US4778562A
(en)
|
1984-08-13 |
1988-10-18 |
General Motors Corporation |
Reactive ion etching of tin oxide films using neutral reactant gas containing hydrogen
|
US4544444A
(en)
|
1984-08-15 |
1985-10-01 |
General Motors Corporation |
Reactive ion etching of tin oxide films using silicon tetrachloride reactant gas
|
JPS62136579A
(ja)
|
1985-12-09 |
1987-06-19 |
Victor Co Of Japan Ltd |
エツチング方法
|
JPS62179774A
(ja)
|
1986-02-04 |
1987-08-06 |
Fujitsu Ltd |
イメ−ジセンサの製造方法
|
US4708766A
(en)
|
1986-11-07 |
1987-11-24 |
Texas Instruments Incorporated |
Hydrogen iodide etch of tin oxide
|
JP2593305B2
(ja)
|
1987-02-02 |
1997-03-26 |
日本ペイント株式会社 |
ポジ型感光性樹脂組成物
|
JP2644758B2
(ja)
|
1987-07-22 |
1997-08-25 |
株式会社日立製作所 |
レジスト除去方法及び装置
|
JP3001891B2
(ja)
|
1987-10-01 |
2000-01-24 |
グンゼ株式会社 |
透明導電膜のエッチング方法及びその装置
|
JP3001894B2
(ja)
|
1988-09-30 |
2000-01-24 |
グンゼ株式会社 |
多層薄膜素子のエッチング方法及びその装置
|
FR2640809B1
(fr)
|
1988-12-19 |
1993-10-22 |
Chouan Yannick |
Procede de gravure d'une couche d'oxyde metallique et depot simultane d'un film de polymere, application de ce procede a la fabrication d'un transistor
|
US4878993A
(en)
|
1988-12-22 |
1989-11-07 |
North American Philips Corporation |
Method of etching thin indium tin oxide films
|
JP2521815B2
(ja)
|
1989-08-17 |
1996-08-07 |
沖電気工業株式会社 |
透明導電膜のエッチング方法
|
US5032221A
(en)
|
1990-05-07 |
1991-07-16 |
Eastman Kodak Company |
Etching indium tin oxide
|
US5171401A
(en)
|
1990-06-04 |
1992-12-15 |
Eastman Kodak Company |
Plasma etching indium tin oxide
|
US5318664A
(en)
|
1990-06-25 |
1994-06-07 |
General Electric Company |
Patterning of indium-tin oxide via selective reactive ion etching
|
JPH05267701A
(ja)
|
1992-03-18 |
1993-10-15 |
Taiyo Yuden Co Ltd |
酸化錫透明導電膜のパターニング方法
|
RU2053584C1
(ru)
|
1992-05-26 |
1996-01-27 |
Научно-исследовательский институт измерительных систем |
Способ формирования топологического рисунка пленки диоксида олова
|
US5286337A
(en)
|
1993-01-25 |
1994-02-15 |
North American Philips Corporation |
Reactive ion etching or indium tin oxide
|
DE4337309A1
(de)
|
1993-08-26 |
1995-03-02 |
Leybold Ag |
Verfahren und Vorrichtung zum Ätzen von dünnen Schichten, vorzugsweise von Indium-Zinn-Oxid-Schichten
|
KR0135165B1
(ko)
|
1993-10-15 |
1998-04-22 |
윤정환 |
다층레지스트를 이용한 패턴형성방법
|
US5723366A
(en)
|
1994-09-28 |
1998-03-03 |
Sanyo Electric Co. Ltd. |
Dry etching method, method of fabricating semiconductor device, and method of fabricating liquid crystal display device
|
US5607602A
(en)
|
1995-06-07 |
1997-03-04 |
Applied Komatsu Technology, Inc. |
High-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gas
|
US5667631A
(en)
|
1996-06-28 |
1997-09-16 |
Lam Research Corporation |
Dry etching of transparent electrodes in a low pressure plasma reactor
|
US6036876A
(en)
|
1997-06-25 |
2000-03-14 |
Applied Komatsu Technology, Inc. |
Dry-etching of indium and tin oxides
|
US20010008227A1
(en)
|
1997-08-08 |
2001-07-19 |
Mitsuru Sadamoto |
Dry etching method of metal oxide/photoresist film laminate
|
GB9726511D0
(en)
|
1997-12-13 |
1998-02-11 |
Philips Electronics Nv |
