JPS54133065A - Semiconductor switch unit - Google Patents

Semiconductor switch unit

Info

Publication number
JPS54133065A
JPS54133065A JP3718378A JP3718378A JPS54133065A JP S54133065 A JPS54133065 A JP S54133065A JP 3718378 A JP3718378 A JP 3718378A JP 3718378 A JP3718378 A JP 3718378A JP S54133065 A JPS54133065 A JP S54133065A
Authority
JP
Japan
Prior art keywords
transformer
commutation
thyristor
scr
giving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3718378A
Other languages
Japanese (ja)
Inventor
Munehiko Mimura
Tatsuo Yamazaki
Ryohei Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3718378A priority Critical patent/JPS54133065A/en
Publication of JPS54133065A publication Critical patent/JPS54133065A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region

Landscapes

  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To enable sure commutation of SCR, by reducing the adverse effect of the inductance component of circuit on the turn-off time of SCR, through the small sized transformer construction. CONSTITUTION:The transformer T2 is made smaller in size by separating it to the transformer T1 giving the back bias voltage to the thyristor CR and the transformer T2 turning on QM giving the base current of a small value to the commutation transistor QM. Thus, no collector current flows to the base current supply winding N21 to reduce the adverse effect which lowers the back bias of the thyristor CR due to the inductance component of the circuit. Accordingly, sure thyristor commutation can be made by the commutation transistor QM.
JP3718378A 1978-03-29 1978-03-29 Semiconductor switch unit Pending JPS54133065A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3718378A JPS54133065A (en) 1978-03-29 1978-03-29 Semiconductor switch unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3718378A JPS54133065A (en) 1978-03-29 1978-03-29 Semiconductor switch unit

Publications (1)

Publication Number Publication Date
JPS54133065A true JPS54133065A (en) 1979-10-16

Family

ID=12490467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3718378A Pending JPS54133065A (en) 1978-03-29 1978-03-29 Semiconductor switch unit

Country Status (1)

Country Link
JP (1) JPS54133065A (en)

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