JPWO2006009160A1 - Ｃｍｐ研磨剤及び基板の研磨方法 - Google Patents

Ｃｍｐ研磨剤及び基板の研磨方法 Download PDF

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Publication number
JPWO2006009160A1
JPWO2006009160A1 JP2006529234A JP2006529234A JPWO2006009160A1 JP WO2006009160 A1 JPWO2006009160 A1 JP WO2006009160A1 JP 2006529234 A JP2006529234 A JP 2006529234A JP 2006529234 A JP2006529234 A JP 2006529234A JP WO2006009160 A1 JPWO2006009160 A1 JP WO2006009160A1
Authority
JP
Japan
Prior art keywords
polishing
water
cmp
abrasive
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006529234A
Other languages
English (en)
Japanese (ja)
Inventor
深沢　正人
正人 深沢
小山　直之
直之 小山
倉田　靖
靖 倉田
芳賀　浩二
浩二 芳賀
利明 阿久津
利明 阿久津
大槻　裕人
裕人 大槻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Resonac Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Showa Denko Materials Co Ltd, Resonac Corp filed Critical Hitachi Chemical Co Ltd
Publication of JPWO2006009160A1 publication Critical patent/JPWO2006009160A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2006529234A 2004-07-23 2005-07-20 Ｃｍｐ研磨剤及び基板の研磨方法 Pending JPWO2006009160A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004216039 2004-07-23
JP2004216039 2004-07-23
PCT/JP2005/013283 WO2006009160A1 (ja) 2004-07-23 2005-07-20 Ｃｍｐ研磨剤及び基板の研磨方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011031168A Division JP5509114B2 (ja) 2004-07-23 2011-02-16 Ｃｍｐ研磨剤及び基板の研磨方法

Publications (1)

Publication Number Publication Date
JPWO2006009160A1 true JPWO2006009160A1 (ja) 2008-05-01

Family

ID=35785268

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2006529234A Pending JPWO2006009160A1 (ja) 2004-07-23 2005-07-20 Ｃｍｐ研磨剤及び基板の研磨方法
JP2011031168A Expired - Lifetime JP5509114B2 (ja) 2004-07-23 2011-02-16 Ｃｍｐ研磨剤及び基板の研磨方法
JP2013042019A Expired - Lifetime JP5655879B2 (ja) 2004-07-23 2013-03-04 Ｃｍｐ研磨剤及び基板の研磨方法

Family Applications After (2)

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JP2011031168A Expired - Lifetime JP5509114B2 (ja) 2004-07-23 2011-02-16 Ｃｍｐ研磨剤及び基板の研磨方法
JP2013042019A Expired - Lifetime JP5655879B2 (ja) 2004-07-23 2013-03-04 Ｃｍｐ研磨剤及び基板の研磨方法

Country Status (7)

Country Link
US (1) US9293344B2 (https=)
EP (1) EP1796152B1 (https=)
JP (3) JPWO2006009160A1 (https=)
KR (1) KR100856171B1 (https=)
CN (3) CN101311205A (https=)
TW (1) TWI287040B (https=)
WO (1) WO2006009160A1 (https=)

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KR101194881B1 (ko) * 2006-01-31 2012-10-25 히다치 가세고교 가부시끼가이샤 절연막 연마용 ｃｍｐ 연마제, 연마 방법, 상기 연마 방법으로 연마된 반도체 전자 부품
MD3809C2 (ro) * 2008-06-26 2009-08-31 Акционерное Общество "Azurit" Procedeu de prelucrare de finisare a plăcilor pentru acoperire din calcar hemogen
TW201038690A (en) * 2008-09-26 2010-11-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
DE112012004431B4 (de) * 2011-10-24 2025-12-31 Fujimi Incorporated Zusammensetzung zu Polierzwecken, Polierverfahren unter Verwendung derselben und Verfahren zur Herstellung eines Substrates
US8703004B2 (en) * 2011-11-14 2014-04-22 Kabushiki Kaisha Toshiba Method for chemical planarization and chemical planarization apparatus
JPWO2013137220A1 (ja) * 2012-03-14 2015-08-03 日立化成株式会社 研磨方法
EP2826827B1 (en) * 2013-07-18 2019-06-12 Basf Se CMP composition comprising abrasive particles containing ceria
JP2016175948A (ja) * 2013-08-09 2016-10-06 コニカミノルタ株式会社 Ｃｍｐ用研磨液
JP5920840B2 (ja) * 2013-09-30 2016-05-18 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
KR102239131B1 (ko) * 2013-09-30 2021-04-12 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 그 제조 방법
CN104356950B (zh) * 2014-10-21 2017-01-18 李金平 一种蓝宝石晶片抛光液
JP6206388B2 (ja) * 2014-12-15 2017-10-04 信越半導体株式会社 シリコンウェーハの研磨方法
CN104987839A (zh) * 2015-06-30 2015-10-21 安徽德诺化工有限公司 Led用蓝宝石衬底研磨液
US11649377B2 (en) * 2017-08-14 2023-05-16 Resonac Corporation Polishing liquid, polishing liquid set and polishing method
KR102846745B1 (ko) 2017-09-29 2025-08-13 가부시끼가이샤 레조낙 연마액, 연마액 세트 및 연마 방법
JP6837958B2 (ja) * 2017-12-28 2021-03-03 花王株式会社 酸化珪素膜用研磨液組成物
US11718767B2 (en) 2018-08-09 2023-08-08 Versum Materials Us, Llc Chemical mechanical planarization composition for polishing oxide materials and method of use thereof
WO2020170331A1 (ja) 2019-02-19 2020-08-27 日立化成株式会社 研磨液及び研磨方法
CN111014695A (zh) * 2019-11-21 2020-04-17 苏州新锐合金工具股份有限公司 硬质合金混合料的制备方法

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Also Published As

Publication number Publication date
KR100856171B1 (ko) 2008-09-03
US9293344B2 (en) 2016-03-22
CN1985361A (zh) 2007-06-20
CN102585765A (zh) 2012-07-18
JP5655879B2 (ja) 2015-01-21
TW200609337A (en) 2006-03-16
EP1796152A1 (en) 2007-06-13
CN102585765B (zh) 2015-01-21
WO2006009160A1 (ja) 2006-01-26
EP1796152B1 (en) 2019-02-27
TWI287040B (en) 2007-09-21
KR20070026843A (ko) 2007-03-08
US20080003925A1 (en) 2008-01-03
EP1796152A4 (en) 2008-12-03
JP2011103498A (ja) 2011-05-26
JP2013149992A (ja) 2013-08-01
CN101311205A (zh) 2008-11-26
JP5509114B2 (ja) 2014-06-04

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