KR100329243B1 - 집적 회로 장치 - Google Patents

집적 회로 장치 Download PDF

Info

Publication number
KR100329243B1
KR100329243B1 KR1019990017075A KR19990017075A KR100329243B1 KR 100329243 B1 KR100329243 B1 KR 100329243B1 KR 1019990017075 A KR1019990017075 A KR 1019990017075A KR 19990017075 A KR19990017075 A KR 19990017075A KR 100329243 B1 KR100329243 B1 KR 100329243B1
Authority
KR
South Korea
Prior art keywords
clock signal
signal
circuit
clock
internal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019990017075A
Other languages
English (en)
Korean (ko)
Other versions
KR20000005652A (ko
Inventor
야다마사히로
도미타히로요시
Original Assignee
아끼구사 나오유끼
후지쯔 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아끼구사 나오유끼, 후지쯔 가부시끼가이샤 filed Critical 아끼구사 나오유끼
Publication of KR20000005652A publication Critical patent/KR20000005652A/ko
Application granted granted Critical
Publication of KR100329243B1 publication Critical patent/KR100329243B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR1019990017075A 1998-06-30 1999-05-13 집적 회로 장치 Expired - Lifetime KR100329243B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP98-184483 1998-06-30
JP18448398A JP4178225B2 (ja) 1998-06-30 1998-06-30 集積回路装置

Publications (2)

Publication Number Publication Date
KR20000005652A KR20000005652A (ko) 2000-01-25
KR100329243B1 true KR100329243B1 (ko) 2002-03-18

Family

ID=16153974

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990017075A Expired - Lifetime KR100329243B1 (ko) 1998-06-30 1999-05-13 집적 회로 장치

Country Status (3)

Country Link
US (1) US6266294B1 (enExample)
JP (1) JP4178225B2 (enExample)
KR (1) KR100329243B1 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4489231B2 (ja) * 2000-02-23 2010-06-23 富士通マイクロエレクトロニクス株式会社 遅延時間調整方法と遅延時間調整回路
JP4649081B2 (ja) * 2000-10-02 2011-03-09 キヤノン株式会社 周辺機器、その制御方法、プログラムおよび記憶媒体
US6480439B2 (en) * 2000-10-03 2002-11-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US6898683B2 (en) * 2000-12-19 2005-05-24 Fujitsu Limited Clock synchronized dynamic memory and clock synchronized integrated circuit
KR100413758B1 (ko) * 2001-03-26 2003-12-31 삼성전자주식회사 지연 동기 루프를 구비하는 반도체 메모리 장치
KR100422572B1 (ko) * 2001-06-30 2004-03-12 주식회사 하이닉스반도체 레지스터 제어 지연고정루프 및 그를 구비한 반도체 소자
US6832327B1 (en) * 2001-10-02 2004-12-14 Advanced Micro Devices, Inc. Apparatus and method for providing an external clock from a circuit in sleep mode in a processor-based system
US6678205B2 (en) * 2001-12-26 2004-01-13 Micron Technology, Inc. Multi-mode synchronous memory device and method of operating and testing same
JP2003228982A (ja) 2002-01-29 2003-08-15 Hitachi Ltd 半導体集積回路装置
KR100470995B1 (ko) * 2002-04-23 2005-03-08 삼성전자주식회사 클럭수신 동기회로를 갖는 멀티클럭 도메인 데이터 입력처리장치 및 그에 따른 클럭신호 인가방법
US6765433B1 (en) * 2003-03-20 2004-07-20 Atmel Corporation Low power implementation for input signals of integrated circuits
KR100560297B1 (ko) * 2003-10-29 2006-03-10 주식회사 하이닉스반도체 지연고정루프용 전원 공급 회로를 구비한 반도체 소자
KR100540487B1 (ko) * 2003-10-31 2006-01-10 주식회사 하이닉스반도체 데이터 출력제어회로
KR100571651B1 (ko) * 2003-12-29 2006-04-17 주식회사 하이닉스반도체 파워다운 모드의 안정적인 탈출을 위한 제어회로
KR100808052B1 (ko) * 2005-09-28 2008-03-07 주식회사 하이닉스반도체 반도체 메모리 장치
US7429871B2 (en) * 2005-09-29 2008-09-30 Hynix Semiconductor Inc. Device for controlling on die termination
JP4524662B2 (ja) * 2005-10-21 2010-08-18 エルピーダメモリ株式会社 半導体メモリチップ
KR100702766B1 (ko) * 2005-12-07 2007-04-03 주식회사 하이닉스반도체 안정적인 ｄｌｌ용 내부 전압을 생성하는 내부 전압발생기와 이를 포함하는 내부 클록 발생기 및 그 내부 전압발생 방법
KR100680975B1 (ko) * 2006-01-13 2007-02-09 주식회사 하이닉스반도체 파워다운 모드 제어 회로
KR100776906B1 (ko) 2006-02-16 2007-11-19 주식회사 하이닉스반도체 파워다운 모드 동안 주기적으로 락킹 동작을 실행하는기능을 가지는 ｄｌｌ 및 그 락킹 동작 방법
US7613064B1 (en) * 2006-12-19 2009-11-03 Nvidia Corporation Power management modes for memory devices
KR100896182B1 (ko) * 2007-02-22 2009-05-12 삼성전자주식회사 지연 동기 회로의 파워 다운 모드를 제어하는 장치 및 그제어 방법
US20080228950A1 (en) * 2007-03-14 2008-09-18 Qimonda North America Corp. Memory power down mode exit method and system
JP2009140322A (ja) * 2007-12-07 2009-06-25 Elpida Memory Inc タイミング制御回路および半導体記憶装置
KR100902058B1 (ko) * 2008-01-07 2009-06-09 주식회사 하이닉스반도체 반도체 집적 회로 및 그의 제어 방법
US7728638B2 (en) * 2008-04-25 2010-06-01 Qimonda North America Corp. Electronic system that adjusts DLL lock state acquisition time
JP5654196B2 (ja) * 2008-05-22 2015-01-14 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． Ｄｌｌ回路ユニット及び半導体メモリ
KR100996176B1 (ko) 2008-12-09 2010-11-24 주식회사 하이닉스반도체 반도체 메모리 장치 및 그에 구비되는 지연 고정 루프의 제어 방법
KR101497777B1 (ko) 2009-12-30 2015-03-02 마이크론 테크놀로지, 인크. 클록 입력 버퍼 제어
KR101175244B1 (ko) 2010-04-29 2012-08-22 에스케이하이닉스 주식회사 반도체장치 및 이의 동작방법, 메모리 시스템
KR101136985B1 (ko) 2010-08-18 2012-04-19 에스케이하이닉스 주식회사 반도체 메모리 장치의 데이터 출력 회로
US20140115358A1 (en) * 2011-05-27 2014-04-24 Freescale Semiconductor, Inc. Integrated circuit device and method for controlling an operating mode of an on-die memory
JP2015035241A (ja) * 2013-08-09 2015-02-19 マイクロン テクノロジー， インク． 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3429977B2 (ja) * 1997-05-16 2003-07-28 富士通株式会社 スキュー低減回路及び半導体装置
JP3832932B2 (ja) * 1997-07-11 2006-10-11 富士通株式会社 半導体集積回路および半導体集積回路システム
JP4031859B2 (ja) * 1998-02-03 2008-01-09 富士通株式会社 半導体装置

