KR100433713B1 - 반도체기억장치 - Google Patents

반도체기억장치 Download PDF

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Publication number
KR100433713B1
KR100433713B1 KR1019960021124A KR19960021124A KR100433713B1 KR 100433713 B1 KR100433713 B1 KR 100433713B1 KR 1019960021124 A KR1019960021124 A KR 1019960021124A KR 19960021124 A KR19960021124 A KR 19960021124A KR 100433713 B1 KR100433713 B1 KR 100433713B1
Authority
KR
South Korea
Prior art keywords
capacitor
voltage
electrodes
pair
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019960021124A
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English (en)
Korean (ko)
Other versions
KR970003265A (ko
Inventor
마사토시 하세기와
가즈히코 가지가야
칸 다케우치
가츠미 마츠노
오사무 나가시마
Original Assignee
가부시끼가이샤 히다치 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 히다치 세이사꾸쇼 filed Critical 가부시끼가이샤 히다치 세이사꾸쇼
Publication of KR970003265A publication Critical patent/KR970003265A/ko
Application granted granted Critical
Publication of KR100433713B1 publication Critical patent/KR100433713B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
KR1019960021124A 1995-06-15 1996-06-13 반도체기억장치 Expired - Fee Related KR100433713B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7174296A JPH098247A (ja) 1995-06-15 1995-06-15 半導体記憶装置
JP95-174296 1995-06-15

Publications (2)

Publication Number Publication Date
KR970003265A KR970003265A (ko) 1997-01-28
KR100433713B1 true KR100433713B1 (ko) 2004-08-25

Family

ID=15976191

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960021124A Expired - Fee Related KR100433713B1 (ko) 1995-06-15 1996-06-13 반도체기억장치

Country Status (4)

