KR100438160B1 - 인덕터와 캐패시터를 갖는 소자 및 그의 제작방법 - Google Patents

인덕터와 캐패시터를 갖는 소자 및 그의 제작방법 Download PDF

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Publication number
KR100438160B1
KR100438160B1 KR10-2002-0011721A KR20020011721A KR100438160B1 KR 100438160 B1 KR100438160 B1 KR 100438160B1 KR 20020011721 A KR20020011721 A KR 20020011721A KR 100438160 B1 KR100438160 B1 KR 100438160B1
Authority
KR
South Korea
Prior art keywords
inductor
support layer
capacitor
substrate
dielectric material
Prior art date
Application number
KR10-2002-0011721A
Other languages
English (en)
Korean (ko)
Other versions
KR20030072145A (ko
Inventor
이문철
송인상
홍영택
정성혜
홍병유
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR10-2002-0011721A priority Critical patent/KR100438160B1/ko
Priority to US10/373,735 priority patent/US7169684B2/en
Priority to EP03004397A priority patent/EP1343249A3/fr
Priority to JP2003056947A priority patent/JP4034669B2/ja
Publication of KR20030072145A publication Critical patent/KR20030072145A/ko
Application granted granted Critical
Publication of KR100438160B1 publication Critical patent/KR100438160B1/ko
Priority to US11/655,915 priority patent/US7939909B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
    • H01L27/016—Thin-film circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0078—Constructional details comprising spiral inductor on a substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0085—Multilayer, e.g. LTCC, HTCC, green sheets
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/165—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed inductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/1006—Non-printed filter
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10431—Details of mounted components
    • H05K2201/10507—Involving several components
    • H05K2201/10545—Related components mounted on both sides of the PCB
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Filters And Equalizers (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
KR10-2002-0011721A 2002-03-05 2002-03-05 인덕터와 캐패시터를 갖는 소자 및 그의 제작방법 KR100438160B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR10-2002-0011721A KR100438160B1 (ko) 2002-03-05 2002-03-05 인덕터와 캐패시터를 갖는 소자 및 그의 제작방법
US10/373,735 US7169684B2 (en) 2002-03-05 2003-02-27 Device having inductors and capacitors and a fabrication method thereof
EP03004397A EP1343249A3 (fr) 2002-03-05 2003-03-03 Dispositif comportant des inductances et capacités, et sa méthode de fabrication
JP2003056947A JP4034669B2 (ja) 2002-03-05 2003-03-04 インダクタとキャパシタを有する素子及びその作製方法
US11/655,915 US7939909B2 (en) 2002-03-05 2007-01-22 Device having inductors and capacitors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2002-0011721A KR100438160B1 (ko) 2002-03-05 2002-03-05 인덕터와 캐패시터를 갖는 소자 및 그의 제작방법

Publications (2)

Publication Number Publication Date
KR20030072145A KR20030072145A (ko) 2003-09-13
KR100438160B1 true KR100438160B1 (ko) 2004-07-01

Family

ID=27751987

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-0011721A KR100438160B1 (ko) 2002-03-05 2002-03-05 인덕터와 캐패시터를 갖는 소자 및 그의 제작방법

Country Status (4)

Country Link
US (2) US7169684B2 (fr)
EP (1) EP1343249A3 (fr)
JP (1) JP4034669B2 (fr)
KR (1) KR100438160B1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101326355B1 (ko) * 2012-08-02 2013-11-11 숭실대학교산학협력단 무선통신을 위한 ｉｃ 집적 회로 제조방법 및 그 ｉｃ 집적 회로

