JPS643069B2 - - Google Patents

Info

Publication number
JPS643069B2
JPS643069B2 JP54036079A JP3607979A JPS643069B2 JP S643069 B2 JPS643069 B2 JP S643069B2 JP 54036079 A JP54036079 A JP 54036079A JP 3607979 A JP3607979 A JP 3607979A JP S643069 B2 JPS643069 B2 JP S643069B2
Authority
JP
Japan
Prior art keywords
induction thyristor
electrostatic induction
semiconductor device
device including
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54036079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55128870A (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP3607979A priority Critical patent/JPS55128870A/ja
Priority to DE3011484A priority patent/DE3011484C2/de
Priority to CA000348523A priority patent/CA1148275A/en
Publication of JPS55128870A publication Critical patent/JPS55128870A/ja
Priority to CA000408751A priority patent/CA1161572A/en
Priority to US07/008,059 priority patent/US4816891A/en
Priority to US07/247,832 priority patent/US4975755A/en
Publication of JPS643069B2 publication Critical patent/JPS643069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H10D18/65—Gate-turn-off devices  with turn-off by field effect 
    • H10D18/655—Gate-turn-off devices  with turn-off by field effect  produced by insulated gate structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H10F30/2635—Static induction photothyristors

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
  • Power Conversion In General (AREA)
JP3607979A 1979-03-26 1979-03-26 Electrostatic induction thyristor and semiconductor device Granted JPS55128870A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP3607979A JPS55128870A (en) 1979-03-26 1979-03-26 Electrostatic induction thyristor and semiconductor device
DE3011484A DE3011484C2 (de) 1979-03-26 1980-03-25 Optisch steuerbare Halbleitervorrichtung
CA000348523A CA1148275A (en) 1979-03-26 1980-03-26 Optically controllable static induction thyristor device
CA000408751A CA1161572A (en) 1979-03-26 1982-08-04 Optically controllable static induction thyristor device
US07/008,059 US4816891A (en) 1979-03-26 1987-01-09 Optically controllable static induction thyristor device
US07/247,832 US4975755A (en) 1979-03-26 1988-09-22 Optically controllable static induction thyristor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3607979A JPS55128870A (en) 1979-03-26 1979-03-26 Electrostatic induction thyristor and semiconductor device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP62022903A Division JPS62188271A (ja) 1987-02-03 1987-02-03 静電誘導サイリスタを含む半導体装置
JP62022904A Division JPS62188272A (ja) 1987-02-03 1987-02-03 静電誘導サイリスタを含む半導体装置

Publications (2)

Publication Number Publication Date
JPS55128870A JPS55128870A (en) 1980-10-06
JPS643069B2 true JPS643069B2 (en:Method) 1989-01-19

Family

ID=12459726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3607979A Granted JPS55128870A (en) 1979-03-26 1979-03-26 Electrostatic induction thyristor and semiconductor device

Country Status (4)

Country Link
US (2) US4816891A (en:Method)
JP (1) JPS55128870A (en:Method)
CA (1) CA1148275A (en:Method)
DE (1) DE3011484C2 (en:Method)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55128870A (en) * 1979-03-26 1980-10-06 Semiconductor Res Found Electrostatic induction thyristor and semiconductor device
US4782379A (en) * 1981-11-23 1988-11-01 General Electric Company Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
JPS5895866A (ja) * 1981-12-02 1983-06-07 Hitachi Ltd 光トリガ・スイツチング素子
JPS5940576A (ja) * 1982-08-30 1984-03-06 Junichi Nishizawa フオトサイリスタ
JPS5941877A (ja) * 1982-08-31 1984-03-08 Junichi Nishizawa フオトトランジスタ
JPS60152063A (ja) * 1984-01-20 1985-08-10 Toyo Electric Mfg Co Ltd 静電誘導サイリスタ
JPH0779159B2 (ja) * 1984-03-22 1995-08-23 潤一 西澤 光トリガ・光クエンチ可能なサイリスタ装置
JP2920832B2 (ja) * 1984-08-22 1999-07-19 財団法人 半導体研究振興会 光トリガ・光クエンチ静電誘導サイリスタ
JPS61136270A (ja) * 1984-12-06 1986-06-24 Semiconductor Res Found 双方向光スイツチ
JPS61137365A (ja) * 1984-12-08 1986-06-25 Semiconductor Res Found 光トリガ・光クエンチ静電誘導サイリスタ
JPH0752768B2 (ja) * 1984-12-21 1995-06-05 財団法人半導体研究振興会 光トリガ・光クエンチ・ゲ−ト・タ−ン・オフ・サイリスタ
JPS61198779A (ja) * 1985-02-28 1986-09-03 Res Dev Corp Of Japan 両面ゲ−ト静電誘導サイリスタ及びその製造方法
JPS624368A (ja) * 1985-06-28 1987-01-10 シ−メンス、アクチエンゲゼルシヤフト サイリスタ
JP2659931B2 (ja) * 1985-06-29 1997-09-30 財団法人 半導体研究振興会 光制御電力変換装置
FR2590750B1 (fr) * 1985-11-22 1991-05-10 Telemecanique Electrique Dispositif de commutation de puissance a semi-conducteurs et son utilisation a la realisation d'un relais statique en courant alternatif
CA1252225A (en) * 1985-11-27 1989-04-04 Sel Colak Lateral insulated gate transistors with coupled anode and gate regions
CH670528A5 (en:Method) * 1986-03-20 1989-06-15 Bbc Brown Boveri & Cie
JPS6384066A (ja) * 1986-09-26 1988-04-14 Semiconductor Res Found 集積化光トリガ・光クエンチ静電誘導サイリスタ及びその製造方法
GB2213988B (en) * 1987-12-18 1992-02-05 Matsushita Electric Works Ltd Semiconductor device
FR2646033A1 (fr) * 1989-04-18 1990-10-19 Labo Electronique Physique Circuit de veille et dispositif de transmission de donnees muni d'un tel circuit
JP3321185B2 (ja) * 1990-09-28 2002-09-03 株式会社東芝 高耐圧半導体装置
JP3023858B2 (ja) * 1991-03-29 2000-03-21 矢崎総業株式会社 光静電誘導サイリスタの駆動回路
JP2536703Y2 (ja) * 1993-12-03 1997-05-28 潤一 西澤 フォトサイリスタ
US6154477A (en) * 1997-05-13 2000-11-28 Berkeley Research Associates, Inc. On-board laser-triggered multi-layer semiconductor power switch
WO1999007019A1 (de) * 1997-08-01 1999-02-11 Siemens Aktiengesellschaft Dreipol-hochvolt-schalter
AU2003235925A1 (en) * 2002-05-10 2003-11-11 Hamamatsu Photonics K.K. Rear surface irradiation photodiode array and method for producing the same
US6933489B2 (en) * 2002-05-10 2005-08-23 Hamamatsu Photonics K.K. Back illuminated photodiode array and method of manufacturing the same
US7602157B2 (en) 2005-12-28 2009-10-13 Flyback Energy, Inc. Supply architecture for inductive loads
US8368166B2 (en) * 2007-05-30 2013-02-05 Intersil Americas Inc. Junction barrier Schottky diode
US7750426B2 (en) 2007-05-30 2010-07-06 Intersil Americas, Inc. Junction barrier Schottky diode with dual silicides
CN101919150B (zh) * 2007-09-18 2013-12-18 菲莱贝克能源公司 从局部能源产生具有低谐波畸变的交流功率的电流波形结构
JP2011023527A (ja) * 2009-07-15 2011-02-03 Toshiba Corp 半導体装置
US8860273B2 (en) * 2009-12-28 2014-10-14 Flyback Energy, Inc. External field interaction motor
JP2013516156A (ja) * 2009-12-28 2013-05-09 フライバック エネルギー，インク． 無効電力を管理する制御可能な汎用電源
US8536617B2 (en) * 2011-12-16 2013-09-17 General Electric Company Optically triggered semiconductor device and method for making the same
JP6414159B2 (ja) * 2016-07-29 2018-10-31 トヨタ自動車株式会社 半導体装置およびその製造方法
US20190245070A1 (en) * 2018-02-07 2019-08-08 Ipower Semiconductor Igbt devices with 3d backside structures for field stop and reverse conduction

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356862A (en) * 1964-12-02 1967-12-05 Int Rectifier Corp High speed controlled rectifier
US3355600A (en) * 1965-03-16 1967-11-28 Gen Electric Triggering means for controlled rectifiers
CH462948A (de) * 1967-09-20 1968-09-30 Bbc Brown Boveri & Cie Schaltungsanordnung mit einem Leistungsthyristor, der mit Hilfe von lichtempfindlichen Elementen gesteuert ist
FR2077002A5 (en:Method) * 1970-01-26 1971-10-15 Petrov Jury
DE2018636A1 (de) * 1970-04-18 1971-11-11 Bosch Hausgeraete Gmbh Steuerung für einen Schaltkreis mit einem Halbleiterschalter
US3633046A (en) * 1970-04-28 1972-01-04 Gen Electric Parallel thyristors switching matrices
DE2163495A1 (de) * 1971-12-21 1973-07-05 Gehap Gmbh & Co Kg Opto-gekoppeltes elektronisches relais mit galvanischer trennung von steuerkreis und schaltkreis
US3896477A (en) * 1973-11-07 1975-07-22 Jearld L Hutson Multilayer semiconductor switching devices
AT330303B (de) * 1974-03-25 1976-06-25 Siemens Ag Oesterreich Zundeinrichtung fur eine anzahl von elektrischen ventilen, insbesondere von thyristoren
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS5947549B2 (ja) * 1976-02-09 1984-11-20 三菱電機株式会社 電流制御装置
US4119845A (en) * 1977-03-21 1978-10-10 Cutler-Hammer, Inc. Thermally-sensitive, photo-controlled semiconductor switching systems
JPS542077A (en) * 1977-06-08 1979-01-09 Hitachi Ltd Semiconductor switching element
JPS5940303B2 (ja) * 1977-07-20 1984-09-29 株式会社日立製作所 半導体スイツチング素子
US4170019A (en) * 1977-08-05 1979-10-02 General Electric Company Semiconductor device with variable grid openings for controlling turn-off pattern
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch
JPS5599774A (en) * 1979-01-26 1980-07-30 Semiconductor Res Found Electrostatic induction type thyristor
JPS55128870A (en) * 1979-03-26 1980-10-06 Semiconductor Res Found Electrostatic induction thyristor and semiconductor device
US4295058A (en) * 1979-06-07 1981-10-13 Eaton Corporation Radiant energy activated semiconductor switch

Also Published As

Publication number Publication date
CA1148275A (en) 1983-06-14
DE3011484A1 (de) 1980-10-09
JPS55128870A (en) 1980-10-06
US4816891A (en) 1989-03-28
US4975755A (en) 1990-12-04
DE3011484C2 (de) 1986-09-04

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