GB987169A - Improvements relating to semi-conductor controlled rectifiers - Google Patents

Improvements relating to semi-conductor controlled rectifiers

Info

Publication number
GB987169A
GB987169A GB54164A GB54164A GB987169A GB 987169 A GB987169 A GB 987169A GB 54164 A GB54164 A GB 54164A GB 54164 A GB54164 A GB 54164A GB 987169 A GB987169 A GB 987169A
Authority
GB
United Kingdom
Prior art keywords
electrode
semi
improvements relating
controlled rectifiers
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB54164A
Inventor
Peter Arthur Turner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1317754D priority Critical patent/FR1317754A/fr
Priority to GB985261A priority patent/GB935710A/en
Priority to DEA39725A priority patent/DE1209207B/en
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to GB54164A priority patent/GB987169A/en
Publication of GB987169A publication Critical patent/GB987169A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Die Bonding (AREA)

Abstract

987,169. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. Jan. 6, 1964, No. 541/64. Addition to 935,710. Heading H1K. In a controlled rectifier having a widelydistributed switching-off electrode 6 as described in the parent Specification, the electrode 6 may be used as a switching-on or trigger electrode by means of a D.C. voltage source connectible through switching means 12 between the electrode 6 and the cathode (emitter) 4 to make the cathode negative with respect to the electrode 6.
GB54164A 1961-03-17 1964-01-06 Improvements relating to semi-conductor controlled rectifiers Expired GB987169A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1317754D FR1317754A (en) 1961-03-17
GB985261A GB935710A (en) 1961-03-17 1961-03-17 Improvements in controlled semiconductor rectifiers
DEA39725A DE1209207B (en) 1961-03-17 1962-03-16 Controllable semiconductor rectifier with an npnp semiconductor body
GB54164A GB987169A (en) 1961-03-17 1964-01-06 Improvements relating to semi-conductor controlled rectifiers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB985261A GB935710A (en) 1961-03-17 1961-03-17 Improvements in controlled semiconductor rectifiers
GB54164A GB987169A (en) 1961-03-17 1964-01-06 Improvements relating to semi-conductor controlled rectifiers

Publications (1)

Publication Number Publication Date
GB987169A true GB987169A (en) 1965-03-24

Family

ID=26236007

Family Applications (2)

Application Number Title Priority Date Filing Date
GB985261A Expired GB935710A (en) 1961-03-17 1961-03-17 Improvements in controlled semiconductor rectifiers
GB54164A Expired GB987169A (en) 1961-03-17 1964-01-06 Improvements relating to semi-conductor controlled rectifiers

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB985261A Expired GB935710A (en) 1961-03-17 1961-03-17 Improvements in controlled semiconductor rectifiers

Country Status (3)

Country Link
DE (1) DE1209207B (en)
FR (1) FR1317754A (en)
GB (2) GB935710A (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1289195B (en) * 1964-06-23 1969-02-13 Itt Ind Gmbh Deutsche Flat transistor with a recessed base zone
DE1297239C2 (en) * 1964-11-11 1975-07-17 Deutsche Itt Industries Gmbh, 7800 Freiburg POWER TRANSISTOR
DE1281036B (en) * 1965-07-31 1968-10-24 Telefunken Patent Transistor and process for its manufacture
US3577046A (en) * 1969-03-21 1971-05-04 Gen Electric Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon
US3579060A (en) * 1969-03-21 1971-05-18 Gen Electric Thyristor with improved current and voltage handling characteristics
US3609476A (en) * 1970-06-26 1971-09-28 Gen Electric Interdigitated structures for gate turnoff thyristors and for transistors
US3964090A (en) * 1971-12-24 1976-06-15 Semikron Gesellschaft Fur Gleichrichterbau Und Elektronid M.B.H. Semiconductor controlled rectifier
US4079409A (en) * 1973-11-27 1978-03-14 Licentia Patent-Verwaltungs G.M.B.H. Thyristor with pressure contacting
JPS5138879A (en) * 1974-09-27 1976-03-31 Hitachi Ltd
DE2902224A1 (en) * 1979-01-20 1980-07-24 Bbc Brown Boveri & Cie CONTACT SYSTEM FOR PERFORMANCE SEMICONDUCTOR COMPONENTS
EP0022359B1 (en) * 1979-07-04 1983-07-13 Westinghouse Brake And Signal Company Limited Semiconductor contact shim, attachment method and semiconductor device including a contact shim
US4460913A (en) * 1981-10-30 1984-07-17 Rca Corporation Fast switching transistor
DE3230760A1 (en) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München SWITCHABLE THYRISTOR
US4584595A (en) * 1985-02-07 1986-04-22 Reliance Electric Company Arrangement of field effect transistors for operation in the switched mode at high frequency

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2989426A (en) * 1957-06-06 1961-06-20 Ibm Method of transistor manufacture
DE1132247B (en) * 1959-01-30 1962-06-28 Siemens Ag Controlled four-layer triode with four semiconductor layers of alternating conductivity type

Also Published As

Publication number Publication date
GB935710A (en) 1963-09-04
DE1209207B (en) 1966-01-20
FR1317754A (en) 1963-05-08

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