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7348654B2 (en) * 2002-12-09 2008-03-25 Taiwan Semiconductor Manufacturing Co., Ltd Capacitor and inductor scheme with e-fuse application
US6800534B2 (en) * 2002-12-09 2004-10-05 Taiwan Semiconductor Manufacturing Company Method of forming embedded MIM capacitor and zigzag inductor scheme
EP1596403A1 (fr) * 2004-05-13 2005-11-16 Seiko Epson Corporation Inducteur plan et son procédé de fabrication
KR100631214B1 (ko) * 2005-07-29 2006-10-04 삼성전자주식회사 밸룬이 장착된 밸런스 필터 패키징 칩 및 그 제조방법
TWI268745B (en) * 2005-12-08 2006-12-11 Ind Tech Res Inst A multilayer printed circuit board embedded with a filter
KR100867150B1 (ko) * 2007-09-28 2008-11-06 삼성전기주식회사 칩 캐패시터가 내장된 인쇄회로기판 및 칩 캐패시터의 내장방법
FR2961345A1 (fr) * 2010-06-10 2011-12-16 St Microelectronics Tours Sas Circuit integre passif
CN104519661B (zh) * 2013-10-08 2017-11-10 中国科学院上海微系统与信息技术研究所 电容电感复合结构及其制造方法
CN105742251B (zh) * 2014-12-09 2019-10-18 联华电子股份有限公司 具有电感和金属-绝缘层-金属电容的结构
US9966182B2 (en) 2015-11-16 2018-05-08 Globalfoundries Inc. Multi-frequency inductors with low-k dielectric area
JP2018041767A (ja) * 2016-09-05 2018-03-15 アンリツ株式会社 波形整形回路及びその製造方法とパルスパターン発生器
US10446487B2 (en) * 2016-09-30 2019-10-15 Invensas Bonding Technologies, Inc. Interface structures and methods for forming same
WO2018169968A1 (fr) 2017-03-16 2018-09-20 Invensas Corporation Réseaux de del à liaison directe et applications
US11169326B2 (en) 2018-02-26 2021-11-09 Invensas Bonding Technologies, Inc. Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects
US10292269B1 (en) 2018-04-11 2019-05-14 Qualcomm Incorporated Inductor with metal-insulator-metal (MIM) capacitor
US11515291B2 (en) 2018-08-28 2022-11-29 Adeia Semiconductor Inc. Integrated voltage regulator and passive components
US11762200B2 (en) 2019-12-17 2023-09-19 Adeia Semiconductor Bonding Technologies Inc. Bonded optical devices
US11552236B2 (en) 2020-01-24 2023-01-10 International Business Machines Corporation Superconducting qubit capacitance and frequency of operation tuning

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0637255A (ja) * 1992-07-14 1994-02-10 Rohm Co Ltd Ｌｃ回路の構造
KR950701136A (ko) * 1992-04-08 1995-02-20 제이. 리디 글렌 막 유전체 격리 ic 제조(membrane dielectric isolation ic fabrication)
JPH08250962A (ja) * 1995-03-10 1996-09-27 Tdk Corp Ｌｃフィルタ
KR970007400U (ko) * 1995-07-14 1997-02-21 주식회사쎄라텍 칩 적층형 lc 필터
JPH09294040A (ja) * 1996-04-26 1997-11-11 Tokin Corp 薄膜ｌｃフィルタ
JPH1065476A (ja) * 1996-08-23 1998-03-06 Ngk Spark Plug Co Ltd Ｌｃローパスフィルタ

