JPWO2021251081A5 - - Google Patents

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Publication number
JPWO2021251081A5
JPWO2021251081A5 JP2022530087A JP2022530087A JPWO2021251081A5 JP WO2021251081 A5 JPWO2021251081 A5 JP WO2021251081A5 JP 2022530087 A JP2022530087 A JP 2022530087A JP 2022530087 A JP2022530087 A JP 2022530087A JP WO2021251081 A5 JPWO2021251081 A5 JP WO2021251081A5
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JP
Japan
Prior art keywords
semiconductor device
sub
contact
power supply
supply line
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Application number
JP2022530087A
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English (en)
Japanese (ja)
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JPWO2021251081A1 (https=
JP7731879B2 (ja
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Priority claimed from PCT/JP2021/018899 external-priority patent/WO2021251081A1/ja
Publication of JPWO2021251081A1 publication Critical patent/JPWO2021251081A1/ja
Publication of JPWO2021251081A5 publication Critical patent/JPWO2021251081A5/ja
Application granted granted Critical
Publication of JP7731879B2 publication Critical patent/JP7731879B2/ja
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JP2022530087A 2020-06-08 2021-05-19 半導体装置、電子機器 Active JP7731879B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020099164 2020-06-08
JP2020099164 2020-06-08
PCT/JP2021/018899 WO2021251081A1 (ja) 2020-06-08 2021-05-19 半導体装置、電子機器

Publications (3)

Publication Number Publication Date
JPWO2021251081A1 JPWO2021251081A1 (https=) 2021-12-16
JPWO2021251081A5 true JPWO2021251081A5 (https=) 2023-02-20
JP7731879B2 JP7731879B2 (ja) 2025-09-01

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ID=78847227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022530087A Active JP7731879B2 (ja) 2020-06-08 2021-05-19 半導体装置、電子機器

Country Status (5)

Country Link
US (1) US20230223403A1 (https=)
JP (1) JP7731879B2 (https=)
CN (1) CN115702500A (https=)
DE (1) DE112021002303B4 (https=)
WO (1) WO2021251081A1 (https=)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08115985A (ja) * 1994-10-17 1996-05-07 Nec Corp 低雑音の半導体集積回路
JP3408164B2 (ja) * 1998-09-29 2003-05-19 三洋電機株式会社 半導体集積回路装置
JP2002246553A (ja) * 2001-02-16 2002-08-30 Matsushita Electric Ind Co Ltd 半導体集積回路のノイズ低減装置
JP2005039320A (ja) * 2003-07-15 2005-02-10 Renesas Technology Corp 半導体素子及び高周波電力増幅装置
JP4513575B2 (ja) * 2005-01-12 2010-07-28 三菱電機株式会社 保持解放機構
JP5090696B2 (ja) * 2006-09-12 2012-12-05 ルネサスエレクトロニクス株式会社 半導体装置
JP2008112857A (ja) * 2006-10-30 2008-05-15 Nec Electronics Corp 半導体集積回路装置
JP2008193019A (ja) * 2007-02-08 2008-08-21 Matsushita Electric Ind Co Ltd 半導体集積回路装置
US9490179B2 (en) 2010-05-21 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device
JP5724934B2 (ja) 2011-07-05 2015-05-27 株式会社デンソー 半導体装置
JP6842553B2 (ja) * 2017-08-22 2021-03-17 ローム株式会社 オペアンプ
US10608168B2 (en) * 2017-10-04 2020-03-31 Allegro Microsystems, Llc Isolated hall effect element with improved electro-magnetic isolation
JP7308595B2 (ja) * 2018-07-02 2023-07-14 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イメージセンサ
JP2020004936A (ja) * 2018-07-02 2020-01-09 株式会社デンソー 半導体装置およびその製造方法

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