DE112020003145T5 - Festkörperbildgebungsvorrichtung - Google Patents

Festkörperbildgebungsvorrichtung Download PDF

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Publication number
DE112020003145T5
DE112020003145T5 DE112020003145.4T DE112020003145T DE112020003145T5 DE 112020003145 T5 DE112020003145 T5 DE 112020003145T5 DE 112020003145 T DE112020003145 T DE 112020003145T DE 112020003145 T5 DE112020003145 T5 DE 112020003145T5
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Germany
Prior art keywords
substrate
semiconductor layer
pixel
imaging device
transistor
Prior art date
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Pending
Application number
DE112020003145.4T
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German (de)
English (en)
Inventor
Keiichi Nakazawa
Koichiro ZAITSU
Nobutoshi Fujii
Yohei Hiura
Shigetaka Mori
Shintaro Okamoto
Keiji Ohshima
Shuji Manda
Junpei YAMAMOTO
Yui Yuga
Shinichi Miyake
Tomoki Kambe
Ryo Ogata
Tatsuki Miyaji
Shinji Nakagawa
Hirofumi Yamashita
Yasushi Hamamoto
Naohiko Kimizuka
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of DE112020003145T5 publication Critical patent/DE112020003145T5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE112020003145.4T 2019-06-26 2020-06-26 Festkörperbildgebungsvorrichtung Pending DE112020003145T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019118222 2019-06-26
JP2019-118222 2019-06-26
PCT/JP2020/025329 WO2020262643A1 (ja) 2019-06-26 2020-06-26 固体撮像装置

Publications (1)

Publication Number Publication Date
DE112020003145T5 true DE112020003145T5 (de) 2022-03-17

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DE112020003145.4T Pending DE112020003145T5 (de) 2019-06-26 2020-06-26 Festkörperbildgebungsvorrichtung

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US (2) US12136640B2 (https=)
EP (1) EP3993040A4 (https=)
JP (2) JP7541977B2 (https=)
KR (2) KR20250067965A (https=)
CN (1) CN113812000A (https=)
DE (1) DE112020003145T5 (https=)
TW (2) TW202504085A (https=)
WO (1) WO2020262643A1 (https=)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018046039A (ja) * 2016-09-12 2018-03-22 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像装置
WO2022201745A1 (ja) * 2021-03-25 2022-09-29 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び固体撮像装置の製造方法
KR102907634B1 (ko) * 2021-04-09 2026-01-06 삼성전자주식회사 이미지 센서
CN115472636A (zh) * 2021-06-11 2022-12-13 群创光电股份有限公司 感测装置以及电子装置
WO2023053531A1 (ja) * 2021-09-30 2023-04-06 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
US20250120202A1 (en) * 2021-10-05 2025-04-10 Sony Semiconductor Solutions Corporation Imaging device
WO2023106215A1 (ja) * 2021-12-09 2023-06-15 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
KR20230116554A (ko) 2022-01-28 2023-08-04 삼성전자주식회사 이미지 센서
CN118648111A (zh) * 2022-02-14 2024-09-13 索尼半导体解决方案公司 固体摄像装置
US20250151430A1 (en) * 2022-02-14 2025-05-08 Sony Semiconductor Solutions Corporation Solid-state imaging device
US20230268372A1 (en) * 2022-02-21 2023-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked cmos image sensor
WO2023176449A1 (ja) * 2022-03-15 2023-09-21 ソニーセミコンダクタソリューションズ株式会社 光検出装置
JP2023150199A (ja) * 2022-03-31 2023-10-16 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び半導体装置
US20230411431A1 (en) * 2022-05-17 2023-12-21 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked cmos image sensor and method of manufacturing the same
JPWO2023249016A1 (https=) * 2022-06-24 2023-12-28
WO2023248925A1 (ja) * 2022-06-24 2023-12-28 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び電子機器
WO2023249116A1 (ja) * 2022-06-24 2023-12-28 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び電子機器
US20250374702A1 (en) 2022-06-24 2025-12-04 Sony Semiconductor Solutions Corporation Imaging element and electronic device
TW202410687A (zh) * 2022-07-27 2024-03-01 日商索尼半導體解決方案公司 攝像裝置及電子機器
JP2024019961A (ja) * 2022-08-01 2024-02-14 キヤノン株式会社 光電変換装置、機器
JP2024041483A (ja) * 2022-09-14 2024-03-27 ソニーセミコンダクタソリューションズ株式会社 光検出装置、光検出装置の製造方法、及び電子機器
JP2024063685A (ja) * 2022-10-26 2024-05-13 キヤノン株式会社 光電変換装置、機器
JP2024063426A (ja) * 2022-10-26 2024-05-13 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
CN118016678A (zh) * 2022-11-08 2024-05-10 上海华力微电子有限公司 Cmos图像传感器及其制作方法
CN120092510A (zh) * 2022-11-30 2025-06-03 索尼半导体解决方案公司 光学检测装置和电子设备
WO2024157747A1 (ja) * 2023-01-27 2024-08-02 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
JP2024111701A (ja) 2023-02-06 2024-08-19 キヤノン株式会社 光電変換装置および機器
US20240290810A1 (en) * 2023-02-24 2024-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Pixel with dual-pd layout
WO2024202616A1 (ja) * 2023-03-31 2024-10-03 ソニーセミコンダクタソリューションズ株式会社 光検出装置、光検出装置の製造方法及び電子機器
CN120836203A (zh) * 2023-04-07 2025-10-24 索尼半导体解决方案公司 光检测装置
CN119586343A (zh) * 2023-05-31 2025-03-07 长江存储科技有限责任公司 一种半导体器件及其制备方法、存储系统
CN121753507A (zh) * 2023-10-19 2026-03-27 索尼半导体解决方案公司 光检测装置和固态成像装置
US20250142232A1 (en) * 2023-10-31 2025-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked cmos image sensor comprising a pixel sensor for high conversion gain and method for forming the same
WO2025134576A1 (ja) * 2023-12-20 2025-06-26 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び光検出装置の製造方法並びに電子機器
WO2025134461A1 (ja) * 2023-12-22 2025-06-26 ソニーセミコンダクタソリューションズ株式会社 光検出装置
US20260040697A1 (en) * 2024-07-31 2026-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor device and method of forming the same
WO2026053610A1 (ja) * 2024-09-06 2026-03-12 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100245506A1 (en) 2009-03-26 2010-09-30 Xerox Corporation Method And Apparatus For Melt Cessation To Limit Ink Flow And Ink Stick Deformation
JP2019118222A (ja) 2017-12-27 2019-07-18 三菱自動車工業株式会社 電動車両の表示システム

