KR100651042B1 - 네거티브 레지스트 조성물 - Google Patents

네거티브 레지스트 조성물 Download PDF

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Publication number
KR100651042B1
KR100651042B1 KR1020000046253A KR20000046253A KR100651042B1 KR 100651042 B1 KR100651042 B1 KR 100651042B1 KR 1020000046253 A KR1020000046253 A KR 1020000046253A KR 20000046253 A KR20000046253 A KR 20000046253A KR 100651042 B1 KR100651042 B1 KR 100651042B1
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KR
South Korea
Prior art keywords
group
acid
groups
resist composition
substituted
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Expired - Lifetime
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KR1020000046253A
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English (en)
Korean (ko)
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KR20010021256A (ko
Inventor
우니시카즈야
Original Assignee
후지 샤신 필름 가부시기가이샤
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Publication of KR20010021256A publication Critical patent/KR20010021256A/ko
Application granted granted Critical
Publication of KR100651042B1 publication Critical patent/KR100651042B1/ko
Assigned to 후지필름 가부시키가이샤 reassignment 후지필름 가부시키가이샤 권리의 전부이전등록 Assignors: 후지필름 홀딩스 가부시끼가이샤
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/128—Radiation-activated cross-linking agent containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020000046253A 1999-08-11 2000-08-10 네거티브 레지스트 조성물 Expired - Lifetime KR100651042B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1999-227792 1999-08-11
JP22779299A JP3929653B2 (ja) 1999-08-11 1999-08-11 ネガ型レジスト組成物

Publications (2)

Publication Number Publication Date
KR20010021256A KR20010021256A (ko) 2001-03-15
KR100651042B1 true KR100651042B1 (ko) 2006-11-28

Family

ID=16866470

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000046253A Expired - Lifetime KR100651042B1 (ko) 1999-08-11 2000-08-10 네거티브 레지스트 조성물

Country Status (5)

Country Link
US (1) US6511783B1 (https=)
EP (1) EP1076261B1 (https=)
JP (1) JP3929653B2 (https=)
KR (1) KR100651042B1 (https=)
DE (1) DE60039274D1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101392291B1 (ko) * 2007-04-13 2014-05-07 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 박막트랜지스터기판의 제조방법

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4070393B2 (ja) 2000-01-17 2008-04-02 富士フイルム株式会社 ネガ型レジスト組成物
JP4092083B2 (ja) * 2001-03-21 2008-05-28 富士フイルム株式会社 電子線又はｘ線用ネガ型レジスト組成物
JP4645789B2 (ja) * 2001-06-18 2011-03-09 Ｊｓｒ株式会社 ネガ型感放射線性樹脂組成物
US20030235775A1 (en) * 2002-06-13 2003-12-25 Munirathna Padmanaban Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
US7083892B2 (en) * 2002-06-28 2006-08-01 Fuji Photo Film Co., Ltd. Resist composition
JP4213925B2 (ja) 2002-08-19 2009-01-28 富士フイルム株式会社 ネガ型レジスト組成物
DE10244197A1 (de) * 2002-09-23 2004-04-08 Infineon Technologies Ag Zusammensetzung, die eine elektrisch leitfähige Lackschicht bildet und ein Verfahren zur Strukturierung eines Fotoresists unter Verwendung der Lackschicht
JP5745368B2 (ja) * 2011-09-02 2015-07-08 富士フイルム株式会社 ネガ型感活性光線性又は感放射線性樹脂組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク
CN105324720B (zh) 2013-06-26 2020-01-03 日产化学工业株式会社 包含被置换的交联性化合物的抗蚀剂下层膜形成用组合物
JP6520091B2 (ja) * 2013-12-16 2019-05-29 Jsr株式会社 着色組成物、着色硬化膜及び表示素子
JP6313604B2 (ja) * 2014-02-05 2018-04-18 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、及び電子デバイスの製造方法
KR101598826B1 (ko) 2015-08-28 2016-03-03 영창케미칼 주식회사 에칭 내성이 우수한 i-선용 네가티브형 포토레지스트 조성물
JP2017090849A (ja) * 2015-11-17 2017-05-25 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 高耐熱性レジスト組成物およびそれを用いたパターン形成方法
US9872399B1 (en) * 2016-07-22 2018-01-16 International Business Machines Corporation Implementing backdrilling elimination utilizing anti-electroplate coating

