KR0126457B1 - 집적회로, 그 제조방법 및 그 박막형성장치 - Google Patents

집적회로, 그 제조방법 및 그 박막형성장치

Info

Publication number
KR0126457B1
KR0126457B1 KR1019930000136A KR930000136A KR0126457B1 KR 0126457 B1 KR0126457 B1 KR 0126457B1 KR 1019930000136 A KR1019930000136 A KR 1019930000136A KR 930000136 A KR930000136 A KR 930000136A KR 0126457 B1 KR0126457 B1 KR 0126457B1
Authority
KR
South Korea
Prior art keywords
substrate
gas
vapor
integrated circuit
circuit device
Prior art date
Application number
KR1019930000136A
Other languages
English (en)
Korean (ko)
Other versions
KR930017166A (ko
Inventor
히로키 이도
히사오 요시다
데루오 이나
Original Assignee
기타오카 다카시
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4001498A external-priority patent/JPH05179433A/ja
Priority claimed from JP4004636A external-priority patent/JPH05195210A/ja
Priority claimed from JP4060858A external-priority patent/JPH05267473A/ja
Priority claimed from JP4149419A external-priority patent/JPH05339712A/ja
Priority claimed from JP4308599A external-priority patent/JPH0677337A/ja
Application filed by 기타오카 다카시, 미쓰비시덴키 가부시키가이샤 filed Critical 기타오카 다카시
Publication of KR930017166A publication Critical patent/KR930017166A/ko
Application granted granted Critical
Publication of KR0126457B1 publication Critical patent/KR0126457B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76858—After-treatment introducing at least one additional element into the layer by diffusing alloying elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0676—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/915—Active solid-state devices, e.g. transistors, solid-state diodes with titanium nitride portion or region

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
KR1019930000136A 1992-01-08 1993-01-07 집적회로, 그 제조방법 및 그 박막형성장치 KR0126457B1 (ko)

Applications Claiming Priority (18)

Application Number Priority Date Filing Date Title
JP92-001498? 1992-01-08
JP4001498A JPH05179433A (ja) 1992-01-08 1992-01-08 集積回路、その製造方法およびその薄膜形成装置
JP92-001498 1992-01-08
JP92-004636 1992-01-14
JP4004636A JPH05195210A (ja) 1992-01-14 1992-01-14 集積回路、その製造方法およびその薄膜形成装置
JP92-004636? 1992-01-14
JP92-060858? 1992-03-18
JP92-060858 1992-03-18
JP4060858A JPH05267473A (ja) 1992-03-18 1992-03-18 半導体用配線膜の形成方法および形成装置
JP92-149419 1992-06-09
JP92-149419? 1992-06-09
JP4149419A JPH05339712A (ja) 1992-06-09 1992-06-09 成膜装置
JP92-166010? 1992-06-24
JP16601092 1992-06-24
JP92-166010 1992-06-24
JP92-308599 1992-11-18
JP4308599A JPH0677337A (ja) 1992-06-24 1992-11-18 集積回路
JP92-308599? 1992-11-18

Publications (2)

Publication Number Publication Date
KR930017166A KR930017166A (ko) 1993-08-30
KR0126457B1 true KR0126457B1 (ko) 1997-12-26

Family

ID=27547618

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930000136A KR0126457B1 (ko) 1992-01-08 1993-01-07 집적회로, 그 제조방법 및 그 박막형성장치

Country Status (3)

Country Link
US (1) US5561326A (US06534493-20030318-C00130.png)
EP (1) EP0551117A2 (US06534493-20030318-C00130.png)
KR (1) KR0126457B1 (US06534493-20030318-C00130.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140135786A (ko) * 2012-02-24 2014-11-26 스카이워크스 솔루션즈, 인코포레이티드 화합물 반도체용 구리 상호접속부에 관련된 개선된 구조체, 소자 및 방법