Thin film transistors and electronic devices comprising such
|
US6368978B1
(en)
|
1999-03-04 |
2002-04-09 |
Applied Materials, Inc. |
Hydrogen-free method of plasma etching indium tin oxide
|
JP4554011B2
(ja)
|
1999-08-10 |
2010-09-29 |
ルネサスエレクトロニクス株式会社 |
半導体集積回路装置の製造方法
|
KR100447263B1
(ko)
|
1999-12-30 |
2004-09-07 |
주식회사 하이닉스반도체 |
식각 폴리머를 이용한 반도체 소자의 제조방법
|
US6789910B2
(en)
|
2000-04-12 |
2004-09-14 |
Semiconductor Energy Laboratory, Co., Ltd. |
Illumination apparatus
|
JP2003535458A
(ja)
|
2000-04-25 |
2003-11-25 |
東京エレクトロン株式会社 |
加工物のプラズマクリーニング方法とその装置
|
US6580475B2
(en)
|
2000-04-27 |
2003-06-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of fabricating the same
|
US6416822B1
(en)
|
2000-12-06 |
2002-07-09 |
Angstrom Systems, Inc. |
Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
|
US6428859B1
(en)
|
2000-12-06 |
2002-08-06 |
Angstron Systems, Inc. |
Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
|
US6750394B2
(en)
|
2001-01-12 |
2004-06-15 |
Sharp Kabushiki Kaisha |
Thin-film solar cell and its manufacturing method
|
US6623653B2
(en)
|
2001-06-12 |
2003-09-23 |
Sharp Laboratories Of America, Inc. |
System and method for etching adjoining layers of silicon and indium tin oxide
|
JP2003068155A
(ja)
|
2001-08-30 |
2003-03-07 |
Ulvac Japan Ltd |
透明導電性膜のドライエッチング方法
|
US7547635B2
(en)
|
2002-06-14 |
2009-06-16 |
Lam Research Corporation |
Process for etching dielectric films with improved resist and/or etch profile characteristics
|
KR100542736B1
(ko)
|
2002-08-17 |
2006-01-11 |
삼성전자주식회사 |
원자층 증착법을 이용한 산화막의 형성방법 및 이를이용한 반도체 장치의 캐패시터 형성방법
|
WO2004040649A1
(ja)
|
2002-11-01 |
2004-05-13 |
Semiconductor Energy Laboratory Co., Ltd. |
半導体装置および半導体装置の作製方法
|
KR100574952B1
(ko)
|
2003-11-04 |
2006-05-02 |
삼성전자주식회사 |
스플릿 게이트형 비휘발성 반도체 메모리 소자 제조방법
|
US7435610B2
(en)
|
2003-12-31 |
2008-10-14 |
Chung Yuan Christian University |
Fabrication of array pH sensitive EGFET and its readout circuit
|
JP4655939B2
(ja)
|
2004-02-09 |
2011-03-23 |
旭硝子株式会社 |
透明電極の製造方法
|
US7338907B2
(en)
|
2004-10-04 |
2008-03-04 |
Sharp Laboratories Of America, Inc. |
Selective etching processes of silicon nitride and indium oxide thin films for FeRAM device applications
|
US7355672B2
(en)
|
2004-10-04 |
2008-04-08 |
Asml Netherlands B.V. |
Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus
|
US7868304B2
(en)
|
2005-02-07 |
2011-01-11 |
Asml Netherlands B.V. |
Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
|
EP1707952A1
(de)
|
2005-03-31 |
2006-10-04 |
Micronas GmbH |
Gassensitiver Feldeffekttransistor mit Luftspalt und Verfahren zu dessen Herstellung
|
DE102005031469A1
(de)
|
2005-07-04 |
2007-01-11 |
Merck Patent Gmbh |
Medium zur Ätzung von oxidischen, transparenten, leitfähigen Schichten
|
US7561247B2
(en)
|
2005-08-22 |
2009-07-14 |
Asml Netherlands B.V. |
Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus
|
US7393736B2
(en)
|
2005-08-29 |
2008-07-01 |
Micron Technology, Inc. |
Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics
|
US7372058B2
(en)
|
2005-09-27 |
2008-05-13 |
Asml Netherlands B.V. |
Ex-situ removal of deposition on an optical element
|
KR20070076721A
(ko)
|
2006-01-19 |
2007-07-25 |
삼성전자주식회사 |
웨이퍼의 박막 형성 공정 개선 방법
|
JP4609335B2
(ja)
|
2006-02-02 |
2011-01-12 |
富士電機システムズ株式会社 |
炭化珪素半導体基板のドライエッチング方法
|
US20080061030A1
(en)
|
2006-09-13 |
2008-03-13 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Methods for patterning indium tin oxide films
|
US7833893B2
(en)
|
2007-07-10 |
2010-11-16 |
International Business Machines Corporation |
Method for forming conductive structures
|
KR100955265B1
(ko)
|
2007-08-31 |
2010-04-30 |
주식회사 하이닉스반도체 |
반도체 소자의 미세패턴 형성방법
|
KR20100098409A
(ko)
|
2007-11-22 |
2010-09-06 |
간또 가가꾸 가부시끼가이샤 |
에칭액 조성물
|
KR20100103493A
(ko)
|
2007-12-06 |
2010-09-27 |
인테벡, 인코포레이티드 |
패터닝된 미디어의 상업적 제조를 위한 시스템 및 방법
|
US8247315B2
(en)
|
2008-03-17 |
2012-08-21 |
Semiconductor Energy Laboratory Co., Ltd. |
Plasma processing apparatus and method for manufacturing semiconductor device
|
US8435608B1
(en)
|
2008-06-27 |
2013-05-07 |
Novellus Systems, Inc. |
Methods of depositing smooth and conformal ashable hard mask films
|
FR2936651B1
(fr)
|
2008-09-30 |
2011-04-08 |
Commissariat Energie Atomique |
Dispositif optoelectronique organique et son procede d'encapsulation.
|
JP5446648B2
(ja)
|
2008-10-07 |
2014-03-19 |
信越化学工業株式会社 |
パターン形成方法
|
KR20100044029A
(ko)
|
2008-10-21 |
2010-04-29 |
주식회사 하이닉스반도체 |
반도체 소자의 제조 방법
|
KR20100052598A
(ko)
|
2008-11-11 |
2010-05-20 |
삼성전자주식회사 |
미세 패턴의 형성방법
|
US8492282B2
(en)
|
2008-11-24 |
2013-07-23 |
Micron Technology, Inc. |
Methods of forming a masking pattern for integrated circuits
|
KR101751661B1
(ko)
|
2008-12-19 |
2017-06-27 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
트랜지스터의 제작 방법
|
US9640396B2
(en)
|
2009-01-07 |
2017-05-02 |
Brewer Science Inc. |
Spin-on spacer materials for double- and triple-patterning lithography
|
JP5356516B2
(ja)
|
2009-05-20 |
2013-12-04 |
株式会社東芝 |
凹凸パターン形成方法
|
US8163094B1
(en)
|
2009-07-23 |
2012-04-24 |
The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration |
Method to improve indium bump bonding via indium oxide removal using a multi-step plasma process
|
US9390909B2
(en)
|
2013-11-07 |
2016-07-12 |
Novellus Systems, Inc. |
Soft landing nanolaminates for advanced patterning
|
US9892917B2
(en)
|
2010-04-15 |
2018-02-13 |
Lam Research Corporation |
Plasma assisted atomic layer deposition of multi-layer films for patterning applications
|
US8435901B2
(en)
|
2010-06-11 |
2013-05-07 |
Tokyo Electron Limited |
Method of selectively etching an insulation stack for a metal interconnect
|
JP2012099517A
(ja)
|
2010-10-29 |
2012-05-24 |
Sony Corp |
半導体装置及び半導体装置の製造方法
|
US8747964B2
(en)
|
2010-11-04 |
2014-06-10 |
Novellus Systems, Inc. |
Ion-induced atomic layer deposition of tantalum
|
US8901016B2
(en)
|
2010-12-28 |
2014-12-02 |
Asm Japan K.K. |
Method of forming metal oxide hardmask
|
US9111775B2
(en)
|
2011-01-28 |
2015-08-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Silicon structure and manufacturing methods thereof and of capacitor including silicon structure
|
KR20120125102A
(ko)
|
2011-05-06 |
2012-11-14 |
한국화학연구원 |
원자층 증착법을 이용한 주석산화물 박막의 제조방법
