JPWO2018181727A1 - 半導体装置およびその製造方法、ならびに電力変換装置 - Google Patents
半導体装置およびその製造方法、ならびに電力変換装置 Download PDFInfo
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- JPWO2018181727A1 JPWO2018181727A1 JP2019510132A JP2019510132A JPWO2018181727A1 JP WO2018181727 A1 JPWO2018181727 A1 JP WO2018181727A1 JP 2019510132 A JP2019510132 A JP 2019510132A JP 2019510132 A JP2019510132 A JP 2019510132A JP WO2018181727 A1 JPWO2018181727 A1 JP WO2018181727A1
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- solder
- temporary fixing
- semiconductor chip
- solder layer
- semiconductor device
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Abstract
Description
実施の形態1.
まず本実施の形態の第1例の半導体装置としてのパワーモジュールの製造方法について、図1〜図5を用いて説明する。図1を参照して、本実施の形態の第1例のパワーモジュールの製造方法においては、まず基板として、絶縁基板1が準備される。絶縁基板1は、たとえば平面視において矩形状を有するがこれに限られずたとえば円形、楕円形など他の平面形状であってもよい。絶縁基板1は、表面1Aと、その反対側の裏面1Bとを有している。ここでは一例として、絶縁基板1は平面視におけるサイズが100mm×100mmの正方形状であるとする。また絶縁基板1は、図示されないがたとえば裏面1Bから表面1Aに向けて、厚みが0.3mmのアルミニウム層、厚みが0.6mmの窒化アルミニウム層、厚みが0.3mmのアルミニウム層、および厚みがたとえば5μm以上10μmのニッケルめっき層がこの順に積層された構成を有しているものとする。
仮に本実施の形態において、絶縁基板1の表面1A上に複数の第1の仮固定部3を点在するように供給する工程、および半導体チップ5の表面5A上に複数の第2の仮固定部7を点在するように供給する工程が存在しない場合は、第1のはんだ層4と半導体チップ5との間の位置ずれを防ぐ工夫が必要となる。具体的には、たとえば半導体チップ5の搭載位置の外周に壁を設けた位置ずれ防止用の治具を用いて絶縁基板1に対する半導体チップ5の位置を固定しながら1回目のリフロー工程がなされ、絶縁基板1と半導体チップ5とが接合される。その後、ケース10を絶縁基板1に取り付け、第2のはんだ層8を供給し、半導体チップ5上の上面電極6と板状の配線部材9とに2回目のリフロー工程がなされる。これにより、半導体チップ5と配線部材9とが接合される。このように、第1の仮固定部3および第2の仮固定部7を用いない場合には、各部材の接合のために2回のリフロー工程を行なう必要がある。
まず本実施の形態のパワーモジュールの製造方法について、図9〜図11を用いて説明する。本実施の形態におけるパワーモジュールの製造方法は、基本的に図1〜図5の実施の形態1のパワーモジュールの製造方法と同様であるため、同様の工程についてはその説明を省略する。また以下において実施の形態1と同一の構成要素には同一の符号を付しその説明を繰り返さない。
まず本実施の形態のパワーモジュールの製造方法について、図14〜図19を用いて説明する。本実施の形態におけるパワーモジュールの製造方法は、基本的に図1〜図5の実施の形態1のパワーモジュールの製造方法と同様であるため、同様の工程についてはその説明を省略する。また以下において実施の形態1と同一の構成要素には同一の符号を付しその説明を繰り返さない。
実施の形態3においては、第1のはんだ層4の4つの隅部と平面的に重なる位置のみならず、特に第1のはんだ層4の上段においてはさらに多数の第1の仮固定部3が配置される。このように実施の形態1よりも多数の第1の仮固定部3が設けられることにより、実施の形態1のように第1のはんだ層4の4つの隅部と平面的に重なる位置のみに第1の仮固定部3が設けられる場合に比べて、さらに確実に半導体チップ5を絶縁基板1に対する所望の位置に仮固定することができる。このため、リフロー工程の前のハンドリング時および搬送時における各部材間の位置ずれが第1の仮固定部3などにより抑制された状態で、1回のリフロー工程のみにより、より確実に、より高い生産性で、パワーモジュール101を提供することができる。
