KR0184093B1 - 불휘발성 반도체 기억장치와 그 소거방법 - Google Patents

불휘발성 반도체 기억장치와 그 소거방법 Download PDF

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Publication number
KR0184093B1
KR0184093B1 KR1019950022788A KR19950022788A KR0184093B1 KR 0184093 B1 KR0184093 B1 KR 0184093B1 KR 1019950022788 A KR1019950022788 A KR 1019950022788A KR 19950022788 A KR19950022788 A KR 19950022788A KR 0184093 B1 KR0184093 B1 KR 0184093B1
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KR
South Korea
Prior art keywords
voltage
cell
memory cell
memory
memory cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019950022788A
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English (en)
Korean (ko)
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KR960006084A (ko
Inventor
시게루 아츠미
마사오 구리야마
히로노리 반바
아키라 우메자와
노부아키 오츠카
Original Assignee
사토 후미오
가부시키가이샤 도시바
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Publication of KR960006084A publication Critical patent/KR960006084A/ko
Application granted granted Critical
Publication of KR0184093B1 publication Critical patent/KR0184093B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells

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  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
KR1019950022788A 1994-07-28 1995-07-28 불휘발성 반도체 기억장치와 그 소거방법 Expired - Lifetime KR0184093B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17672694A JP3238574B2 (ja) 1994-07-28 1994-07-28 不揮発性半導体記憶装置とその消去方法
JP94-176726 1994-07-28

Publications (2)

Publication Number Publication Date
KR960006084A KR960006084A (ko) 1996-02-23
KR0184093B1 true KR0184093B1 (ko) 1999-04-15

Family

ID=16018712

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950022788A Expired - Lifetime KR0184093B1 (ko) 1994-07-28 1995-07-28 불휘발성 반도체 기억장치와 그 소거방법

Country Status (4)

