KR100431483B1 - 반도체 기억 장치 - Google Patents

반도체 기억 장치 Download PDF

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Publication number
KR100431483B1
KR100431483B1 KR10-2001-0085014A KR20010085014A KR100431483B1 KR 100431483 B1 KR100431483 B1 KR 100431483B1 KR 20010085014 A KR20010085014 A KR 20010085014A KR 100431483 B1 KR100431483 B1 KR 100431483B1
Authority
KR
South Korea
Prior art keywords
layer
wiring
transistor
diode
write word
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2001-0085014A
Other languages
English (en)
Korean (ko)
Other versions
KR20020053752A (ko
Inventor
아사오요시아끼
이또히로시
Original Assignee
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 도시바 filed Critical 가부시끼가이샤 도시바
Publication of KR20020053752A publication Critical patent/KR20020053752A/ko
Application granted granted Critical
Publication of KR100431483B1 publication Critical patent/KR100431483B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
KR10-2001-0085014A 2000-12-27 2001-12-26 반도체 기억 장치 Expired - Fee Related KR100431483B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2000-00399223 2000-12-27
JP2000399223 2000-12-27
JP2001373071A JP2002270790A (ja) 2000-12-27 2001-12-06 半導体記憶装置
JPJP-P-2001-00373071 2001-12-06

Publications (2)

Publication Number Publication Date
KR20020053752A KR20020053752A (ko) 2002-07-05
KR100431483B1 true KR100431483B1 (ko) 2004-05-14

Family

ID=26606944

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0085014A Expired - Fee Related KR100431483B1 (ko) 2000-12-27 2001-12-26 반도체 기억 장치

Country Status (5)

Country Link
US (1) US6661689B2 (enExample)
JP (1) JP2002270790A (enExample)
KR (1) KR100431483B1 (enExample)
CN (1) CN1244154C (enExample)
TW (1) TW521426B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4656720B2 (ja) * 2000-09-25 2011-03-23 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP3808799B2 (ja) 2002-05-15 2006-08-16 株式会社東芝 磁気ランダムアクセスメモリ
AU2003243244A1 (en) * 2002-05-16 2003-12-02 Micron Technology, Inc. STACKED 1T-nMEMORY CELL STRUCTURE
US6940748B2 (en) * 2002-05-16 2005-09-06 Micron Technology, Inc. Stacked 1T-nMTJ MRAM structure
US7042749B2 (en) * 2002-05-16 2006-05-09 Micron Technology, Inc. Stacked 1T-nmemory cell structure
US6801450B2 (en) * 2002-05-22 2004-10-05 Hewlett-Packard Development Company, L.P. Memory cell isolation
JP4322481B2 (ja) * 2002-08-12 2009-09-02 株式会社東芝 半導体集積回路装置
JP3906139B2 (ja) * 2002-10-16 2007-04-18 株式会社東芝 磁気ランダムアクセスメモリ
JP4290494B2 (ja) * 2003-07-08 2009-07-08 株式会社ルネサステクノロジ 半導体記憶装置
US7166881B2 (en) * 2003-10-13 2007-01-23 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-sensing level MRAM structures
KR100527536B1 (ko) * 2003-12-24 2005-11-09 주식회사 하이닉스반도체 마그네틱 램
KR100867662B1 (ko) 2004-03-12 2008-11-10 도쿠리쓰교세이호징 가가쿠 기주쓰 신코 기코 자기저항소자, 터널 장벽층 및 자기저항소자의 제조방법
US6946698B1 (en) 2004-04-02 2005-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM device having low-k inter-metal dielectric
US7099176B2 (en) * 2004-04-19 2006-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Non-orthogonal write line structure in MRAM
US7265053B2 (en) * 2004-04-26 2007-09-04 Taiwan Semiconductor Manufacturing Company, Ltd. Trench photolithography rework for removal of photoresist residue
US20060039183A1 (en) * 2004-05-21 2006-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-sensing level MRAM structures
US7221584B2 (en) * 2004-08-13 2007-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM cell having shared configuration
US7170775B2 (en) * 2005-01-06 2007-01-30 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM cell with reduced write current
JP2007317824A (ja) 2006-05-25 2007-12-06 Tdk Corp 磁気抵抗効果素子およびその製造方法、ならびに薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ヘッドアームアセンブリおよび磁気ディスク装置
JP4384137B2 (ja) 2006-06-14 2009-12-16 Ｔｄｋ株式会社 Ｃｐｐ−ｇｍｒヘッド用の磁界検出素子の製造方法、ｃｐｐ−ｇｍｒヘッド用の磁界検出素子、積層体、ウエハ、ヘッドジンバルアセンブリ、およびハードディスク装置
JP5412640B2 (ja) 2008-11-13 2014-02-12 ルネサスエレクトロニクス株式会社 磁気メモリ装置
CN105449099B (zh) * 2015-10-15 2018-04-06 上海磁宇信息科技有限公司 交叉矩阵列式磁性随机存储器及其读写方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3392657B2 (ja) * 1996-09-26 2003-03-31 株式会社東芝 半導体記憶装置
JP4124844B2 (ja) 1997-10-02 2008-07-23 キヤノン株式会社 磁気薄膜メモリ
JP3593472B2 (ja) * 1998-06-30 2004-11-24 株式会社東芝 磁気素子とそれを用いた磁気メモリおよび磁気センサ
JP2000132961A (ja) * 1998-10-23 2000-05-12 Canon Inc 磁気薄膜メモリ、磁気薄膜メモリの読出し方法、及び磁気薄膜メモリの書込み方法
JP3803503B2 (ja) 1999-04-30 2006-08-02 日本電気株式会社 磁気ランダムアクセスメモリ回路
JP2001217398A (ja) 2000-02-03 2001-08-10 Rohm Co Ltd 強磁性トンネル接合素子を用いた記憶装置
DE10020128A1 (de) 2000-04-14 2001-10-18 Infineon Technologies Ag MRAM-Speicher
JP4477199B2 (ja) 2000-06-16 2010-06-09 株式会社ルネサステクノロジ 磁気ランダムアクセスメモリ、磁気ランダムアクセスメモリへのアクセス方法および磁気ランダムアクセスメモリの製造方法
JP2002170377A (ja) * 2000-09-22 2002-06-14 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP4726290B2 (ja) * 2000-10-17 2011-07-20 ルネサスエレクトロニクス株式会社 半導体集積回路
DE10053965A1 (de) * 2000-10-31 2002-06-20 Infineon Technologies Ag Verfahren zur Verhinderung unerwünschter Programmierungen in einer MRAM-Anordnung
JP2002216468A (ja) * 2000-11-08 2002-08-02 Canon Inc 半導体記憶装置
JP4637388B2 (ja) * 2001-03-23 2011-02-23 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP2003016777A (ja) * 2001-06-28 2003-01-17 Mitsubishi Electric Corp 薄膜磁性体記憶装置

Also Published As

Publication number Publication date
US20020080641A1 (en) 2002-06-27
TW521426B (en) 2003-02-21
CN1363955A (zh) 2002-08-14
JP2002270790A (ja) 2002-09-20
US6661689B2 (en) 2003-12-09
KR20020053752A (ko) 2002-07-05
CN1244154C (zh) 2006-03-01

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