TW374923B - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
TW374923B
TW374923B TW087106768A TW87106768A TW374923B TW 374923 B TW374923 B TW 374923B TW 087106768 A TW087106768 A TW 087106768A TW 87106768 A TW87106768 A TW 87106768A TW 374923 B TW374923 B TW 374923B
Authority
TW
Taiwan
Prior art keywords
output transistor
output
grave
memory device
semiconductor memory
Prior art date
Application number
TW087106768A
Other languages
English (en)
Chinese (zh)
Inventor
Yasuhiko Tsukikawa
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW374923B publication Critical patent/TW374923B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Logic Circuits (AREA)
TW087106768A 1997-10-07 1998-05-01 Semiconductor memory device TW374923B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27443797A JP4306821B2 (ja) 1997-10-07 1997-10-07 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW374923B true TW374923B (en) 1999-11-21

Family

ID=17541675

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087106768A TW374923B (en) 1997-10-07 1998-05-01 Semiconductor memory device

Country Status (5)

Country Link
US (1) US5982705A (enExample)
JP (1) JP4306821B2 (enExample)
KR (1) KR100296612B1 (enExample)
DE (1) DE19820040B4 (enExample)
TW (1) TW374923B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3765163B2 (ja) * 1997-07-14 2006-04-12 ソニー株式会社 レベルシフト回路
IT1298819B1 (it) * 1998-03-27 2000-02-02 Sgs Thomson Microelectronics Circuito di commutazione
JP3502330B2 (ja) * 2000-05-18 2004-03-02 Ｎｅｃマイクロシステム株式会社 出力回路
JP2002032990A (ja) * 2000-07-17 2002-01-31 Mitsubishi Electric Corp 半導体記憶装置
JP2002076879A (ja) * 2000-09-04 2002-03-15 Mitsubishi Electric Corp 半導体装置
DE10055242C1 (de) * 2000-11-08 2002-02-21 Infineon Technologies Ag Schaltungsanordnung mit interner Versorgungsspannung
JP2006059910A (ja) * 2004-08-18 2006-03-02 Fujitsu Ltd 半導体装置
JP2007035672A (ja) 2005-07-22 2007-02-08 Renesas Technology Corp 半導体集積回路装置
KR102555109B1 (ko) 2021-05-18 2023-07-17 신성환 지주 시설물용 까치집 방지기구

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60201591A (ja) * 1984-03-26 1985-10-12 Hitachi Ltd 半導体集積回路装置
JPH04341997A (ja) * 1991-05-20 1992-11-27 Mitsubishi Electric Corp 半導体メモリ装置
JPH05347386A (ja) * 1992-02-21 1993-12-27 Sony Corp 半導体装置
JPH0774616A (ja) * 1993-07-06 1995-03-17 Seiko Epson Corp 信号電圧レベル変換回路及び出力バッファ回路
KR960004567B1 (ko) * 1994-02-04 1996-04-09 삼성전자주식회사 반도체 메모리 장치의 데이타 출력 버퍼
JPH07230693A (ja) * 1994-02-16 1995-08-29 Toshiba Corp 半導体記憶装置
KR0120565B1 (ko) * 1994-04-18 1997-10-30 김주용 래치-업을 방지한 씨모스형 데이타 출력버퍼
US5543734A (en) * 1994-08-30 1996-08-06 Intel Corporation Voltage supply isolation buffer
JPH09139077A (ja) * 1995-11-17 1997-05-27 Hitachi Ltd ２段ブースト電圧回路、およびこれを用いた半導体メモリ、ならびにこの半導体メモリを用いたコンピュータシステム
JP3738070B2 (ja) * 1995-11-29 2006-01-25 株式会社ルネサステクノロジ 半導体装置

Also Published As

Publication number Publication date
KR19990036519A (ko) 1999-05-25
DE19820040A1 (de) 1999-04-08
JP4306821B2 (ja) 2009-08-05
DE19820040B4 (de) 2005-10-27
JPH11111946A (ja) 1999-04-23
KR100296612B1 (ko) 2001-08-07
US5982705A (en) 1999-11-09

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees