A (nl) * | 1987-06-26 | 1989-01-16 | Philips Nv | Halfgeleiderinrichting voor het opwekken van electromagnetische straling. |
JP2593960B2 (ja) * | 1990-11-29 | 1997-03-26 | シャープ株式会社 | 化合物半導体発光素子とその製造方法 |
US5192987A (en) | 1991-05-17 | 1993-03-09 | Apa Optics, Inc. | High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions |
US6242765B1 (en) * | 1991-05-21 | 2001-06-05 | Nec Corporation | Field effect transistor and its manufacturing method |
JP3086748B2 (ja) * | 1991-07-26 | 2000-09-11 | 株式会社東芝 | 高電子移動度トランジスタ |
JP2708992B2 (ja) * | 1991-12-20 | 1998-02-04 | シャープ株式会社 | AlGaInP系半導体発光装置の製造方法 |
US5656832A (en) * | 1994-03-09 | 1997-08-12 | Kabushiki Kaisha Toshiba | Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness |
US5739557A (en) * | 1995-02-06 | 1998-04-14 | Motorola, Inc. | Refractory gate heterostructure field effect transistor |
JPH09246185A (ja) * | 1996-03-14 | 1997-09-19 | Toshiba Corp | 成長結晶基板並びにそれを用いた半導体装置及びその製造方法 |
DE19613265C1 (de) * | 1996-04-02 | 1997-04-17 | Siemens Ag | Bauelement in stickstoffhaltigem Halbleitermaterial |
JP3449116B2 (ja) * | 1996-05-16 | 2003-09-22 | ソニー株式会社 | 半導体装置 |
JP3478005B2 (ja) * | 1996-06-10 | 2003-12-10 | ソニー株式会社 | 窒化物系化合物半導体のエッチング方法および半導体装置の製造方法 |
US5799028A (en) | 1996-07-18 | 1998-08-25 | Sdl, Inc. | Passivation and protection of a semiconductor surface |
US5831277A (en) * | 1997-03-19 | 1998-11-03 | Northwestern University | III-nitride superlattice structures |
JP3272259B2 (ja) * | 1997-03-25 | 2002-04-08 | 株式会社東芝 | 半導体装置 |
US6316820B1 (en) | 1997-07-25 | 2001-11-13 | Hughes Electronics Corporation | Passivation layer and process for semiconductor devices |
JP3372470B2 (ja) * | 1998-01-20 | 2003-02-04 | シャープ株式会社 | 窒化物系iii−v族化合物半導体装置 |
-
1998
- 1998-06-12 US US09/096,967 patent/US6316793B1/en not_active Expired - Lifetime
-
1999
- 1999-06-02 KR KR1020007014069A patent/KR100651148B1/ko not_active IP Right Cessation
- 1999-06-02 CN CNB998085324A patent/CN100356578C/zh not_active Expired - Lifetime
- 1999-06-02 WO PCT/US1999/012287 patent/WO2000004587A2/en active IP Right Grant
- 1999-06-02 JP JP2000560616A patent/JP2002520880A/ja active Pending
- 1999-06-02 CA CA2334823A patent/CA2334823C/en not_active Expired - Lifetime
- 1999-06-02 EP EP99961985A patent/EP1086496A2/en not_active Ceased
- 1999-06-02 AU AU11960/00A patent/AU1196000A/en not_active Abandoned
- 1999-06-02 US US09/701,951 patent/US6486502B1/en not_active Expired - Lifetime
- 1999-06-09 TW TW088109614A patent/TW417251B/zh not_active IP Right Cessation
-
2001
- 2001-03-29 US US09/821,360 patent/US6583454B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09172199A (ja) * | 1995-12-20 | 1997-06-30 | Mitsubishi Cable Ind Ltd | 窒化ガリウム系化合物半導体素子 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100815422B1 (ko) * | 2002-02-26 | 2008-03-20 | 주식회사 엘지이아이 | 이종구조 전계효과 트랜지스터 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
CN100356578C (zh) | 2007-12-19 |
US6583454B2 (en) | 2003-06-24 |
US6486502B1 (en) | 2002-11-26 |
US6316793B1 (en) | 2001-11-13 |
CN1309816A (zh) | 2001-08-22 |
US20010017370A1 (en) | 2001-08-30 |
WO2000004587A9 (en) | 2001-12-13 |
KR20010052773A (ko) | 2001-06-25 |
CA2334823C (en) | 2017-11-21 |
CA2334823A1 (en) | 2000-01-27 |
EP1086496A2 (en) | 2001-03-28 |
WO2000004587A2 (en) | 2000-01-27 |
AU1196000A (en) | 2000-02-07 |
TW417251B (en) | 2001-01-01 |
JP2002520880A (ja) | 2002-07-09 |
WO2000004587A3 (en) | 2000-06-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100651148B1 (ko) | 반절연성 탄화규소 기판 상의 질화물 기반 트랜지스터 | |
KR101359767B1 (ko) | 고 효율 및/또는 고 전력 밀도의 넓은 밴드갭 트랜지스터들 | |
JP5350585B2 (ja) | ミリメートル波動作のための窒化物ベースのトランジスタ | |
Kunihiro et al. | Experimental evaluation of impact ionization coefficients in GaN | |
US9035354B2 (en) | Heterojunction transistors having barrier layer bandgaps greater than channel layer bandgaps and related methods | |
JP5501618B2 (ja) | 高電子移動トランジスタ(hemt)、半導体デバイスおよびその製造方法 | |
US7525130B2 (en) | Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same | |
EP2432021B1 (en) | A transistor with a field plate | |
US20190035895A1 (en) | Field-effect transistor | |
US20030201459A1 (en) | Nitride based transistors on semi-insulating silicon carbide substrates | |
Higashiwaki et al. | Millimeter-wave GaN HFET technology | |
Kumar et al. | High performance 0.15/spl mu/m recessed gate AlGaN/GaN HEMTs on sapphire | |
EP4362105A2 (en) | Back-barrier for gallium nitride based high electron mobility transistors | |
US20240234560A9 (en) | Back-barrier for gallium nitride based high electron mobility transistors | |
Kumar et al. | Algan/gan hemts on sapphire |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121031 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20131101 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20141107 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20151016 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20161019 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20171018 Year of fee payment: 12 |
|
EXPY | Expiration of term |