TW417251B - Nitride based transistors on semi-insulating silicon carbide substrates - Google Patents

Nitride based transistors on semi-insulating silicon carbide substrates Download PDF

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TW417251B
TW417251B TW088109614A TW88109614A TW417251B TW 417251 B TW417251 B TW 417251B TW 088109614 A TW088109614 A TW 088109614A TW 88109614 A TW88109614 A TW 88109614A TW 417251 B TW417251 B TW 417251B
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gallium nitride
layer
transistor
aluminum
electron mobility
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Scott Thomas Sheppard
Scott Thomas Allen
John William Palmour
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Cree Research Inc
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

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Description

經濟部智慧財產局員工消費合作社印製 A7 ----- B7 五、發明說明（1 ) 發明之領域 女本發明係關於高頻率電晶體，特別是，關於-種導入以 氮=物爲基礎之主動層以及一碳化矽基材的高電子移動性 之電晶體。本發明係根據美國軍隊研究實驗室合約號碼 DAAUU-96-C-3604所發展，美國政府可以擁有本發明中某 些權利^ 發明背景 本發明係關於由半導體材料所形成且適用於高功率'高 溫度以及高頻率產品之電晶體。如熟悉半導體者所知的， 例如咬與坤化鎵等材料係被廣泛應用於低功率以及（於石夕 的例子中）低頻率的半導體元件中。然而，由於能帶間隙 (bandgap)相對而言較小（例如在室溫矽是丨12電子伏特， 砷化鎵是1.42電子伏特）且崩潰電壓也比較小，這些爲人熟 悉的半導體材料無法如期望般地進入高功率以及高頻率的 應用範圍内。 因此，對於高功率高溫度以及高頻率的應用與元件的興 趣已經轉到寬能帶間隙的半導體材料，例如碳化矽（ct碳化 石夕在室溫是2.996電子伏特），以及週期表第in族的氮化物 (例如氮化鎵在室溫是3.36電子伏特），這些材料相較於砷 化鎵與矽擁有比較高的電場崩潰強度以及比較高的電子飽 和速度。 特別令人感到興趣的元件是高電子移動性之電晶體 (HEMT ’ High Electron Mobility Transistor)，同時被稱爲調 制摻雜的場效電晶體（MODFET，Modulation Doped Field -4- 本紙張尺度適用令國國家標準（CNS)A4規格（2】0 X 297公釐〉 ------：-------裝--------訂---------線 {請先閱讀背面之注意事填寫本頁) 經濟部智慧財產局員工消費合作社印製 417251 at B7 五、發明說明（2 )
