CN1081825C - 半导体集成电路器件 - Google Patents

半导体集成电路器件 Download PDF

Info

Publication number
CN1081825C
CN1081825C CN94119526A CN94119526A CN1081825C CN 1081825 C CN1081825 C CN 1081825C CN 94119526 A CN94119526 A CN 94119526A CN 94119526 A CN94119526 A CN 94119526A CN 1081825 C CN1081825 C CN 1081825C
Authority
CN
China
Prior art keywords
voltage
circuit
reference voltage
mosfet
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN94119526A
Other languages
English (en)
Chinese (zh)
Other versions
CN1120243A (zh
Inventor
久保野昌次
久米均
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Solutions Technology Ltd
Original Assignee
Hitachi ULSI Engineering Corp
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi ULSI Engineering Corp, Hitachi Ltd filed Critical Hitachi ULSI Engineering Corp
Publication of CN1120243A publication Critical patent/CN1120243A/zh
Application granted granted Critical
Publication of CN1081825C publication Critical patent/CN1081825C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
CN94119526A 1993-12-17 1994-12-16 半导体集成电路器件 Expired - Fee Related CN1081825C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP344152/93 1993-12-17
JP34415293A JP3417630B2 (ja) 1993-12-17 1993-12-17 半導体集積回路装置とフラッシュメモリ及び不揮発性記憶装置

Publications (2)

Publication Number Publication Date
CN1120243A CN1120243A (zh) 1996-04-10
CN1081825C true CN1081825C (zh) 2002-03-27

Family

ID=18367040

Family Applications (1)

Application Number Title Priority Date Filing Date
CN94119526A Expired - Fee Related CN1081825C (zh) 1993-12-17 1994-12-16 半导体集成电路器件

Country Status (7)

Country Link
US (1) US5553021A (enExample)
EP (1) EP0658904B1 (enExample)
JP (1) JP3417630B2 (enExample)
KR (1) KR100420574B1 (enExample)
CN (1) CN1081825C (enExample)
DE (1) DE69428336T2 (enExample)
TW (1) TW287317B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1739230B (zh) * 2003-01-17 2010-06-23 统宝香港控股有限公司 电荷泵电路