上記の実施の形態1〜4においては、いずれも製造工程において、第1の仮固定部3および第2の仮固定部7は、銀を含むペースト状の部材としている。あるいは当該第1の仮固定部3および第2の仮固定部7は、そこにはんだ融点よりも低温で揮発する材料、および金属焼結材を含んでもよいものとしている。
図23および図24が示す各工程は、実施の形態1の図2および図3が示す各工程に対応する。図23および図24を参照して、本実施の形態においても実施の形態1と同様に、銀を含むペースト状の部材などの第1の仮固定部3および第2の仮固定部7が用いられる。ただし図23および図24においては、第1のはんだ層4が半導体チップ5に比べ、平面視においてやや小さくなっている。具体的には、たとえば半導体チップ5の平面視におけるサイズが縦15mm、横15mmであれば、第1のはんだ層4の平面視におけるサイズは縦14mm、横14mmである。なお実施の形態1においては基本的には第1のはんだ層4は半導体チップ5と平面視におけるサイズがほぼ同じであることを想定している。この点においてのみ本実施の形態は、実施の形態1と異なっている。
本実施の形態は、上述した実施の形態1〜6にかかる半導体装置を電力変換装置に適用したものである。本発明はある電力変換装置に限定されるものではないが、以下、実施の形態7として、三相のインバータに本発明を適用した場合について説明する。
Claims (16)
- 基板の表面上に複数の第1の仮固定部を、互いに間隔をあけて点在するように供給する工程と、
前記複数の第1の仮固定部の上に接するように、板状に加工された第1のはんだ層を載置する工程と、
前記第1のはんだ層の上に半導体チップを載置する工程と、
前記半導体チップの表面上に複数の第2の仮固定部を、互いに間隔をあけて点在するように供給する工程と、
前記複数の第2の仮固定部の上に接するように、板状に加工された第2のはんだ層を載置する工程と、
前記第2のはんだ層の上に、平板状の配線部材を載置する工程と、
前記基板と前記半導体チップと前記配線部材とを加熱して、前記第1のはんだ層により前記基板と前記半導体チップとを接合し、かつ前記第2のはんだ層により前記半導体チップと前記配線部材とを接合する工程とを備える、半導体装置の製造方法。 - 前記第2のはんだ層を載置する工程の後、前記配線部材を載置する工程の前に、前記第1および第2のはんだ層と前記半導体チップとの積層部を、前記基板側に押圧する工程をさらに備える、請求項1に記載の半導体装置の製造方法。
- 前記第1のはんだ層を載置する工程の後、前記半導体チップを載置する工程の前に、前記第1のはんだ層の表面上に追加で前記複数の第1の仮固定部を、互いに間隔をあけて点在するように供給する工程をさらに備える、請求項1または2に記載の半導体装置の製造方法。
- 前記第1および第2の仮固定部は、リフロー工程においてはんだの融点よりも低い温度により硬化される材質を含む、請求項1〜3のいずれか1項に記載の半導体装置の製造方法。
- 前記第1および第2の仮固定部を供給する工程において供給される前記第1および第2の仮固定部は、室温からはんだの融点までの温度域において粘性を有する接着剤である、請求項1〜4のいずれか1項に記載の半導体装置の製造方法。
- 前記第1および第2の仮固定部は、リフロー工程においてはんだの融点よりも低い温度で揮発する材料を含む、請求項1〜5のいずれか1項に記載の半導体装置の製造方法。
- 前記第1および第2の仮固定部は、リフロー工程においてはんだの融点よりも低い温度で焼結する金属焼結材を含む、請求項6に記載の半導体装置の製造方法。
- 前記第1および第2の仮固定部は、リフロー工程においてはんだの融点よりも低い温度で揮発する材料からなる、請求項1〜3のいずれか1項に記載の半導体装置の製造方法。
- リフロー工程においてはんだの融点よりも低い温度で揮発する前記材料はフラックスである、請求項8に記載の半導体装置の製造方法。
- 基板と、
前記基板の上に配置される半導体チップと、
前記半導体チップの上に配置される平板状の配線部材とを備え、
前記基板と前記半導体チップとは第1のはんだ接合部により接合され、
前記半導体チップと前記配線部材とは第2のはんだ接合部により接合され、
前記第1のはんだ接合部と同一の層に互いに間隔をあけて配置され、前記第1のはんだ接合部と異なる組成を有する複数の第1の領域と、
前記第2のはんだ接合部と同一の層に互いに間隔をあけて配置され、前記第2のはんだ接合部と異なる組成を有する複数の第2の領域とをさらに備える、半導体装置。 - 前記第1および第2の領域は、はんだの融点よりも低い温度により硬化されている、請求項10に記載の半導体装置。
- 前記第1および第2の領域は銀を含んでいる、請求項10に記載の半導体装置。
- 前記第1および第2のはんだ接合部は矩形状を有し、
前記複数の第1の領域は、前記第1のはんだ接合部を平面視したときの4つの隅部に重なるように配置され、
前記複数の第2の領域は、前記第2のはんだ接合部を平面視したときの4つの隅部に重なるように配置される、請求項10〜12のいずれか1項に記載の半導体装置。 - 前記複数の第1の領域は、前記基板と前記半導体チップとの双方と接している、請求項10〜13のいずれか1項に記載の半導体装置。
