JPS57202131A - Gate controlling circuit for gate turn-off thyristor - Google Patents

Gate controlling circuit for gate turn-off thyristor

Info

Publication number
JPS57202131A
JPS57202131A JP56086971A JP8697181A JPS57202131A JP S57202131 A JPS57202131 A JP S57202131A JP 56086971 A JP56086971 A JP 56086971A JP 8697181 A JP8697181 A JP 8697181A JP S57202131 A JPS57202131 A JP S57202131A
Authority
JP
Japan
Prior art keywords
gate
gtos
gate current
current
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56086971A
Other languages
Japanese (ja)
Inventor
Masayoshi Sato
Hiroshi Fukui
Masayuki Hirose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56086971A priority Critical patent/JPS57202131A/en
Publication of JPS57202131A publication Critical patent/JPS57202131A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
    • H03K17/723—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To flow balanced on-gate and off-gate currents to GTOs in parallel connection, by flowing the on-gate current via a resistor and the off-gate current via the secondary winding of a transformer. CONSTITUTION:When GTOs 1 and 2 in parallel connection are turned on, a transistor (TR)4 turns on and an on-gate current is applied to the gate of the GTOs 1 and 2 via resistors 5 and 9. In this case, the resistors 5 and 9 act like a balancer for the on-gate current and the balanced on-gate current flows. When the GTOs 1 and 2 turn off, a TR6 turns on, an induced voltage at the individual secondary side of a pulse transformer 7 is independently applied to the gate of the GTOs 1 and 2. In this case, the inductance included in the winding of the transformer 7 acts like a current balancer to flow the off-gate current with good balancing.
JP56086971A 1981-06-08 1981-06-08 Gate controlling circuit for gate turn-off thyristor Pending JPS57202131A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56086971A JPS57202131A (en) 1981-06-08 1981-06-08 Gate controlling circuit for gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56086971A JPS57202131A (en) 1981-06-08 1981-06-08 Gate controlling circuit for gate turn-off thyristor

Publications (1)

Publication Number Publication Date
JPS57202131A true JPS57202131A (en) 1982-12-10

Family

ID=13901753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56086971A Pending JPS57202131A (en) 1981-06-08 1981-06-08 Gate controlling circuit for gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS57202131A (en)

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