KR100296612B1 - 출력버퍼의출력전류를크게할수있는반도체기억장치 - Google Patents

출력버퍼의출력전류를크게할수있는반도체기억장치 Download PDF

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Publication number
KR100296612B1
KR100296612B1 KR1019980020816A KR19980020816A KR100296612B1 KR 100296612 B1 KR100296612 B1 KR 100296612B1 KR 1019980020816 A KR1019980020816 A KR 1019980020816A KR 19980020816 A KR19980020816 A KR 19980020816A KR 100296612 B1 KR100296612 B1 KR 100296612B1
Authority
KR
South Korea
Prior art keywords
mos transistor
potential
channel mos
circuit
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019980020816A
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English (en)
Korean (ko)
Other versions
KR19990036519A (ko
Inventor
야스히코 츠키카와
Original Assignee
다니구찌 이찌로오, 기타오카 다카시
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다니구찌 이찌로오, 기타오카 다카시, 미쓰비시덴키 가부시키가이샤 filed Critical 다니구찌 이찌로오, 기타오카 다카시
Publication of KR19990036519A publication Critical patent/KR19990036519A/ko
Application granted granted Critical
Publication of KR100296612B1 publication Critical patent/KR100296612B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Logic Circuits (AREA)
KR1019980020816A 1997-10-07 1998-06-05 출력버퍼의출력전류를크게할수있는반도체기억장치 Expired - Fee Related KR100296612B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP97-274437 1997-10-07
JP27443797A JP4306821B2 (ja) 1997-10-07 1997-10-07 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR19990036519A KR19990036519A (ko) 1999-05-25
KR100296612B1 true KR100296612B1 (ko) 2001-08-07

Family

ID=17541675

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980020816A Expired - Fee Related KR100296612B1 (ko) 1997-10-07 1998-06-05 출력버퍼의출력전류를크게할수있는반도체기억장치

Country Status (5)

Country Link
US (1) US5982705A (enExample)
JP (1) JP4306821B2 (enExample)
KR (1) KR100296612B1 (enExample)
DE (1) DE19820040B4 (enExample)
TW (1) TW374923B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220156712A (ko) 2021-05-18 2022-11-28 신성환 지주 시설물용 까치집 방지기구

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3765163B2 (ja) * 1997-07-14 2006-04-12 ソニー株式会社 レベルシフト回路
IT1298819B1 (it) * 1998-03-27 2000-02-02 Sgs Thomson Microelectronics Circuito di commutazione
JP3502330B2 (ja) * 2000-05-18 2004-03-02 Ｎｅｃマイクロシステム株式会社 出力回路
JP2002032990A (ja) * 2000-07-17 2002-01-31 Mitsubishi Electric Corp 半導体記憶装置
JP2002076879A (ja) * 2000-09-04 2002-03-15 Mitsubishi Electric Corp 半導体装置
DE10055242C1 (de) * 2000-11-08 2002-02-21 Infineon Technologies Ag Schaltungsanordnung mit interner Versorgungsspannung
JP2006059910A (ja) * 2004-08-18 2006-03-02 Fujitsu Ltd 半導体装置
JP2007035672A (ja) 2005-07-22 2007-02-08 Renesas Technology Corp 半導体集積回路装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950025787A (ko) * 1994-02-16 1995-09-18 사토 후미오 반도체 기억장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60201591A (ja) * 1984-03-26 1985-10-12 Hitachi Ltd 半導体集積回路装置
JPH04341997A (ja) * 1991-05-20 1992-11-27 Mitsubishi Electric Corp 半導体メモリ装置
JPH05347386A (ja) * 1992-02-21 1993-12-27 Sony Corp 半導体装置
JPH0774616A (ja) * 1993-07-06 1995-03-17 Seiko Epson Corp 信号電圧レベル変換回路及び出力バッファ回路
KR960004567B1 (ko) * 1994-02-04 1996-04-09 삼성전자주식회사 반도체 메모리 장치의 데이타 출력 버퍼
KR0120565B1 (ko) * 1994-04-18 1997-10-30 김주용 래치-업을 방지한 씨모스형 데이타 출력버퍼
US5543734A (en) * 1994-08-30 1996-08-06 Intel Corporation Voltage supply isolation buffer
JPH09139077A (ja) * 1995-11-17 1997-05-27 Hitachi Ltd ２段ブースト電圧回路、およびこれを用いた半導体メモリ、ならびにこの半導体メモリを用いたコンピュータシステム
JP3738070B2 (ja) * 1995-11-29 2006-01-25 株式会社ルネサステクノロジ 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950025787A (ko) * 1994-02-16 1995-09-18 사토 후미오 반도체 기억장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220156712A (ko) 2021-05-18 2022-11-28 신성환 지주 시설물용 까치집 방지기구

Also Published As

Publication number Publication date
DE19820040A1 (de) 1999-04-08
KR19990036519A (ko) 1999-05-25
JP4306821B2 (ja) 2009-08-05
US5982705A (en) 1999-11-09
DE19820040B4 (de) 2005-10-27
JPH11111946A (ja) 1999-04-23
TW374923B (en) 1999-11-21

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