Effect Transistor)，這些元件在許多情況下提供操作上的 好處’因爲在兩個具有不同能帶間隙能量的半導體材料的 異接合（heterojunction)處會形成二維電子氣體（2DEG，two
Dimensional Electron Gas)，於其中能帶間隙較小的衬料擁 有較高的電子親和力。二維電子氣體是未摻雜、較小能帶 間隙材料中的一個累積層’而且能夠包含一非常高的片狀 電子濃度，濃度大約是每平方公分1〇>2至丨〇13個載子。另 外’產生於摻雜的、較寬能帶間隙的半導體之電子轉移到 二維電子氣體，由於離子化的不純物擴散被降低，使得電 子的移動性能夠提高。 由於高載子濃度以及高載子移動性的組合，使得高電子 移動性之電晶體相較於金屬半導體場效電晶體（MESFETs， Metal-Semiconductor Field Effect Transistors)於高頻率的應 用上擁有非常大的跨導（transconductance)以及較強的性能 等優點。 因爲氮化鎵/氮化鋁鎵材料系統中獨特的組合材料特 性’製造出來的高電子移動性之電晶體具有產生大量射頻 電力之電位，這些材料特性包括前述的高崩潰電場、寬能 帶間隙、大導電能帶補償（〇ffset)、以及高飽和電子飄移速 度。大部分二維電子氣體中的電子係歸因於氮化鋁鎵的擬 態變形（pseudomorphic)，請參考例如p.M. Asbeck等人於 Electronics Letters(1997 年，第 123 0 頁及第 1231頁’第 14 號’第 33 卷）以及 E.T. Yu 等人於.Applied Physics Leuers(1997年’第2794頁至第2796頁，第19號，第71卷） -5- 本纸張又度過用中國國家標準（CNS)A4規格（2]0 X 297公f ) --------------裝--------訂·--------線 (請先閱讀背面之注意事ifA填寫本頁) A7 B7 417251 五、發明說明（3) 的揭示。 氮化鎵/氮化鋁鎵系統中的高電子移動性之電晶體已經 被提出來，Khan等人的美國專利號碼第5,192,987號以及第 5,296,395號（母案及分割案）説明高電子移動性之電晶體， 其係由一位於一緩衝層以及基材上且介於氮化鋁鎵以及氮 化鎵之間的異接合（heterojunction)所形成；其他元件則已 經説明於 Gaska 等人發表於 IEEE Electron Device Letters， 1997年10月，第492頁，第10號，第18卷之「碳化矽基材 上氮化鋁鎵/氮化鎵異結構場效電晶體的高溫性能」，以 及 Ping等人發表於 IEEE Electron Device Letters，1998 年 2 月，第54頁’第2號，第19卷之「生長在P -型碳化矽基材 上的高電流氮化鋁鎵/氮化鎵異結構場效電晶體之直流電 與微波性能」。這些元件有些顯示fT値高達67千兆赫（K. Chu等人於1998年2月加州蒙特瑞，WOCSEMMAD)以及功 率密度於10千兆赫時高達每毫米2.84瓦特（G. Sullivan等人 發表於 IEEE Electron Device Letters，1998 年 6 月，第 1 9 8 頁，第6號，第1 9卷之「絕緣碳化矽中氮化鋁鎵異結構場 效電晶體的高功率10千兆赫操作j ，以及Wu等人發表於 IEEE Electron Device Letters，1998年2 月，第 50 頁，第 2 號，第19卷）。 儘管有這些進展’這些結果相對應的閘極週邊太小，以 至於播法產生相當數量具有高效率以及高相關倍率的總微 波功率’因此這些元件傾向於較具有學術性但不具備實用 價値。 -6- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------— II----------訂-----I---線 (請先閱讀背面之注意事承4填寫本頁) 經濟部智慧財產局員工消費合作社印製 i r； 經濟部智慧財產局員工消f合作社印製 B7 五、發明說明（4) 遠種類型的高功率半導元件於微波頻率範圍操作，用於 無線電頻率通訊網路以及雷達應用，並且提供大幅降低複 雜度以及無線電話基地台發射器成本的潛力；其他高功率 微波半導體元件的潛在應用包括取代傳統微波爐中成本較 高的眞空管以及變塵器，增加人造衛星發射器的壽命，以 及增進個人通訊系統基地台傳送器的效率。 因此，存在著持續發展高頻率高功率半導體爲基礎之微 波元件的需要。 發明g的及概述 因此’本發明之一目的在提供一種高電子移動性之電晶 體’其利用第三族氮化物電性的好處，並且比其他現有和 相關的元件具有更好的表現。 本發明以_種高電子移動性之電晶體來符合上述目的， 該電晶體包含一半絕緣碳化矽基材，一位於該基材上之氮 ίϋ緩衝.層，一位於該緩衝層上之絕緣氮化鎵層，一位於 邊虱化鎵層上之氮化銘鎵的主動結構，—位於該氮化紹鎵 主動結構上之純化層’以及分別與該氮化鋁鎵主動結構接 觸之源極、汲極以及閘極。 本發明之前述和其他目的、優點以及如何達成，根據下 列詳細説明配合圖式將更加清楚，其中： 圖式簡單説明 圖ί是根據本發明之電晶體的剖面圖； 圖2是根據本發明之電晶體的電流-電壓特性圖； 圖3是根據本發明之另一電晶體的二個小訊號特性的雙 本紙張中國國家鮮（CNS)A4雜（ϋ 297公t ) -------------裝·-- (請先閲讀背面之注意事JP--A填寫本頁) - --線· 經濟部智慧財產局員工消費合作社印製 417251 A7 _____B7 ____ 五、發明說明（5 ) 重圖；以及 圖4是根據本發明之又一電晶體的增益功率範圍的結果 圖。 丝佳具體實_姓之説明 本發明係一種高電子移動性之電晶體（hemt)，其整體結 構係例示於圖1剖面圖中的10，電晶體10包含一半絕緣碳 化梦（sic)基材η，其於較㈣施例中包含破切的4Η# 型態，其他可能的碳化矽多型態包括3c、6Η以及15R多 型態》 「半絕緣」這個詞是描述用的而不是完全的意涵， 通#是扣一碳化矽晶體，其在室溫的電阻係數等於或大於 1X/05歐姆-公分。其他於本技藝中者會將這樣的電阻係 數稱之爲「絕緣」，但是對於熟知技藝者能夠認出其所指 的特徵。 一氮化鋁緩衝層12係位於該基材n之上，並且提供一 適當的結晶結構轉移於碳化矽基材與該電晶體其餘的部分 之間。相較於藍寶石（Al2〇3)而言，碳化矽具有更接近第 三族氮化物的結晶格子配對，而藍寶石對於第三族氮化物 兀件而言是一非常常見的基材材料。該更接近的格子配對 使待第二族氮化物層比藍寶石上通常可取 品質。也許最重要的是，碳切也有料高的熱^: 數，使得碳化#材上第三族氮化物元件的總輸出功率不 會像形成在藍寶石上的相同元件—般受到基材的熱消散所 限制。而且，半絕緣碳化矽基材的可取得性提供元件、嗎離 的容量以及降低的寄生電容，使可開發的商業化元件得以 -8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） n n — ϋ n ^ i n Kk E t p *111 — I I» I y&J» n »1 n i 1 I n F (請先閱讀背面之注意事I?-i填寫本頁) 經濟部智慧財產局員工消費合作社印製 4Λ7251 ： --------- B7__________ 五、發明說明（6) 實行。 如同這裡所用到的’ 「第三族氮化物（Gr〇up m nitride)」這個詞指的是形成於氮以及週期表第三族中的元 素之間的半導化合物，通常是铭、鎵以及鋼，這個詞也指 —元素的以及第二代的化合物，例如氮化銘鎵以及氣化招 銦鎵。如同技藝中人士所熟知者，第三族元素可以與氮結 η形成雙元素的（例如氮化録）、三元素的（例如氮化鋁鎵） 以及第三代的（例如氮化鋁銦鎵）化合物。這些化合物都有 一摩爾的氮與總共一摩爾的第三族元素組合而成的經驗 式。因此，例如化學式AlxGai xN，其中1>x>〇，常被用來 描述它們。 