KR100234609B1 - 반도체 기억 장치 - Google Patents

반도체 기억 장치 Download PDF

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Publication number
KR100234609B1
KR100234609B1 KR1019960011363A KR19960011363A KR100234609B1 KR 100234609 B1 KR100234609 B1 KR 100234609B1 KR 1019960011363 A KR1019960011363 A KR 1019960011363A KR 19960011363 A KR19960011363 A KR 19960011363A KR 100234609 B1 KR100234609 B1 KR 100234609B1
Authority
KR
South Korea
Prior art keywords
gate
voltage
control
gates
common gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019960011363A
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English (en)
Korean (ko)
Other versions
KR960039003A (ko
Inventor
고지 사꾸이
히로시 나까무라
도시히꼬 히메노
쥰이찌 미야모또
Original Assignee
니시무로 타이죠
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니시무로 타이죠, 가부시끼가이샤 도시바 filed Critical 니시무로 타이죠
Publication of KR960039003A publication Critical patent/KR960039003A/ko
Application granted granted Critical
Publication of KR100234609B1 publication Critical patent/KR100234609B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
KR1019960011363A 1995-04-17 1996-04-16 반도체 기억 장치 Expired - Lifetime KR100234609B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-090420 1995-04-17
JP9042095A JP3544743B2 (ja) 1995-04-17 1995-04-17 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR960039003A KR960039003A (ko) 1996-11-21
KR100234609B1 true KR100234609B1 (ko) 1999-12-15

Family

ID=13998116

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960011363A Expired - Lifetime KR100234609B1 (ko) 1995-04-17 1996-04-16 반도체 기억 장치

Country Status (6)