Country Link
US (1) US5568419A (enExample)
JP (1) JP3238574B2 (enExample)
KR (1) KR0184093B1 (enExample)
TW (1) TW301748B (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3226426B2 (ja) * 1994-09-27 2001-11-05 松下電器産業株式会社 半導体メモリ及びその使用方法並びに画像プロセッサ
JPH08263992A (ja) * 1995-03-24 1996-10-11 Sharp Corp 不揮発性半導体記憶装置の書き込み方法
EP0757359B1 (en) * 1995-08-02 2002-05-22 Matsushita Electric Industrial Co., Ltd Semiconductor memory devices
US5576992A (en) * 1995-08-30 1996-11-19 Texas Instruments Incorporated Extended-life method for soft-programming floating-gate memory cells
US5710778A (en) * 1996-04-01 1998-01-20 Cyrpress Semiconductor Corporation High voltage reference and measurement circuit for verifying a programmable cell
JP3920943B2 (ja) * 1996-05-10 2007-05-30 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US5699298A (en) * 1996-05-22 1997-12-16 Macronix International Co., Ltd. Flash memory erase with controlled band-to-band tunneling current
US5914896A (en) * 1996-08-01 1999-06-22 Aplus Flash Technology, Inc. Flash memory with high speed erasing structure using thin oxide and thick oxide semiconductor devices
US5917757A (en) * 1996-08-01 1999-06-29 Aplus Flash Technology, Inc. Flash memory with high speed erasing structure using thin oxide semiconductor devices
US6134140A (en) 1997-05-14 2000-10-17 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with soft-programming to adjust erased state of memory cells
KR100521321B1 (ko) * 1997-11-27 2006-01-12 삼성전자주식회사 플래시 메모리 장치의 소거 방법
DE69824386D1 (de) * 1998-01-22 2004-07-15 St Microelectronics Srl Verfahren für kontrolliertes Löschen von Speicheranordnungen, insbesondere Analog- oder Mehrwert-Flash-EEPROM Anordnungen
US6011722A (en) * 1998-10-13 2000-01-04 Lucent Technologies Inc. Method for erasing and programming memory devices
DE69831155D1 (de) * 1998-10-29 2005-09-15 St Microelectronics Srl Verfahren und Vorrichtung zur Prüfung von nichtprogrammierten Speicherzellen in einem Mehrpegelspeicher
JP3854025B2 (ja) 1998-12-25 2006-12-06 株式会社東芝 不揮発性半導体記憶装置
JP2000251483A (ja) * 1999-02-24 2000-09-14 Sanyo Electric Co Ltd １チップマイクロコンピュータとそのデータリフレッシュ方法
US6134149A (en) 1999-03-01 2000-10-17 Integrated Memory Technologies, Inc. Method and apparatus for reducing high current during chip erase in flash memories
TW439293B (en) * 1999-03-18 2001-06-07 Toshiba Corp Nonvolatile semiconductor memory
US6452837B2 (en) 1999-12-27 2002-09-17 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory and threshold voltage control method therefor
US6584017B2 (en) * 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
US7057935B2 (en) * 2001-08-30 2006-06-06 Micron Technology, Inc. Erase verify for non-volatile memory
US6768685B1 (en) * 2001-11-16 2004-07-27 Mtrix Semiconductor, Inc. Integrated circuit memory array with fast test mode utilizing multiple word line selection and method therefor
US6839280B1 (en) * 2003-06-27 2005-01-04 Freescale Semiconductor, Inc. Variable gate bias for a reference transistor in a non-volatile memory
KR100546342B1 (ko) * 2003-07-12 2006-01-26 삼성전자주식회사 반복적으로 배치되는 프리-디코딩된 신호선들의레이아웃을 개선시키는 로우 디코더 구조, 이를 구비한반도체 메모리 장치, 및 그 방법
JP4245437B2 (ja) * 2003-08-08 2009-03-25 シャープ株式会社 不揮発性半導体記憶装置の書き込み方法
DE10361718A1 (de) * 2003-08-22 2005-03-17 Hynix Semiconductor Inc., Ichon Vorrichtung und Verfahren zum Steuern von nicht flüchtigem DRAM
JP4443886B2 (ja) * 2003-09-30 2010-03-31 株式会社東芝 半導体記憶装置
KR20050064600A (ko) * 2003-12-24 2005-06-29 매그나칩 반도체 유한회사 플래시 메모리 장치
US7701779B2 (en) * 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
KR100744013B1 (ko) 2006-07-31 2007-07-30 삼성전자주식회사 플래시 메모리 장치 및 그것의 소거 방법
KR100874920B1 (ko) 2007-03-15 2008-12-19 삼성전자주식회사 셀 사이의 커플링에 의한 영향을 감소시킨 플래시 메모리장치 및 그 구동방법
JP4992916B2 (ja) * 2009-01-19 2012-08-08 富士通セミコンダクター株式会社 半導体記憶装置
JP5974494B2 (ja) * 2012-01-19 2016-08-23 富士通セミコンダクター株式会社 半導体記憶装置の内部電圧生成回路
US10825529B2 (en) * 2014-08-08 2020-11-03 Macronix International Co., Ltd. Low latency memory erase suspend operation
JP6144741B2 (ja) * 2015-09-28 2017-06-07 ウィンボンド エレクトロニクス コーポレーション 不揮発性半導体メモリ
JP2020098655A (ja) * 2018-12-17 2020-06-25 キオクシア株式会社 半導体記憶装置
CN113409865B (zh) * 2021-06-29 2024-03-15 芯天下技术股份有限公司 非易失性存储器擦除方法、装置、电子设备及存储介质
CN113793633B (zh) * 2021-09-02 2022-12-20 中天弘宇集成电路有限责任公司 电子设备、存储单元的过擦除检测及消除方法
CN116129965A (zh) 2021-11-12 2023-05-16 三星电子株式会社 用于改善保留性能的半导体器件及其操作方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5237535A (en) * 1991-10-09 1993-08-17 Intel Corporation Method of repairing overerased cells in a flash memory
US5233562A (en) * 1991-12-30 1993-08-03 Intel Corporation Methods of repairing field-effect memory cells in an electrically erasable and electrically programmable memory device
JPH06275087A (ja) * 1993-03-19 1994-09-30 Fujitsu Ltd 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
TW301748B (enExample) 1997-04-01
JP3238574B2 (ja) 2001-12-17
US5568419A (en) 1996-10-22
KR960006084A (ko) 1996-02-23
JPH0845284A (ja) 1996-02-16

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