KR100467289B1 - 박막 트랜지스터의 제조방법 - Google Patents

박막 트랜지스터의 제조방법 Download PDF

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Publication number
KR100467289B1
KR100467289B1 KR10-2001-0015667A KR20010015667A KR100467289B1 KR 100467289 B1 KR100467289 B1 KR 100467289B1 KR 20010015667 A KR20010015667 A KR 20010015667A KR 100467289 B1 KR100467289 B1 KR 100467289B1
Authority
KR
South Korea
Prior art keywords
film
gas
etching
silicon
metal
Prior art date
Application number
KR10-2001-0015667A
Other languages
English (en)
Korean (ko)
Other versions
KR20010093694A (ko
Inventor
키도슈사쿠
Original Assignee
엔이씨 엘씨디 테크놀로지스, 엘티디.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엔이씨 엘씨디 테크놀로지스, 엘티디. filed Critical 엔이씨 엘씨디 테크놀로지스, 엘티디.
Publication of KR20010093694A publication Critical patent/KR20010093694A/ko
Application granted granted Critical
Publication of KR100467289B1 publication Critical patent/KR100467289B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Thin Film Transistor (AREA)
  • Drying Of Semiconductors (AREA)
KR10-2001-0015667A 2000-03-28 2001-03-26 박막 트랜지스터의 제조방법 KR100467289B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000089379A JP3425925B2 (ja) 2000-03-28 2000-03-28 薄膜トランジスタの製造方法
JP??2000-089379? 2000-03-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020040076956A Division KR100578611B1 (ko) 2000-03-28 2004-09-24 박막 트랜지스터의 제조방법

Publications (2)

Publication Number Publication Date
KR20010093694A KR20010093694A (ko) 2001-10-29
KR100467289B1 true KR100467289B1 (ko) 2005-01-24

Family

ID=18605148

Family Applications (2)

Application Number Title Priority Date Filing Date
KR10-2001-0015667A KR100467289B1 (ko) 2000-03-28 2001-03-26 박막 트랜지스터의 제조방법
KR1020040076956A KR100578611B1 (ko) 2000-03-28 2004-09-24 박막 트랜지스터의 제조방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020040076956A KR100578611B1 (ko) 2000-03-28 2004-09-24 박막 트랜지스터의 제조방법

Country Status (2)

Country Link
JP (1) JP3425925B2 (ja)
KR (2) KR100467289B1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7618898B2 (en) 2004-03-31 2009-11-17 Nec Corporation Method and apparatus for forming contact hole
JP5578389B2 (ja) 2006-05-16 2014-08-27 Ｎｌｔテクノロジー株式会社 積層膜パターン形成方法及びゲート電極形成方法
JP5101059B2 (ja) * 2006-07-28 2012-12-19 東京エレクトロン株式会社 半導体装置の製造方法、半導体装置の製造装置、コンピュータ記憶媒体及び処理レシピが記憶された記憶媒体
JP5480480B2 (ja) * 2007-09-03 2014-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100986907B1 (ko) * 2008-09-22 2010-10-08 하이디스 테크놀로지 주식회사 액정 디스플레이 패널 제조방법 및 그에 의해 제조된 액정 디스플레이 패널
CN102820224A (zh) * 2011-06-09 2012-12-12 上海中科高等研究院 用于tft干刻工艺中的界面层处理方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058840A (ja) * 1998-08-05 2000-02-25 Sharp Corp 半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058840A (ja) * 1998-08-05 2000-02-25 Sharp Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2001274411A (ja) 2001-10-05
KR100578611B1 (ko) 2006-05-10
KR20040088013A (ko) 2004-10-15
JP3425925B2 (ja) 2003-07-14
KR20010093694A (ko) 2001-10-29

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