JPWO2006109753A1 - ポリイミドフィルムの製造方法およびポリイミドフィルム - Google Patents
ポリイミドフィルムの製造方法およびポリイミドフィルム Download PDFInfo
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- JPWO2006109753A1 JPWO2006109753A1 JP2007512991A JP2007512991A JPWO2006109753A1 JP WO2006109753 A1 JPWO2006109753 A1 JP WO2006109753A1 JP 2007512991 A JP2007512991 A JP 2007512991A JP 2007512991 A JP2007512991 A JP 2007512991A JP WO2006109753 A1 JPWO2006109753 A1 JP WO2006109753A1
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- Prior art keywords
- polyimide film
- film
- self
- coupling agent
- polyimide
- Prior art date
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- 229920001721 polyimide Polymers 0.000 title claims abstract description 158
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000007788 liquid Substances 0.000 claims abstract description 47
- 239000004642 Polyimide Substances 0.000 claims abstract description 44
- 239000002243 precursor Substances 0.000 claims abstract description 42
- 238000010438 heat treatment Methods 0.000 claims abstract description 29
- 239000007822 coupling agent Substances 0.000 claims description 53
- 238000000576 coating method Methods 0.000 claims description 43
- 239000003960 organic solvent Substances 0.000 claims description 41
- 239000011248 coating agent Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 28
- 239000010949 copper Substances 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 238000007747 plating Methods 0.000 claims description 13
- 238000005259 measurement Methods 0.000 claims description 9
- 239000010953 base metal Substances 0.000 claims description 6
- 229910000599 Cr alloy Inorganic materials 0.000 claims description 3
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 abstract description 11
- 239000010408 film Substances 0.000 description 89
- 239000000243 solution Substances 0.000 description 64
- 239000010410 layer Substances 0.000 description 31
- 229910052751 metal Inorganic materials 0.000 description 26
- 239000002184 metal Substances 0.000 description 26
- 239000002904 solvent Substances 0.000 description 24
- -1 nitrogen-containing heterocyclic compound Chemical class 0.000 description 17
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- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 5
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- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 2
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 2
- JYYNAJVZFGKDEQ-UHFFFAOYSA-N 2,4-Dimethylpyridine Chemical compound CC1=CC=NC(C)=C1 JYYNAJVZFGKDEQ-UHFFFAOYSA-N 0.000 description 2
- XWKFPIODWVPXLX-UHFFFAOYSA-N 2,5-dimethylpyridine Chemical compound CC1=CC=C(C)N=C1 XWKFPIODWVPXLX-UHFFFAOYSA-N 0.000 description 2
- NURQLCJSMXZBPC-UHFFFAOYSA-N 3,4-dimethylpyridine Chemical compound CC1=CC=NC=C1C NURQLCJSMXZBPC-UHFFFAOYSA-N 0.000 description 2
- HWWYDZCSSYKIAD-UHFFFAOYSA-N 3,5-dimethylpyridine Chemical compound CC1=CN=CC(C)=C1 HWWYDZCSSYKIAD-UHFFFAOYSA-N 0.000 description 2
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 2
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 2
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- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 2
- 208000028659 discharge Diseases 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 2
- WRKCIHRWQZQBOL-UHFFFAOYSA-N octyl dihydrogen phosphate Chemical compound CCCCCCCCOP(O)(O)=O WRKCIHRWQZQBOL-UHFFFAOYSA-N 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 150000003014 phosphoric acid esters Chemical class 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 239000012756 surface treatment agent Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- GIWQSPITLQVMSG-UHFFFAOYSA-N 1,2-dimethylimidazole Chemical compound CC1=NC=CN1C GIWQSPITLQVMSG-UHFFFAOYSA-N 0.000 description 1
