KR100260975B1 - 반도체장치 및 그의 제조방법 - Google Patents

반도체장치 및 그의 제조방법 Download PDF

Info

Publication number
KR100260975B1
KR100260975B1 KR1019950015322A KR19950015322A KR100260975B1 KR 100260975 B1 KR100260975 B1 KR 100260975B1 KR 1019950015322 A KR1019950015322 A KR 1019950015322A KR 19950015322 A KR19950015322 A KR 19950015322A KR 100260975 B1 KR100260975 B1 KR 100260975B1
Authority
KR
South Korea
Prior art keywords
film
silicon film
amorphous silicon
semiconductor device
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019950015322A
Other languages
English (en)
Korean (ko)
Other versions
KR960006093A (ko
Inventor
나오키 마키타
다카시 후나이
Original Assignee
마찌다 가쯔히꼬
샤프 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP16438094A external-priority patent/JP3192555B2/ja
Priority claimed from JP06164381A external-priority patent/JP3107345B2/ja
Application filed by 마찌다 가쯔히꼬, 샤프 가부시키가이샤 filed Critical 마찌다 가쯔히꼬
Publication of KR960006093A publication Critical patent/KR960006093A/ko
Application granted granted Critical
Publication of KR100260975B1 publication Critical patent/KR100260975B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
KR1019950015322A 1994-07-15 1995-06-07 반도체장치 및 그의 제조방법 Expired - Fee Related KR100260975B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP94-164380 1994-07-15
JP94-164381 1994-07-15
JP16438094A JP3192555B2 (ja) 1994-07-15 1994-07-15 半導体装置の製造方法
JP06164381A JP3107345B2 (ja) 1994-07-15 1994-07-15 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR960006093A KR960006093A (ko) 1996-02-23
KR100260975B1 true KR100260975B1 (ko) 2000-07-01

Family

ID=26489503

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950015322A Expired - Fee Related KR100260975B1 (ko) 1994-07-15 1995-06-07 반도체장치 및 그의 제조방법

Country Status (3)

Country Link
US (1) US5851860A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR100260975B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW280943B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7105872B2 (en) 2003-07-23 2006-09-12 Seiko Epson Corporation Thin film semiconductor element and method of manufacturing the same
KR100662492B1 (ko) * 2001-07-10 2007-01-02 엘지.필립스 엘시디 주식회사 비정질막 결정화 방법 및 이를 적용한 액정표시소자의제조방법

