JPWO2019155520A1 - プローブモジュールおよびプローブ - Google Patents
プローブモジュールおよびプローブ Download PDFInfo
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- JPWO2019155520A1 JPWO2019155520A1 JP2019571137A JP2019571137A JPWO2019155520A1 JP WO2019155520 A1 JPWO2019155520 A1 JP WO2019155520A1 JP 2019571137 A JP2019571137 A JP 2019571137A JP 2019571137 A JP2019571137 A JP 2019571137A JP WO2019155520 A1 JPWO2019155520 A1 JP WO2019155520A1
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- 239000000523 sample Substances 0.000 title claims abstract description 568
- 229910052751 metal Inorganic materials 0.000 claims description 54
- 239000002184 metal Substances 0.000 claims description 54
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 50
- 229910052721 tungsten Inorganic materials 0.000 claims description 50
- 239000010937 tungsten Substances 0.000 claims description 50
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 abstract description 67
- 239000004065 semiconductor Substances 0.000 abstract description 48
- 238000000034 method Methods 0.000 abstract description 46
- 238000011156 evaluation Methods 0.000 abstract description 28
- 230000007423 decrease Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 69
- 235000012431 wafers Nutrition 0.000 description 55
- 239000002245 particle Substances 0.000 description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 30
- 229910052814 silicon oxide Inorganic materials 0.000 description 30
- 239000000463 material Substances 0.000 description 28
- 230000007246 mechanism Effects 0.000 description 24
- 238000005259 measurement Methods 0.000 description 22
- 239000004020 conductor Substances 0.000 description 21
- 238000010521 absorption reaction Methods 0.000 description 20
- 238000007689 inspection Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- 238000001514 detection method Methods 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 230000007547 defect Effects 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 9
- 238000012790 confirmation Methods 0.000 description 8
- 239000012212 insulator Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- DECCZIUVGMLHKQ-UHFFFAOYSA-N rhenium tungsten Chemical compound [W].[Re] DECCZIUVGMLHKQ-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06733—Geometry aspects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06716—Elastic
- G01R1/06727—Cantilever beams
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06755—Material aspects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
- G01R31/2863—Contacting devices, e.g. sockets, burn-in boards or mounting fixtures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
- G01R31/2879—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to electrical aspects, e.g. to voltage or current supply or stimuli or to electrical loads
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/303—Contactless testing of integrated circuits
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Geometry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Leads Or Probes (AREA)
Abstract
Description
Claims (15)
- 複数のプローブと、
前記複数のプローブのホルダと、を有し、
前記複数のプローブは、扇状に配列されていることを特徴とするプローブモジュール。 - 請求項1に記載のプローブモジュールにおいて、
前記プローブを4本有することを特徴とするプローブモジュール。 - 請求項2に記載のプローブモジュールにおいて、
前記4本プローブの先端は、扇状に配列されていることを特徴とするプローブモジュール。 - 請求項1に記載のプローブモジュールにおいて、
前記複数のプローブはタングステンプローブであることを特徴とするプローブモジュール。 - 請求項1に記載のプローブモジュールにおいて、
前記ホルダの試料に面する側とは反対側の面は、導電性を有することを特徴とするプローブモジュール。 - カンチレバーの一方の面に、第1の金属の面を有する突起および前記第1の金属の面に接続されている第1の配線を有し、
前記カンチレバーの他方の面に、導電層を有することを特徴とするプローブ。 - 請求項6に記載のプローブにおいて、
前記突起は前記第1の金属の面と電気的に分離した第2の金属の面と、前記第2の金属の面に接続されている第2の配線と、を有することを特徴とするプローブ。 - 請求項7に記載のプローブにおいて、
前記第1および第2の金属の面は、一つの電極パッドに接触することを特徴とするプローブ。 - 請求項7に記載のプローブにおいて、
前記突起は前記第1および第2の金属の面と電気的に分離した第3の金属の面と、前記第3の金属の面に接続されている第3の配線と、を有することを特徴とするプローブ。 - 請求項6に記載のプローブにおいて、
前記カンチレバーにピエゾ抵抗素子が形成されていることを特徴とするプローブ。 - 請求項6に記載のプローブにおいて、
前記金属はタングステンであることを特徴とするプローブ。 - 板状の複数の金属プローブと、
前記複数の金属プローブを支える本体と、を有し、
前記複数の金属プローブは、略直線状に先端位置が揃えられていることを特徴とするプローブ。 - 請求項12に記載のプローブにおいて、
前記本体の前記複数の金属プローブが配置されている側とは反対側に、導電層を有することを特徴とするプローブ。 - 請求項13に記載のプローブにおいて、
シリコン基板上に形成されている絶縁層と、
前記絶縁層上に前記複数の金属プローブにそれぞれが接続されている配線と、を有し、
前記導電層と前記複数の金属プローブとは、前記シリコン基板に対して前記絶縁層が奥まった形状によって絶縁されていることを特徴とするプローブ。 - 請求項14に記載のプローブにおいて、
前記金属プローブを4つ有することを特徴とするプローブ。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2018/003988 WO2019155520A1 (ja) | 2018-02-06 | 2018-02-06 | プローブモジュールおよびプローブ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2019155520A1 true JPWO2019155520A1 (ja) | 2020-11-19 |
JP7002572B2 JP7002572B2 (ja) | 2022-01-20 |
Family
ID=67548890
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019571137A Active JP7002572B2 (ja) | 2018-02-06 | 2018-02-06 | プローブ |
Country Status (6)
Country | Link |
---|---|
US (1) | US11391756B2 (ja) |
JP (1) | JP7002572B2 (ja) |
KR (1) | KR102401664B1 (ja) |
CN (1) | CN111630648B (ja) |
TW (1) | TWI716808B (ja) |
WO (1) | WO2019155520A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI765312B (zh) * | 2019-11-04 | 2022-05-21 | 旺矽科技股份有限公司 | 邊緣感測器及其點測方法 |
JPWO2022244235A1 (ja) * | 2021-05-21 | 2022-11-24 |
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US11391756B2 (en) | 2022-07-19 |
CN111630648B (zh) | 2023-12-29 |
TWI716808B (zh) | 2021-01-21 |
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