JPS57203331A - Gate controlling circuit of gate turn-off thyristor - Google Patents

Gate controlling circuit of gate turn-off thyristor

Info

Publication number
JPS57203331A
JPS57203331A JP56088212A JP8821281A JPS57203331A JP S57203331 A JPS57203331 A JP S57203331A JP 56088212 A JP56088212 A JP 56088212A JP 8821281 A JP8821281 A JP 8821281A JP S57203331 A JPS57203331 A JP S57203331A
Authority
JP
Japan
Prior art keywords
gate
current
gto1
turn
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56088212A
Other languages
Japanese (ja)
Other versions
JPH0225569B2 (en
Inventor
Masayoshi Sato
Hiroshi Fukui
Masayuki Hirose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56088212A priority Critical patent/JPS57203331A/en
Publication of JPS57203331A publication Critical patent/JPS57203331A/en
Publication of JPH0225569B2 publication Critical patent/JPH0225569B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
    • H03K17/723—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To reduce power consumption, by connecting a semiconductor switch to a route through which an ON-gate current flows to turn on the switch just for a necessary time and preventing the saturation of a pulse transformer as well as flowing the minimum necessary ON-gate current. CONSTITUTION:A current which turns on a gate turn-off thyristor GTO1 and a current which turns off the GTO1 are supplies to the secondary side of the same pulse transformer 5. A switch circuit consisting of a transistor TR10 and a resistance 11 and a capacitor 12 forming a time constant circuit at the base of the TR10 are connected to a circuit to which the ON current of the GTO1 flows. In addition, a resistance 8 and a diode 6 are connected between the GTO1 and the TR10. Then the TR10 is made to conduct when the ON current flows to the GTO1, and the capacitor 12 is charged. With this charging, the TR10 is turned off. After this, the ON-gate current is flowed from an ON-gate circuit 9 having a large width, and the equal flowing time is secured between the ON and OFF currents to the transformer 5. Thus saturation is prevented for the transformer 5.
JP56088212A 1981-06-10 1981-06-10 Gate controlling circuit of gate turn-off thyristor Granted JPS57203331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56088212A JPS57203331A (en) 1981-06-10 1981-06-10 Gate controlling circuit of gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56088212A JPS57203331A (en) 1981-06-10 1981-06-10 Gate controlling circuit of gate turn-off thyristor

Publications (2)

Publication Number Publication Date
JPS57203331A true JPS57203331A (en) 1982-12-13
JPH0225569B2 JPH0225569B2 (en) 1990-06-04

Family

ID=13936591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56088212A Granted JPS57203331A (en) 1981-06-10 1981-06-10 Gate controlling circuit of gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS57203331A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008101825A (en) * 2006-10-18 2008-05-01 Iseki & Co Ltd Grain drying device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008101825A (en) * 2006-10-18 2008-05-01 Iseki & Co Ltd Grain drying device

Also Published As

Publication number Publication date
JPH0225569B2 (en) 1990-06-04

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