KR100307124B1 - 반도체장치및그제조방법 - Google Patents

반도체장치및그제조방법 Download PDF

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Publication number
KR100307124B1
KR100307124B1 KR1019980025483A KR19980025483A KR100307124B1 KR 100307124 B1 KR100307124 B1 KR 100307124B1 KR 1019980025483 A KR1019980025483 A KR 1019980025483A KR 19980025483 A KR19980025483 A KR 19980025483A KR 100307124 B1 KR100307124 B1 KR 100307124B1
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KR
South Korea
Prior art keywords
film
gate
gate electrode
insulating film
contact plug
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019980025483A
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English (en)
Korean (ko)
Other versions
KR19990007474A (ko
Inventor
가쯔히꼬 히에다
Original Assignee
니시무로 타이죠
가부시끼가이샤 도시바
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Application filed by 니시무로 타이죠, 가부시끼가이샤 도시바 filed Critical 니시무로 타이죠
Publication of KR19990007474A publication Critical patent/KR19990007474A/ko
Application granted granted Critical
Publication of KR100307124B1 publication Critical patent/KR100307124B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019980025483A 1997-06-30 1998-06-30 반도체장치및그제조방법 Expired - Fee Related KR100307124B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP97-174199 1997-06-30
JP9174199A JPH1126757A (ja) 1997-06-30 1997-06-30 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
KR19990007474A KR19990007474A (ko) 1999-01-25
KR100307124B1 true KR100307124B1 (ko) 2001-10-19

Family

ID=15974466

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980025483A Expired - Fee Related KR100307124B1 (ko) 1997-06-30 1998-06-30 반도체장치및그제조방법

Country Status (3)

Country Link
US (1) US6072221A (enExample)
JP (1) JPH1126757A (enExample)
KR (1) KR100307124B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100465380B1 (ko) * 2000-12-04 2005-01-13 샤프 가부시키가이샤 반도체 장치 및 그의 제조 방법

