JPWO2020262643A1 - - Google Patents
Info
- Publication number
- JPWO2020262643A1 JPWO2020262643A1 JP2021527791A JP2021527791A JPWO2020262643A1 JP WO2020262643 A1 JPWO2020262643 A1 JP WO2020262643A1 JP 2021527791 A JP2021527791 A JP 2021527791A JP 2021527791 A JP2021527791 A JP 2021527791A JP WO2020262643 A1 JPWO2020262643 A1 JP WO2020262643A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024109748A JP2024133097A (ja) | 2019-06-26 | 2024-07-08 | 固体撮像装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019118222 | 2019-06-26 | ||
| JP2019118222 | 2019-06-26 | ||
| PCT/JP2020/025329 WO2020262643A1 (ja) | 2019-06-26 | 2020-06-26 | 固体撮像装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024109748A Division JP2024133097A (ja) | 2019-06-26 | 2024-07-08 | 固体撮像装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2020262643A1 true JPWO2020262643A1 (https=) | 2020-12-30 |
| JP7541977B2 JP7541977B2 (ja) | 2024-08-29 |
Family
ID=74060389
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021527791A Active JP7541977B2 (ja) | 2019-06-26 | 2020-06-26 | 固体撮像装置 |
| JP2024109748A Pending JP2024133097A (ja) | 2019-06-26 | 2024-07-08 | 固体撮像装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024109748A Pending JP2024133097A (ja) | 2019-06-26 | 2024-07-08 | 固体撮像装置 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US12136640B2 (https=) |
| EP (1) | EP3993040A4 (https=) |
| JP (2) | JP7541977B2 (https=) |
| KR (2) | KR20250067965A (https=) |
| CN (1) | CN113812000A (https=) |
| DE (1) | DE112020003145T5 (https=) |
| TW (2) | TW202504085A (https=) |
| WO (1) | WO2020262643A1 (https=) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018046039A (ja) * | 2016-09-12 | 2018-03-22 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および固体撮像装置 |
| WO2022201745A1 (ja) * | 2021-03-25 | 2022-09-29 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及び固体撮像装置の製造方法 |
| KR102907634B1 (ko) * | 2021-04-09 | 2026-01-06 | 삼성전자주식회사 | 이미지 센서 |
| CN115472636A (zh) * | 2021-06-11 | 2022-12-13 | 群创光电股份有限公司 | 感测装置以及电子装置 |
| WO2023053531A1 (ja) * | 2021-09-30 | 2023-04-06 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置および電子機器 |
| US20250120202A1 (en) * | 2021-10-05 | 2025-04-10 | Sony Semiconductor Solutions Corporation | Imaging device |
| WO2023106215A1 (ja) * | 2021-12-09 | 2023-06-15 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
| KR20230116554A (ko) | 2022-01-28 | 2023-08-04 | 삼성전자주식회사 | 이미지 센서 |
| CN118648111A (zh) * | 2022-02-14 | 2024-09-13 | 索尼半导体解决方案公司 | 固体摄像装置 |
| US20250151430A1 (en) * | 2022-02-14 | 2025-05-08 | Sony Semiconductor Solutions Corporation | Solid-state imaging device |
| US20230268372A1 (en) * | 2022-02-21 | 2023-08-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked cmos image sensor |
| WO2023176449A1 (ja) * | 2022-03-15 | 2023-09-21 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置 |
| JP2023150199A (ja) * | 2022-03-31 | 2023-10-16 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び半導体装置 |
| US20230411431A1 (en) * | 2022-05-17 | 2023-12-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked cmos image sensor and method of manufacturing the same |
| JPWO2023249016A1 (https=) * | 2022-06-24 | 2023-12-28 | ||
| WO2023248925A1 (ja) * | 2022-06-24 | 2023-12-28 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及び電子機器 |
| WO2023249116A1 (ja) * | 2022-06-24 | 2023-12-28 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及び電子機器 |
| US20250374702A1 (en) | 2022-06-24 | 2025-12-04 | Sony Semiconductor Solutions Corporation | Imaging element and electronic device |
| TW202410687A (zh) * | 2022-07-27 | 2024-03-01 | 日商索尼半導體解決方案公司 | 攝像裝置及電子機器 |
| JP2024019961A (ja) * | 2022-08-01 | 2024-02-14 | キヤノン株式会社 | 光電変換装置、機器 |
| JP2024041483A (ja) * | 2022-09-14 | 2024-03-27 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置、光検出装置の製造方法、及び電子機器 |
| JP2024063685A (ja) * | 2022-10-26 | 2024-05-13 | キヤノン株式会社 | 光電変換装置、機器 |
| JP2024063426A (ja) * | 2022-10-26 | 2024-05-13 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
| CN118016678A (zh) * | 2022-11-08 | 2024-05-10 | 上海华力微电子有限公司 | Cmos图像传感器及其制作方法 |
| CN120092510A (zh) * | 2022-11-30 | 2025-06-03 | 索尼半导体解决方案公司 | 光学检测装置和电子设备 |
| WO2024157747A1 (ja) * | 2023-01-27 | 2024-08-02 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置 |
| JP2024111701A (ja) | 2023-02-06 | 2024-08-19 | キヤノン株式会社 | 光電変換装置および機器 |
| US20240290810A1 (en) * | 2023-02-24 | 2024-08-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pixel with dual-pd layout |
| WO2024202616A1 (ja) * | 2023-03-31 | 2024-10-03 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置、光検出装置の製造方法及び電子機器 |
| CN120836203A (zh) * | 2023-04-07 | 2025-10-24 | 索尼半导体解决方案公司 | 光检测装置 |
| CN119586343A (zh) * | 2023-05-31 | 2025-03-07 | 长江存储科技有限责任公司 | 一种半导体器件及其制备方法、存储系统 |
| CN121753507A (zh) * | 2023-10-19 | 2026-03-27 | 索尼半导体解决方案公司 | 光检测装置和固态成像装置 |
| US20250142232A1 (en) * | 2023-10-31 | 2025-05-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked cmos image sensor comprising a pixel sensor for high conversion gain and method for forming the same |
| WO2025134576A1 (ja) * | 2023-12-20 | 2025-06-26 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び光検出装置の製造方法並びに電子機器 |
| WO2025134461A1 (ja) * | 2023-12-22 | 2025-06-26 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置 |
| US20260040697A1 (en) * | 2024-07-31 | 2026-02-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor device and method of forming the same |
| WO2026053610A1 (ja) * | 2024-09-06 | 2026-03-12 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置 |
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2020
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- 2020-06-26 WO PCT/JP2020/025329 patent/WO2020262643A1/ja not_active Ceased
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- 2020-06-26 US US17/620,228 patent/US12136640B2/en active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20250067965A (ko) | 2025-05-15 |
| US20220271070A1 (en) | 2022-08-25 |
| US12136640B2 (en) | 2024-11-05 |
| KR102806487B1 (ko) | 2025-05-13 |
| EP3993040A1 (en) | 2022-05-04 |
| CN113812000A (zh) | 2021-12-17 |
| WO2020262643A1 (ja) | 2020-12-30 |
| EP3993040A4 (en) | 2023-03-29 |
| DE112020003145T5 (de) | 2022-03-17 |
| TWI888390B (zh) | 2025-07-01 |
| JP2024133097A (ja) | 2024-10-01 |
| TW202504085A (zh) | 2025-01-16 |
| TW202118030A (zh) | 2021-05-01 |
| KR20220022905A (ko) | 2022-02-28 |
| US20250098351A1 (en) | 2025-03-20 |
| JP7541977B2 (ja) | 2024-08-29 |
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