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5514908A (en) 1994-04-29 1996-05-07 Sgs-Thomson Microelectronics, Inc. Integrated circuit with a titanium nitride contact barrier having oxygen stuffed grain boundaries
KR0147626B1 (ko) * 1995-03-30 1998-11-02 김광호 타이타늄 카본 나이트라이드 게이트전극 형성방법
US5780908A (en) * 1995-05-09 1998-07-14 Matsushita Electric Industrial Co., Ltd. Semiconductor apparatus with tungstein nitride
JP3318186B2 (ja) * 1995-05-19 2002-08-26 科学技術振興事業団 ガスクラスターの形成方法と薄膜形成方法
US5663088A (en) 1995-05-19 1997-09-02 Micron Technology, Inc. Method of forming a Ta2 O5 dielectric layer with amorphous diffusion barrier layer and method of forming a capacitor having a Ta2 O5 dielectric layer and amorphous diffusion barrier layer
US5962923A (en) * 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
JPH10125627A (ja) * 1996-10-24 1998-05-15 Fujitsu Ltd 半導体装置の製造方法および高融点金属ナイトライド膜の形成方法
JP2877108B2 (ja) * 1996-12-04 1999-03-31 日本電気株式会社 半導体装置およびその製造方法
JP3751392B2 (ja) * 1996-12-27 2006-03-01 長野計器株式会社 半導体素子の電極構造およびその製造方法
EP1093163B1 (en) * 1997-03-25 2004-11-24 Amitec - Advanced Multilayer Interconnect Technologies Ltd. Electronic interconnect structure
US6008125A (en) * 1997-12-12 1999-12-28 Utmc Microelectronic Systems Inc. Method of eliminating buried contact resistance in integrated circuits
JP3436132B2 (ja) * 1998-05-13 2003-08-11 セイコーエプソン株式会社 半導体装置
KR100484253B1 (ko) * 1998-06-27 2005-07-07 주식회사 하이닉스반도체 반도체 장치의 타이타늄막 형성방법
US6268284B1 (en) * 1998-10-07 2001-07-31 Tokyo Electron Limited In situ titanium aluminide deposit in high aspect ratio features
JP3528665B2 (ja) 1998-10-20 2004-05-17 セイコーエプソン株式会社 半導体装置の製造方法
KR100319027B1 (ko) * 1998-11-18 2002-02-19 김호준 이온주입법에의한대전방지용고분자재료의집적회로트레이제조방법
US6255217B1 (en) * 1999-01-04 2001-07-03 International Business Machines Corporation Plasma treatment to enhance inorganic dielectric adhesion to copper
US6046097A (en) * 1999-03-23 2000-04-04 United Microelectronics Corp. Deposition method with improved step coverage
US6375790B1 (en) * 1999-07-19 2002-04-23 Epion Corporation Adaptive GCIB for smoothing surfaces
US6337151B1 (en) * 1999-08-18 2002-01-08 International Business Machines Corporation Graded composition diffusion barriers for chip wiring applications
US6824825B2 (en) * 1999-09-13 2004-11-30 Tokyo Electron Limited Method for depositing metallic nitride series thin film
US6416820B1 (en) * 1999-11-19 2002-07-09 Epion Corporation Method for forming carbonaceous hard film
US6529027B1 (en) 2000-03-23 2003-03-04 Micron Technology, Inc. Interposer and methods for fabricating same
US6498107B1 (en) 2000-05-01 2002-12-24 Epion Corporation Interface control for film deposition by gas-cluster ion-beam processing
US6548341B2 (en) * 2000-08-09 2003-04-15 Infineon Technologies, Ag Process for producing a first electrode and a second electrode, electronic component and electronic memory element
JP4117101B2 (ja) * 2000-08-30 2008-07-16 株式会社ルネサステクノロジ 半導体装置とその製造方法
JP3332909B2 (ja) * 2000-10-30 2002-10-07 松下電器産業株式会社 ゲート電極構造体、その形成方法及び電極構造体の形成方法
US6750156B2 (en) 2001-10-24 2004-06-15 Applied Materials, Inc. Method and apparatus for forming an anti-reflective coating on a substrate
US6686595B2 (en) * 2002-06-26 2004-02-03 Semequip Inc. Electron impact ion source
US7960709B2 (en) * 2002-06-26 2011-06-14 Semequip, Inc. Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
US7799683B2 (en) * 2004-11-08 2010-09-21 Tel Epion, Inc. Copper interconnect wiring and method and apparatus for forming thereof
US7553763B2 (en) * 2005-08-09 2009-06-30 United Microelectronics Corp. Salicide process utilizing a cluster ion implantation process
US8835880B2 (en) * 2006-10-31 2014-09-16 Fei Company Charged particle-beam processing using a cluster source
US7863176B2 (en) * 2008-05-13 2011-01-04 Micron Technology, Inc. Low-resistance interconnects and methods of making same