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 1
- MCTWTZJPVLRJOU-UHFFFAOYSA-N 1-methyl-1H-imidazole Chemical compound CN1C=CN=C1 MCTWTZJPVLRJOU-UHFFFAOYSA-N 0.000 description 1
- IEKHISJGRIEHRE-UHFFFAOYSA-N 16-methylheptadecanoic acid;propan-2-ol;titanium Chemical compound [Ti].CC(C)O.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O IEKHISJGRIEHRE-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- ILCOCZBHMDEIAI-UHFFFAOYSA-N 2-(2-octadecoxyethoxy)ethanol Chemical compound CCCCCCCCCCCCCCCCCCOCCOCCO ILCOCZBHMDEIAI-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- YQFWOVSLKJDIGC-UHFFFAOYSA-N 2-[2-[2-(2-dodecoxyethoxy)ethoxy]ethoxy]ethyl phosphono hydrogen phosphate Chemical compound CCCCCCCCCCCCOCCOCCOCCOCCOP(O)(=O)OP(O)(O)=O YQFWOVSLKJDIGC-UHFFFAOYSA-N 0.000 description 1
- PFFRGUUJUJHNDB-UHFFFAOYSA-N 2-[2-[2-[2-(2,2-dimethylpropoxy)ethoxy]ethoxy]ethoxy]ethyl phosphono hydrogen phosphate Chemical compound CC(C)(C)COCCOCCOCCOCCOP(O)(=O)OP(O)(O)=O PFFRGUUJUJHNDB-UHFFFAOYSA-N 0.000 description 1
- HHWADTQVDUQGSB-UHFFFAOYSA-N 2-[bis(2-hydroxyethyl)amino]ethanol;octadecyl dihydrogen phosphate Chemical compound OCCN(CCO)CCO.CCCCCCCCCCCCCCCCCCOP(O)(O)=O HHWADTQVDUQGSB-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- OXYZDRAJMHGSMW-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCCl OXYZDRAJMHGSMW-UHFFFAOYSA-N 0.000 description 1
- UDQLIWBWHVOIIF-UHFFFAOYSA-N 3-phenylbenzene-1,2-diamine Chemical compound NC1=CC=CC(C=2C=CC=CC=2)=C1N UDQLIWBWHVOIIF-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- RWXZXCZBMQPOBF-UHFFFAOYSA-N 5-methyl-1H-benzimidazole Chemical compound CC1=CC=C2N=CNC2=C1 RWXZXCZBMQPOBF-UHFFFAOYSA-N 0.000 description 1
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- 150000001408 amides Chemical class 0.000 description 1
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- 229910052797 bismuth Inorganic materials 0.000 description 1
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- 238000007607 die coating method Methods 0.000 description 1
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- XMQYIPNJVLNWOE-UHFFFAOYSA-N dioctyl hydrogen phosphite Chemical compound CCCCCCCCOP(O)OCCCCCCCC XMQYIPNJVLNWOE-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
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- 239000000395 magnesium oxide Substances 0.000 description 1
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- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
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- QVLDAVMRWCBMAG-UHFFFAOYSA-N n'-phenyl-n-(3-triethoxysilylpropyl)ethane-1,2-diamine Chemical compound CCO[Si](OCC)(OCC)CCCNCCNC1=CC=CC=C1 QVLDAVMRWCBMAG-UHFFFAOYSA-N 0.000 description 1
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- LIBWSLLLJZULCP-UHFFFAOYSA-N n-(3-triethoxysilylpropyl)aniline Chemical compound CCO[Si](OCC)(OCC)CCCNC1=CC=CC=C1 LIBWSLLLJZULCP-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- UHGIMQLJWRAPLT-UHFFFAOYSA-N octadecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCCCCCCCOP(O)(O)=O UHGIMQLJWRAPLT-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- HRYNZNCXYILNQD-UHFFFAOYSA-N phosphono 2-[2-(2-tridecoxyethoxy)ethoxy]ethyl hydrogen phosphate Chemical compound CCCCCCCCCCCCCOCCOCCOCCOP(O)(=O)OP(O)(O)=O HRYNZNCXYILNQD-UHFFFAOYSA-N 0.000 description 1