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DE3821584A1 (de) 1988-06-25 1989-12-28 Hoechst Ag Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichungsmaterial fuer hochenergetische strahlung
JPH02150848A (ja) 1988-12-02 1990-06-11 Hitachi Ltd 光退色性放射線感応性組成物およびそれを用いたパターン形成法
US5128232A (en) 1989-05-22 1992-07-07 Shiply Company Inc. Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units
CA2019693A1 (en) 1989-07-07 1991-01-07 Karen Ann Graziano Acid-hardening photoresists of improved sensitivity
JP2500533B2 (ja) 1990-01-30 1996-05-29 和光純薬工業株式会社 新規なジアゾジスルホン化合物
DE4006190A1 (de) 1990-02-28 1991-08-29 Hoechst Ag Negativ arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
JP2973585B2 (ja) 1990-06-15 1999-11-08 三菱化学株式会社 ネガ型感光性組成物
JPH04291259A (ja) 1991-03-19 1992-10-15 Nippon Zeon Co Ltd レジスト組成物
JPH04367864A (ja) 1991-06-14 1992-12-21 Nippon Zeon Co Ltd レジスト組成物
JP2722870B2 (ja) 1991-06-14 1998-03-09 日本ゼオン株式会社 レジスト組成物
US5286600A (en) 1991-08-27 1994-02-15 Mitsubishi Kasei Corporation Negative photosensitive composition and method for forming a resist pattern by means thereof
JP3016231B2 (ja) 1991-11-15 2000-03-06 ジェイエスアール株式会社 ネガ型レジスト組成物
JP3259263B2 (ja) 1992-06-22 2002-02-25 ジェイエスアール株式会社 ネガ型感放射線性樹脂組成物
US5389491A (en) 1992-07-15 1995-02-14 Matsushita Electric Industrial Co., Ltd. Negative working resist composition
JPH06236024A (ja) 1992-09-24 1994-08-23 Sumitomo Chem Co Ltd フォトレジスト組成物
JPH06199770A (ja) 1992-12-28 1994-07-19 Japan Synthetic Rubber Co Ltd 新規オニウム塩およびそれを含有する感放射線性樹脂 組成物
US5344742A (en) 1993-04-21 1994-09-06 Shipley Company Inc. Benzyl-substituted photoactive compounds and photoresist compositions comprising same
JPH083635A (ja) 1994-06-15 1996-01-09 Kobe Steel Ltd 靱性の優れた鋼板の製造方法
US5731364A (en) * 1996-01-24 1998-03-24 Shipley Company, L.L.C. Photoimageable compositions comprising multiple arylsulfonium photoactive compounds
JP3636827B2 (ja) * 1996-07-01 2005-04-06 富士写真フイルム株式会社 ネガ型画像記録材料
JP3798504B2 (ja) 1997-04-21 2006-07-19 富士写真フイルム株式会社 ネガ型画像記録材料
ATE323602T1 (de) * 1999-05-31 2006-05-15 Fuji Photo Film Co Ltd Bildaufzeichnungsmaterial und flachdruckplatte mit diesem bildaufzeichnungsmaterial

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101392291B1 (ko) * 2007-04-13 2014-05-07 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 박막트랜지스터기판의 제조방법

Also Published As

Publication number Publication date
DE60039274D1 (de) 2008-08-07
EP1076261B1 (en) 2008-06-25
EP1076261A1 (en) 2001-02-14
JP2001051417A (ja) 2001-02-23
KR20010021256A (ko) 2001-03-15
US6511783B1 (en) 2003-01-28
JP3929653B2 (ja) 2007-06-13

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