KR100260975B1 - 반도체장치 및 그의 제조방법 - Google Patents

반도체장치 및 그의 제조방법 Download PDF

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Publication number
KR100260975B1
KR100260975B1 KR1019950015322A KR19950015322A KR100260975B1 KR 100260975 B1 KR100260975 B1 KR 100260975B1 KR 1019950015322 A KR1019950015322 A KR 1019950015322A KR 19950015322 A KR19950015322 A KR 19950015322A KR 100260975 B1 KR100260975 B1 KR 100260975B1
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KR
South Korea
Prior art keywords
film
silicon film
amorphous silicon
semiconductor device
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019950015322A
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English (en)
Korean (ko)
Other versions
KR960006093A (ko
Inventor
나오키 마키타
다카시 후나이
Original Assignee
마찌다 가쯔히꼬
샤프 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP06164381A external-priority patent/JP3107345B2/ja
Priority claimed from JP16438094A external-priority patent/JP3192555B2/ja
Application filed by 마찌다 가쯔히꼬, 샤프 가부시키가이샤 filed Critical 마찌다 가쯔히꼬
Publication of KR960006093A publication Critical patent/KR960006093A/ko
Application granted granted Critical
Publication of KR100260975B1 publication Critical patent/KR100260975B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
KR1019950015322A 1994-07-15 1995-06-07 반도체장치 및 그의 제조방법 Expired - Fee Related KR100260975B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP06164381A JP3107345B2 (ja) 1994-07-15 1994-07-15 半導体装置の製造方法
JP94-164380 1994-07-15
JP94-164381 1994-07-15
JP16438094A JP3192555B2 (ja) 1994-07-15 1994-07-15 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR960006093A KR960006093A (ko) 1996-02-23
KR100260975B1 true KR100260975B1 (ko) 2000-07-01

Family

ID=26489503

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950015322A Expired - Fee Related KR100260975B1 (ko) 1994-07-15 1995-06-07 반도체장치 및 그의 제조방법

Country Status (3)

Country Link
US (1) US5851860A (https=)
KR (1) KR100260975B1 (https=)
TW (1) TW280943B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7105872B2 (en) 2003-07-23 2006-09-12 Seiko Epson Corporation Thin film semiconductor element and method of manufacturing the same
KR100662492B1 (ko) * 2001-07-10 2007-01-02 엘지.필립스 엘시디 주식회사 비정질막 결정화 방법 및 이를 적용한 액정표시소자의제조방법

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US6059873A (en) 1994-05-30 2000-05-09 Semiconductor Energy Laboratory Co., Ltd. Optical processing method with control of the illumination energy of laser light
JP4056571B2 (ja) 1995-08-02 2008-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3917205B2 (ja) 1995-11-30 2007-05-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3240258B2 (ja) * 1996-03-21 2001-12-17 シャープ株式会社 半導体装置、薄膜トランジスタ及びその製造方法、ならびに液晶表示装置及びその製造方法
US6746905B1 (en) * 1996-06-20 2004-06-08 Kabushiki Kaisha Toshiba Thin film transistor and manufacturing process therefor
US6444507B1 (en) * 1996-10-22 2002-09-03 Seiko Epson Corporation Fabrication process for thin film transistors in a display or electronic device
US6140166A (en) * 1996-12-27 2000-10-31 Semicondutor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor and method for manufacturing semiconductor device
US6387803B2 (en) * 1997-01-29 2002-05-14 Ultratech Stepper, Inc. Method for forming a silicide region on a silicon body
US6830616B1 (en) * 1997-02-10 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor and manufacturing method of semiconductor device
JP3973723B2 (ja) * 1997-02-12 2007-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3976828B2 (ja) * 1997-02-17 2007-09-19 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法
JP3974229B2 (ja) * 1997-07-22 2007-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH1178104A (ja) * 1997-09-12 1999-03-23 Brother Ind Ltd 記録ヘッド並びに画像形成装置
US6821710B1 (en) * 1998-02-11 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US6458645B2 (en) * 1998-02-26 2002-10-01 Micron Technology, Inc. Capacitor having tantalum oxynitride film and method for making same
US6673126B2 (en) 1998-05-14 2004-01-06 Seiko Epson Corporation Multiple chamber fabrication equipment for thin film transistors in a display or electronic device
US6818059B2 (en) * 1998-07-10 2004-11-16 Lg. Philips Lcd Co., Ltd. Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof
JP2000058839A (ja) * 1998-08-05 2000-02-25 Semiconductor Energy Lab Co Ltd 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法
US6246070B1 (en) * 1998-08-21 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same
JP4493741B2 (ja) * 1998-09-04 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7126161B2 (en) 1998-10-13 2006-10-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having El layer and sealing material
JP2000174282A (ja) * 1998-12-03 2000-06-23 Semiconductor Energy Lab Co Ltd 半導体装置
DE60036449T2 (de) * 1999-03-30 2008-06-19 Seiko Epson Corp. Verfahren zur hestellung eines dünnschichtfeldeffekttransistors
JP3287406B2 (ja) * 1999-06-11 2002-06-04 日本電気株式会社 半導体装置の製造方法
US6709985B1 (en) * 1999-08-26 2004-03-23 Advanced Micro Devices, Inc. Arrangement and method for providing an imaging path using a silicon-crystal damaging laser
KR100640207B1 (ko) * 1999-10-29 2006-10-31 엘지.필립스 엘시디 주식회사 박막트랜지스터 및 그 제조방법
US7045444B2 (en) * 2000-12-19 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device that includes selectively adding a noble gas element
US6858480B2 (en) 2001-01-18 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI221645B (en) 2001-01-19 2004-10-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US7115453B2 (en) 2001-01-29 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2002231627A (ja) 2001-01-30 2002-08-16 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
US7141822B2 (en) 2001-02-09 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP4993810B2 (ja) * 2001-02-16 2012-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6830994B2 (en) * 2001-03-09 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having a crystallized semiconductor film
JP4718700B2 (ja) 2001-03-16 2011-07-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7052943B2 (en) * 2001-03-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6812081B2 (en) 2001-03-26 2004-11-02 Semiconductor Energy Laboratory Co.,.Ltd. Method of manufacturing semiconductor device
US7374976B2 (en) 2002-11-22 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin film transistor
TW575926B (en) * 2002-11-28 2004-02-11 Au Optronics Corp Method of forming polysilicon layer and manufacturing method of polysilicon thin film transistor using the same
KR100618614B1 (ko) * 2003-09-02 2006-09-08 진 장 플렉서블 금속 기판 상의 실리콘 박막 형성 방법
US20050124129A1 (en) * 2003-10-10 2005-06-09 Takayuki Ito Method of fabrication of silicon-gate MIS transistor
KR100682893B1 (ko) * 2004-10-13 2007-02-15 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법
KR100719555B1 (ko) * 2005-07-20 2007-05-17 삼성에스디아이 주식회사 박막 트랜지스터, 그 박막 트랜지스터를 포함한 유기 발광표시장치 및 그 박막 트랜지스터에 이용되는 다결정 반도체결정화 방법
JP2007073855A (ja) * 2005-09-09 2007-03-22 Toshiba Corp 半導体薄膜の製造方法、電子デバイスの製造方法及び液晶表示デバイスの製造方法
WO2007046290A1 (en) * 2005-10-18 2007-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100721956B1 (ko) * 2005-12-13 2007-05-25 삼성에스디아이 주식회사 다결정 실리콘층, 상기 다결정 실리콘층을 이용한 평판표시 장치 및 이들을 제조하는 방법
KR100721957B1 (ko) * 2005-12-13 2007-05-25 삼성에스디아이 주식회사 다결정 실리콘층, 상기 다결정 실리콘층을 이용한 평판표시 장치 및 이들을 제조하는 방법
US7972943B2 (en) 2007-03-02 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP4539684B2 (ja) * 2007-06-21 2010-09-08 株式会社デンソー 炭化珪素半導体装置およびその製造方法
KR100882909B1 (ko) * 2007-06-27 2009-02-10 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조 방법, 이를 포함하는유기전계발광표시장치, 및 그의 제조 방법
US8704083B2 (en) 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
KR102216678B1 (ko) * 2014-07-14 2021-02-18 삼성디스플레이 주식회사 박막트랜지스터 제조방법
US20200212227A1 (en) * 2016-08-17 2020-07-02 Boe Technology Group Co., Ltd. Thin film transistor, manufacturing method thereof, array substrate, display device

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
KR100662492B1 (ko) * 2001-07-10 2007-01-02 엘지.필립스 엘시디 주식회사 비정질막 결정화 방법 및 이를 적용한 액정표시소자의제조방법
US7105872B2 (en) 2003-07-23 2006-09-12 Seiko Epson Corporation Thin film semiconductor element and method of manufacturing the same

Also Published As

Publication number Publication date
TW280943B (https=) 1996-07-11
KR960006093A (ko) 1996-02-23
US5851860A (en) 1998-12-22

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