- UJDCDJDPWCGFTO-UHFFFAOYSA-N phosphono hexanoate Chemical compound CCCCCC(=O)OP(O)(O)=O UJDCDJDPWCGFTO-UHFFFAOYSA-N 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- KRIXEEBVZRZHOS-UHFFFAOYSA-N tetradecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCCCOP(O)(O)=O KRIXEEBVZRZHOS-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
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- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical class [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
この自己支持性フィルムの両面に有機液体を塗布する工程と、
有機液体を塗布した自己支持性フィルムを加熱、イミド化する工程と
を有するポリイミドフィルムの製造方法。
銅メッキ層の厚みが1〜9μmである上記11記載の銅張りポリイミドフィルム。
また、上記の自己支持性フィルムのイミド化率は、特開平9−316199記載のカールフィッシャー水分計を用いる手法で求めることができ、例えば、IR(ATR)で測定し、フィルムとフルキュア品との振動帯ピーク面積の比を利用して、イミド化率を算出することができる。振動帯ピークとしては、イミドカルボニル基の対称伸縮振動帯やベンゼン環骨格伸縮振動帯などを利用できる。
幅が広いフィルムの場合(幅が550〜2000mm程度)、L、C、R(フィルムの左端、中心、右端)から3点サンプリングし、上記と同様にして各測定値を求め、その平均値を求める。
重合槽に所定量のN,N−ジメチルアセトアミドを加え、次いで3,3’,4,4’−ビフェニルテトラカルボン酸二無水物、次いでパラフェニレンジアミンを加え、30℃で10時間重合反応させて、ポリマーの対数粘度(測定温度:30℃、濃度:0.5g/100ml溶媒、溶媒:N,N−ジメチルアセトアミド)が1.60、ポリマー濃度が18質量%であるポリイミド前駆体溶液を得た。このポリイミド前駆体溶液に、ポリイミド前駆体100質量部に対して0.1質量部の割合でモノステアリルリン酸エステルトリエタノールアミン塩および0.5質量部の割合で平均粒径0.08μmのコロイダルシリカを添加し、均一に混合してポリイミド前駆体溶液組成物を得た。このポリイミド前駆体溶液組成物の回転粘度は3000ポイズであった。
参考例1で得られたポリイミド前駆体溶液組成物をTダイ金型のスリットから連続的にキャスティング・乾燥炉の平滑な金属支持体に押出し、支持体上に薄膜を形成した。この薄膜を120〜160℃で10分間加熱後、支持体から剥離して自己支持性フィルムを得た。
溶媒塗布量:11g/m2 カール量:− 6mm、
溶媒塗布量:18g/m2 カール量:− 2mm。
線膨張係数(MD):12.6×10−6cm/cm/℃、
線膨張係数(TD):13.6×10−6cm/cm/℃。
参考例1で得られたポリイミド前駆体溶液組成物をTダイ金型のスリットから連続的にキャスティング・乾燥炉の平滑な金属支持体に押出し、支持体上に薄膜を形成した。この薄膜を120〜160℃で10分間加熱後、支持体から剥離して自己支持性フィルムを得た。
溶媒塗布量:11g/m2 カール量:−16mm、
溶媒塗布量:18g/m2 カール量:−26mm。
線膨張係数(MD):13.2PPM/℃、
線膨張係数(TD):14.0PPM/℃。
参考例1で得られたポリイミド前駆体溶液組成物をTダイ金型のスリットから連続的にキャスティング・乾燥炉の平滑な金属支持体に押出し、支持体上に薄膜を形成した。この薄膜を120〜160℃で10分間加熱後、支持体から剥離して自己支持性フィルムを得た。
自己支持性フィルムのA面、B面上に、シランカップリング剤のN,N−ジメチルアセトアミド溶液を塗布しなかった他は実施例3と同様にしてポリイミドフィルムを製造し、表面粗度を測定した。その結果を表1に示す。
表1中のRms、Ra、Rmaxの単位はnmである。
Claims (12)
- ポリイミド前駆体溶液の自己支持性フィルムを準備する工程と、
この自己支持性フィルムの両面に有機液体を塗布する工程と、
有機液体を塗布した自己支持性フィルムを加熱、イミド化する工程と
を有するポリイミドフィルムの製造方法。 - 自己支持性フィルムの片面にカップリング剤の有機溶媒溶液を塗布し、他面にカップリング剤を含まない有機液体を塗布する請求項1に記載のポリイミドフィルムの製造方法。
- カップリング剤を含まない有機液体の塗布量を制御することにより、カールを制御した請求項2に記載のポリイミドフィルムの製造方法。
- 自己支持性フィルムの両面にカップリング剤の有機溶媒溶液を塗布する請求項1に記載のポリイミドフィルムの製造方法。
- 片面の有機溶媒溶液の塗布量を制御することにより、カールを制御した請求項4に記載のポリイミドフィルムの製造方法。
- 請求項1に記載の方法により製造されるポリイミドフィルム。
- 5μm×5μmの測定範囲において、Rmsが両面とも3.0nm以下であり、Raが両面とも2.0nm以下であり、Rmaxが両面とも60nm以下である請求項6に記載のポリイミドフィルム。
- 請求項3または5に記載の方法により製造されるポリイミドフィルム。
- フィルムの10cm角の正方形のサンプルについて測定したカールが0〜−30mmの範囲内である請求項8に記載のポリイミドフィルム。
- 厚みが10〜38μmである請求項6に記載のポリイミドフィルム。
- 請求項8に記載のポリイミドフィルムの、製造時にカップリング剤の有機溶媒溶液を塗布した面に、スパッタ下地金属層および銅メッキ層を形成してなる銅張りポリイミドフィルム。
- 下地金属層が厚み1〜30nmのNi/Cr合金層および100〜1000nmのスパッタ銅層からなり、
銅メッキ層の厚みが1〜9μmである請求項11に記載の銅張りポリイミドフィルム。
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JP2008255141A (ja) * | 2007-03-31 | 2008-10-23 | Ube Ind Ltd | ポリイミドフィルムの製造方法およびポリイミドフィルム |
TWI441573B (zh) * | 2007-07-27 | 2014-06-11 | Ube Industries | 配線基板之製造程序 |
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-
2006
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- 2006-04-07 CN CN2006800184634A patent/CN101184795B/zh not_active Expired - Fee Related
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- 2006-04-07 US US11/911,081 patent/US8415024B2/en not_active Expired - Fee Related
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US20090297837A1 (en) | 2009-12-03 |
CN101184795B (zh) | 2012-03-28 |
CN101184795A (zh) | 2008-05-21 |
US8415024B2 (en) | 2013-04-09 |
WO2006109753A1 (ja) | 2006-10-19 |
KR20070120553A (ko) | 2007-12-24 |
JP5109657B2 (ja) | 2012-12-26 |
KR100967326B1 (ko) | 2010-07-05 |
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