DE102009043740B4 (de) * 2009-09-30 2021-08-05 Globalfoundries Dresden Module One Llc & Co. Kg Rückseitenmetallisierung mit besserer Haftung in Hochleistungshalbleiterbauelementen
JP5473576B2 (ja) * 2009-12-10 2014-04-16 住友化学株式会社 シリコン膜およびリチウム二次電池
JP5395708B2 (ja) * 2010-03-09 2014-01-22 東京エレクトロン株式会社 基板の配線方法及び半導体製造装置
FR2994443B1 (fr) * 2012-08-10 2015-02-27 Commissariat Energie Atomique Procede de synthese d'un materiau composite nanostructure et dispositif de mise en oeuvre associe.
JP6119518B2 (ja) 2013-02-12 2017-04-26 ソニー株式会社 センサ装置、入力装置及び電子機器
CN105190492B (zh) * 2013-03-18 2019-09-27 索尼公司 传感器装置、输入装置和电子设备
JP6142745B2 (ja) 2013-09-10 2017-06-07 ソニー株式会社 センサ装置、入力装置及び電子機器
JP6545053B2 (ja) * 2015-03-30 2019-07-17 東京エレクトロン株式会社 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法
DE102017219425B3 (de) * 2017-10-30 2018-02-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Nanostrukturierte Titan-Mehrschichtelektrode
CN112779493A (zh) * 2020-08-21 2021-05-11 北京丹鹏表面技术研究中心 一种基于GIS和HIPIMS技术的用于凹版印刷板表面CrN涂层制备方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435920B2 (US06534493-20030318-C00130.png) * 1974-06-10 1979-11-06
US4088926A (en) * 1976-05-10 1978-05-09 Nasa Plasma cleaning device
JPS5919190B2 (ja) * 1980-03-31 1984-05-02 双葉電子工業株式会社 鉛皮膜の製造方法
JPH06105779B2 (ja) * 1983-02-28 1994-12-21 双葉電子工業株式会社 半導体装置及びその製造方法
JPS59168635A (ja) * 1983-03-15 1984-09-22 Fuji Electric Corp Res & Dev Ltd 半導体装置
US4710283A (en) * 1984-01-30 1987-12-01 Denton Vacuum Inc. Cold cathode ion beam source
JPH065733B2 (ja) * 1984-08-27 1994-01-19 アメリカン テレフオン アンド テレグラフ カムパニ− 集積回路デバイスおよびその製造方法
JPS62259469A (ja) * 1986-05-06 1987-11-11 Hitachi Ltd 半導体装置
KR900005118B1 (ko) * 1986-07-14 1990-07-19 미쓰비시전기주식회사 박막 형성장치
CN1019513B (zh) * 1986-10-29 1992-12-16 三菱电机株式会社 化合物薄膜形成装置
JPH081950B2 (ja) * 1986-11-21 1996-01-10 株式会社東芝 半導体装置の製造方法
US4783248A (en) * 1987-02-10 1988-11-08 Siemens Aktiengesellschaft Method for the production of a titanium/titanium nitride double layer
US4882023A (en) * 1988-03-14 1989-11-21 Motorola, Inc. Method and system for producing thin films
US4944961A (en) * 1988-08-05 1990-07-31 Rensselaer Polytechnic Institute Deposition of metals on stepped surfaces
JP2893686B2 (ja) * 1988-09-02 1999-05-24 ソニー株式会社 半導体装置の製造方法
US4977440A (en) * 1989-01-04 1990-12-11 Stevens E Henry Structure and process for contacting and interconnecting semiconductor devices within an integrated circuit
US5278911A (en) * 1989-05-18 1994-01-11 Smiths Industries Public Limited Company Speech recognition using a neural net
JPH03153077A (ja) * 1989-11-10 1991-07-01 Seiko Epson Corp 半導体装置
DE69031903T2 (de) * 1989-11-30 1998-04-16 Sgs Thomson Microelectronics Verfahren zum Herstellen von Zwischenschicht-Kontakten
JPH03192768A (ja) * 1989-12-21 1991-08-22 Fujitsu Ltd 半導体装置
EP0465961B1 (en) * 1990-07-09 1995-08-09 Sony Corporation Semiconductor device on a dielectric isolated substrate
US5108846A (en) * 1990-07-12 1992-04-28 Helmut Steininger Protective layers of germanium ceramics
ES2104675T3 (es) * 1990-11-29 1997-10-16 At & T Corp Contacto de circuito integrado.
JP2660359B2 (ja) * 1991-01-30 1997-10-08 三菱電機株式会社 半導体装置
US5156997A (en) * 1991-02-11 1992-10-20 Microelectronics And Computer Technology Corporation Method of making semiconductor bonding bumps using metal cluster ion deposition
US5223081A (en) * 1991-07-03 1993-06-29 Doan Trung T Method for roughening a silicon or polysilicon surface for a semiconductor substrate
US5196102A (en) * 1991-08-08 1993-03-23 Microelectronics And Computer Technology Corporation Method and apparatus for applying a compound of a metal and a gas onto a surface
EP0545602A1 (en) * 1991-11-26 1993-06-09 STMicroelectronics, Inc. Method for forming barrier metal layers
US5249672A (en) * 1992-02-11 1993-10-05 United States Surgical Corporation Multiple suture retainer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140135786A (ko) * 2012-02-24 2014-11-26 스카이워크스 솔루션즈, 인코포레이티드 화합물 반도체용 구리 상호접속부에 관련된 개선된 구조체, 소자 및 방법

