JPWO2024101129A5 - - Google Patents

Info

Publication number
JPWO2024101129A5
JPWO2024101129A5 JP2024557288A JP2024557288A JPWO2024101129A5 JP WO2024101129 A5 JPWO2024101129 A5 JP WO2024101129A5 JP 2024557288 A JP2024557288 A JP 2024557288A JP 2024557288 A JP2024557288 A JP 2024557288A JP WO2024101129 A5 JPWO2024101129 A5 JP WO2024101129A5
Authority
JP
Japan
Prior art keywords
resistive
semiconductor device
electrode
main surface
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024557288A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024101129A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/038173 external-priority patent/WO2024101129A1/ja
Publication of JPWO2024101129A1 publication Critical patent/JPWO2024101129A1/ja
Publication of JPWO2024101129A5 publication Critical patent/JPWO2024101129A5/ja
Pending legal-status Critical Current

Links

JP2024557288A 2022-11-08 2023-10-23 Pending JPWO2024101129A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022178809 2022-11-08
PCT/JP2023/038173 WO2024101129A1 (ja) 2022-11-08 2023-10-23 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2024101129A1 JPWO2024101129A1 (https=) 2024-05-16
JPWO2024101129A5 true JPWO2024101129A5 (https=) 2025-07-17

Family

ID=91032597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024557288A Pending JPWO2024101129A1 (https=) 2022-11-08 2023-10-23

Country Status (2)

Country Link
JP (1) JPWO2024101129A1 (https=)
WO (1) WO2024101129A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7816729B2 (en) * 2006-08-08 2010-10-19 Fwu-Iuan Hshieh Trenched MOSFET device with trenched contacts
DE212019000104U1 (de) * 2018-08-07 2020-02-19 Rohm Co., Ltd. SiC-Halbleitervorrichtung
DE212020000212U1 (de) * 2019-04-19 2020-10-20 Rohm Co. Ltd. SiC-Halbleiterbauteil
CN113574655B (zh) * 2019-05-22 2024-01-02 罗姆股份有限公司 SiC半导体装置

Similar Documents

Publication Publication Date Title
JP2018121058A5 (https=)
JP2017041653A5 (ja) 発光ダイオード
JP2021072418A5 (https=)
JP2021034388A5 (https=)
JPWO2022102273A5 (https=)
JPWO2020101323A5 (https=)
JPWO2024101129A5 (https=)
JP3068378B2 (ja) 半導体記憶装置
JP2018198266A5 (https=)
JPWO2022264694A5 (https=)
JP2017069437A5 (https=)
JP2023141616A5 (https=)
JPWO2024101131A5 (https=)
JPWO2024143378A5 (https=)
JPWO2023189754A5 (https=)
JPWO2023171464A5 (https=)
JPWO2024014362A5 (https=)
JPWO2023189053A5 (https=)
JPWO2024101130A5 (https=)
JPWO2023189059A5 (https=)
CN115735185A (zh) 触控基板及显示装置
JPWO2022070304A5 (https=)
JPWO2023157422A5 (https=)
JPWO2023171294A5 (https=)
JPWO2024241883A5 (https=)