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3587542B2 (ja) * 1992-06-19 2004-11-10 インテル・コーポレーション 電力消費を節減する方法および装置
KR19980064091A (ko) * 1996-12-13 1998-10-07 윌리엄비.켐플러 신뢰성과 동작성이 개선된 채널 핫 전자 프로그램 방식 메모리디바이스
US7023729B2 (en) 1997-01-31 2006-04-04 Renesas Technology Corp. Microcomputer and microprocessor having flash memory operable from single external power supply
KR100480555B1 (ko) * 1997-06-17 2005-06-13 삼성전자주식회사 반도체메모리장치의승압전압클램프회로및승압전압클램프방법
US6023187A (en) * 1997-12-23 2000-02-08 Mitsubishi Semiconductor America, Inc. Voltage pump for integrated circuit and operating method thereof
JPH11219596A (ja) * 1998-02-03 1999-08-10 Nec Corp 半導体装置の電源回路
KR19990073643A (ko) * 1998-03-02 1999-10-05 김영환 전원 제어회로
US5862082A (en) * 1998-04-16 1999-01-19 Xilinx, Inc. Two transistor flash EEprom cell and method of operating same
US6260104B1 (en) * 1998-06-30 2001-07-10 Micron Technology, Inc. Multiplexing of trim outputs on a trim bus to reduce die size
US6781439B2 (en) * 1998-07-30 2004-08-24 Kabushiki Kaisha Toshiba Memory device pump circuit with two booster circuits
JP3430050B2 (ja) * 1998-12-28 2003-07-28 日本電気株式会社 半導体記憶装置およびその駆動方法
FR2792761B1 (fr) * 1999-04-21 2003-05-23 St Microelectronics Sa Dispositif de programmation d'une memoire non volatile electriquement programmable
WO2001031769A1 (en) 1999-10-28 2001-05-03 Koninklijke Philips Electronics N.V. Device for providing a supply voltage
US6226200B1 (en) * 1999-11-17 2001-05-01 Motorola Inc. In-circuit memory array bit cell threshold voltage distribution measurement
DE10001648C2 (de) 2000-01-17 2002-03-14 Infineon Technologies Ag Integrierte Schaltung mit mehreren Teilschaltungen
JP4430801B2 (ja) * 2000-08-03 2010-03-10 株式会社アドバンテスト 半導体メモリ試験装置
DE10055920C2 (de) 2000-11-10 2003-03-27 Infineon Technologies Ag Integrierter Speicher mit einer Spannungsregelungsschaltung
KR100361658B1 (ko) * 2000-11-30 2002-11-22 삼성전자 주식회사 반도체 메모리 장치 및 이 장치의 전압 레벨 조절방법
US6804502B2 (en) * 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
JP2004220711A (ja) * 2003-01-16 2004-08-05 Nec Micro Systems Ltd 半導体集積回路装置
US7719343B2 (en) 2003-09-08 2010-05-18 Peregrine Semiconductor Corporation Low noise charge pump method and apparatus
JP2005222580A (ja) * 2004-02-03 2005-08-18 Renesas Technology Corp 半導体記憶装置
JP2005234935A (ja) 2004-02-20 2005-09-02 Renesas Technology Corp 情報記憶装置
JP3889011B2 (ja) 2004-03-26 2007-03-07 ローム株式会社 昇圧電源装置、及びそれを用いた携帯機器
JP4659826B2 (ja) 2004-06-23 2011-03-30 ペレグリン セミコンダクター コーポレーション Ｒｆフロントエンド集積回路
US7110298B2 (en) * 2004-07-20 2006-09-19 Sandisk Corporation Non-volatile system with program time control
US7764717B1 (en) 2005-05-06 2010-07-27 Oracle America, Inc. Rapid datarate estimation for a data stream multiplexer
US7333468B1 (en) 2005-05-16 2008-02-19 Sun Microsystems, Inc. Digital phase locked loops for packet stream rate matching and restamping
US7738498B1 (en) 2005-08-09 2010-06-15 Oracle America, Inc. Sharing a digital phase-locked loop across multiple packet streams
KR100757411B1 (ko) * 2006-02-03 2007-09-11 삼성전자주식회사 옵션 퓨즈 회로를 이용한 반도체 메모리 장치의 전압재설정 회로 및 그 방법
US7960772B2 (en) 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
US8994452B2 (en) 2008-07-18 2015-03-31 Peregrine Semiconductor Corporation Low-noise high efficiency bias generation circuits and method
US9660590B2 (en) 2008-07-18 2017-05-23 Peregrine Semiconductor Corporation Low-noise high efficiency bias generation circuits and method
CN101656108B (zh) * 2008-08-19 2012-06-27 杭州士兰微电子股份有限公司 电源供电电路及应用方法
JP2010169730A (ja) * 2009-01-20 2010-08-05 Renesas Electronics Corp 表示装置の駆動回路
CN102298434B (zh) * 2010-06-23 2015-07-29 上海华虹宏力半导体制造有限公司 一种片上系统
JP5596143B2 (ja) * 2010-06-29 2014-09-24 パナソニック株式会社 不揮発性記憶システム、メモリシステム用の電源回路、フラッシュメモリ、フラッシュメモリコントローラ、および不揮発性半導体記憶装置
US8686787B2 (en) 2011-05-11 2014-04-01 Peregrine Semiconductor Corporation High voltage ring pump with inverter stages and voltage boosting stages
US9413362B2 (en) 2011-01-18 2016-08-09 Peregrine Semiconductor Corporation Differential charge pump
US8862926B2 (en) 2011-08-16 2014-10-14 Apple Inc. Hardware controlled PLL switching
US9081517B2 (en) 2011-08-31 2015-07-14 Apple Inc. Hardware-based automatic clock gating
US20150236748A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Devices and Methods for Duplexer Loss Reduction
WO2014169401A1 (en) * 2013-04-18 2014-10-23 Micron Technology, Inc. Voltage control in integrated circuit devices
KR20140145814A (ko) * 2013-06-14 2014-12-24 에스케이하이닉스 주식회사 기준전압 생성기 및 그를 포함하는 저전압용 내부전원 생성장치
JP6846368B2 (ja) * 2018-02-05 2021-03-24 ルネサスエレクトロニクス株式会社 半導体装置
WO2022168403A1 (ja) * 2021-02-03 2022-08-11 ローム株式会社 電源装置
KR20230001463A (ko) 2021-06-28 2023-01-04 에스케이하이닉스 주식회사 전압생성회로