Also Published As

Publication number Publication date
JP2000021165A (ja) 2000-01-21
KR20000005652A (ko) 2000-01-25
JP4178225B2 (ja) 2008-11-12
US6266294B1 (en) 2001-07-24

Similar Documents

Publication Publication Date Title
KR100329243B1 (ko) 집적 회로 장치
US6768690B2 (en) Register controlled DLL for reducing current consumption
US7196966B2 (en) On die termination mode transfer circuit in semiconductor memory device and its method
US7843745B2 (en) Delay locked operation in semiconductor memory device
JP3549751B2 (ja) 半導体集積回路装置
JP3717289B2 (ja) 集積回路装置
US7489172B2 (en) DLL driver control circuit
US7340632B2 (en) Domain crossing device
KR20020075572A (ko) 지연동기루프의 전류소모를 감소시키기 위한스탠바이모드를 구비하는 반도체 메모리 장치
KR100510490B1 (ko) 부분적으로 제어되는 지연 동기 루프를 구비하는 반도체메모리 장치
US6519188B2 (en) Circuit and method for controlling buffers in semiconductor memory device
KR100486922B1 (ko) 반도체 기억 장치
KR100507874B1 (ko) 클럭 동기화 회로를 구비한 동기식 반도체 메모리 장치 및클럭 동기화 회로의 클럭 트리 온/오프 제어회로
USRE46141E1 (en) Semiconductor device and timing control method for the same
JP3880206B2 (ja) 集積回路装置
USRE44590E1 (en) Clock control device for toggling an internal clock of a synchronous DRAM for reduced power consumption
KR20060054575A (ko) 반도체 메모리 장치의 명령 디코더
JP3868126B2 (ja) 集積回路装置
JP2002135237A (ja) 半導体装置
KR101026378B1 (ko) 지연고정루프회로의 클럭트리 회로
KR100436033B1 (ko) 단위 동기 지연 라인 회로를 내장하는 반도체 메모리장치의 내부 클럭 신호 발생 회로
KR20020002540A (ko) 리드 동작 시에 지연고정루프의 록킹 위치를 고정시키는쉬프트활성화신호 발생 장치를 갖는 지연고정루프
KR100856062B1 (ko) 반도체 메모리 장치 및 그 구동방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19990513

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20010428

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20020208

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20020307

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20020308

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20050225

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20060223

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20070223

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20080225

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20090225

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20100223

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20110222

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20120223

Start annual number: 11

End annual number: 11

FPAY Annual fee payment

Payment date: 20130227

Year of fee payment: 12

PR1001 Payment of annual fee

Payment date: 20130227

Start annual number: 12

End annual number: 12

FPAY Annual fee payment

Payment date: 20140220

Year of fee payment: 13

PR1001 Payment of annual fee

Payment date: 20140220

Start annual number: 13

End annual number: 13

FPAY Annual fee payment

Payment date: 20150224

Year of fee payment: 14

PR1001 Payment of annual fee

Payment date: 20150224

Start annual number: 14

End annual number: 14

FPAY Annual fee payment

Payment date: 20160218

Year of fee payment: 15

PR1001 Payment of annual fee

Payment date: 20160218

Start annual number: 15

End annual number: 15

FPAY Annual fee payment

Payment date: 20170220

Year of fee payment: 16

PR1001 Payment of annual fee

Payment date: 20170220

Start annual number: 16

End annual number: 16

FPAY Annual fee payment

Payment date: 20180219

Year of fee payment: 17

PR1001 Payment of annual fee

Payment date: 20180219

Start annual number: 17

End annual number: 17

EXPY Expiration of term
PC1801 Expiration of term

Termination date: 20191113

Termination category: Expiration of duration