- 前記複数の第1の領域の一部は前記第1のはんだ接合部および前記基板に接し前記半導体チップと互いに間隔をあけるように配置され、
前記複数の第1の領域の前記一部とは異なる他の一部は前記第1のはんだ接合部および前記半導体チップに接し前記基板と互いに間隔をあけるように配置される、請求項10〜13のいずれか1項に記載の半導体装置。 - 請求項10〜15のいずれか1項に記載の半導体装置を有し、入力される電力を変換して出力する主変換回路と、
前記主変換回路を制御する制御信号を前記主変換回路に出力する制御回路と備えた電力変換装置。
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JP7006706B2 (ja) * | 2018-01-05 | 2022-01-24 | 三菱電機株式会社 | 半導体装置 |
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Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04120741A (ja) | 1990-09-11 | 1992-04-21 | Mitsubishi Electric Corp | 半導体装置用部品の接着方法 |
JP3347279B2 (ja) | 1997-12-19 | 2002-11-20 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP4326105B2 (ja) | 2000-03-17 | 2009-09-02 | シチズン電子株式会社 | フリップチップ実装方法 |
US6197618B1 (en) | 2000-05-04 | 2001-03-06 | General Semiconductor Ireland | Semiconductor device fabrication using adhesives |
US6822331B2 (en) | 2001-06-14 | 2004-11-23 | Delphi Technologies, Inc. | Method of mounting a circuit component and joint structure therefor |
JP3948289B2 (ja) | 2002-01-22 | 2007-07-25 | 松下電器産業株式会社 | 電子部品実装方法 |
JP3666468B2 (ja) | 2002-03-19 | 2005-06-29 | 松下電器産業株式会社 | 電子部品実装装置および電子部品実装方法 |
US7575955B2 (en) * | 2004-01-06 | 2009-08-18 | Ismat Corporation | Method for making electronic packages |
US7491582B2 (en) * | 2004-08-31 | 2009-02-17 | Seiko Epson Corporation | Method for manufacturing semiconductor device and semiconductor device |
JP4692101B2 (ja) * | 2005-06-27 | 2011-06-01 | ソニー株式会社 | 部品接合方法 |
JP4866268B2 (ja) * | 2007-02-28 | 2012-02-01 | 新光電気工業株式会社 | 配線基板の製造方法及び電子部品装置の製造方法 |
US7783141B2 (en) * | 2007-04-04 | 2010-08-24 | Ibiden Co., Ltd. | Substrate for mounting IC chip and device for optical communication |
JP2009206506A (ja) * | 2008-01-31 | 2009-09-10 | Sanyo Electric Co Ltd | 素子搭載用基板およびその製造方法、半導体モジュールおよびこれを搭載した携帯機器 |
US8354688B2 (en) * | 2008-03-25 | 2013-01-15 | Bridge Semiconductor Corporation | Semiconductor chip assembly with bump/base/ledge heat spreader, dual adhesives and cavity in bump |
TWI431727B (zh) * | 2008-04-03 | 2014-03-21 | Kinik Co | 用於承載電子元件之載板結構及其製作方法 |
DE102008055134A1 (de) | 2008-12-23 | 2010-07-01 | Robert Bosch Gmbh | Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils |
JP5115524B2 (ja) * | 2009-07-08 | 2013-01-09 | パナソニック株式会社 | 電子部品ユニット及び補強用接着剤 |
US20110038122A1 (en) * | 2009-08-12 | 2011-02-17 | Rockwell Automation Technologies, Inc. | Phase Change Heat Spreader Bonded to Power Module by Energetic Multilayer Foil |
US20130130439A1 (en) * | 2011-11-21 | 2013-05-23 | Texas Instruments Incorporated | Formed metallic heat sink substrate, circuit system, and fabrication methods |
JP5820991B2 (ja) * | 2012-01-17 | 2015-11-24 | パナソニックIpマネジメント株式会社 | 半導体装置製造方法および半導体装置 |
JP2014043382A (ja) | 2012-08-27 | 2014-03-13 | Toyota Central R&D Labs Inc | 半導体装置とその製造方法 |
US8704448B2 (en) * | 2012-09-06 | 2014-04-22 | Cooledge Lighting Inc. | Wiring boards for array-based electronic devices |
KR102063794B1 (ko) * | 2013-06-19 | 2020-01-08 | 삼성전자 주식회사 | 적층형 반도체 패키지 |
KR102065008B1 (ko) * | 2013-09-27 | 2020-01-10 | 삼성전자주식회사 | 적층형 반도체 패키지 |
US9190375B2 (en) * | 2014-04-09 | 2015-11-17 | GlobalFoundries, Inc. | Solder bump reflow by induction heating |
JP6424610B2 (ja) * | 2014-04-23 | 2018-11-21 | ソニー株式会社 | 半導体装置、および製造方法 |
US20150373845A1 (en) * | 2014-06-24 | 2015-12-24 | Panasonic Intellectual Property Management Co., Ltd. | Electronic component mounting structure and method of manufacturing electronic component mounting structure |
KR102300970B1 (ko) * | 2014-07-02 | 2021-09-09 | 미쓰비시 마테리알 가부시키가이샤 | 접합체의 제조 방법, 다층 접합체의 제조 방법, 파워 모듈용 기판의 제조 방법, 히트 싱크가 부착된 파워 모듈용 기판의 제조 방법 및 적층체의 제조 장치 |
WO2016067414A1 (ja) * | 2014-10-30 | 2016-05-06 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
WO2016174899A1 (ja) * | 2015-04-27 | 2016-11-03 | 富士電機株式会社 | 半導体装置 |
DE102015211599A1 (de) * | 2015-06-23 | 2016-12-29 | Zf Friedrichshafen Ag | Ventil |
US10217690B2 (en) * | 2015-11-30 | 2019-02-26 | Kabushiki Kaisha Toshiba | Semiconductor module that have multiple paths for heat dissipation |
US10327655B2 (en) * | 2016-04-11 | 2019-06-25 | Paradromics, Inc. | Neural-interface probe and methods of packaging the same |
US10541226B2 (en) * | 2016-07-29 | 2020-01-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package structure and method of forming the same |
JP6810915B2 (ja) * | 2017-03-17 | 2021-01-13 | 富士電機株式会社 | はんだ材 |
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