KR100345420B1 - 플라즈마처리장치 - Google Patents

플라즈마처리장치 Download PDF

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Publication number
KR100345420B1
KR100345420B1 KR1019960020284A KR19960020284A KR100345420B1 KR 100345420 B1 KR100345420 B1 KR 100345420B1 KR 1019960020284 A KR1019960020284 A KR 1019960020284A KR 19960020284 A KR19960020284 A KR 19960020284A KR 100345420 B1 KR100345420 B1 KR 100345420B1
Authority
KR
South Korea
Prior art keywords
insulating member
plasma
electrode
lower electrode
upper insulating
Prior art date
Application number
KR1019960020284A
Other languages
English (en)
Korean (ko)
Other versions
KR970003610A (ko
Inventor
아끼라 고시이시
마사히로 오가사와라
게이조 히로세
가즈야 나가세끼
리끼 도모요리
마코토 아오키
Original Assignee
동경 엘렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP07166866A external-priority patent/JP3121524B2/ja
Priority claimed from JP7169209A external-priority patent/JPH08339895A/ja
Priority claimed from JP17137095A external-priority patent/JP3162955B2/ja
Application filed by 동경 엘렉트론 주식회사 filed Critical 동경 엘렉트론 주식회사
Publication of KR970003610A publication Critical patent/KR970003610A/ko
Application granted granted Critical
Publication of KR100345420B1 publication Critical patent/KR100345420B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1019960020284A 1995-06-07 1996-06-07 플라즈마처리장치 KR100345420B1 (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP07166866A JP3121524B2 (ja) 1995-06-07 1995-06-07 エッチング装置
JP95-166866 1995-06-07
JP16806795 1995-06-08
JP95-168067 1995-06-08
JP95-169209 1995-06-12
JP7169209A JPH08339895A (ja) 1995-06-12 1995-06-12 プラズマ処理装置
JP95-171370 1995-06-13
JP17137095A JP3162955B2 (ja) 1995-06-13 1995-06-13 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR970003610A KR970003610A (ko) 1997-01-28
KR100345420B1 true KR100345420B1 (ko) 2002-11-21

Family

ID=27474095

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960020284A KR100345420B1 (ko) 1995-06-07 1996-06-07 플라즈마처리장치

Country Status (3)

Country Link
US (1) US5919332A (US20030180458A1-20030925-M00011.png)
KR (1) KR100345420B1 (US20030180458A1-20030925-M00011.png)
TW (2) TW323387B (US20030180458A1-20030925-M00011.png)

Cited By (6)

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KR100699681B1 (ko) 2005-12-28 2007-03-23 동부일렉트로닉스 주식회사 반도체 제조 장치
WO2008088668A1 (en) * 2007-01-17 2008-07-24 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled rf plasma reactor
KR101455789B1 (ko) * 2013-08-06 2014-11-03 주식회사 알지비하이텍 기판처리장치의 서셉터 및 그를 가지는 기판처리장치
KR20160002544A (ko) * 2014-06-30 2016-01-08 세메스 주식회사 기판 처리 장치
KR101591128B1 (ko) * 2008-12-19 2016-02-02 램 리써치 코포레이션 조정가능 갭 플라즈마 챔버에서의 듀얼 컨파인먼트 및 초고압을 위한 방법 및 장치
KR20200109718A (ko) * 2019-03-14 2020-09-23 세메스 주식회사 기판 처리 장치 및 이의 에지 링

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