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11233789A (ja) 1998-02-12 1999-08-27 Semiconductor Energy Lab Co Ltd 半導体装置
JP2004014911A (ja) 2002-06-10 2004-01-15 Renesas Technology Corp 半導体装置およびその製造方法
US7115925B2 (en) * 2005-01-14 2006-10-03 Omnivision Technologies, Inc. Image sensor and pixel having an optimized floating diffusion
FR2888989B1 (fr) * 2005-07-21 2008-06-06 St Microelectronics Sa Capteur d'images
JP2007095917A (ja) 2005-09-28 2007-04-12 Matsushita Electric Ind Co Ltd 固体撮像装置
JP5985136B2 (ja) 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
JP2010278080A (ja) * 2009-05-26 2010-12-09 Sony Corp 固体撮像装置とその製造方法、及び電子機器
US8872953B2 (en) * 2009-10-30 2014-10-28 Sony Corporation Solid-state imaging device, manufacturing method thereof, camera, and electronic device
CN102668081B (zh) * 2009-12-26 2016-02-03 佳能株式会社 固态图像拾取装置和图像拾取系统
FR2954831B1 (fr) * 2009-12-30 2013-02-08 Commissariat Energie Atomique Dispositif imageur pixelise integre a transduction par diamant et procede de realisation
US20110156197A1 (en) 2009-12-31 2011-06-30 Tivarus Cristian A Interwafer interconnects for stacked CMOS image sensors
JP5717357B2 (ja) 2010-05-18 2015-05-13 キヤノン株式会社 光電変換装置およびカメラ
JP5693060B2 (ja) 2010-06-30 2015-04-01 キヤノン株式会社 固体撮像装置、及び撮像システム
JP2012028665A (ja) * 2010-07-27 2012-02-09 Renesas Electronics Corp 半導体装置およびトランジスタ制御方法
US8901613B2 (en) * 2011-03-06 2014-12-02 Monolithic 3D Inc. Semiconductor device and structure for heat removal
US8896125B2 (en) 2011-07-05 2014-11-25 Sony Corporation Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US9363451B2 (en) 2011-12-19 2016-06-07 Sony Corporation Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
JP2014022561A (ja) 2012-07-18 2014-02-03 Sony Corp 固体撮像装置、及び、電子機器
US8669135B2 (en) 2012-08-10 2014-03-11 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for fabricating a 3D image sensor structure
JP5708686B2 (ja) * 2013-03-06 2015-04-30 株式会社ニコン 固体撮像素子
JP2014222740A (ja) * 2013-05-14 2014-11-27 株式会社東芝 半導体記憶装置
JP2015032687A (ja) * 2013-08-02 2015-02-16 ソニー株式会社 撮像素子、電子機器、および撮像素子の製造方法
JP2015037121A (ja) * 2013-08-13 2015-02-23 株式会社東芝 固体撮像素子
JP2015153772A (ja) * 2014-02-10 2015-08-24 株式会社東芝 固体撮像装置
JP6274897B2 (ja) * 2014-02-13 2018-02-07 キヤノン株式会社 撮像素子及び撮像素子の駆動方法
KR102450562B1 (ko) 2014-03-13 2022-10-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
JP5784167B2 (ja) * 2014-03-14 2015-09-24 キヤノン株式会社 固体撮像装置の製造方法
CN107431076B (zh) * 2015-03-09 2021-05-14 索尼半导体解决方案公司 成像元件及其制造方法和电子设备
JP2017027982A (ja) 2015-07-16 2017-02-02 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
US10103190B2 (en) * 2016-05-13 2018-10-16 Semiconductor Components Industries, Llc Imaging sensor having floating region of imaging device on one substrate electrically coupled to another floating region formed on a second substrate
US9941200B1 (en) * 2016-09-26 2018-04-10 Stmicroelectronics (Crolles 2) Sas Contact trench between stacked semiconductor substrates
US20180158860A1 (en) * 2016-12-01 2018-06-07 Stmicroelectronics (Crolles 2) Sas Stacked image sensor with interconnects made of doped semiconductor material
JPWO2018109821A1 (ja) * 2016-12-13 2019-10-24 オリンパス株式会社 固体撮像装置および撮像装置
TWI754696B (zh) * 2016-12-14 2022-02-11 日商索尼半導體解決方案公司 固體攝像元件及電子機器
KR102622057B1 (ko) * 2016-12-29 2024-01-05 삼성전자주식회사 이미지 센서
US10075663B2 (en) * 2017-01-20 2018-09-11 Semiconductor Components Industries, Llc Phase detection pixels with high speed readout
JP2018129374A (ja) 2017-02-07 2018-08-16 ソニーセミコンダクタソリューションズ株式会社 半導体装置および半導体装置の製造方法
JP6855287B2 (ja) * 2017-03-08 2021-04-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、および電子機器
JP2019024075A (ja) 2017-07-24 2019-02-14 パナソニックＩｐマネジメント株式会社 撮像装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100245506A1 (en) 2009-03-26 2010-09-30 Xerox Corporation Method And Apparatus For Melt Cessation To Limit Ink Flow And Ink Stick Deformation
JP2019118222A (ja) 2017-12-27 2019-07-18 三菱自動車工業株式会社 電動車両の表示システム

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KR20250067965A (ko) 2025-05-15
US20220271070A1 (en) 2022-08-25
US12136640B2 (en) 2024-11-05
KR102806487B1 (ko) 2025-05-13
EP3993040A1 (en) 2022-05-04
CN113812000A (zh) 2021-12-17
WO2020262643A1 (ja) 2020-12-30
EP3993040A4 (en) 2023-03-29
TWI888390B (zh) 2025-07-01
JP2024133097A (ja) 2024-10-01
TW202504085A (zh) 2025-01-16
JPWO2020262643A1 (https=) 2020-12-30
TW202118030A (zh) 2021-05-01
KR20220022905A (ko) 2022-02-28
US20250098351A1 (en) 2025-03-20
JP7541977B2 (ja) 2024-08-29

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