適^的碳化碎基材可以從北卡羅來納州的達拉誤郡的 Cree Research公司’即本發明的受讓人，處取得。而且生 產它們的方法見於科學文章以及許多讓與同一人的美國專 利’包括但不僅止於：專利再頒發號碼34,86丨 '專利號第 4’946,547以及專利號第5,200,022。同樣的，第三族氮化物 的外延生長之技術已經成爲發展冗整而且於適當的寧學文 章以及讓與同—人的美國專利號碼第5 21〇 〇51、 5，393,993、5,523,589以及5,292,501號中被報導。 高電子移動性之電晶體1 0接著包含一位於該氮化銘緩衝 層1 2上之絕緣氮化鎵層1 3。該氮化鎵層比該氮化铭緩衝 層1 2還厚許多（位數總共約1至2微米），而該氮化鋁緩衝 層1 2的厚度約在100至5000埃之間。氮化鎵層1 3是如此的 生長使得電子載予濃度小於每立方公分1015個電予，這使 本纸張&度適用中國國家標準（〇STS)A4規格（210 X 297公釐〉 — — I — 1 — iltltl* ^^一 - ----II I --------- (請先閱讀背面之注意事^<填寫本頁) 經濟部智慧財產局員工消費合作社印制^ H?2SL A7 ___B7__ 五、發明說明（7 ) 其對於高頻率應用有足夠的絕緣越。 本發明的高電子移動性之電晶體1〇接著包括—以大括弧 14表示的主動結構於氮化鎵層13上，以於層13及14之間 的介面產生一導電帶中的能量偏移，該帶邙⑽幻的偏移產 生一能讓自由電子存在的窄電壓井，這產生一非常薄之高 濃度電子的薄片，也就是给元件性能特徵的二維電子氣體 (2DEG)。如同那些熟知這些元件者所認知的，這效果類似 於一具有非常薄通道的金屬半導體場效電晶體 (MESFET)。 於最佳實施例中，氮化鋁鎵部分1 4包含一三層結構，係 由一位於氮化鎵層13上的第一未摻雜氮化鋁鎵層15、一 位於該第一未摻雜層15上之傳導摻雜（較佳者爲〇_型）的氮 化招鎵層1 6、以及一位於該傳導摻雜的氮化鋁鎵層1 6上 的弟一未摻雜氮化鎵層17。於一第二可能的實施例中， 該三層氮化鋁鎵層1 5、1 6、1 7都刻意地未摻雜。同樣 地’可預期地該層1 5可以氮化銦鎵或氮化鋁銦鎵所形成， 而且所產生的元件會有這裡所説明的優勢性能以及特徵。 第三族氮化物系統中異結構的一個非常重要的性質對於 氮化鋁鎵/氮化鎵高電子移動性之電晶體的高性能是必要 的。除了因爲層13與14之間帶的偏移而產生的電子堆 積，自由電子的總數由相對於氮化鎵層1 3的氮化鋁鎵部分 14中之擬態變形應變（strain)而大幅提昇°由於局部的壓電 效應’該扭曲變形產生一相較於沒有該扭曲變形存在時更 可能存在的高電場以及高電子濃度。二維電子氣體中的最 -10- 本紙張尺度適用中SS家標準（CNS)A4規格<210x297公茇） ^^1 n n# f3 tt tf fv ft tMP tt 1 Iftf n 1— n n n * n n ^^1 ^^1 I (請先閱讀背面之注意事$填寫本頁) 417ί?51 Α7 經濟部智慧財產局員工消費合作社印製 B7 五、發明說明（8 ) 終片狀（sheet)電子濃度的約爲每平方公分10n個電子。 個別的源極、汲砝以及閘極接觸窗（圖！中的2 〇、2 1以 及2 2 )係作成與該氮化嫁的主動部分1 4接觸，而且於較 佳實施例中係作成與未摻雜氮化鋁鎵層17接觸。該未接雜 氮化铭鎵層17’同時也被稱作隔離層（J3arrjer iayer)，改善 電晶體的整流（蕭特基’ Schottky)閘極接觸的特性，縱使 可理解的疋該閘極接觸可以直接置於氮化鋁鎵的摻雜部分 且該元件仍然能夠操作。 圖1中’元件係沿著電流方向以剖面圖顯示。電子透過 氮化鋁鎵/氮化鎵介面的高傳導性二維電子氣體從源極接 觸窗流到汲極接觸窗。承載在閘極電極上的電壓靜電地控 制直接位於閘極底下的二維電子氣體中的電子數目，並因 此控制從源極到汲極的總電子流。