|
US9190316B2
(en)
|
2011-10-26 |
2015-11-17 |
Globalfoundries U.S. 2 Llc |
Low energy etch process for nitrogen-containing dielectric layer
|
TWI479663B
(zh)
|
2011-12-22 |
2015-04-01 |
Au Optronics Corp |
陣列基板及其製作方法
|
JP6015893B2
(ja)
|
2012-02-28 |
2016-10-26 |
国立研究開発法人産業技術総合研究所 |
薄膜トランジスタの製造方法
|
WO2013141232A1
(ja)
|
2012-03-23 |
2013-09-26 |
三洋電機株式会社 |
太陽電池及びその製造方法
|
US10861978B2
(en)
|
2012-04-02 |
2020-12-08 |
Samsung Display Co., Ltd. |
Display device
|
US8987047B2
(en)
|
2012-04-02 |
2015-03-24 |
Samsung Display Co., Ltd. |
Thin film transistor, thin film transistor array panel including the same, and method of manufacturing the same
|
US20150140726A1
(en)
|
2012-07-10 |
2015-05-21 |
Sharp Kabushiki Kaisha |
Method for manufacturing semiconductor device
|
WO2014039420A1
(en)
|
2012-09-04 |
2014-03-13 |
Matheson Tri-Gas, Inc. |
In-situ tco chamber clean
|
JP2014086500A
(ja)
|
2012-10-22 |
2014-05-12 |
Tokyo Electron Ltd |
銅層をエッチングする方法、及びマスク
|
JP6538300B2
(ja)
|
2012-11-08 |
2019-07-03 |
ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated |
感受性基材上にフィルムを蒸着するための方法
|
TWI539626B
(zh)
|
2012-12-21 |
2016-06-21 |
鴻海精密工業股份有限公司 |
發光二極體及其製造方法
|
US9153486B2
(en)
|
2013-04-12 |
2015-10-06 |
Lam Research Corporation |
CVD based metal/semiconductor OHMIC contact for high volume manufacturing applications
|
US9437443B2
(en)
*
|
2013-06-12 |
2016-09-06 |
Globalfoundries Inc. |
Low-temperature sidewall image transfer process using ALD metals, metal oxides and metal nitrides
|
KR20150012540A
(ko)
|
2013-07-25 |
2015-02-04 |
삼성디스플레이 주식회사 |
유기발광표시장치의 제조방법.
|
US9614053B2
(en)
|
2013-12-05 |
2017-04-04 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Spacers with rectangular profile and methods of forming the same
|
US9171703B2
(en)
|
2013-12-20 |
2015-10-27 |
Seagate Technology Llc |
Apparatus with sidewall protection for features
|
US9385028B2
(en)
|
2014-02-03 |
2016-07-05 |
Applied Materials, Inc. |
Air gap process
|
US20150247238A1
(en)
|
2014-03-03 |
2015-09-03 |
Lam Research Corporation |
Rf cycle purging to reduce surface roughness in metal oxide and metal nitride films
|
US9269590B2
(en)
|
2014-04-07 |
2016-02-23 |
Applied Materials, Inc. |
Spacer formation
|
US9209038B2
(en)
|
2014-05-02 |
2015-12-08 |
GlobalFoundries, Inc. |
Methods for fabricating integrated circuits using self-aligned quadruple patterning
|
US9285673B2
(en)
|
2014-07-10 |
2016-03-15 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Assist feature for a photolithographic process
|
US9515156B2
(en)
|
2014-10-17 |
2016-12-06 |
Lam Research Corporation |
Air gap spacer integration for improved fin device performance
|
US9640371B2
(en)
*
|
2014-10-20 |
2017-05-02 |
Lam Research Corporation |
System and method for detecting a process point in multi-mode pulse processes
|
US11114742B2
(en)
|
2014-11-25 |
2021-09-07 |
View, Inc. |
Window antennas
|
TWI633596B
(zh)
|
2015-01-14 |
2018-08-21 |
聯華電子股份有限公司 |
形成溝渠的方法
|
US9478433B1
(en)
|
2015-03-30 |
2016-10-25 |
Applied Materials, Inc. |
Cyclic spacer etching process with improved profile control