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6059873A (en) 1994-05-30 2000-05-09 Semiconductor Energy Laboratory Co., Ltd. Optical processing method with control of the illumination energy of laser light
JP4056571B2 (ja) 1995-08-02 2008-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3917205B2 (ja) 1995-11-30 2007-05-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3240258B2 (ja) * 1996-03-21 2001-12-17 シャープ株式会社 半導体装置、薄膜トランジスタ及びその製造方法、ならびに液晶表示装置及びその製造方法
US6746905B1 (en) * 1996-06-20 2004-06-08 Kabushiki Kaisha Toshiba Thin film transistor and manufacturing process therefor
US6444507B1 (en) * 1996-10-22 2002-09-03 Seiko Epson Corporation Fabrication process for thin film transistors in a display or electronic device
US6140166A (en) * 1996-12-27 2000-10-31 Semicondutor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor and method for manufacturing semiconductor device
US6387803B2 (en) * 1997-01-29 2002-05-14 Ultratech Stepper, Inc. Method for forming a silicide region on a silicon body
US6830616B1 (en) * 1997-02-10 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor and manufacturing method of semiconductor device
JP3973723B2 (ja) * 1997-02-12 2007-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3976828B2 (ja) * 1997-02-17 2007-09-19 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法
JP3974229B2 (ja) * 1997-07-22 2007-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH1178104A (ja) * 1997-09-12 1999-03-23 Brother Ind Ltd 記録ヘッド並びに画像形成装置
US6821710B1 (en) * 1998-02-11 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US6458645B2 (en) * 1998-02-26 2002-10-01 Micron Technology, Inc. Capacitor having tantalum oxynitride film and method for making same
US6673126B2 (en) 1998-05-14 2004-01-06 Seiko Epson Corporation Multiple chamber fabrication equipment for thin film transistors in a display or electronic device
US6818059B2 (en) * 1998-07-10 2004-11-16 Lg. Philips Lcd Co., Ltd. Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof
JP2000058839A (ja) * 1998-08-05 2000-02-25 Semiconductor Energy Lab Co Ltd 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法
US6246070B1 (en) * 1998-08-21 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same
JP4493741B2 (ja) * 1998-09-04 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7126161B2 (en) * 1998-10-13 2006-10-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having El layer and sealing material
JP2000174282A (ja) * 1998-12-03 2000-06-23 Semiconductor Energy Lab Co Ltd 半導体装置
CN100385682C (zh) * 1999-03-30 2008-04-30 精工爱普生株式会社 薄膜晶体管的制造方法
JP3287406B2 (ja) * 1999-06-11 2002-06-04 日本電気株式会社 半導体装置の製造方法
US6709985B1 (en) * 1999-08-26 2004-03-23 Advanced Micro Devices, Inc. Arrangement and method for providing an imaging path using a silicon-crystal damaging laser
KR100640207B1 (ko) * 1999-10-29 2006-10-31 엘지.필립스 엘시디 주식회사 박막트랜지스터 및 그 제조방법
US7045444B2 (en) 2000-12-19 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device that includes selectively adding a noble gas element
US6858480B2 (en) 2001-01-18 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI221645B (en) 2001-01-19 2004-10-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US7115453B2 (en) 2001-01-29 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2002231627A (ja) 2001-01-30 2002-08-16 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
US7141822B2 (en) 2001-02-09 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP4993810B2 (ja) * 2001-02-16 2012-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6830994B2 (en) * 2001-03-09 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having a crystallized semiconductor film
JP4718700B2 (ja) 2001-03-16 2011-07-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7052943B2 (en) * 2001-03-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6812081B2 (en) 2001-03-26 2004-11-02 Semiconductor Energy Laboratory Co.,.Ltd. Method of manufacturing semiconductor device
US7374976B2 (en) 2002-11-22 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin film transistor
TW575926B (en) * 2002-11-28 2004-02-11 Au Optronics Corp Method of forming polysilicon layer and manufacturing method of polysilicon thin film transistor using the same
KR100618614B1 (ko) * 2003-09-02 2006-09-08 진 장 플렉서블 금속 기판 상의 실리콘 박막 형성 방법
US20050124129A1 (en) * 2003-10-10 2005-06-09 Takayuki Ito Method of fabrication of silicon-gate MIS transistor
KR100682893B1 (ko) * 2004-10-13 2007-02-15 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법
KR100719555B1 (ko) * 2005-07-20 2007-05-17 삼성에스디아이 주식회사 박막 트랜지스터, 그 박막 트랜지스터를 포함한 유기 발광표시장치 및 그 박막 트랜지스터에 이용되는 다결정 반도체결정화 방법
JP2007073855A (ja) * 2005-09-09 2007-03-22 Toshiba Corp 半導体薄膜の製造方法、電子デバイスの製造方法及び液晶表示デバイスの製造方法
WO2007046290A1 (en) * 2005-10-18 2007-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100721957B1 (ko) * 2005-12-13 2007-05-25 삼성에스디아이 주식회사 다결정 실리콘층, 상기 다결정 실리콘층을 이용한 평판표시 장치 및 이들을 제조하는 방법
KR100721956B1 (ko) * 2005-12-13 2007-05-25 삼성에스디아이 주식회사 다결정 실리콘층, 상기 다결정 실리콘층을 이용한 평판표시 장치 및 이들을 제조하는 방법
US7972943B2 (en) 2007-03-02 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP4539684B2 (ja) * 2007-06-21 2010-09-08 株式会社デンソー 炭化珪素半導体装置およびその製造方法
KR100882909B1 (ko) * 2007-06-27 2009-02-10 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조 방법, 이를 포함하는유기전계발광표시장치, 및 그의 제조 방법
US8704083B2 (en) 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
KR102216678B1 (ko) * 2014-07-14 2021-02-18 삼성디스플레이 주식회사 박막트랜지스터 제조방법
US20200212227A1 (en) * 2016-08-17 2020-07-02 Boe Technology Group Co., Ltd. Thin film transistor, manufacturing method thereof, array substrate, display device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4015558A (en) * 1972-12-04 1977-04-05 Optical Coating Laboratory, Inc. Vapor deposition apparatus
JPH0261032A (ja) * 1988-08-24 1990-03-01 Sumitomo Metal Ind Ltd 疲労強度の優れた肌焼鋼
JPH034564A (ja) * 1989-06-01 1991-01-10 Seiko Epson Corp 半導体装置の製造方法
JPH03291972A (ja) * 1990-04-09 1991-12-24 Ricoh Co Ltd Ｍｏｓ型薄膜トランジスタ
JP3054187B2 (ja) * 1990-11-09 2000-06-19 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置の作製方法
JP3575698B2 (ja) * 1991-01-30 2004-10-13 Ｔｄｋ株式会社 多結晶半導体装置の製造方法
US5578520A (en) * 1991-05-28 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
JPH05136048A (ja) * 1991-11-13 1993-06-01 Fujitsu Ltd 半導体装置の製造方法
JP3222179B2 (ja) * 1992-02-06 2001-10-22 電気化学工業株式会社 回路測定用端子およびその製造方法
JPH05243575A (ja) * 1992-02-27 1993-09-21 Sony Corp 薄膜トランジスタおよびその製造方法
TW226478B (en) * 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
TW403972B (en) * 1993-01-18 2000-09-01 Semiconductor Energy Lab Method of fabricating mis semiconductor device
JP3562588B2 (ja) * 1993-02-15 2004-09-08 株式会社半導体エネルギー研究所 半導体装置の製造方法
JPH06244103A (ja) * 1993-02-15 1994-09-02 Semiconductor Energy Lab Co Ltd 半導体の製造方法
JP3193803B2 (ja) * 1993-03-12 2001-07-30 株式会社半導体エネルギー研究所 半導体素子の作製方法
TW241377B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1993-03-12 1995-02-21 Semiconductor Energy Res Co Ltd
US5501989A (en) * 1993-03-22 1996-03-26 Semiconductor Energy Laboratory Co., Ltd. Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100662492B1 (ko) * 2001-07-10 2007-01-02 엘지.필립스 엘시디 주식회사 비정질막 결정화 방법 및 이를 적용한 액정표시소자의제조방법
US7105872B2 (en) 2003-07-23 2006-09-12 Seiko Epson Corporation Thin film semiconductor element and method of manufacturing the same