閘極長度、閘極至 蟬，間距（lgs)、_至没極間距（lgd)係通常以微米u m) 爲單位表示的臨界尺寸。垂直於電流流動（與頁面正交）的 高電子移動性之電晶體的尺寸被稱作元件寬度或閑極週邊 而且在這裡係以毫米（mm)爲單位來説明。 同樣的，第一未摻雜氮化鋁鎵層15提供一間隔體層，俾 將二維電子氣體中的自由電子從落後於轉層丨6中的散射 中〜分離開來，因此藉由將井區中的電子從這些散射中心 分離開來以改善電子移動性，否則該散射中心會全控 電子的移動性。 根據本發明，當該元件包含—缝層加氮化紹嫁主動 邵上時，該元件具有特別好的性能特性已經被決定。 -11 - 械張Μ剌？簡家標準（CNSMj祕⑵-- — — — — — — — — — —圓 - i J f — II - — I1IIJI· ί請先閱讀背面之注意事垠填寫本頁) 經濟部智慧財產局員工消費合作社印製 A17251 五、發明說明（9 ) 如圖1中所例示，鈍化層2 3較佳地涵蓋源極、汲極以及閘 極接觸窗20、21以及22的緊鄰接觸部分，且視窗於其中 係開啓的以容許透過顯示於圖中從鈍化層2 3延伸出來的個 別打線接合24、25以及26來連接。雖然申請人不希望也 不意圖要被任何特定的理論所限制，顯然位於一具有整流 金屬接觸窗之高頻率元件表面的未終止化學帶能夠產生藉 由陷住一部份電子以打斷元件操作的充電狀態，而這些電 子如果不被陷住就會流往金屬半導體場效電晶體的通道 中’或者在一高移動性之電晶體的二維電子氣體中，本發 明之純化層2 3顯然減少或去除這個以及相類似的問題。 於本發明的較佳實施例中，源極與汲極接觸窗2 〇與2 i 較佳地係由鈦、鋁、及鎳合金所形成，且整流閘極接觸窗 較佳地係選自包含鈦、鉑、鉻、鈦鎢合金、以及矽化鉑等 族群。於一更佳實施例中，該歐姆接觸窗係由一鎳、矽、 及I的合金所形成，而該合金係藉由沉積這些材料的個別 層次然後將之回火所形成。因爲這合金系統去除鋁，其避 免當回火溫度超過鋁的熔點（660°C)時不想要的鋁污染於元 件的表面上。 純化層2 3較佳地係選自包含氮化矽（Si3N4)以及二氧化矽 (SiOO的族群，而氮化矽是特別較佳者；鈍化層23可以低 壓或電漿化學氣相沉積法（LPCVD或PECVD)形成。 如同熟悉這些元件者所了解，三元素化合物氮化鋁鎵一 般係根據化學式AlxGai.xN，其中1大於X且X大於〇(ι>χ>〇) 所形成’於本發明中，x値對於個別的氮化鋁鎵層1 5、！6 -12- 本纸張尺度適用中园國家標準（CNS)A-1規格（210 X 297公爱） n n n n n n I < n rf ·1 BK ft 1 n 一.OJ» Et n n n n n I {請先閱讀背面之注意事填寫本頁) A7 B7 經濟部智慧財產局員Η消費合作社印製 五、發明說明（ 及17可以是相同也可以是不同的，而且於一較佳實施例 中’ X値是（M5,所以該化學式是八丨〇15以〇8^。於此方 面，較高的鋁摩爾分率（較高的"χ")提烘較好的薄片充 電’但是卻$低結晶品質而且比較難生長。因& ,銘摩爾 分率的選擇較佳地係在不引起相當的結晶問題或太多電流 的情況下越高越好。目前，鋁摩爾分率介於〇1〇與〇5〇: 間被認爲是較佳的。 根據本發明的元件其特徵是性能非常的高，比目前於其 他地方所見到的還好。特別土也，根據本發明的高電子移動 性之電晶體已經藉由測量出來至少每毫米2瓦特的輸出功 率以及2毫米it件的總輸出功率最少4瓦特而將特徵表現出 來。元件的模型動作顯示可以從這些元件得到每毫米介於 4到5瓦特的輸出功率，而且，因爲4 〇毫米的元件預期是 可以取得的，這些元件職能夠產生多達丨期瓦特的 總輸出功率。 然而，一般習知技術者所能理解的，高電子移動性之電 晶體元件的最大寬度與頻率是有關的，也就是較寬的元件 被限制在較低的頻率，以及較高的頻率需要較窄的元件。 例如，於10千兆赫（GHz)，20毫米代表最大的元件寬度， 而於3GHz，元件的寬度約在5〇至6〇毫米。 