CN1909760B - 真空反应室及其处理方法 - Google Patents
真空反应室及其处理方法 Download PDFInfo
- Publication number
- CN1909760B CN1909760B CN200510028573.6A CN200510028573A CN1909760B CN 1909760 B CN1909760 B CN 1909760B CN 200510028573 A CN200510028573 A CN 200510028573A CN 1909760 B CN1909760 B CN 1909760B
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- cavity
- reaction chamber
- vacuum reaction
- top electrode
- regulating element
- Prior art date
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- 238000003672 processing method Methods 0.000 title claims description 32
- 239000003989 dielectric material Substances 0.000 claims abstract description 35
- 239000007788 liquid Substances 0.000 claims abstract description 26
- 230000001105 regulatory effect Effects 0.000 claims description 69
- 239000004065 semiconductor Substances 0.000 claims description 39
- 230000005684 electric field Effects 0.000 claims description 32
- 239000007787 solid Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 239000012530 fluid Substances 0.000 claims description 11
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 6
- 239000000945 filler Substances 0.000 claims description 6
- 238000004088 simulation Methods 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 21
- 230000003071 parasitic effect Effects 0.000 description 13
- 238000009832 plasma treatment Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49014—Superconductor
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (45)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200510028573.6A CN1909760B (zh) | 2005-08-05 | 2005-08-05 | 真空反应室及其处理方法 |
US11/440,738 US7682483B2 (en) | 2005-08-05 | 2006-05-24 | Vacuum processing chamber and method of processing a semiconductor work piece |
JP2006213903A JP2007048748A (ja) | 2005-08-05 | 2006-08-04 | 真空反応室及びその処理方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200510028573.6A CN1909760B (zh) | 2005-08-05 | 2005-08-05 | 真空反应室及其处理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1909760A CN1909760A (zh) | 2007-02-07 |
CN1909760B true CN1909760B (zh) | 2010-07-21 |
Family
ID=37700721
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200510028573.6A Active CN1909760B (zh) | 2005-08-05 | 2005-08-05 | 真空反应室及其处理方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7682483B2 (zh) |
JP (1) | JP2007048748A (zh) |
CN (1) | CN1909760B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5223377B2 (ja) | 2008-02-29 | 2013-06-26 | 東京エレクトロン株式会社 | プラズマ処理装置用の電極、プラズマ処理装置及びプラズマ処理方法 |
CN101643891B (zh) * | 2008-08-05 | 2011-07-27 | 吉和林 | 用pvd法进行纳米级通孔填充铝的装置和工艺方法 |
US10225919B2 (en) * | 2011-06-30 | 2019-03-05 | Aes Global Holdings, Pte. Ltd | Projected plasma source |
CN103187234B (zh) * | 2011-12-30 | 2016-03-16 | 中微半导体设备(上海)有限公司 | 一种用于等离子体处理装置的可调节约束装置 |
CN105810546B (zh) * | 2014-12-30 | 2017-10-13 | 中微半导体设备(上海)有限公司 | 一种介电参数连续可调的等离子处理器 |
JP2018129224A (ja) * | 2017-02-09 | 2018-08-16 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US10395896B2 (en) | 2017-03-03 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation |
CN108322991A (zh) * | 2018-01-08 | 2018-07-24 | 青海师范大学 | 一种半封闭常压双频大面积辉光放电实验装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1540738A (zh) * | 2003-04-24 | 2004-10-27 | ���������ƴ���ʽ���� | 等离子体处理装置、聚焦环和基座 |
US6878249B2 (en) * | 2000-06-16 | 2005-04-12 | Anelva Corporation | High frequency sputtering device |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0344028A (ja) * | 1989-07-11 | 1991-02-25 | Matsushita Electron Corp | プラズマエッチング装置 |
DE4022708A1 (de) * | 1990-07-17 | 1992-04-02 | Balzers Hochvakuum | Aetz- oder beschichtungsanlagen |
JPH06120140A (ja) * | 1992-10-08 | 1994-04-28 | Hitachi Ltd | 半導体製造方法および装置 |
JP3222620B2 (ja) * | 1993-05-28 | 2001-10-29 | 株式会社東芝 | 放電処理装置 |
TW323387B (zh) * | 1995-06-07 | 1997-12-21 | Tokyo Electron Co Ltd | |
JP4130255B2 (ja) * | 1998-04-08 | 2008-08-06 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
TW469534B (en) * | 1999-02-23 | 2001-12-21 | Matsushita Electric Ind Co Ltd | Plasma processing method and apparatus |
TW516113B (en) * | 1999-04-14 | 2003-01-01 | Hitachi Ltd | Plasma processing device and plasma processing method |
JP4467667B2 (ja) * | 1999-05-21 | 2010-05-26 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP3374796B2 (ja) * | 1999-08-06 | 2003-02-10 | 松下電器産業株式会社 | プラズマ処理方法及び装置 |
US6872281B1 (en) * | 2000-09-28 | 2005-03-29 | Lam Research Corporation | Chamber configuration for confining a plasma |
JP4686867B2 (ja) * | 2001-02-20 | 2011-05-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP3964272B2 (ja) * | 2002-06-28 | 2007-08-22 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理装置用シールドリング |
JP2004273312A (ja) * | 2003-03-10 | 2004-09-30 | Sekisui Chem Co Ltd | プラズマ発生装置、プラズマ処理装置およびこれを用いたプラズマ発生方法 |
JP2006114614A (ja) * | 2004-10-13 | 2006-04-27 | Canon Anelva Corp | プラズマ処理装置および方法 |
-
2005
- 2005-08-05 CN CN200510028573.6A patent/CN1909760B/zh active Active
-
2006
- 2006-05-24 US US11/440,738 patent/US7682483B2/en active Active
- 2006-08-04 JP JP2006213903A patent/JP2007048748A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6878249B2 (en) * | 2000-06-16 | 2005-04-12 | Anelva Corporation | High frequency sputtering device |
CN1540738A (zh) * | 2003-04-24 | 2004-10-27 | ���������ƴ���ʽ���� | 等离子体处理装置、聚焦环和基座 |
Non-Patent Citations (1)
Title |
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同上. |
Also Published As
Publication number | Publication date |
---|---|
CN1909760A (zh) | 2007-02-07 |
JP2007048748A (ja) | 2007-02-22 |
US7682483B2 (en) | 2010-03-23 |
US20070039165A1 (en) | 2007-02-22 |
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Vacuum reaction chamber and processing method Effective date of registration: 20110725 Granted publication date: 20100721 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20170809 Granted publication date: 20100721 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |