TWI287040B - CMP slurry and polishing method for substrate - Google Patents

CMP slurry and polishing method for substrate Download PDF

Info

Publication number
TWI287040B
TWI287040B TW094124651A TW94124651A TWI287040B TW I287040 B TWI287040 B TW I287040B TW 094124651 A TW094124651 A TW 094124651A TW 94124651 A TW94124651 A TW 94124651A TW I287040 B TWI287040 B TW I287040B
Authority
TW
Taiwan
Prior art keywords
honing
weight
water
cmp
agent
Prior art date
Application number
TW094124651A
Other languages
English (en)
Chinese (zh)
Other versions
TW200609337A (en
Inventor
Masato Fukasawa
Naoyuki Koyama
Yasushi Kurata
Kouji Haga
Toshiaki Akutsu
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW200609337A publication Critical patent/TW200609337A/zh
Application granted granted Critical
Publication of TWI287040B publication Critical patent/TWI287040B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06Planarisation of inorganic insulating materials
    • H10P95/062Planarisation of inorganic insulating materials involving a dielectric removal step
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW094124651A 2004-07-23 2005-07-21 CMP slurry and polishing method for substrate TWI287040B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004216039 2004-07-23

Publications (2)

Publication Number Publication Date
TW200609337A TW200609337A (en) 2006-03-16
TWI287040B true TWI287040B (en) 2007-09-21

Family

ID=35785268

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094124651A TWI287040B (en) 2004-07-23 2005-07-21 CMP slurry and polishing method for substrate

Country Status (7)

Country Link
US (1) US9293344B2 (https=)
EP (1) EP1796152B1 (https=)
JP (3) JPWO2006009160A1 (https=)
KR (1) KR100856171B1 (https=)
CN (3) CN101311205A (https=)
TW (1) TWI287040B (https=)
WO (1) WO2006009160A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101126124B1 (ko) * 2005-05-30 2012-03-30 주식회사 동진쎄미켐 연마 평탄도를 향상시킨 산화 세륨 슬러리 조성물
KR101194881B1 (ko) * 2006-01-31 2012-10-25 히다치 가세고교 가부시끼가이샤 절연막 연마용 cmp 연마제, 연마 방법, 상기 연마 방법으로 연마된 반도체 전자 부품
MD3809C2 (ro) * 2008-06-26 2009-08-31 Акционерное Общество "Azurit" Procedeu de prelucrare de finisare a plăcilor pentru acoperire din calcar hemogen
TW201038690A (en) * 2008-09-26 2010-11-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
DE112012004431B4 (de) * 2011-10-24 2025-12-31 Fujimi Incorporated Zusammensetzung zu Polierzwecken, Polierverfahren unter Verwendung derselben und Verfahren zur Herstellung eines Substrates
US8703004B2 (en) * 2011-11-14 2014-04-22 Kabushiki Kaisha Toshiba Method for chemical planarization and chemical planarization apparatus
JPWO2013137220A1 (ja) * 2012-03-14 2015-08-03 日立化成株式会社 研磨方法
EP2826827B1 (en) * 2013-07-18 2019-06-12 Basf Se CMP composition comprising abrasive particles containing ceria
JP2016175948A (ja) * 2013-08-09 2016-10-06 コニカミノルタ株式会社 Cmp用研磨液
JP5920840B2 (ja) * 2013-09-30 2016-05-18 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
KR102239131B1 (ko) * 2013-09-30 2021-04-12 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 그 제조 방법
CN104356950B (zh) * 2014-10-21 2017-01-18 李金平 一种蓝宝石晶片抛光液
JP6206388B2 (ja) * 2014-12-15 2017-10-04 信越半導体株式会社 シリコンウェーハの研磨方法
CN104987839A (zh) * 2015-06-30 2015-10-21 安徽德诺化工有限公司 Led用蓝宝石衬底研磨液
US11649377B2 (en) * 2017-08-14 2023-05-16 Resonac Corporation Polishing liquid, polishing liquid set and polishing method
KR102846745B1 (ko) 2017-09-29 2025-08-13 가부시끼가이샤 레조낙 연마액, 연마액 세트 및 연마 방법
JP6837958B2 (ja) * 2017-12-28 2021-03-03 花王株式会社 酸化珪素膜用研磨液組成物
US11718767B2 (en) 2018-08-09 2023-08-08 Versum Materials Us, Llc Chemical mechanical planarization composition for polishing oxide materials and method of use thereof
WO2020170331A1 (ja) 2019-02-19 2020-08-27 日立化成株式会社 研磨液及び研磨方法
CN111014695A (zh) * 2019-11-21 2020-04-17 苏州新锐合金工具股份有限公司 硬质合金混合料的制备方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69420378T2 (de) 1993-12-23 1999-12-30 Nitto Denko Corp., Ibaraki Verfahren zur Herstellung einer wässrigen Dispersion eines Acrylpolymeren, Acrylpolymer so hergestellt, und druckempfindlicher Klebstoff, der dieses Polymer enthält
JP3278532B2 (ja) 1994-07-08 2002-04-30 株式会社東芝 半導体装置の製造方法
JPH10106994A (ja) 1997-01-28 1998-04-24 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
JP3915042B2 (ja) 1997-02-18 2007-05-16 三井化学株式会社 研磨材及び研磨方法
KR20050006299A (ko) 1998-12-25 2005-01-15 히다치 가세고교 가부시끼가이샤 Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법
KR100472882B1 (ko) * 1999-01-18 2005-03-07 가부시끼가이샤 도시바 수계 분산체, 이를 이용한 화학 기계 연마용 수계 분산체조성물, 웨이퍼 표면의 연마 방법 및 반도체 장치의 제조방법
KR100447551B1 (ko) * 1999-01-18 2004-09-08 가부시끼가이샤 도시바 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법
JP4406111B2 (ja) * 1999-04-28 2010-01-27 花王株式会社 研磨液組成物
JP3912927B2 (ja) * 1999-05-10 2007-05-09 花王株式会社 研磨液組成物
JP2001007061A (ja) 1999-06-18 2001-01-12 Hitachi Chem Co Ltd Cmp研磨剤及び基板の研磨方法
JP2001007059A (ja) 1999-06-18 2001-01-12 Hitachi Chem Co Ltd Cmp研磨剤及び基板の研磨方法
JP4134458B2 (ja) 1999-06-23 2008-08-20 Jsr株式会社 半導体部品用洗浄剤、半導体部品の洗浄方法
JP4171858B2 (ja) 1999-06-23 2008-10-29 Jsr株式会社 研磨用組成物および研磨方法
JP4247587B2 (ja) 1999-06-23 2009-04-02 Jsr株式会社 半導体部品用洗浄剤、半導体部品の洗浄方法、研磨用組成物、および研磨方法
JP4224659B2 (ja) 1999-06-23 2009-02-18 Jsr株式会社 半導体部品用洗浄剤
US6440856B1 (en) * 1999-09-14 2002-08-27 Jsr Corporation Cleaning agent for semiconductor parts and method for cleaning semiconductor parts
JP4273475B2 (ja) * 1999-09-21 2009-06-03 株式会社フジミインコーポレーテッド 研磨用組成物
JP2001107089A (ja) 1999-10-07 2001-04-17 Jsr Corp 半導体部品用洗浄剤、半導体部品の洗浄方法、研磨用組成物、および研磨方法
US6348076B1 (en) * 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
US6638143B2 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Ion exchange materials for chemical mechanical polishing
JP2001226666A (ja) 2000-02-15 2001-08-21 Hitachi Ltd 研磨砥粒と研磨液及びその研磨方法並びに半導体装置の製造方法
JP2001300285A (ja) 2000-04-18 2001-10-30 Sanyo Chem Ind Ltd 研磨用砥粒分散剤及び研磨用スラリー
TWI281493B (en) 2000-10-06 2007-05-21 Mitsui Mining & Smelting Co Polishing material
CN1290162C (zh) * 2001-02-20 2006-12-13 日立化成工业株式会社 抛光剂及基片的抛光方法
US6632259B2 (en) * 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
JP5017574B2 (ja) 2001-05-25 2012-09-05 エア プロダクツ アンド ケミカルズ インコーポレイテッド 酸化セリウム研磨剤及び基板の製造方法
JP4972829B2 (ja) 2001-06-28 2012-07-11 日立化成工業株式会社 Cmp研磨剤及び基板の研磨方法
JP4076012B2 (ja) 2002-04-10 2008-04-16 株式会社日本触媒 化学機械研磨用水系分散体
JP2003303792A (ja) 2002-04-10 2003-10-24 Nippon Shokubai Co Ltd 化学機械研磨用水系分散体と研磨方法
JP2003313542A (ja) * 2002-04-22 2003-11-06 Jsr Corp 化学機械研磨用水系分散体
JP2003347247A (ja) 2002-05-28 2003-12-05 Hitachi Chem Co Ltd 半導体絶縁膜用cmp研磨剤及び基板の研磨方法
TWI285668B (en) * 2002-07-22 2007-08-21 Seimi Chem Kk Semiconductor abrasive, process for producing the same and method of polishing
JP2004349426A (ja) * 2003-05-21 2004-12-09 Jsr Corp Sti用化学機械研磨方法
US20070218811A1 (en) * 2004-09-27 2007-09-20 Hitachi Chemical Co., Ltd. Cmp polishing slurry and method of polishing substrate
KR100864996B1 (ko) * 2004-09-28 2008-10-23 히다치 가세고교 가부시끼가이샤 Cmp연마제 및 기판의 연마방법