因此’於另-方面’本發明能夠以—包含一半絕緣碳化 石夕基材、以及位於氮化鎵和氮化鋁鎵之間的一異接合的高 電子移動性之電晶體來表示’而且其特徵在於由圖2、圖 3、或圖4中的性能特徵〇 13- 本紙張反度適用中國固家標準（CNS)A‘l規格（2】ϋχ 297公餐) -------：----Li!裝 -------tT!丨 I — 丨·線 (請先閱讀背面之注意事嗜{%寫本1} 經濟部智慧財產局員工消費合作社印*'衣 4丄7姐 A7 B7 五、發明說明（11) 圖2至4的説明 圖2至4例示一些根據本發明的高電子移動性之電晶體的 特定特徵。圖2例示一個1毫米元件的輸出特性，其中閘極 長度（Lg)是0.45微米、閘極-源極距離（Lgs)是1微米、以及 閘極-汲極距離（Lgd)是1_5微米。閘極範園從2.〇伏特閘極 電壓開始’接著每步骤以1伏特逐步降低以產生圖2曲線的 特徵家族。如圖2所示，當閘極電壓爲-2.0伏特時，電流被 有效地關閉。 圖3疋一個不同變數的圖表：相對於頻率從1至1 〇 〇千兆 赫之短路電流增益的絕對値（I h 21 I)以及最大可用的增益 (MAG，以分貝表示）。圖3之頻率比例是對數的。電晶體 的尺寸列於圖3上而且代表一根據本發明之〇125毫米高電 子移動性之電晶體。如圖3所示，操作的單位增益頻率（q) 係由M2絕對値爲零分貝的點所確認。藉由使用一每八^ 分度減少六分貝的外插法，匕的保守估計是約2 8千兆赫。 圖4例示根據本發明一個〗· 5毫米高電子移動性之電晶體 基於一 1 〇千兆赫功率範圍的特性，汲極電壓是3 2伏特且 圖4例π輸出功率、功率增加效率以及增益。電晶體的尺 1被疊置於圖4的圖表之上。輸出功率形成圖4中的橫軸。 實施例 於本發明中，製造於半絕緣化碳切基材上的氮化嫁/ 氮化銘鎵高電子移動性之電晶體已經顯示了在㈣兆赫的 總輸出功率爲4瓦特CW(每毫米2.0瓦特），以及從具有功 率增加效率爲29%之2毫米問極寬度（16χ125微米）的小刀、 — — — — — ΓΙΙΙΙΙΙ· — (請先閱讀背面之注意事填寫本頁) -14 - A7 417251 _____BT_ 五、發明說明（12) 貝增益壓縮，以及1 〇分貝的聯合增益。到目前爲止，這代 表在一個第三族氮化物高電子移動性之電晶體X -帶（X-Band)所展現的最高之總功率以及聯合增益。 如圖1所示，外延結構包含一氮化鋁緩衝層、2微米的未 捧雜氮化嫁以及27奈米（nm，nanometer)的AI。14GaQ 86N。 該氮化链鎵頂端具有一 5 nm的未摻雜間隔層、一 12 nm的 施體層、以及一 1 〇 nm的未接雜隔離層，元件隔離係以台 地狀蝕刻（mesa etching)方式達成》歐姆接觸係鈦/鋁/鎳接 觸於900°C退火，橫跨一直徑3 5毫米的碳化矽晶圓，接觸 電阻以及片狀電阻的平均値分別是〇·36歐姆-毫米以及每平 方652歐姆，顯示該二維電子氣體於一大區域的高品質。 典型一個1毫米寬且LG=0.45、LGS=1.0以及LGD=1.5微米 的高電子移動性之電晶體的輸出特性顯示於圖2中。於 VGS=+2伏特時所達到的尖峰電流是每毫米680毫安培，以 及於接近VGS=-0.5伏特時的200 mS/mm最大非固有轉移電 導顯示這些元件優秀的電流處理能力，元件對於所有閘極 寬度的尺寸比例表現良好，範圍從丨2 5微米至2毫米；圖3 顯示於VDS=20伏特以及vgs=]伏特的0.35微米元件上小小 的訊號增益度量（△ = | h21 |以及〇=MAG)。該外插的單位增 益頻率卜爲28千兆赫。最大可用的增益（mag)直到網路分 析儀的最大頻率仍然保持在高處。小訊號參數，其係從35 千兆赫以下的資料所得到，被用來模式化該功率增益（圖3 上的點線）’其估計値fMAx爲114千兆赫。該MAG在1 〇千兆 赫時是13.8分貝。 -15- 本紙張尺巾® @豕標準(CNS)A4規格（210 X 297公复） .