JPWO2024101130A5 - - Google Patents

Info

Publication number
JPWO2024101130A5
JPWO2024101130A5 JP2024557289A JP2024557289A JPWO2024101130A5 JP WO2024101130 A5 JPWO2024101130 A5 JP WO2024101130A5 JP 2024557289 A JP2024557289 A JP 2024557289A JP 2024557289 A JP2024557289 A JP 2024557289A JP WO2024101130 A5 JPWO2024101130 A5 JP WO2024101130A5
Authority
JP
Japan
Prior art keywords
electrode
gate structure
pad electrode
pad
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024557289A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024101130A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/038174 external-priority patent/WO2024101130A1/ja
Publication of JPWO2024101130A1 publication Critical patent/JPWO2024101130A1/ja
Publication of JPWO2024101130A5 publication Critical patent/JPWO2024101130A5/ja
Pending legal-status Critical Current

Links

JP2024557289A 2022-11-08 2023-10-23 Pending JPWO2024101130A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022178810 2022-11-08
PCT/JP2023/038174 WO2024101130A1 (ja) 2022-11-08 2023-10-23 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2024101130A1 JPWO2024101130A1 (https=) 2024-05-16
JPWO2024101130A5 true JPWO2024101130A5 (https=) 2025-07-17

Family

ID=91032667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024557289A Pending JPWO2024101130A1 (https=) 2022-11-08 2023-10-23

Country Status (2)

Country Link
JP (1) JPWO2024101130A1 (https=)
WO (1) WO2024101130A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758781B2 (ja) * 1985-10-24 1995-06-21 三菱電機株式会社 電界効果型半導体装置
JP6257554B2 (ja) * 2015-05-08 2018-01-10 三菱電機株式会社 半導体装置
JP6610785B2 (ja) * 2016-07-04 2019-11-27 三菱電機株式会社 半導体装置の製造方法
CN113574655B (zh) * 2019-05-22 2024-01-02 罗姆股份有限公司 SiC半导体装置
JP7611155B2 (ja) * 2019-09-30 2025-01-09 ローム株式会社 半導体装置
DE112021002007T5 (de) * 2020-03-30 2023-01-26 Sumitomo Electric Industries, Ltd. Transistor und Halbleitervorrichtung
JP7766031B2 (ja) * 2020-07-31 2025-11-07 ローム株式会社 ＳｉＣ半導体装置

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