JPS5623029A - Gate circuit of gate turn-off thyristor - Google Patents

Gate circuit of gate turn-off thyristor

Info

Publication number
JPS5623029A
JPS5623029A JP9926479A JP9926479A JPS5623029A JP S5623029 A JPS5623029 A JP S5623029A JP 9926479 A JP9926479 A JP 9926479A JP 9926479 A JP9926479 A JP 9926479A JP S5623029 A JPS5623029 A JP S5623029A
Authority
JP
Japan
Prior art keywords
gate
capacitor
gto21
turned
gto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9926479A
Other languages
Japanese (ja)
Inventor
Juichi Irie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP9926479A priority Critical patent/JPS5623029A/en
Publication of JPS5623029A publication Critical patent/JPS5623029A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents

Landscapes

  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To reduce the power loss due to gate inverse current derivation, by restricting the rate of rise of voltage fed between the anode and cathode of thyristor immediately after the turn-off of GTO. CONSTITUTION:When the GTO 21 turns on, the electric charge of the capacitor 27 is discharged via the resistor 26, GTO21, capacitor 30, and diode 29, and the capacitor 30 is charged so that the emitter of the transistor 31 is negative. Next, when the base current is given to the transistor 31 and the transistor 31 is turned on at the time to be turned off of GTO21, the negative charge voltage is fed to the gate of GTO21 by the capacitor 30, gate inverse current is fed to the gate of GTO21, which is turned off. With GTO 21 turned off, the capacitor 27 is charged via the load 22 and the diode 23.
JP9926479A 1979-08-02 1979-08-02 Gate circuit of gate turn-off thyristor Pending JPS5623029A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9926479A JPS5623029A (en) 1979-08-02 1979-08-02 Gate circuit of gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9926479A JPS5623029A (en) 1979-08-02 1979-08-02 Gate circuit of gate turn-off thyristor

Publications (1)

Publication Number Publication Date
JPS5623029A true JPS5623029A (en) 1981-03-04

Family

ID=14242836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9926479A Pending JPS5623029A (en) 1979-08-02 1979-08-02 Gate circuit of gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS5623029A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH061632U (en) * 1992-06-11 1994-01-14 昭彦 水谷 Multi-level parking device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH061632U (en) * 1992-06-11 1994-01-14 昭彦 水谷 Multi-level parking device

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