—...，丨丨i丨丨丨丨—裝·— (請先閱讀背面之注意事f填寫本買) 訂· -線- 經濟部智慧財產局員工消費合作社印製 A7 —442251_B7 五、發明說明（13) 晶圓負荷拉動（load-pull)度量係執行於一 3 2伏特汲極偏 差的10千兆赫。一個1_5毫米且L(J=〇,45、LGS=1.0以及 lgd=1 ·5微米的高電子移動性之電晶體的功率範圍顯示於 圖4中。約1 2分貝的線性增益直到輸入功率爲22 dBm仍然 維持著。於只有1分貝的壓縮時，達成總射頻功率3 54瓦 特（每毫米2.37瓦特）、PAE爲28.3%以及聯合增益爲1 1分 貝。一個對於其他大型元件的取樣，範圍介於1至2毫米， 顯示對於1分貝壓縮的功率密度係在每毫米2瓦特或以上， 其中數個2毫米的元件於4瓦特操作，於1·5毫米高電子移 動性之電晶體的晶圓上所測量到的最高功率於1 〇千死赫以 及2分貝的增益壓縮是3.9瓦特（每毫米2.6瓦特）。重要而 需要注意的是，這些元件於測試至壓縮過程中並未降級退 化，重回如同高功率度量之前一樣的性能。 於圖示以及説明書中，已經揭示本發明的典型實施例， 以及，雖然使用特殊用詞，他們僅被用來表示通用的以及 描述性的意義且不是爲了限制之目的，本發明的範園係由 下列的申請專利範圍所界定。 -------------裝--------訂---------線 (請先閱讀背面之注意事填寫本頁) 經濟部智慧財產局員工消費合作社印5衣 本紙張尺度適用中國國家標率（CNS)A4規格（210 X 297公釐）

Claims (1)

  1. Α8 Β8 C8 D8 圍 六、申請專利範 1. 一種高電子移動性之電晶體，包含： 一半絕緣碳化矽基材； 一位於該基材上之氮化鋁緩衝層； —位於該緩衝層上之絕緣氮化鎵層； 一位於該氮化鎵層上之氮化鋁鎵的主動結構； 一位於該氮化鋁鎵主動結構上之鈍化層；以及 分別與該氮化鋁鎵主動結構接觸之源極、没極以及閘 極接觸窗。 2. 如申請專利範圍第1項之高電子移動性之電晶體，其中 該氮化鋁鎵主動結構包含： 一位於該氮化鎵絕緣層上之第一未摻雜氮化鋁鎵層； 一位於該未摻雜氮化鋁層上之傳導性摻雜的氮化鋁鎵 層；以及 一位於該傳導性摻雜的氮化鋁層上之第二未摻雜氮化 銘嫁層。 3. 如申請專利範圍第2項之高電子移動性之電晶體，其 中： 該鈍化層係位於該第二未摻雜氮化鋁鎵層上； 該氮化鋁鎵主動結構包含一未摻雜的氮化鋁鎵層；以 及 該鈍化層係僅能由下列各物組成之群組中選出：二氧 化碎和氣化碎。 4-如申請專利範圍第1項之高電子移動性之電晶體，其中 該基材包含碳化矽的4 Η多型態，而且具有1 〇5歐姆-公分 17- 及尺度連不中國國家標準（CNS ) Α4規格（210Χ297公釐 ----„---:----^------ΪΤ--1---0 (請先閱讀背面之注意事r4填寫本頁) 絞濟部智慧H-id局§-、工fFC汽合作Ti印製 41.7251 AS B8 C8 D8 六、申請專利範圍 以上的體電阻係數。 5. 如申請專利範園第1項之高電子移動性之電晶體，其 中： 該源極以及汲極接觸窗包含一鈦、鋁及鎳的合金，或 者一鈦、矽及鎳的合金；以及 該整/虎閘極接觸窗係僅能由下列各物所组成之群组中 選出：鈦、鉑、鉻、鈦鎢合金' 以及矽化鉑。 6. —種高電子移動性之電晶體，包含： 一半絕緣碳化矽基材； 一位於二個不同第三族氮化物半導體材料之間的異接 合結構；以及 一位於該異接合結構及該基材之間的氮化鋁缓衝層。 7. 如申請專利範圍第6項之高電子移動性之電晶體，其 中： 該異接合包含相鄰接的氮化鋁鎵（A1GaN)層以及氮化鎵 (GaN)層； 該氮化鎵層係未摻雜的；以及 遠虱化鋁鎵層係由一位於該氮化鎵層上之第一未掺雜 氮化鋁鎵層、一位於該第一未摻雜氮化鋁鎵層上之摻雜 施體的氮化鋁鎵層、以及一位於該摻雜施體的氮化鋁鎵 層上之第二未摻雜氮化鋁鎵層。 