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US7829144B2 (en) 1997-11-05 2010-11-09 Tokyo Electron Limited Method of forming a metal film for electrode
JPH11195621A (ja) 1997-11-05 1999-07-21 Tokyo Electron Ltd バリアメタル、その形成方法、ゲート電極及びその形成方法
JP3175700B2 (ja) * 1998-08-24 2001-06-11 日本電気株式会社 メタルゲート電界効果トランジスタの製造方法
US6096644A (en) * 1998-09-08 2000-08-01 Advanced Micro Devices, Inc. Self-aligned contacts to source/drain silicon electrodes utilizing polysilicon and metal silicides
US6432803B1 (en) * 1998-12-14 2002-08-13 Matsushita Electric Industrial Co., Inc. Semiconductor device and method of fabricating the same
KR20010003682A (ko) * 1999-06-24 2001-01-15 김영환 자기정렬식 게이트전극 형성방법
KR100345069B1 (ko) * 1999-06-30 2002-07-19 주식회사 하이닉스반도체 반도체 소자의 폴리실리콘 플러그 형성방법
KR100338104B1 (ko) * 1999-06-30 2002-05-24 박종섭 반도체 소자의 제조 방법
JP2001102580A (ja) 1999-09-30 2001-04-13 Nec Corp 半導体装置及びその製造方法
JP2001127169A (ja) 1999-10-27 2001-05-11 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR100356136B1 (ko) 1999-12-23 2002-10-19 동부전자 주식회사 반도체 장치 제조 방법
KR100314473B1 (ko) 1999-12-23 2001-11-15 한신혁 반도체 소자 제조 방법
KR100433093B1 (ko) * 1999-12-31 2004-05-27 주식회사 하이닉스반도체 반도체소자의 제조방법
US6445050B1 (en) 2000-02-08 2002-09-03 International Business Machines Corporation Symmetric device with contacts self aligned to gate
KR100350056B1 (ko) * 2000-03-09 2002-08-24 삼성전자 주식회사 다마신 게이트 공정에서 자기정렬콘택패드 형성 방법
KR100366617B1 (ko) * 2000-03-13 2003-01-09 삼성전자 주식회사 자기 정렬 콘택홀 제조 방법
KR100456319B1 (ko) * 2000-05-19 2004-11-10 주식회사 하이닉스반도체 폴리머와 산화막의 연마 선택비 차이를 이용한 반도체소자의 게이트 형성 방법
KR100400030B1 (ko) * 2000-06-05 2003-09-29 삼성전자주식회사 금속막의 화학 및 기계적 연마용 슬러리 및 그 제조방법과상기 슬러리를 이용한 반도체 소자의 금속 배선 형성 방법
FR2810157B1 (fr) * 2000-06-09 2002-08-16 Commissariat Energie Atomique Procede de realisation d'un composant electronique a source, drain et grille auto-allignes, en architecture damascene
JP2002043544A (ja) 2000-07-21 2002-02-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR100643571B1 (ko) * 2000-12-30 2006-11-10 주식회사 하이닉스반도체 금속 대머신 게이트 형성방법
JP3539491B2 (ja) * 2001-02-26 2004-07-07 シャープ株式会社 半導体装置の製造方法
JP2002261277A (ja) 2001-03-06 2002-09-13 Toshiba Corp 半導体装置及びその製造方法
US6531324B2 (en) * 2001-03-28 2003-03-11 Sharp Laboratories Of America, Inc. MFOS memory transistor & method of fabricating same
KR100745951B1 (ko) * 2001-06-29 2007-08-02 주식회사 하이닉스반도체 금속 게이트 제조 방법
JP3746968B2 (ja) * 2001-08-29 2006-02-22 東京エレクトロン株式会社 絶縁膜の形成方法および形成システム
US6673664B2 (en) * 2001-10-16 2004-01-06 Sharp Laboratories Of America, Inc. Method of making a self-aligned ferroelectric memory transistor
JP2003224269A (ja) * 2001-10-26 2003-08-08 Hewlett Packard Co <Hp> 集積回路を製造するための装置および方法
US6740536B2 (en) * 2001-10-26 2004-05-25 Hewlett-Packard Develpment Corporation, L.P. Devices and methods for integrated circuit manufacturing
KR100444301B1 (ko) * 2001-12-29 2004-08-16 주식회사 하이닉스반도체 질화막 ｃｍｐ를 이용한 다마신 금속 게이트 형성 방법
KR100574487B1 (ko) * 2002-07-05 2006-04-27 주식회사 하이닉스반도체 반도체소자의 ｍｏｓ 트랜지스터 제조방법
US20040256671A1 (en) * 2003-06-17 2004-12-23 Kuo-Tai Huang Metal-oxide-semiconductor transistor with selective epitaxial growth film
US7521368B2 (en) * 2004-05-07 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR100672153B1 (ko) * 2005-05-25 2007-01-19 주식회사 하이닉스반도체 텅스텐 게이트 전극을 갖는 반도체 소자의 제조방법
KR100792394B1 (ko) * 2005-09-28 2008-01-09 주식회사 하이닉스반도체 반도체 소자 제조 방법
TWI322485B (en) * 2005-10-12 2010-03-21 Hynix Semiconductor Inc Method for forming contact hole of semiconductor device
KR100704380B1 (ko) 2005-12-06 2007-04-09 한국전자통신연구원 반도체 소자 제조 방법
US7859112B2 (en) * 2006-01-13 2010-12-28 Micron Technology, Inc. Additional metal routing in semiconductor devices
JP4470182B2 (ja) 2006-08-25 2010-06-02 エルピーダメモリ株式会社 半導体装置の製造方法
FR2915023B1 (fr) * 2007-04-13 2009-07-17 St Microelectronics Crolles 2 Realisation de contacts auto-positionnes par epitaxie
JP2009099738A (ja) * 2007-10-16 2009-05-07 Toshiba Corp 半導体装置、半導体装置の製造方法及び半導体記憶装置の製造方法
US8803245B2 (en) 2008-06-30 2014-08-12 Mcafee, Inc. Method of forming stacked trench contacts and structures formed thereby
US7838373B2 (en) * 2008-07-30 2010-11-23 Intel Corporation Replacement spacers for MOSFET fringe capacitance reduction and processes of making same
US8035165B2 (en) * 2008-08-26 2011-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Integrating a first contact structure in a gate last process
US7745275B2 (en) * 2008-09-10 2010-06-29 Arm Limited Integrated circuit and a method of making an integrated circuit to provide a gate contact over a diffusion region
US8946828B2 (en) * 2010-02-09 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having elevated structure and method of manufacturing the same
US8373239B2 (en) 2010-06-08 2013-02-12 International Business Machines Corporation Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric
US8785322B2 (en) * 2011-01-31 2014-07-22 International Business Machines Corporation Devices and methods to optimize materials and properties for replacement metal gate structures
DE102011004323B4 (de) * 2011-02-17 2016-02-25 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Halbleiterbauelement mit selbstjustierten Kontaktelementen und Verfahren zu seiner Herstellung
US8846513B2 (en) * 2011-09-23 2014-09-30 Globalfoundries Inc. Semiconductor device comprising replacement gate electrode structures and self-aligned contact elements formed by a late contact fill
JP5863381B2 (ja) * 2011-10-17 2016-02-16 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
CN105448683B (zh) * 2014-05-26 2019-10-25 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法和电子装置
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100465380B1 (ko) * 2000-12-04 2005-01-13 샤프 가부시키가이샤 반도체 장치 및 그의 제조 방법

Also Published As

Publication number Publication date
KR19990007474A (ko) 1999-01-25
US6072221A (en) 2000-06-06
JPH1126757A (ja) 1999-01-29

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