JPS54131857A - Transistor dc switching device - Google Patents

Transistor dc switching device

Info

Publication number
JPS54131857A
JPS54131857A JP3943278A JP3943278A JPS54131857A JP S54131857 A JPS54131857 A JP S54131857A JP 3943278 A JP3943278 A JP 3943278A JP 3943278 A JP3943278 A JP 3943278A JP S54131857 A JPS54131857 A JP S54131857A
Authority
JP
Japan
Prior art keywords
voltage
collector
absorption
base
vcbo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3943278A
Other languages
Japanese (ja)
Inventor
Sunao Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3943278A priority Critical patent/JPS54131857A/en
Publication of JPS54131857A publication Critical patent/JPS54131857A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors

Landscapes

  • Electronic Switches (AREA)

Abstract

PURPOSE:To increase the absorption of the surge energy and thus to ensure the high- speed breaking via transistor Tr by increasing the high voltage to be applied to Tr up to the collector-base voltage of Tr when the DC load is switched. CONSTITUTION:The surge absorption circuit formed with rectifying element CR, resistance R1 and R2 plus capacitor C is connected to the collector of Tr which breaks the current of DC load L; and remaking prevention circuit 1 is connected to the base of Tr. Then the constant is adjusted for each element of the absorption circuit to increase the voltage to be applied to Tr at the breaking time up to collector-base voltage VCBO. But VCBO is reduced less than collector-emitter voltage VCEO within the switching time of Tr. Accordingly, the absorption of the surge energy is always increased more than that obtained in case the voltage is reduced down within VCEO which is less than 1/2 VCBO, thus securing the high-speed breaking. Circuit 1 supplies the base current of reverse polarity while the voltage to be applied to Tr exceeds VCEO in order to prevent the breakdown of Tr caused by the reconduction.
JP3943278A 1978-04-04 1978-04-04 Transistor dc switching device Pending JPS54131857A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3943278A JPS54131857A (en) 1978-04-04 1978-04-04 Transistor dc switching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3943278A JPS54131857A (en) 1978-04-04 1978-04-04 Transistor dc switching device

Publications (1)

Publication Number Publication Date
JPS54131857A true JPS54131857A (en) 1979-10-13

Family

ID=12552826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3943278A Pending JPS54131857A (en) 1978-04-04 1978-04-04 Transistor dc switching device

Country Status (1)

Country Link
JP (1) JPS54131857A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114436A (en) * 1980-02-13 1981-09-09 Toyoda Autom Loom Works Ltd Power transistor driving circuit
JPS58205333A (en) * 1982-05-05 1983-11-30 シ−メンス・アクチエンゲゼルシヤフト Protecting circuit for switching transistor
JPS60239119A (en) * 1984-05-14 1985-11-28 Mitsubishi Electric Corp Base drive circuit of transistor
JPS60245309A (en) * 1984-05-18 1985-12-05 Mitsubishi Electric Corp Base driving circuit of transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5255464A (en) * 1975-10-31 1977-05-06 Ibm Switching circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5255464A (en) * 1975-10-31 1977-05-06 Ibm Switching circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114436A (en) * 1980-02-13 1981-09-09 Toyoda Autom Loom Works Ltd Power transistor driving circuit
JPS58205333A (en) * 1982-05-05 1983-11-30 シ−メンス・アクチエンゲゼルシヤフト Protecting circuit for switching transistor
JPS60239119A (en) * 1984-05-14 1985-11-28 Mitsubishi Electric Corp Base drive circuit of transistor
JPH0510846B2 (en) * 1984-05-14 1993-02-10 Mitsubishi Electric Corp
JPS60245309A (en) * 1984-05-18 1985-12-05 Mitsubishi Electric Corp Base driving circuit of transistor
JPH0425730B2 (en) * 1984-05-18 1992-05-01 Mitsubishi Electric Corp

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