KR100420574B1 - 반도체집적회로장치 - Google Patents

반도체집적회로장치 Download PDF

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Publication number
KR100420574B1
KR100420574B1 KR1019940033632A KR19940033632A KR100420574B1 KR 100420574 B1 KR100420574 B1 KR 100420574B1 KR 1019940033632 A KR1019940033632 A KR 1019940033632A KR 19940033632 A KR19940033632 A KR 19940033632A KR 100420574 B1 KR100420574 B1 KR 100420574B1
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KR
South Korea
Prior art keywords
voltage
circuit
mosfet
divided
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940033632A
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English (en)
Korean (ko)
Other versions
KR950021713A (ko
Inventor
구보노쇼오지
구메히토시
Original Assignee
가부시키가이샤 히타치 쪼오 엘.에스.아이.시스템즈
가부시끼가이샤 히다치 세이사꾸쇼
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Publication date
Application filed by 가부시키가이샤 히타치 쪼오 엘.에스.아이.시스템즈, 가부시끼가이샤 히다치 세이사꾸쇼 filed Critical 가부시키가이샤 히타치 쪼오 엘.에스.아이.시스템즈
Publication of KR950021713A publication Critical patent/KR950021713A/ko
Application granted granted Critical
Publication of KR100420574B1 publication Critical patent/KR100420574B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
KR1019940033632A 1993-12-17 1994-12-10 반도체집적회로장치 Expired - Fee Related KR100420574B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-344152 1993-12-17
JP34415293A JP3417630B2 (ja) 1993-12-17 1993-12-17 半導体集積回路装置とフラッシュメモリ及び不揮発性記憶装置

Publications (2)

Publication Number Publication Date
KR950021713A KR950021713A (ko) 1995-07-26
KR100420574B1 true KR100420574B1 (ko) 2004-05-03

Family

ID=18367040

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940033632A Expired - Fee Related KR100420574B1 (ko) 1993-12-17 1994-12-10 반도체집적회로장치

Country Status (7)

Country Link
US (1) US5553021A (enExample)
EP (1) EP0658904B1 (enExample)
JP (1) JP3417630B2 (enExample)
KR (1) KR100420574B1 (enExample)
CN (1) CN1081825C (enExample)
DE (1) DE69428336T2 (enExample)
TW (1) TW287317B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11573584B2 (en) 2021-06-28 2023-02-07 SK Hynix Inc. Voltage generation circuits