Also Published As

Publication number Publication date
EP0551117A3 (US06534493-20030318-C00130.png) 1995-06-07
EP0551117A2 (en) 1993-07-14
US5561326A (en) 1996-10-01
KR930017166A (ko) 1993-08-30

Similar Documents

Publication Publication Date Title
KR0126457B1 (ko) 집적회로, 그 제조방법 및 그 박막형성장치
US6921722B2 (en) Coating, modification and etching of substrate surface with particle beam irradiation of the same
JP3169151B2 (ja) 薄膜形成装置
US6841044B1 (en) Chemically-enhanced physical vapor deposition
US4828870A (en) Method of forming a thin aluminum film
JP3318186B2 (ja) ガスクラスターの形成方法と薄膜形成方法
KR19980080768A (ko) 낮은 저항을 갖는 평활한 질화 티타늄 박막
JP3944317B2 (ja) Ｃｕ成膜方法
EP0269112A2 (en) Method of forming a thin crystalline metal film
JPH08102463A (ja) 集積回路、その製造方法およびその薄膜形成装置
JPH02175864A (ja) 薄膜形成装置およびこれを用いた薄膜形成方法
JPH05195210A (ja) 集積回路、その製造方法およびその薄膜形成装置
JPH05267473A (ja) 半導体用配線膜の形成方法および形成装置
JPH1088325A (ja) 薄膜形成装置
JPS63282256A (ja) アーク放電蒸発による特に混合又は多層被膜をプラズマ保護付着する蒸発法及びその装置
JPH0582467B2 (US06534493-20030318-C00130.png)
JPH08288273A (ja) ＴｉＮバリア膜の製造方法およびその装置
JPH0750275A (ja) 集積回路およびその薄膜形成装置
JPH06104205A (ja) 配線膜形成装置
JP2843126B2 (ja) 薄膜形成装置
Purushothaman et al. Vapor Deposition Processing
JPH05179433A (ja) 集積回路、その製造方法およびその薄膜形成装置
JPH01290758A (ja) 酸化物薄膜の製造方法
JPS63192862A (ja) 薄膜形成装置
JPH05339712A (ja) 成膜装置

Legal Events

Date Code Title Description
A201 Request for examination
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
J2X1 Appeal (before the patent court)

Free format text: APPEAL AGAINST DECISION TO DECLINE REFUSAL

B701 Decision to grant
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee