JPS55128870A - Electrostatic induction thyristor and semiconductor device - Google Patents

Electrostatic induction thyristor and semiconductor device

Info

Publication number
JPS55128870A
JPS55128870A JP3607979A JP3607979A JPS55128870A JP S55128870 A JPS55128870 A JP S55128870A JP 3607979 A JP3607979 A JP 3607979A JP 3607979 A JP3607979 A JP 3607979A JP S55128870 A JPS55128870 A JP S55128870A
Authority
JP
Japan
Prior art keywords
gate
scr
turned
high voltage
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3607979A
Other languages
English (en)
Other versions
JPS643069B2 (ja
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP3607979A priority Critical patent/JPS55128870A/ja
Priority to DE3011484A priority patent/DE3011484C2/de
Priority to CA000348523A priority patent/CA1148275A/en
Publication of JPS55128870A publication Critical patent/JPS55128870A/ja
Priority to CA000408751A priority patent/CA1161572A/en
Priority to US07/008,059 priority patent/US4816891A/en
Priority to US07/247,832 priority patent/US4975755A/en
Publication of JPS643069B2 publication Critical patent/JPS643069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
    • H01L31/1116—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor of the static induction type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
  • Power Conversion In General (AREA)
JP3607979A 1979-03-26 1979-03-26 Electrostatic induction thyristor and semiconductor device Granted JPS55128870A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP3607979A JPS55128870A (en) 1979-03-26 1979-03-26 Electrostatic induction thyristor and semiconductor device
DE3011484A DE3011484C2 (de) 1979-03-26 1980-03-25 Optisch steuerbare Halbleitervorrichtung
CA000348523A CA1148275A (en) 1979-03-26 1980-03-26 Optically controllable static induction thyristor device
CA000408751A CA1161572A (en) 1979-03-26 1982-08-04 Optically controllable static induction thyristor device
US07/008,059 US4816891A (en) 1979-03-26 1987-01-09 Optically controllable static induction thyristor device
US07/247,832 US4975755A (en) 1979-03-26 1988-09-22 Optically controllable static induction thyristor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3607979A JPS55128870A (en) 1979-03-26 1979-03-26 Electrostatic induction thyristor and semiconductor device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP62022903A Division JPS62188271A (ja) 1987-02-03 1987-02-03 静電誘導サイリスタを含む半導体装置
JP62022904A Division JPS62188272A (ja) 1987-02-03 1987-02-03 静電誘導サイリスタを含む半導体装置

Publications (2)

Publication Number Publication Date
JPS55128870A true JPS55128870A (en) 1980-10-06
JPS643069B2 JPS643069B2 (ja) 1989-01-19

Family

ID=12459726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3607979A Granted JPS55128870A (en) 1979-03-26 1979-03-26 Electrostatic induction thyristor and semiconductor device

Country Status (4)

Country Link
US (2) US4816891A (ja)
JP (1) JPS55128870A (ja)
CA (1) CA1148275A (ja)
DE (1) DE3011484C2 (ja)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5895866A (ja) * 1981-12-02 1983-06-07 Hitachi Ltd 光トリガ・スイツチング素子
JPS60152063A (ja) * 1984-01-20 1985-08-10 Toyo Electric Mfg Co Ltd 静電誘導サイリスタ
JPS6154871A (ja) * 1984-08-22 1986-03-19 Semiconductor Res Found 光トリガ・光クエンチ静電誘導サイリスタ
JPS61136270A (ja) * 1984-12-06 1986-06-24 Semiconductor Res Found 双方向光スイツチ
JPS61137365A (ja) * 1984-12-08 1986-06-25 Semiconductor Res Found 光トリガ・光クエンチ静電誘導サイリスタ
JPS61148874A (ja) * 1984-12-21 1986-07-07 Semiconductor Res Found 光トリガ・光クエンチ・ゲ−ト・タ−ン・オフ・サイリスタ
JPS61198779A (ja) * 1985-02-28 1986-09-03 Res Dev Corp Of Japan 両面ゲ−ト静電誘導サイリスタ及びその製造方法
JPS624368A (ja) * 1985-06-28 1987-01-10 シ−メンス、アクチエンゲゼルシヤフト サイリスタ
JPS627366A (ja) * 1985-06-29 1987-01-14 Semiconductor Res Found 光制御電力変換装置
US5017991A (en) * 1984-03-22 1991-05-21 Jun-Ichi Nishizawa Light quenchable thyristor device
JPH0718457U (ja) * 1993-12-03 1995-03-31 潤一 西澤 フォトサイリスタ

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55128870A (en) * 1979-03-26 1980-10-06 Semiconductor Res Found Electrostatic induction thyristor and semiconductor device
US4782379A (en) * 1981-11-23 1988-11-01 General Electric Company Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
JPS5940576A (ja) * 1982-08-30 1984-03-06 Junichi Nishizawa フオトサイリスタ
JPS5941877A (ja) * 1982-08-31 1984-03-08 Junichi Nishizawa フオトトランジスタ
FR2590750B1 (fr) * 1985-11-22 1991-05-10 Telemecanique Electrique Dispositif de commutation de puissance a semi-conducteurs et son utilisation a la realisation d'un relais statique en courant alternatif
CA1252225A (en) * 1985-11-27 1989-04-04 Sel Colak Lateral insulated gate transistors with coupled anode and gate regions
CH670528A5 (ja) * 1986-03-20 1989-06-15 Bbc Brown Boveri & Cie
JPS6384066A (ja) * 1986-09-26 1988-04-14 Semiconductor Res Found 集積化光トリガ・光クエンチ静電誘導サイリスタ及びその製造方法
GB2213988B (en) * 1987-12-18 1992-02-05 Matsushita Electric Works Ltd Semiconductor device
FR2646033A1 (fr) * 1989-04-18 1990-10-19 Labo Electronique Physique Circuit de veille et dispositif de transmission de donnees muni d'un tel circuit
JP3321185B2 (ja) * 1990-09-28 2002-09-03 株式会社東芝 高耐圧半導体装置
JP3023858B2 (ja) * 1991-03-29 2000-03-21 矢崎総業株式会社 光静電誘導サイリスタの駆動回路
US6154477A (en) * 1997-05-13 2000-11-28 Berkeley Research Associates, Inc. On-board laser-triggered multi-layer semiconductor power switch
WO1999007019A1 (de) * 1997-08-01 1999-02-11 Siemens Aktiengesellschaft Dreipol-hochvolt-schalter
WO2003096427A1 (en) * 2002-05-10 2003-11-20 Hamamatsu Photonics K.K. Rear surface irradiation photodiode array and method for producing the same
US6933489B2 (en) * 2002-05-10 2005-08-23 Hamamatsu Photonics K.K. Back illuminated photodiode array and method of manufacturing the same
US7602157B2 (en) * 2005-12-28 2009-10-13 Flyback Energy, Inc. Supply architecture for inductive loads
US8368166B2 (en) * 2007-05-30 2013-02-05 Intersil Americas Inc. Junction barrier Schottky diode
US7750426B2 (en) 2007-05-30 2010-07-06 Intersil Americas, Inc. Junction barrier Schottky diode with dual silicides
US7957160B2 (en) * 2007-09-18 2011-06-07 Flyback Energy, Inc. Current waveform construction to generate AC power with low harmonic distortion from localized energy sources
JP2011023527A (ja) * 2009-07-15 2011-02-03 Toshiba Corp 半導体装置
US8860273B2 (en) * 2009-12-28 2014-10-14 Flyback Energy, Inc. External field interaction motor
JP2013516156A (ja) * 2009-12-28 2013-05-09 フライバック エネルギー，インク． 無効電力を管理する制御可能な汎用電源
US8536617B2 (en) * 2011-12-16 2013-09-17 General Electric Company Optically triggered semiconductor device and method for making the same
JP6414159B2 (ja) * 2016-07-29 2018-10-31 トヨタ自動車株式会社 半導体装置およびその製造方法
WO2019157222A1 (en) * 2018-02-07 2019-08-15 Ipower Semiconductor Igbt devices with 3d backside structures for field stop and reverse conduction

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5296341A (en) * 1976-02-09 1977-08-12 Mitsubishi Electric Corp Current controller

