JP2023141616A5 - - Google Patents

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Publication number
JP2023141616A5
JP2023141616A5 JP2022048021A JP2022048021A JP2023141616A5 JP 2023141616 A5 JP2023141616 A5 JP 2023141616A5 JP 2022048021 A JP2022048021 A JP 2022048021A JP 2022048021 A JP2022048021 A JP 2022048021A JP 2023141616 A5 JP2023141616 A5 JP 2023141616A5
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JP
Japan
Prior art keywords
region
electrode portion
chip
electrode
contact
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Application number
JP2022048021A
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English (en)
Japanese (ja)
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JP2023141616A (ja
JP7757223B2 (ja
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Publication date
Priority claimed from JP2022048021A external-priority patent/JP7757223B2/ja
Priority to JP2022048021A priority Critical patent/JP7757223B2/ja
Application filed filed Critical
Priority to TW111130066A priority patent/TWI834241B/zh
Priority to US17/822,248 priority patent/US12388031B2/en
Priority to CN202211070105.5A priority patent/CN116867274A/zh
Publication of JP2023141616A publication Critical patent/JP2023141616A/ja
Publication of JP2023141616A5 publication Critical patent/JP2023141616A5/ja
Priority to US19/224,980 priority patent/US20250293181A1/en
Publication of JP7757223B2 publication Critical patent/JP7757223B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2022048021A 2022-03-24 2022-03-24 メモリデバイス Active JP7757223B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2022048021A JP7757223B2 (ja) 2022-03-24 2022-03-24 メモリデバイス
TW111130066A TWI834241B (zh) 2022-03-24 2022-08-10 記憶裝置
US17/822,248 US12388031B2 (en) 2022-03-24 2022-08-25 Memory device
CN202211070105.5A CN116867274A (zh) 2022-03-24 2022-08-30 存储器装置
US19/224,980 US20250293181A1 (en) 2022-03-24 2025-06-02 Memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022048021A JP7757223B2 (ja) 2022-03-24 2022-03-24 メモリデバイス

Publications (3)

Publication Number Publication Date
JP2023141616A JP2023141616A (ja) 2023-10-05
JP2023141616A5 true JP2023141616A5 (https=) 2024-09-26
JP7757223B2 JP7757223B2 (ja) 2025-10-21

Family

ID=88096429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022048021A Active JP7757223B2 (ja) 2022-03-24 2022-03-24 メモリデバイス

Country Status (4)

Country Link
US (2) US12388031B2 (https=)
JP (1) JP7757223B2 (https=)
CN (1) CN116867274A (https=)
TW (1) TWI834241B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240057523A (ko) * 2022-10-24 2024-05-03 삼성전자주식회사 반도체 패키지
EP4566095A1 (en) * 2023-09-25 2025-06-11 Yangtze Memory Technologies Co., Ltd. Semiconductor device having dummy pad and method for forming the same

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106910746B (zh) * 2017-03-08 2018-06-19 长江存储科技有限责任公司 一种3d nand存储器件及其制造方法、封装方法
US11114171B2 (en) * 2017-11-08 2021-09-07 Samsung Electronics Co., Ltd. Non-volatile memory device
JP2019153675A (ja) 2018-03-02 2019-09-12 ルネサスエレクトロニクス株式会社 固体撮像装置およびその製造方法
KR102624170B1 (ko) * 2018-04-30 2024-01-12 삼성전자주식회사 3차원 반도체 메모리 장치
JP7273488B2 (ja) 2018-12-04 2023-05-15 ソニーセミコンダクタソリューションズ株式会社 半導体装置、及び電子機器
US10665607B1 (en) 2019-01-18 2020-05-26 Sandisk Technologies Llc Three-dimensional memory device including a deformation-resistant edge seal structure and methods for making the same
WO2021003635A1 (en) * 2019-07-08 2021-01-14 Yangtze Memory Technologies Co., Ltd. Structure and method for forming capacitors for three-dimensional nand
KR102739662B1 (ko) * 2019-09-02 2024-12-10 삼성전자주식회사 3차원 반도체 메모리 소자
US11233043B2 (en) * 2019-09-02 2022-01-25 Samsung Electronics Co., Ltd. Three-dimensional semiconductor memory device
JP2021136271A (ja) 2020-02-25 2021-09-13 キオクシア株式会社 半導体装置およびその製造方法
JP2021136320A (ja) 2020-02-26 2021-09-13 キオクシア株式会社 半導体装置およびその製造方法
JP2021150511A (ja) * 2020-03-19 2021-09-27 キオクシア株式会社 半導体記憶装置
JP2022035158A (ja) 2020-08-20 2022-03-04 キオクシア株式会社 半導体記憶装置
JP2022050233A (ja) 2020-09-17 2022-03-30 キオクシア株式会社 半導体記憶装置
KR102942729B1 (ko) * 2021-05-21 2026-03-24 삼성전자주식회사 반도체 장치 및 이를 포함하는 전자 시스템
US12581930B2 (en) * 2021-11-29 2026-03-17 Samsung Electronics Co., Ltd. Semiconductor device including electrodes each having a pad part and electronic system including the same
US20230255037A1 (en) * 2022-02-04 2023-08-10 Samsung Electronics Co., Ltd. Three-dimensional non-volatile memory device including peripheral circuits

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