JPWO2007049458A1 - 積層型電子部品、電子装置および積層型電子部品の製造方法 - Google Patents
積層型電子部品、電子装置および積層型電子部品の製造方法 Download PDFInfo
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- JPWO2007049458A1 JPWO2007049458A1 JP2007507605A JP2007507605A JPWO2007049458A1 JP WO2007049458 A1 JPWO2007049458 A1 JP WO2007049458A1 JP 2007507605 A JP2007507605 A JP 2007507605A JP 2007507605 A JP2007507605 A JP 2007507605A JP WO2007049458 A1 JPWO2007049458 A1 JP WO2007049458A1
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Abstract
Description
2 実装基板
3,3a,3b,3c,3d 電子装置
4 セラミック基板
5,14,21 主面
6 樹脂層
7 セラミック層
8,9 柱状導体
10,11 第1の端部
12,13,12a,13a 第2の端部
15,17,19,20,22 導体膜
16,18,39,40,39a,40a ビア導体
23,23a,25,26 電子部品
29 導電ランド
30 半田
31 間隙
34,34a 複合積層体
35 セラミック成形体
36,55 無機材料成形体
46 フランジ状部分
Claims (13)
- セラミック基板と前記セラミック基板の一方主面上に形成される樹脂層とを備え、
前記セラミック基板は、その一方主面上に形成されている表面導体膜および/またはビア導体を備え、
前記樹脂層内には、焼結金属からなる柱状導体が前記樹脂層の厚み方向に軸線方向を向けた状態で配置され、前記柱状導体の軸線方向での第1の端部は、少なくとも前記セラミック基板と前記樹脂層との界面にまで達しかつ前記セラミック基板に備える前記表面導体膜および/または前記ビア導体と一体化され、前記柱状導体の前記第1の端部とは逆の第2の端部は、前記樹脂層の外方に向く主面から突き出ている、
積層型電子部品。 - 前記柱状導体は、その軸線方向での中間部に前記第2の端部より断面積が大きいフランジ状部分を有し、前記フランジ状部分は、前記樹脂層の外方に向く主面に接するように位置している、請求項1に記載の積層型電子部品。
- 前記柱状導体の前記第2の端部は、前記柱状導体の軸線方向での中間部より断面積が大きくされている、請求項1に記載の積層型電子部品。
- 前記柱状導体の前記第2の端部は、前記樹脂層の外方に向く主面から0.01mm以上の突出高さをもって突き出ている、請求項1に記載の積層型電子部品。
- 前記セラミック基板上に実装されかつ前記樹脂層に内蔵される電子部品をさらに備える、請求項1に記載の積層型電子部品。
- 前記セラミック基板の外方に向く主面上に実装される電子部品をさらに備える、請求項1に記載の積層型電子部品。
- 請求項1ないし6のいずれかに記載の積層型電子部品と、
前記積層型電子部品を実装する実装基板と
を備え、
前記積層型電子部品は、前記樹脂層の外方に向く主面を前記実装基板側に向けた状態とされ、
前記柱状導体の前記第2の端部は、導電性接続部材を介して、前記実装基板上に形成された導電接続部に電気的に接続され、
前記積層型電子部品と前記実装基板との間に所定の間隙が設けられている、
電子装置。 - 前記導電性接続部材が半田である、請求項7に記載の電子装置。
- セラミック基板となるべきものであって、一方主面の所定の部分に導電部分が形成された、未焼結状態のセラミック成形体と、前記セラミック成形体の焼結温度では焼結しない無機材料粉末を含み、かつ厚み方向に軸線方向を向けた状態で柱状導体が埋め込まれた、非焼結性の無機材料成形体とを備え、前記未焼結状態のセラミック成形体と前記非焼結性の無機材料成形体とが、前記導電部分に前記柱状導体の端部が接するように積層されている、未焼結状態の複合積層体を作製する工程と、
前記未焼結状態の複合積層体を、前記セラミック成形体が焼結するが、前記無機材料成形体が焼結しない温度で焼成し、それによって、前記セラミック成形体を前記セラミック基板とする工程と、
焼成後の前記複合積層体から前記非焼結性の無機材料成形体を除去し、それによって、前記柱状導体を一方主面から突出させた前記セラミック基板を取り出す工程と、
前記柱状導体の端部が突き出た状態となるように、樹脂層を前記セラミック基板の一方主面上に形成する工程と
を備える、積層型電子部品の製造方法。 - 前記未焼結状態のセラミック成形体の一方主面の所定の部分に形成された導電部分は、前記セラミック基板内に形成されるべきビア導体によって与えられる、請求項9に記載の積層型電子部品の製造方法。
- 前記樹脂層を形成する工程は、トランスファーモールドによって前記樹脂層を成形する工程を備える、請求項9に記載の積層型電子部品の製造方法。
- 前記樹脂層を形成する工程の前に、前記セラミック基板の一方主面上に電子部品を実装する工程をさらに備える、請求項9に記載の積層型電子部品の製造方法。
- 前記セラミック基板の他方主面上に電子部品を実装する工程をさらに備える、請求項9に記載の積層型電子部品の製造方法。
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