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5267209A (en) * 1990-09-14 1993-11-30 Oki Electric Industry Co., Ltd. EEPROM programming method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4628487A (en) * 1984-08-14 1986-12-09 Texas Instruments Incorporated Dual slope, feedback controlled, EEPROM programming
JPS61166159A (ja) * 1985-01-18 1986-07-26 Mitsubishi Electric Corp 半導体装置
IT1225608B (it) * 1988-07-06 1990-11-22 Sgs Thomson Microelectronics Regolazione della tensione prodotta da un moltiplicatore di tensione.
KR930009148B1 (ko) * 1990-09-29 1993-09-23 삼성전자 주식회사 전원전압 조정회로

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5267209A (en) * 1990-09-14 1993-11-30 Oki Electric Industry Co., Ltd. EEPROM programming method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1739230B (zh) * 2003-01-17 2010-06-23 统宝香港控股有限公司 电荷泵电路

Also Published As

Publication number Publication date
KR950021713A (ko) 1995-07-26
DE69428336D1 (de) 2001-10-25
EP0658904B1 (en) 2001-09-19
US5553021A (en) 1996-09-03
KR100420574B1 (ko) 2004-05-03
EP0658904A3 (en) 1996-06-05
TW287317B (enExample) 1996-10-01
DE69428336T2 (de) 2002-07-18
EP0658904A2 (en) 1995-06-21
JP3417630B2 (ja) 2003-06-16
JPH07176698A (ja) 1995-07-14
CN1120243A (zh) 1996-04-10

Similar Documents

Publication Publication Date Title
CN1081825C (zh) 半导体集成电路器件
JP2831914B2 (ja) 半導体集積回路装置
CN1039608C (zh) 非易失型半导体存贮器
JP3877426B2 (ja) チャージポンピング回路及び該チャージポンピング回路を持つ不揮発性メモリ装置
JP3737525B2 (ja) 半導体記憶装置
US5513146A (en) Nonvolatile semiconductor memory device having a row decoder supplying a negative potential to word lines during erase mode
CN1196137C (zh) 用于编程非易失性存储器的位线设置和放电电路
US5917757A (en) Flash memory with high speed erasing structure using thin oxide semiconductor devices
JPH07122998B2 (ja) 半導体メモリ素子の高電圧発生回路
US6233177B1 (en) Bitline latch switching circuit for floating gate memory device requiring zero volt programming voltage
US8471537B2 (en) Low power high voltage regulator for non-volatile memory device
JP4130717B2 (ja) 負の高電圧を放電させるための回路を備えたフラッシュメモリ装置
TWI696999B (zh) 位準移位器與半導體裝置
US5914896A (en) Flash memory with high speed erasing structure using thin oxide and thick oxide semiconductor devices
US7154789B2 (en) High-voltage generator circuit and semiconductor memory device including the same
CN1230751A (zh) 半导体存储器件
US20060274579A1 (en) Multi-voltage generator generating program voltage, read voltage and high voltage in response to operating mode of flash memory device
US6865110B1 (en) Program voltage generation circuit for stably programming flash memory cell and method of programming flash memory cell
JP2004055012A (ja) 不揮発性半導体メモリ
KR100587683B1 (ko) 불휘발성 반도체 메모리 장치에서의 고전압 발생회로
CN1118082A (zh) 负电荷泵的输出电压控制电路
CN117012243A (zh) 负压放电电路
US7126862B2 (en) Decoder for memory device
KR100206188B1 (ko) 불휘발성 반도체 메모리 장치의 음의 고전압 발생회로
US7372308B2 (en) High-voltage generation circuits and nonvolatile semiconductor memory device with improved high-voltage efficiency and methods of operating

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20020327

Termination date: 20131216