DE112021002303B4 - Halbleiterbauelement - Google Patents

Halbleiterbauelement Download PDF

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Publication number
DE112021002303B4
DE112021002303B4 DE112021002303.9T DE112021002303T DE112021002303B4 DE 112021002303 B4 DE112021002303 B4 DE 112021002303B4 DE 112021002303 T DE112021002303 T DE 112021002303T DE 112021002303 B4 DE112021002303 B4 DE 112021002303B4
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DE
Germany
Prior art keywords
sub
contacts
semiconductor component
substrate
power supply
Prior art date
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Active
Application number
DE112021002303.9T
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German (de)
English (en)
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DE112021002303T5 (de
Inventor
Shuhei Takagiwa
Hiroshi Furutani
Takeshi Seike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
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Rohm Co Ltd
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Publication of DE112021002303T5 publication Critical patent/DE112021002303T5/de
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Publication of DE112021002303B4 publication Critical patent/DE112021002303B4/de
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645—Combinations of only lateral BJTs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45085—Long tailed pairs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/427—Power or ground buses
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45528—Indexing scheme relating to differential amplifiers the FBC comprising one or more passive resistors and being coupled between the LC and the IC
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45612—Indexing scheme relating to differential amplifiers the IC comprising one or more input source followers as input stages in the IC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H10W72/9445—Top-view layouts, e.g. mirror arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE112021002303.9T 2020-06-08 2021-05-19 Halbleiterbauelement Active DE112021002303B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-099164 2020-06-08
JP2020099164 2020-06-08
PCT/JP2021/018899 WO2021251081A1 (ja) 2020-06-08 2021-05-19 半導体装置、電子機器

Publications (2)

Publication Number Publication Date
DE112021002303T5 DE112021002303T5 (de) 2023-03-16
DE112021002303B4 true DE112021002303B4 (de) 2023-09-21

Family

ID=78847227

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112021002303.9T Active DE112021002303B4 (de) 2020-06-08 2021-05-19 Halbleiterbauelement

Country Status (5)

Country Link
US (1) US20230223403A1 (https=)
JP (1) JP7731879B2 (https=)
CN (1) CN115702500A (https=)
DE (1) DE112021002303B4 (https=)
WO (1) WO2021251081A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246553A (ja) 2001-02-16 2002-08-30 Matsushita Electric Ind Co Ltd 半導体集積回路のノイズ低減装置
JP2008193019A (ja) 2007-02-08 2008-08-21 Matsushita Electric Ind Co Ltd 半導体集積回路装置
US20110284973A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device
DE102012211547A1 (de) 2011-07-05 2013-01-10 Denso Corporation Halbleitervorrichtung

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08115985A (ja) * 1994-10-17 1996-05-07 Nec Corp 低雑音の半導体集積回路
JP3408164B2 (ja) * 1998-09-29 2003-05-19 三洋電機株式会社 半導体集積回路装置
JP2005039320A (ja) * 2003-07-15 2005-02-10 Renesas Technology Corp 半導体素子及び高周波電力増幅装置
JP4513575B2 (ja) * 2005-01-12 2010-07-28 三菱電機株式会社 保持解放機構
JP5090696B2 (ja) * 2006-09-12 2012-12-05 ルネサスエレクトロニクス株式会社 半導体装置
JP2008112857A (ja) * 2006-10-30 2008-05-15 Nec Electronics Corp 半導体集積回路装置
JP6842553B2 (ja) * 2017-08-22 2021-03-17 ローム株式会社 オペアンプ
US10608168B2 (en) * 2017-10-04 2020-03-31 Allegro Microsystems, Llc Isolated hall effect element with improved electro-magnetic isolation
JP7308595B2 (ja) * 2018-07-02 2023-07-14 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イメージセンサ
JP2020004936A (ja) * 2018-07-02 2020-01-09 株式会社デンソー 半導体装置およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246553A (ja) 2001-02-16 2002-08-30 Matsushita Electric Ind Co Ltd 半導体集積回路のノイズ低減装置
JP2008193019A (ja) 2007-02-08 2008-08-21 Matsushita Electric Ind Co Ltd 半導体集積回路装置
US20110284973A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device
DE102012211547A1 (de) 2011-07-05 2013-01-10 Denso Corporation Halbleitervorrichtung

Also Published As

Publication number Publication date
DE112021002303T5 (de) 2023-03-16
WO2021251081A1 (ja) 2021-12-16
CN115702500A (zh) 2023-02-14
US20230223403A1 (en) 2023-07-13
JPWO2021251081A1 (https=) 2021-12-16
JP7731879B2 (ja) 2025-09-01

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R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0027060000

Ipc: H10D0084000000