Country Link
US (1) US5726930A (enExample)
JP (1) JPH098247A (enExample)
KR (1) KR100433713B1 (enExample)
TW (1) TW302540B (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
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US5682344A (en) * 1995-09-11 1997-10-28 Micron Technology, Inc. Destructive read protection using address blocking technique
JP3933736B2 (ja) * 1996-12-09 2007-06-20 ローム株式会社 強誘電体コンデンサを備えた半導体装置
JP3919312B2 (ja) * 1996-12-27 2007-05-23 ローム株式会社 強誘電体記憶装置
JP3865447B2 (ja) * 1997-01-10 2007-01-10 富士通株式会社 半導体集積回路
KR100276569B1 (ko) * 1997-06-20 2000-12-15 김영환 강유전메모리장치
JP4030076B2 (ja) * 1997-07-18 2008-01-09 ローム株式会社 処理機能付記憶装置
JP3599970B2 (ja) * 1997-09-18 2004-12-08 株式会社ルネサステクノロジ 半導体記憶装置
JP3196829B2 (ja) 1997-12-26 2001-08-06 日本電気株式会社 強誘電体メモリ装置
KR100268947B1 (ko) * 1998-04-03 2000-10-16 김영환 비휘발성 강유전체 메모리 및 그의 제어회로
WO1999066509A1 (de) * 1998-06-16 1999-12-23 Infineon Technologies Ag Schreib- und leseverfahren für einen ferroelektrischen speicher
KR100333720B1 (ko) * 1998-06-30 2002-06-20 박종섭 강유전체메모리소자의리던던시회로
KR100300873B1 (ko) 1998-12-30 2001-09-06 박종섭 강유전체 커패시터를 사용한 반도체 메모리 장치의 리던던시 회로 및 수리 방법
JP2000215687A (ja) * 1999-01-21 2000-08-04 Fujitsu Ltd 冗長セルを有するメモリデバイス
JP2001036033A (ja) * 1999-07-16 2001-02-09 Mitsubishi Electric Corp 半導体記憶装置
IT1313865B1 (it) * 1999-11-11 2002-09-24 St Microelectronics Srl Apparato per la verifica della ritenzione di dati in memorie nonvolatili.
TW432574B (en) * 2000-01-19 2001-05-01 Yang Wen Kun Wafer level burn in device and method
JP2001351396A (ja) * 2000-06-07 2001-12-21 Nec Corp 半導体メモリ及び半導体メモリ搭載ボード
JP2002008390A (ja) * 2000-06-16 2002-01-11 Fujitsu Ltd 冗長セルを有するメモリデバイス
NO312698B1 (no) * 2000-07-07 2002-06-17 Thin Film Electronics Asa Fremgangsmåte til å utföre skrive- og leseoperasjoner i en passiv matriseminne og apparat for å utföre fremgangsmåten
JP5119563B2 (ja) * 2001-08-03 2013-01-16 日本電気株式会社 不良メモリセル救済回路を有する半導体記憶装置
JP2003132693A (ja) * 2001-10-29 2003-05-09 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2004221473A (ja) * 2003-01-17 2004-08-05 Renesas Technology Corp 半導体記憶装置
JP4125724B2 (ja) * 2003-03-19 2008-07-30 富士通株式会社 半導体記憶装置
US7200050B2 (en) * 2003-05-26 2007-04-03 Semiconductor Energy Laboratory Co., Ltd. Memory unit and semiconductor device
KR100689706B1 (ko) * 2004-11-01 2007-03-08 삼성전자주식회사 반도체 메모리 장치의 리던던시 회로 및 리페어 방법
JP2006302466A (ja) * 2005-04-25 2006-11-02 Elpida Memory Inc 半導体記憶装置
JP2007073141A (ja) * 2005-09-07 2007-03-22 Matsushita Electric Ind Co Ltd 強誘電体メモリ装置
JP2007304847A (ja) * 2006-05-11 2007-11-22 Megachips Lsi Solutions Inc メモリ装置
JP2008204581A (ja) 2007-02-22 2008-09-04 Elpida Memory Inc 不揮発性ｒａｍ
JP5451011B2 (ja) * 2008-08-29 2014-03-26 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置及び情報処理システム
TWI570730B (zh) * 2011-05-20 2017-02-11 半導體能源研究所股份有限公司 半導體裝置
US9153343B2 (en) 2013-11-13 2015-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device having RRAM-based non-volatile storage array
US9761312B1 (en) 2016-03-16 2017-09-12 Micron Technology, Inc. FeRAM-DRAM hybrid memory
US9697913B1 (en) 2016-06-10 2017-07-04 Micron Technology, Inc. Ferroelectric memory cell recovery
US10153020B1 (en) * 2017-06-09 2018-12-11 Micron Technology, Inc. Dual mode ferroelectric memory cell operation
JP6360610B1 (ja) 2017-11-22 2018-07-18 力晶科技股▲ふん▼有限公司 Ｓｒａｍ装置のための冗長回路、ｓｒａｍ装置、及び半導体装置
US11416143B2 (en) 2021-01-07 2022-08-16 Micron Technology, Inc. Runtime selection of memory devices and storage devices in a disaggregated memory system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5297077A (en) * 1990-03-30 1994-03-22 Kabushiki Kaisha Toshiba Memory having ferroelectric capacitors polarized in nonvolatile mode

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0713877B2 (ja) * 1988-10-19 1995-02-15 株式会社東芝 半導体メモリ
JP3110032B2 (ja) * 1990-03-30 2000-11-20 株式会社東芝 強誘電体メモリ
JP3278981B2 (ja) * 1993-06-23 2002-04-30 株式会社日立製作所 半導体メモリ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5297077A (en) * 1990-03-30 1994-03-22 Kabushiki Kaisha Toshiba Memory having ferroelectric capacitors polarized in nonvolatile mode

Also Published As

Publication number Publication date
TW302540B (enExample) 1997-04-11
US5726930A (en) 1998-03-10
KR970003265A (ko) 1997-01-28
JPH098247A (ja) 1997-01-10

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