Also Published As

Publication number Publication date
KR100856171B1 (ko) 2008-09-03
US9293344B2 (en) 2016-03-22
CN1985361A (zh) 2007-06-20
CN102585765A (zh) 2012-07-18
JP5655879B2 (ja) 2015-01-21
TW200609337A (en) 2006-03-16
EP1796152A1 (en) 2007-06-13
CN102585765B (zh) 2015-01-21
WO2006009160A1 (ja) 2006-01-26
EP1796152B1 (en) 2019-02-27
JPWO2006009160A1 (ja) 2008-05-01
KR20070026843A (ko) 2007-03-08
US20080003925A1 (en) 2008-01-03
EP1796152A4 (en) 2008-12-03
JP2011103498A (ja) 2011-05-26
JP2013149992A (ja) 2013-08-01
CN101311205A (zh) 2008-11-26
JP5509114B2 (ja) 2014-06-04

Similar Documents

Publication Publication Date Title
TWI287040B (en) CMP slurry and polishing method for substrate
KR100849551B1 (ko) Сmp연마제 및 기판의 연마방법
JP5110058B2 (ja) Cmp研磨剤及び研磨方法
CN101375376B (zh) 绝缘膜研磨用cmp研磨剂、研磨方法、通过该研磨方法研磨的半导体电子部件
JP5176154B2 (ja) Cmp研磨剤及び基板の研磨方法
JP5510575B2 (ja) 研磨液及びこの研磨液を用いた基板の研磨方法
JP2010095650A (ja) 研磨剤組成物及びこの研磨剤組成物を用いた基板の研磨方法
JP2006179678A (ja) 半導体絶縁膜用cmp研磨剤及び基板の研磨方法
CN101511538A (zh) Cmp研磨剂、cmp研磨剂用添加液以及使用了这些的基板的研磨方法
JP2006041033A (ja) Cmp研磨剤及び基板の研磨方法
JP2006041034A (ja) Cmp研磨剤及び基板の研磨方法
JP2006036963A (ja) Cmp研磨剤及び基板の研磨方法
JP2011233748A (ja) 基板の研磨方法

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent