KR100299721B1 - 반도체장치제조방법 - Google Patents

반도체장치제조방법 Download PDF

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Publication number
KR100299721B1
KR100299721B1 KR1019940014938A KR19940014938A KR100299721B1 KR 100299721 B1 KR100299721 B1 KR 100299721B1 KR 1019940014938 A KR1019940014938 A KR 1019940014938A KR 19940014938 A KR19940014938 A KR 19940014938A KR 100299721 B1 KR100299721 B1 KR 100299721B1
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South Korea
Prior art keywords
film
semiconductor
semiconductor film
group
crystallization
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Expired - Lifetime
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KR1019940014938A
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English (en)
Korean (ko)
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KR950002076A (ko
Inventor
쟝홍용
다까야마또루
다께무라야수히꼬
미야나가아끼하루
오따히사시
다께야마주니찌
Original Assignee
야마자끼 순페이
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR950002076A publication Critical patent/KR950002076A/ko
Application granted granted Critical
Publication of KR100299721B1 publication Critical patent/KR100299721B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1019940014938A 1993-06-25 1994-06-25 반도체장치제조방법 Expired - Lifetime KR100299721B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP18075293 1993-06-25
JP93-180752 1993-06-25
JP3661694 1994-02-08
JP94-036616 1994-02-08

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1019970075810A Division KR100306834B1 (ko) 1993-06-25 1997-12-29 반도체장치및그제조방법

Publications (2)

Publication Number Publication Date
KR950002076A KR950002076A (ko) 1995-01-04
KR100299721B1 true KR100299721B1 (ko) 2001-12-15

Family

ID=26375695

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019940014938A Expired - Lifetime KR100299721B1 (ko) 1993-06-25 1994-06-25 반도체장치제조방법
KR1019970075810A Expired - Fee Related KR100306834B1 (ko) 1993-06-25 1997-12-29 반도체장치및그제조방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1019970075810A Expired - Fee Related KR100306834B1 (ko) 1993-06-25 1997-12-29 반도체장치및그제조방법

Country Status (6)

Country Link
US (1) US5882960A (https=)
EP (3) EP0631325B1 (https=)
KR (2) KR100299721B1 (https=)
CN (4) CN1055786C (https=)
DE (2) DE69432615T2 (https=)
TW (1) TW295703B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100536523B1 (ko) * 1997-07-23 2006-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체박막및반도체장치

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JPH0766424A (ja) * 1993-08-20 1995-03-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TW264575B (https=) * 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
JP2860869B2 (ja) * 1993-12-02 1999-02-24 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
KR100319332B1 (ko) * 1993-12-22 2002-04-22 야마자끼 순페이 반도체장치및전자광학장치
US6706572B1 (en) 1994-08-31 2004-03-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film transistor using a high pressure oxidation step
KR100265179B1 (ko) * 1995-03-27 2000-09-15 야마자끼 순페이 반도체장치와 그의 제작방법
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3645379B2 (ja) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5985740A (en) 1996-01-19 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device including reduction of a catalyst
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
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KR100560047B1 (ko) * 1997-02-24 2006-05-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체박막및반도체장치
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US7297978B2 (en) 1997-07-23 2007-11-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device

Also Published As

Publication number Publication date
EP1026752B1 (en) 2008-07-09
EP1026752A3 (en) 2002-11-20
CN1155991C (zh) 2004-06-30
EP0631325B1 (en) 2003-05-07
KR19990055848A (ko) 1999-07-15
KR100306834B1 (ko) 2004-02-11
EP0631325A3 (en) 1996-12-18
CN1100562A (zh) 1995-03-22
DE69435114D1 (de) 2008-08-21
CN1055786C (zh) 2000-08-23
EP1026751A3 (en) 2002-11-20
CN1222752A (zh) 1999-07-14
EP0631325A2 (en) 1994-12-28
EP1026752A2 (en) 2000-08-09
DE69432615D1 (de) 2003-06-12
CN1161831C (zh) 2004-08-11
CN1208807C (zh) 2005-06-29
DE69432615T2 (de) 2004-02-19
CN1267902A (zh) 2000-09-27
TW295703B (https=) 1997-01-11
KR950002076A (ko) 1995-01-04
EP1026751A2 (en) 2000-08-09
US5882960A (en) 1999-03-16
CN1267907A (zh) 2000-09-27

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