Country Link
US (2) US5818756A (enExample)
EP (1) EP0739016B1 (enExample)
JP (1) JP3544743B2 (enExample)
KR (1) KR100234609B1 (enExample)
DE (1) DE69614299T2 (enExample)
TW (1) TW312014B (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3544743B2 (ja) * 1995-04-17 2004-07-21 株式会社東芝 半導体記憶装置
DE19730116C2 (de) * 1997-07-14 2001-12-06 Infineon Technologies Ag Halbleiterspeicher mit nicht-flüchtigen Zwei-Transistor-Speicherzellen
JP3175665B2 (ja) * 1997-10-24 2001-06-11 日本電気株式会社 不揮発性半導体記憶装置のデータ消去方法
JPH11177071A (ja) * 1997-12-11 1999-07-02 Toshiba Corp 不揮発性半導体記憶装置
US6359810B1 (en) * 1998-03-13 2002-03-19 Atmel Corporation Page mode erase in a flash memory array
US6393540B1 (en) 1998-06-30 2002-05-21 Emc Corporation Moving a logical object from a set of source locations to a set of destination locations using a single command
US6542909B1 (en) * 1998-06-30 2003-04-01 Emc Corporation System for determining mapping of logical objects in a computer system
US7383294B1 (en) 1998-06-30 2008-06-03 Emc Corporation System for determining the mapping of logical objects in a data storage system
US6883063B2 (en) * 1998-06-30 2005-04-19 Emc Corporation Method and apparatus for initializing logical objects in a data storage system
JP3853981B2 (ja) 1998-07-02 2006-12-06 株式会社東芝 半導体記憶装置の製造方法
JP2001028427A (ja) * 1999-07-14 2001-01-30 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP3730508B2 (ja) * 2000-11-13 2006-01-05 株式会社東芝 半導体記憶装置およびその動作方法
JP4203372B2 (ja) * 2003-08-26 2008-12-24 富士雄 舛岡 不揮発性半導体記憶装置及びそれを備えてなる液晶表示装置
JP2005191413A (ja) * 2003-12-26 2005-07-14 Toshiba Corp 不揮発性半導体記憶装置
KR100559715B1 (ko) * 2004-02-25 2006-03-10 주식회사 하이닉스반도체 낸드 플래시 메모리 소자의 소거 방법
KR100673170B1 (ko) * 2005-03-10 2007-01-22 주식회사 하이닉스반도체 향상된 소거 기능을 가지는 플래쉬 메모리 장치 및 그 소거동작 제어 방법
JP4903432B2 (ja) * 2005-12-27 2012-03-28 株式会社東芝 不揮発性半導体記憶装置
KR100849212B1 (ko) * 2006-10-12 2008-07-31 삼성전자주식회사 메모리 카드 및 메모리 카드의 구동 프로그램 업데이트방법
KR100781041B1 (ko) * 2006-11-06 2007-11-30 주식회사 하이닉스반도체 플래시 메모리 장치 및 그 소거 동작 제어 방법
KR101330710B1 (ko) * 2007-11-01 2013-11-19 삼성전자주식회사 플래시 메모리 장치
JP2009253144A (ja) * 2008-04-09 2009-10-29 Toshiba Corp 半導体装置およびその製造方法
JP5305856B2 (ja) 2008-11-19 2013-10-02 株式会社東芝 不揮発性半導体メモリ
JP2010123208A (ja) * 2008-11-20 2010-06-03 Toshiba Corp Ｎａｎｄ型フラッシュメモリ
US8860117B2 (en) 2011-04-28 2014-10-14 Micron Technology, Inc. Semiconductor apparatus with multiple tiers of memory cells with peripheral transistors, and methods
US8964474B2 (en) 2012-06-15 2015-02-24 Micron Technology, Inc. Architecture for 3-D NAND memory
US8982625B2 (en) * 2012-08-31 2015-03-17 Micron Technology, Inc. Memory program disturb reduction
JP2015053094A (ja) * 2013-09-06 2015-03-19 株式会社東芝 半導体記憶装置
JP6139370B2 (ja) * 2013-10-17 2017-05-31 株式会社東芝 不揮発性半導体記憶装置
US9679650B1 (en) 2016-05-06 2017-06-13 Micron Technology, Inc. 3D NAND memory Z-decoder
US10074430B2 (en) * 2016-08-08 2018-09-11 Micron Technology, Inc. Multi-deck memory device with access line and data line segregation between decks and method of operation thereof
US11450381B2 (en) 2019-08-21 2022-09-20 Micron Technology, Inc. Multi-deck memory device including buffer circuitry under array
US20240194256A1 (en) * 2022-12-12 2024-06-13 Micron Technology, Inc. Word line drivers for memory devices

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5357462A (en) * 1991-09-24 1994-10-18 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller
KR960000616B1 (ko) * 1993-01-13 1996-01-10 삼성전자주식회사 불휘발성 반도체 메모리 장치
JPH06259977A (ja) * 1993-03-03 1994-09-16 Nec Ic Microcomput Syst Ltd フラッシュ消去型不揮発性メモリ
DE69325667T2 (de) * 1993-05-28 2000-02-10 Macronix International Co. Ltd., Hsinchu Schneller flash-eprom-programmierungs- und vorprogrammierungsschaltungsentwurf
KR960008823B1 (en) * 1993-11-30 1996-07-05 Samsung Electronics Co Ltd Non-volatile semiconductor memory device
JP3192861B2 (ja) * 1994-03-14 2001-07-30 株式会社東芝 不揮発性半導体記憶装置
JP3544743B2 (ja) * 1995-04-17 2004-07-21 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
DE69614299D1 (de) 2001-09-13
EP0739016B1 (en) 2001-08-08
TW312014B (enExample) 1997-08-01
US6240022B1 (en) 2001-05-29
JP3544743B2 (ja) 2004-07-21
EP0739016A2 (en) 1996-10-23
JPH08287696A (ja) 1996-11-01
KR960039003A (ko) 1996-11-21
US5818756A (en) 1998-10-06
DE69614299T2 (de) 2002-04-18
EP0739016A3 (en) 1998-09-30

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