8. 如申請專利範園第7項之高電子移動性之電晶體，其中 孩氮化鋁緩衝層係位於該基材上且該氮化鎵層係位於該 緩衝層上。 -18- 本紙掁尺度適用中國國家標车（CNS ) A4規格（210X297公釐） ----„---r---装------1T------故： (請先閱讀背面之注意事^-+彳填寫本頁) 經濟部智%財產局8工消費合作社印製 Λ8 BS C8 D8 417251 六、申請專利範圍 9. 如申請專利範圍第6項之高電子移動性之電晶體，更包 含： 歐姆接觸窗至該主動層以定義該高電子移動性之電晶 體的源極以及汲極；以及 一整流接觸窗至該主動層以定義該高電子移動性之電 晶體的閘極。 10. 如申請專利範圍第6項之高電子移動性之電晶體，其中 該源極及汲極接觸窗包含—鈇、碎、及錄的合金。 11‘如申請專利範圍第i 0項之高電子移動性之電晶體，更包 含一位於該閘極上與該整流接觸窗與該異接合上之純化 層’該鈍化層係僅能由下列各物所組成之群组中選出： 氮化矽及二氧化矽。 H 一種高電子移動性之電晶體，包含一半絕緣碳化矽基 材’以及一位於氮化鎵與氮化鋁鎵之間的異接合，且其 特徵在於其性能特徵係僅能由下列各物所組成之群組中 選出：圖2 '圖3和圖4的性能特徵。 13, 一種高電子移動性之電晶體，包含： 一半絕緣碳化矽基材； —位於二個不同第三族氮化物半導體材料之間的異接 合結構； 歐姆接觸窗至該異接合材料以分別定義該電晶體的源 極、閘極以及没極部分：以及 一覆蓋該異接合材料的頂表面且至少覆蓋部分該歐姆 接觸窗的纯化層。 -19- 巧中國國家標準YCNS>A4規格（210X297公着） ----r--l---^-------IT------^ {請先閲讀背面之注意事:寫本頁) 經濟部智总財產局員工4費合作社印製 經濟部智慧財產局員工消費合作社印M衣 WII D8 六、申請專利範圍 14. 如申請專利範圍第丨3項之高電子移動性之電晶體，其 中： 該鈍化層係僅能由下列各物所組成之群組中選出：氮 化矽及二氧化矽； 該異接合包含相鄰接的氮化鋁鎵層以及氮化鎵層；以 及 該高電子移動性之電晶體更包含一位於該基材與該異 接合結構之間的氮化鋁緩衝層。 15. 如申請專利範圍第丨4項之高電子移動性之電晶體，其 中： 該氮化鎵層係未摻雜的；以及 該氮化鋁鎵層係由一位於該氮化鎵層上之第一未摻雜 氮化鋁鎵層、一位於該第一未摻雜氮化鋁鎵層上之摻雜 施體的氮化鋁鎵層、以及 一位於該挣雜施體的氮化銘鎵層上之第二未掺雜氣化 銘嫁層。 丨6.如申請專利範圍第1 5項之高電子移動性之電晶體，其 中所有截三個氮化鋁鎵層具有相同的鋁與鎵的摩爾分 率 〇 17. 如申請專利範圍第1 5項之高電子移動性之電晶體，其 中该二個氮化鋁鎵層之中至少有兩個氮化鋁鎵層具有不 同的鋁與鎵的摩爾分率。 18. 如申請專利範圍第丨4項之高電子移動性之電晶體，其 中该氮化鋁緩衝層係位於該基材上且該氮化鎵層係位於 -20- 本纸狀㈣种國國家標準（CNS)A4規格; 297公釐） — [ϊ-ΙΓΙΙί — — — · -1—ιιιί — ^« — 11--I I I i請先間讀背面之注意事氣^寫本頁) 經濟部智慧財產局員工消費合作社印製 A8 Λ Β8 夂 W51_g 六、申請專利範圍 該緩衝層上。 19.如申請專利範圍第I 3項之高電子移動性之電晶體，其 中 該歐姆接觸窗包含一鈦、鋁及鎳的合金，且該整流閘 極接觸窗係僅能由下列各物所組成之群组中選出：鈦、 鉑、鉻、鈦鎢合金、以及矽化鉑等族群；以及 該源極及汲極接觸窗包含一鈦、矽、及鎳的合金。 -21 - 本纸悵纥嘎遗用中國國家標準（CNS)A4規格（210 X 297公釐） — — — — — J — — — — -裝------—訂-------•線 (請先閱讀背面之注意事項 4寫本頁)
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