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1A (en) 1836-07-13 John Ruggles Locomotive steam-engine for rail and other roads
JPS50117744U (fr) 1974-03-08 1975-09-26
JPS5820549Y2 (ja) 1976-09-06 1983-04-28 古河電気工業株式会社 包装用発泡プラスチック緩衝材
JPH04337913A (ja) 1991-05-15 1992-11-25 Matsushita Electric Ind Co Ltd チップ形ノイズ除去フィルタ
JPH05234811A (ja) 1992-02-24 1993-09-10 Toho Aen Kk 面実装型ｌｃノイズフィルター及びその製造方法
DE69321907T2 (de) * 1992-03-19 1999-04-22 Tdk Corp., Tokio/Tokyo Hybrider koppler
JPH06163321A (ja) 1992-11-26 1994-06-10 Tdk Corp 高周波ｌｃ複合部品
JPH06151181A (ja) 1992-11-12 1994-05-31 Matsushita Electric Ind Co Ltd 直列結合型ｌｃ複合素子とその製造方法
US5351163A (en) * 1992-12-30 1994-09-27 Westinghouse Electric Corporation High Q monolithic MIM capacitor
DE4432727C1 (de) * 1994-09-14 1996-03-14 Siemens Ag Integrierte Schaltungsstruktur mit einem aktiven Mikrowellenbauelement und mindestens einem passiven Bauelement
WO1996013858A2 (fr) * 1994-10-31 1996-05-09 Philips Electronics N.V. Dispositif a semi-conducteurs integre pour micro-ondes avec un composant actif et un composant passif
JPH08236353A (ja) 1995-02-23 1996-09-13 Mitsubishi Materials Corp 小型インダクタ及びその製造方法
US5825092A (en) * 1996-05-20 1998-10-20 Harris Corporation Integrated circuit with an air bridge having a lid
US5773870A (en) * 1996-09-10 1998-06-30 National Science Council Membrane type integrated inductor and the process thereof
US5874770A (en) * 1996-10-10 1999-02-23 General Electric Company Flexible interconnect film including resistor and capacitor layers
JPH10214722A (ja) 1997-01-31 1998-08-11 Hokuriku Electric Ind Co Ltd チップ部品
US5841350A (en) * 1997-06-27 1998-11-24 Checkpoint Systems, Inc. Electronic security tag useful in electronic article indentification and surveillance system
US6005197A (en) * 1997-08-25 1999-12-21 Lucent Technologies Inc. Embedded thin film passive components
JP4093327B2 (ja) 1997-09-26 2008-06-04 Ｔｄｋ株式会社 高周波部品およびその製造方法
EP0915513A1 (fr) * 1997-10-23 1999-05-12 STMicroelectronics S.r.l. Bobine intégrée à haut facteur de qualité et son procédé de fabrication
US6303423B1 (en) * 1998-12-21 2001-10-16 Megic Corporation Method for forming high performance system-on-chip using post passivation process
KR100580162B1 (ko) * 1999-10-15 2006-05-16 삼성전자주식회사 박막형 대역 통과 필터 및 그 제조방법
JP2001308667A (ja) 2000-04-24 2001-11-02 Hitachi Ltd Ｌｃフィルタ
SG98398A1 (en) * 2000-05-25 2003-09-19 Inst Of Microelectronics Integrated circuit inductor
JP4256575B2 (ja) 2000-08-15 2009-04-22 パナソニック株式会社 バイアホールを備えた高周波受動回路および高周波増幅器
US7038294B2 (en) * 2001-03-29 2006-05-02 Taiwan Semiconductor Manufacturing Company, Ltd. Planar spiral inductor structure with patterned microelectronic structure integral thereto
KR100382765B1 (ko) * 2001-06-15 2003-05-09 삼성전자주식회사 송수신용 수동소자와 그 집적모듈 및 그 제조방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950701136A (ko) * 1992-04-08 1995-02-20 제이. 리디 글렌 막 유전체 격리 ic 제조(membrane dielectric isolation ic fabrication)
JPH0637255A (ja) * 1992-07-14 1994-02-10 Rohm Co Ltd Ｌｃ回路の構造
JPH08250962A (ja) * 1995-03-10 1996-09-27 Tdk Corp Ｌｃフィルタ
KR970007400U (ko) * 1995-07-14 1997-02-21 주식회사쎄라텍 칩 적층형 lc 필터
JPH09294040A (ja) * 1996-04-26 1997-11-11 Tokin Corp 薄膜ｌｃフィルタ
JPH1065476A (ja) * 1996-08-23 1998-03-06 Ngk Spark Plug Co Ltd Ｌｃローパスフィルタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101326355B1 (ko) * 2012-08-02 2013-11-11 숭실대학교산학협력단 무선통신을 위한 ｉｃ 집적 회로 제조방법 및 그 ｉｃ 집적 회로

Also Published As

Publication number Publication date
KR20030072145A (ko) 2003-09-13
EP1343249A2 (fr) 2003-09-10
US20070115702A1 (en) 2007-05-24
US7939909B2 (en) 2011-05-10
EP1343249A3 (fr) 2009-09-09
JP4034669B2 (ja) 2008-01-16
JP2003273684A (ja) 2003-09-26
US7169684B2 (en) 2007-01-30
US20030168716A1 (en) 2003-09-11

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