JPS56126320A - Electronic circuit - Google Patents

Electronic circuit

Info

Publication number
JPS56126320A
JPS56126320A JP2992680A JP2992680A JPS56126320A JP S56126320 A JPS56126320 A JP S56126320A JP 2992680 A JP2992680 A JP 2992680A JP 2992680 A JP2992680 A JP 2992680A JP S56126320 A JPS56126320 A JP S56126320A
Authority
JP
Japan
Prior art keywords
trt3
collector
sbd
base
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2992680A
Other languages
Japanese (ja)
Other versions
JPS6059771B2 (en
Inventor
Hideaki Isogai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55029926A priority Critical patent/JPS6059771B2/en
Publication of JPS56126320A publication Critical patent/JPS56126320A/en
Publication of JPS6059771B2 publication Critical patent/JPS6059771B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/603—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with coupled emitters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08146—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in bipolar transistor switches

Abstract

PURPOSE:To improve the rise and fall characteristics of output voltage, by giving a nonsaturated operation to a transistor. CONSTITUTION:When the input Vi is set at L with transistor (TR) T2 turned on, the base potential of the TRT3 is set at -0.8V. In this case, the TRT1 is turned off. And a part of the constant current I1 flows in the route of l1-R1-SBD-T2 since the Schottky barrier diode SBD is connected forward from the collector through the base of the TRT3. As a result, the potential at point A lowers down to 0V or less by the current flowing to the resistance R1, and the value of this current is decided by SBD. In such way, the voltage higher than the forward voltage (0.8V) is never applied between the collector and the base of the TRT3. Thus the TRT3 works at the nonsaturated region. Accordingly the fall characteristics can be improved since the collector charge is low. And the output VO changes sharply from H to L when the input Vi is charged from L to H.
JP55029926A 1980-03-10 1980-03-10 electronic circuit Expired JPS6059771B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55029926A JPS6059771B2 (en) 1980-03-10 1980-03-10 electronic circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55029926A JPS6059771B2 (en) 1980-03-10 1980-03-10 electronic circuit

Publications (2)

Publication Number Publication Date
JPS56126320A true JPS56126320A (en) 1981-10-03
JPS6059771B2 JPS6059771B2 (en) 1985-12-26

Family

ID=12289591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55029926A Expired JPS6059771B2 (en) 1980-03-10 1980-03-10 electronic circuit

Country Status (1)

Country Link
JP (1) JPS6059771B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4701638A (en) * 1985-06-24 1987-10-20 Sgs Microelettronica S.P.A. Antisaturation circuit for integrated PNP transistor
US4749954A (en) * 1986-06-13 1988-06-07 Nec Corporation Current switch capable of producing a stable output of a desired level

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4701638A (en) * 1985-06-24 1987-10-20 Sgs Microelettronica S.P.A. Antisaturation circuit for integrated PNP transistor
US4749954A (en) * 1986-06-13 1988-06-07 Nec Corporation Current switch capable of producing a stable output of a desired level

Also Published As

Publication number Publication date
JPS6059771B2 (en) 1985-12-26

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