JPS5516558A - Voltage selective switching circuit - Google Patents
Voltage selective switching circuitInfo
- Publication number
- JPS5516558A JPS5516558A JP8925478A JP8925478A JPS5516558A JP S5516558 A JPS5516558 A JP S5516558A JP 8925478 A JP8925478 A JP 8925478A JP 8925478 A JP8925478 A JP 8925478A JP S5516558 A JPS5516558 A JP S5516558A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- collector
- current
- fets
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
Landscapes
- Bipolar Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To increase a peak current while decreasing a pinch-off voltage, by connecting the lst FET to the collector of a bipolar transistor and the 2nd FET to the base. CONSTITUTION:While a voltage between collector Tc and emitter TE of bipolar transistor 1 is low, FETs 2 and 3 are in an open state, a collector current flows, and the transistor is ON. Although a rise in voltage increase the collector current, gate-source voltages of both FETs rise to increase internal resistances of both the FETs and when the voltage reach a certain limit value, the collector current decreases. When the boltages increases more, the voltage reach the pinch-off voltage of either FET and transisitor 1 turns OFF. Since currents flowing through resistances R1 and R2 are limited by FET2 at this time, the peak current can be increased with no need for increasing resistance R1 and the pinch-off current can be lowered.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8925478A JPS5516558A (en) | 1978-07-21 | 1978-07-21 | Voltage selective switching circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8925478A JPS5516558A (en) | 1978-07-21 | 1978-07-21 | Voltage selective switching circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5516558A true JPS5516558A (en) | 1980-02-05 |
Family
ID=13965617
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8925478A Pending JPS5516558A (en) | 1978-07-21 | 1978-07-21 | Voltage selective switching circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5516558A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59227184A (en) * | 1983-06-07 | 1984-12-20 | 日本文化精工株式会社 | Method of filling paste in recess formed on printed board orlike |
JPS617690A (en) * | 1984-06-22 | 1986-01-14 | 日立コンデンサ株式会社 | Method of producing printed circuit board |
-
1978
- 1978-07-21 JP JP8925478A patent/JPS5516558A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59227184A (en) * | 1983-06-07 | 1984-12-20 | 日本文化精工株式会社 | Method of filling paste in recess formed on printed board orlike |
JPS617690A (en) * | 1984-06-22 | 1986-01-14 | 日立コンデンサ株式会社 | Method of producing printed circuit board |
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