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356862A (en) * 1964-12-02 1967-12-05 Int Rectifier Corp High speed controlled rectifier
US3355600A (en) * 1965-03-16 1967-11-28 Gen Electric Triggering means for controlled rectifiers
CH462948A (de) * 1967-09-20 1968-09-30 Bbc Brown Boveri & Cie Schaltungsanordnung mit einem Leistungsthyristor, der mit Hilfe von lichtempfindlichen Elementen gesteuert ist
FR2077002A5 (ja) * 1970-01-26 1971-10-15 Petrov Jury
DE2018636A1 (de) * 1970-04-18 1971-11-11 Bosch Hausgeraete Gmbh Steuerung für einen Schaltkreis mit einem Halbleiterschalter
US3633046A (en) * 1970-04-28 1972-01-04 Gen Electric Parallel thyristors switching matrices
DE2163495A1 (de) * 1971-12-21 1973-07-05 Gehap Gmbh & Co Kg Opto-gekoppeltes elektronisches relais mit galvanischer trennung von steuerkreis und schaltkreis
US3896477A (en) * 1973-11-07 1975-07-22 Jearld L Hutson Multilayer semiconductor switching devices
AT330303B (de) * 1974-03-25 1976-06-25 Siemens Ag Oesterreich Zundeinrichtung fur eine anzahl von elektrischen ventilen, insbesondere von thyristoren
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
US4119845A (en) * 1977-03-21 1978-10-10 Cutler-Hammer, Inc. Thermally-sensitive, photo-controlled semiconductor switching systems
JPS542077A (en) * 1977-06-08 1979-01-09 Hitachi Ltd Semiconductor switching element
JPS5940303B2 (ja) * 1977-07-20 1984-09-29 株式会社日立製作所 半導体スイツチング素子
US4170019A (en) * 1977-08-05 1979-10-02 General Electric Company Semiconductor device with variable grid openings for controlling turn-off pattern
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch
JPS5599774A (en) * 1979-01-26 1980-07-30 Semiconductor Res Found Electrostatic induction type thyristor
JPS55128870A (en) * 1979-03-26 1980-10-06 Semiconductor Res Found Electrostatic induction thyristor and semiconductor device
US4295058A (en) * 1979-06-07 1981-10-13 Eaton Corporation Radiant energy activated semiconductor switch

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5296341A (en) * 1976-02-09 1977-08-12 Mitsubishi Electric Corp Current controller

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH026232B2 (ja) * 1981-12-02 1990-02-08 Hitachi Ltd
JPS5895866A (ja) * 1981-12-02 1983-06-07 Hitachi Ltd 光トリガ・スイツチング素子
JPS60152063A (ja) * 1984-01-20 1985-08-10 Toyo Electric Mfg Co Ltd 静電誘導サイリスタ
US5017991A (en) * 1984-03-22 1991-05-21 Jun-Ichi Nishizawa Light quenchable thyristor device
JPS6154871A (ja) * 1984-08-22 1986-03-19 Semiconductor Res Found 光トリガ・光クエンチ静電誘導サイリスタ
JPS61136270A (ja) * 1984-12-06 1986-06-24 Semiconductor Res Found 双方向光スイツチ
JPH0370909B2 (ja) * 1984-12-06 1991-11-11 Handotai Kenkyu Shinkokai
JPS61137365A (ja) * 1984-12-08 1986-06-25 Semiconductor Res Found 光トリガ・光クエンチ静電誘導サイリスタ
JPH0550861B2 (ja) * 1984-12-08 1993-07-30 Handotai Kenkyu Shinkokai
JPS61148874A (ja) * 1984-12-21 1986-07-07 Semiconductor Res Found 光トリガ・光クエンチ・ゲ−ト・タ−ン・オフ・サイリスタ
JPS61198779A (ja) * 1985-02-28 1986-09-03 Res Dev Corp Of Japan 両面ゲ−ト静電誘導サイリスタ及びその製造方法
JPS624368A (ja) * 1985-06-28 1987-01-10 シ−メンス、アクチエンゲゼルシヤフト サイリスタ
US5093705A (en) * 1985-06-28 1992-03-03 Siemens Aktiengesellschaft Thyristor with reduced central zone thickness
JPS627366A (ja) * 1985-06-29 1987-01-14 Semiconductor Res Found 光制御電力変換装置
JPH0718457U (ja) * 1993-12-03 1995-03-31 潤一 西澤 フォトサイリスタ

Also Published As

Publication number Publication date
DE3011484C2 (de) 1986-09-04
CA1148275A (en) 1983-06-14
US4816891A (en) 1989-03-28
DE3011484A1 (de) 1980-10-09
US4975755A (en) 1990-12-04
JPS643069B2 (ja) 1989-01-19

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