JPS57203331A - Gate controlling circuit of gate turn-off thyristor - Google Patents
Gate controlling circuit of gate turn-off thyristorInfo
- Publication number
- JPS57203331A JPS57203331A JP56088212A JP8821281A JPS57203331A JP S57203331 A JPS57203331 A JP S57203331A JP 56088212 A JP56088212 A JP 56088212A JP 8821281 A JP8821281 A JP 8821281A JP S57203331 A JPS57203331 A JP S57203331A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- current
- gto1
- turn
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
- H03K17/723—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Thyristor Switches And Gates (AREA)
Abstract
PURPOSE:To reduce power consumption, by connecting a semiconductor switch to a route through which an ON-gate current flows to turn on the switch just for a necessary time and preventing the saturation of a pulse transformer as well as flowing the minimum necessary ON-gate current. CONSTITUTION:A current which turns on a gate turn-off thyristor GTO1 and a current which turns off the GTO1 are supplies to the secondary side of the same pulse transformer 5. A switch circuit consisting of a transistor TR10 and a resistance 11 and a capacitor 12 forming a time constant circuit at the base of the TR10 are connected to a circuit to which the ON current of the GTO1 flows. In addition, a resistance 8 and a diode 6 are connected between the GTO1 and the TR10. Then the TR10 is made to conduct when the ON current flows to the GTO1, and the capacitor 12 is charged. With this charging, the TR10 is turned off. After this, the ON-gate current is flowed from an ON-gate circuit 9 having a large width, and the equal flowing time is secured between the ON and OFF currents to the transformer 5. Thus saturation is prevented for the transformer 5.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56088212A JPS57203331A (en) | 1981-06-10 | 1981-06-10 | Gate controlling circuit of gate turn-off thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56088212A JPS57203331A (en) | 1981-06-10 | 1981-06-10 | Gate controlling circuit of gate turn-off thyristor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57203331A true JPS57203331A (en) | 1982-12-13 |
JPH0225569B2 JPH0225569B2 (en) | 1990-06-04 |
Family
ID=13936591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56088212A Granted JPS57203331A (en) | 1981-06-10 | 1981-06-10 | Gate controlling circuit of gate turn-off thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57203331A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008101825A (en) * | 2006-10-18 | 2008-05-01 | Iseki & Co Ltd | Grain drying device |
-
1981
- 1981-06-10 JP JP56088212A patent/JPS57203331A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008101825A (en) * | 2006-10-18 | 2008-05-01 | Iseki & Co Ltd | Grain drying device |
Also Published As
Publication number | Publication date |
---|---|
JPH0225569B2 (en) | 1990-06-04 |
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