Also Published As

Publication number Publication date
TW280943B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1996-07-11
KR960006093A (ko) 1996-02-23
US5851860A (en) 1998-12-22

Similar Documents

Publication Publication Date Title
KR100260975B1 (ko) 반도체장치 및 그의 제조방법
KR100228231B1 (ko) 반도체 장치 및 그 제조방법
KR100193144B1 (ko) 반도체 장치 및 그 제조 방법
KR100220207B1 (ko) 반도체장치 및 그의 제조방법
US5543352A (en) Method for manufacturing a semiconductor device using a catalyst
KR100270367B1 (ko) 전기광학 디바이스용 반도체 회로 및 그 제조방법
US5966594A (en) Semiconductor device and method for manufacturing the same
KR100273930B1 (ko) 반도체장치 제작방법
US5710050A (en) Method for fabricating a semiconductor device
KR100186886B1 (ko) 반도체장치 제작방법
JP3389022B2 (ja) 半導体装置
US5814835A (en) Semiconductor device and method for fabricating the same
KR100440602B1 (ko) 반도체 장치 및 그의 제조 방법
JP3269738B2 (ja) 半導体装置およびその製造方法
JP3059337B2 (ja) 半導体装置およびその製造方法
KR0180573B1 (ko) 반도체 장치 및 그 제작방법
JP3107345B2 (ja) 半導体装置の製造方法
JP3192555B2 (ja) 半導体装置の製造方法
KR100256912B1 (ko) 반도체회로, 반도체장치 및 이들의 제조방법
JP3582768B2 (ja) 半導体装置の製造方法
JP3425399B2 (ja) 半導体装置の製造方法
JPH09148245A (ja) 半導体装置およびその製造方法
JP2002353140A (ja) 半導体装置及びその製造方法
JPH0897138A (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment

Payment date: 20120322

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

FPAY Annual fee payment

Payment date: 20130321

Year of fee payment: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20140415

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20140415

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000