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US7023729B2 (en) 1997-01-31 2006-04-04 Renesas Technology Corp. Microcomputer and microprocessor having flash memory operable from single external power supply
KR100480555B1 (ko) * 1997-06-17 2005-06-13 삼성전자주식회사 반도체메모리장치의승압전압클램프회로및승압전압클램프방법
US6023187A (en) * 1997-12-23 2000-02-08 Mitsubishi Semiconductor America, Inc. Voltage pump for integrated circuit and operating method thereof
JPH11219596A (ja) * 1998-02-03 1999-08-10 Nec Corp 半導体装置の電源回路
KR19990073643A (ko) * 1998-03-02 1999-10-05 김영환 전원 제어회로
US5862082A (en) * 1998-04-16 1999-01-19 Xilinx, Inc. Two transistor flash EEprom cell and method of operating same
US6260104B1 (en) * 1998-06-30 2001-07-10 Micron Technology, Inc. Multiplexing of trim outputs on a trim bus to reduce die size
US6781439B2 (en) * 1998-07-30 2004-08-24 Kabushiki Kaisha Toshiba Memory device pump circuit with two booster circuits
JP3430050B2 (ja) * 1998-12-28 2003-07-28 日本電気株式会社 半導体記憶装置およびその駆動方法
FR2792761B1 (fr) * 1999-04-21 2003-05-23 St Microelectronics Sa Dispositif de programmation d'une memoire non volatile electriquement programmable
WO2001031769A1 (en) 1999-10-28 2001-05-03 Koninklijke Philips Electronics N.V. Device for providing a supply voltage
US6226200B1 (en) * 1999-11-17 2001-05-01 Motorola Inc. In-circuit memory array bit cell threshold voltage distribution measurement
DE10001648C2 (de) 2000-01-17 2002-03-14 Infineon Technologies Ag Integrierte Schaltung mit mehreren Teilschaltungen
JP4430801B2 (ja) * 2000-08-03 2010-03-10 株式会社アドバンテスト 半導体メモリ試験装置
DE10055920C2 (de) 2000-11-10 2003-03-27 Infineon Technologies Ag Integrierter Speicher mit einer Spannungsregelungsschaltung
KR100361658B1 (ko) * 2000-11-30 2002-11-22 삼성전자 주식회사 반도체 메모리 장치 및 이 장치의 전압 레벨 조절방법
US6804502B2 (en) * 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
JP2004220711A (ja) * 2003-01-16 2004-08-05 Nec Micro Systems Ltd 半導体集積回路装置
GB0301077D0 (en) * 2003-01-17 2003-02-19 Koninkl Philips Electronics Nv A charge pump circuit
US7719343B2 (en) 2003-09-08 2010-05-18 Peregrine Semiconductor Corporation Low noise charge pump method and apparatus
JP2005222580A (ja) * 2004-02-03 2005-08-18 Renesas Technology Corp 半導体記憶装置
JP2005234935A (ja) 2004-02-20 2005-09-02 Renesas Technology Corp 情報記憶装置
JP3889011B2 (ja) 2004-03-26 2007-03-07 ローム株式会社 昇圧電源装置、及びそれを用いた携帯機器
JP4659826B2 (ja) 2004-06-23 2011-03-30 ペレグリン セミコンダクター コーポレーション Ｒｆフロントエンド集積回路
US7110298B2 (en) * 2004-07-20 2006-09-19 Sandisk Corporation Non-volatile system with program time control
US7764717B1 (en) 2005-05-06 2010-07-27 Oracle America, Inc. Rapid datarate estimation for a data stream multiplexer
US7333468B1 (en) 2005-05-16 2008-02-19 Sun Microsystems, Inc. Digital phase locked loops for packet stream rate matching and restamping
US7738498B1 (en) 2005-08-09 2010-06-15 Oracle America, Inc. Sharing a digital phase-locked loop across multiple packet streams
KR100757411B1 (ko) * 2006-02-03 2007-09-11 삼성전자주식회사 옵션 퓨즈 회로를 이용한 반도체 메모리 장치의 전압재설정 회로 및 그 방법
US7960772B2 (en) 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
US8994452B2 (en) 2008-07-18 2015-03-31 Peregrine Semiconductor Corporation Low-noise high efficiency bias generation circuits and method
US9660590B2 (en) 2008-07-18 2017-05-23 Peregrine Semiconductor Corporation Low-noise high efficiency bias generation circuits and method
CN101656108B (zh) * 2008-08-19 2012-06-27 杭州士兰微电子股份有限公司 电源供电电路及应用方法
JP2010169730A (ja) * 2009-01-20 2010-08-05 Renesas Electronics Corp 表示装置の駆動回路
CN102298434B (zh) * 2010-06-23 2015-07-29 上海华虹宏力半导体制造有限公司 一种片上系统
JP5596143B2 (ja) * 2010-06-29 2014-09-24 パナソニック株式会社 不揮発性記憶システム、メモリシステム用の電源回路、フラッシュメモリ、フラッシュメモリコントローラ、および不揮発性半導体記憶装置
US8686787B2 (en) 2011-05-11 2014-04-01 Peregrine Semiconductor Corporation High voltage ring pump with inverter stages and voltage boosting stages
US9413362B2 (en) 2011-01-18 2016-08-09 Peregrine Semiconductor Corporation Differential charge pump
US8862926B2 (en) 2011-08-16 2014-10-14 Apple Inc. Hardware controlled PLL switching
US9081517B2 (en) 2011-08-31 2015-07-14 Apple Inc. Hardware-based automatic clock gating
US20150236748A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Devices and Methods for Duplexer Loss Reduction
WO2014169401A1 (en) * 2013-04-18 2014-10-23 Micron Technology, Inc. Voltage control in integrated circuit devices
KR20140145814A (ko) * 2013-06-14 2014-12-24 에스케이하이닉스 주식회사 기준전압 생성기 및 그를 포함하는 저전압용 내부전원 생성장치
JP6846368B2 (ja) * 2018-02-05 2021-03-24 ルネサスエレクトロニクス株式会社 半導体装置
WO2022168403A1 (ja) * 2021-02-03 2022-08-11 ローム株式会社 電源装置

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US4628487A (en) * 1984-08-14 1986-12-09 Texas Instruments Incorporated Dual slope, feedback controlled, EEPROM programming
JPS61166159A (ja) * 1985-01-18 1986-07-26 Mitsubishi Electric Corp 半導体装置
IT1225608B (it) * 1988-07-06 1990-11-22 Sgs Thomson Microelectronics Regolazione della tensione prodotta da un moltiplicatore di tensione.
JPH04123471A (ja) * 1990-09-14 1992-04-23 Oki Electric Ind Co Ltd 半導体記憶装置のデータ書込みおよび消去方法
KR930009148B1 (ko) * 1990-09-29 1993-09-23 삼성전자 주식회사 전원전압 조정회로

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11573584B2 (en) 2021-06-28 2023-02-07 SK Hynix Inc. Voltage generation circuits

Also Published As

Publication number Publication date
KR950021713A (ko) 1995-07-26
DE69428336D1 (de) 2001-10-25
EP0658904B1 (en) 2001-09-19
US5553021A (en) 1996-09-03
EP0658904A3 (en) 1996-06-05
TW287317B (enExample) 1996-10-01
DE69428336T2 (de) 2002-07-18
CN1081825C (zh) 2002-03-27
EP0658904A2 (en) 1995-06-21
JP3417630B2 (ja) 2003-06-16
JPH07176698A (ja) 1995-07-14
CN1120243A (zh) 1996-04-10

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