|
TWI625784B
(zh)
|
2015-04-02 |
2018-06-01 |
東京威力科創股份有限公司 |
藉由雙頻率電容耦合式電漿利用極紫外線光阻劑之溝槽與孔的圖案化
|
WO2016172116A1
(en)
*
|
2015-04-20 |
2016-10-27 |
Board Of Regents, The University Of Texas System |
Fabricating large area multi-tier nanostructures
|
US9870899B2
(en)
|
2015-04-24 |
2018-01-16 |
Lam Research Corporation |
Cobalt etch back
|
US10049892B2
(en)
|
2015-05-07 |
2018-08-14 |
Tokyo Electron Limited |
Method for processing photoresist materials and structures
|
TWI610361B
(zh)
|
2015-06-26 |
2018-01-01 |
東京威力科創股份有限公司 |
具有可控制的含矽抗反射塗層或矽氮氧化物相對於不同薄膜或遮罩之蝕刻選擇性的氣相蝕刻
|
US9523148B1
(en)
|
2015-08-25 |
2016-12-20 |
Asm Ip Holdings B.V. |
Process for deposition of titanium oxynitride for use in integrated circuit fabrication
|
US10229837B2
(en)
*
|
2016-02-04 |
2019-03-12 |
Lam Research Corporation |
Control of directionality in atomic layer etching
|
TWI661466B
(zh)
|
2016-04-14 |
2019-06-01 |
日商東京威力科創股份有限公司 |
使用具有多種材料之一層的基板圖案化方法
|
US9824893B1
(en)
|
2016-06-28 |
2017-11-21 |
Lam Research Corporation |
Tin oxide thin film spacers in semiconductor device manufacturing
|
US20220005694A1
(en)
|
2016-06-28 |
2022-01-06 |
Lam Research Corporation |
Tin oxide thin film spacers in semiconductor device manufacturing
|
US9997369B2
(en)
|
2016-09-27 |
2018-06-12 |
International Business Machines Corporation |
Margin for fin cut using self-aligned triple patterning
|
US9859153B1
(en)
|
2016-11-14 |
2018-01-02 |
Lam Research Corporation |
Deposition of aluminum oxide etch stop layers
|
CN108321079B
(zh)
|
2017-01-16 |
2021-02-02 |
中芯国际集成电路制造(上海)有限公司 |
半导体结构及其形成方法
|
KR20180093798A
(ko)
|
2017-02-13 |
2018-08-22 |
램 리써치 코포레이션 |
에어 갭들을 생성하는 방법
|
US10546748B2
(en)
*
|
2017-02-17 |
2020-01-28 |
Lam Research Corporation |
Tin oxide films in semiconductor device manufacturing
|
JP2018160556A
(ja)
|
2017-03-23 |
2018-10-11 |
三菱電機株式会社 |
薄膜トランジスタ基板、薄膜トランジスタ基板の製造方法、液晶表示装置、および薄膜トランジスタ
|
US11075079B2
(en)
|
2017-11-21 |
2021-07-27 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Directional deposition for semiconductor fabrication
|
JP7334166B2
(ja)
|
2018-01-30 |
2023-08-28 |
ラム リサーチ コーポレーション |
パターニングにおける酸化スズマンドレル
|
WO2019182872A1
(en)
|
2018-03-19 |
2019-09-26 |
Lam Research Corporation |
Chamfer-less via integration scheme
|
US20210249273A1
(en)
|
2018-05-08 |
2021-08-12 |
Sony Semiconductor Solutions Corporation |
Etching method of oxide semiconductor film, oxide semiconductor workpiece, and electronic device
|
US20190390341A1
(en)
|
2018-06-26 |
2019-12-26 |
Lam Research Corporation |
Deposition tool and method for depositing metal oxide films on organic materials
|
US10867804B2
(en)
|
2018-06-29 |
2020-12-15 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Patterning method for semiconductor device and structures resulting therefrom
|
US10840082B2
(en)
|
2018-08-09 |
2020-11-17 |
Lam Research Corporation |
Method to clean SnO2 film from chamber
|
WO2020263757A1
(en)
|
2019-06-27 |
2020-12-30 |
Lam Research Corporation |
Alternating etch and passivation process
|
TW202212012A
(zh)
|
2020-06-15 |
2022-04-01 |
美商蘭姆研究公司 |
在腔室清潔中的錫氧化物的移除
|