JP2024537818A5 - - Google Patents

Info

Publication number
JP2024537818A5
JP2024537818A5 JP2024519727A JP2024519727A JP2024537818A5 JP 2024537818 A5 JP2024537818 A5 JP 2024537818A5 JP 2024519727 A JP2024519727 A JP 2024519727A JP 2024519727 A JP2024519727 A JP 2024519727A JP 2024537818 A5 JP2024537818 A5 JP 2024537818A5
Authority
JP
Japan
Prior art keywords
gate
transistor device
source contact
semiconductor layer
layer structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024519727A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024537818A (ja
Filing date
Publication date
Priority claimed from US17/492,032 external-priority patent/US12464760B2/en
Application filed filed Critical
Priority claimed from PCT/US2022/075500 external-priority patent/WO2023056145A1/en
Publication of JP2024537818A publication Critical patent/JP2024537818A/ja
Publication of JP2024537818A5 publication Critical patent/JP2024537818A5/ja
Pending legal-status Critical Current

Links

JP2024519727A 2021-10-01 2022-08-26 安定性を改善されたバイパス・ゲート・トランジスタ Pending JP2024537818A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/492,032 2021-10-01
US17/492,032 US12464760B2 (en) 2016-03-17 2021-10-01 Bypassed gate transistors having improved stability
PCT/US2022/075500 WO2023056145A1 (en) 2021-10-01 2022-08-26 Bypassed gate transistors having improved stability

Publications (2)

Publication Number Publication Date
JP2024537818A JP2024537818A (ja) 2024-10-16
JP2024537818A5 true JP2024537818A5 (https=) 2025-07-15

Family

ID=83283330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024519727A Pending JP2024537818A (ja) 2021-10-01 2022-08-26 安定性を改善されたバイパス・ゲート・トランジスタ

Country Status (3)

Country Link
EP (1) EP4393009A1 (https=)
JP (1) JP2024537818A (https=)
WO (1) WO2023056145A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4481813A1 (en) * 2023-06-21 2024-12-25 NXP USA, Inc. Structures for suppressing odd-mode instabilities
WO2025140234A1 (zh) * 2023-12-25 2025-07-03 苏州能讯高能半导体有限公司 半导体器件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6316793B1 (en) 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
US6548333B2 (en) 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
US6849882B2 (en) 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
US7030428B2 (en) 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
US6982204B2 (en) 2002-07-16 2006-01-03 Cree, Inc. Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
US7045404B2 (en) 2004-01-16 2006-05-16 Cree, Inc. Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
JP2012023212A (ja) * 2010-07-14 2012-02-02 Sumitomo Electric Ind Ltd 半導体装置
WO2018204622A1 (en) * 2017-05-05 2018-11-08 Cree, Inc. High power mmic devices having bypassed gate transistors

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